公开(公告)号：US08766296B2

公开(公告)日：2014-07-01

申请号：US12576122

申请日：2009-10-08

Applicant: Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

Inventor： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

IPC: H01L33/00

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/60 ,  H01L2224/16225

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Abstract translation: 一种基于氮化镓（GaN）的发光二极管（LED），其中通过LED的氮面（N面）提取光，并且将N面的表面粗糙化成一个或多个六边形锥体。 粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。 通过各向异性蚀刻使N面的表面变粗糙，其可以包括干蚀刻或光增强化学（PEC）蚀刻。

公开(公告)号：US08749019B2

公开(公告)日：2014-06-10

申请号：US13410455

申请日：2012-03-02

Applicant: Tetsuo Fujii ,  Keisuke Gotoh ,  Masaya Tanaka

Inventor： Tetsuo Fujii ,  Keisuke Gotoh ,  Masaya Tanaka

IPC: H01L21/70 ,  H01L21/8238

CPC classification number: H01L21/76898 ,  B81B2207/095 ,  B81C1/00301 ,  G01P15/125 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A region-divided substrate includes: a substrate having a first surface and a second surface opposite to the first surface and having a plurality of partial regions, which are divided by a plurality of trenches, wherein each trench penetrates the substrate from the first surface to the second surface; a conductive layer having an electrical conductivity higher than the substrate and disposed on a sidewall of one of the plurality of partial regions from the first surface to the second surface; and an insulator embedded in each trench.

Abstract translation: 区域划分的基板包括：具有第一表面和与第一表面相对的第二表面并具有由多个沟槽分隔的多个部分区域的基板，其中每个沟槽从第一表面穿透基板至 第二表面 导电层，其导电率高于所述衬底并且设置在所述多个部分区域中的所述第一表面到所述第二表面之一的侧壁上; 以及嵌入每个沟槽中的绝缘体。

公开(公告)号：US08610133B2

公开(公告)日：2013-12-17

申请号：US13274289

申请日：2011-10-14

Applicant: Ken Nakahara ,  Shunsuke Akasaka ,  Koki Sakamoto ,  Tetsuo Fujii ,  Shunsuke Furuse ,  Soichiro Arimura

Inventor： Ken Nakahara ,  Shunsuke Akasaka ,  Koki Sakamoto ,  Tetsuo Fujii ,  Shunsuke Furuse ,  Soichiro Arimura

IPC: H01L21/02

CPC classification number: G02B5/208 ,  G01J1/1626 ,  G01J1/429 ,  G02B5/285

Abstract: Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range λ and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range λ is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.

Abstract translation: 在支撑基板上形成两个光接收元件。 第一光接收元件由p型层，n型层，光吸收半导体层，阳极电极，阴极电极，保护膜等形成。第二光接收元件由p 型层，n型层，透射膜，阳极电极，阴极电极，保护膜等。光吸收半导体层吸收波长λ范围内的光，并且设置得比光接收表面更靠近光接收表面 pn结区域。 透射膜没有光吸收范围，并且比pn结区域更靠近光接收表面。 通过使用来自第一光接收元件的检测信号和来自第二光接收元件的检测信号的计算来测量波长范围λ的光量。

公开(公告)号：US08497557B2

公开(公告)日：2013-07-30

申请号：US12754036

申请日：2010-04-05

Applicant: Masaya Tanaka ,  Tetsuo Fujii ,  Hisanori Yokura

Inventor： Masaya Tanaka ,  Tetsuo Fujii ,  Hisanori Yokura

IPC: H01L29/84

CPC classification number: B81B7/0041 ,  B81C2203/019 ,  H01L23/3121 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and a sealing member. The first semiconductor substrate has a surface and includes a sensing portion on the surface side. The sensing portion has a movable portion. The first semiconductor substrate and the second semiconductor substrate are bonded together to form a stacked substrate. The stacked substrate defines a hermetically sealed space for accommodating the sensing portion between the first and second semiconductor substrates. The stacked substrate further defines a recess extending between the first semiconductor substrate and the second semiconductor substrate to penetrate an interface between the first semiconductor substrate and the second semiconductor substrate. The sealing member is located in the recess.

Abstract translation: 半导体器件包括第一半导体衬底，第二半导体衬底和密封构件。 第一半导体衬底具有表面并且在表面侧包括感测部分。 感测部分具有可移动部分。 将第一半导体衬底和第二半导体衬底接合在一起以形成堆叠衬底。 堆叠的衬底限定用于在第一和第二半导体衬底之间容纳感测部分的气密密封空间。 堆叠的衬底还限定了在第一半导体衬底和第二半导体衬底之间延伸的凹部，以穿透第一半导体衬底和第二半导体衬底之间的界面。 密封件位于凹槽中。

公开(公告)号：US08278731B2

公开(公告)日：2012-10-02

申请号：US12289773

申请日：2008-11-04

Applicant: Masakiyo Sumitomo ,  Makoto Asai ,  Nozomu Akagi ,  Yasuhiro Kitamura ,  Hiroki Nakamura ,  Tetsuo Fujii

Inventor： Masakiyo Sumitomo ,  Makoto Asai ,  Nozomu Akagi ,  Yasuhiro Kitamura ,  Hiroki Nakamura ,  Tetsuo Fujii

IPC: H01L21/762 ,  H01L27/12

CPC classification number: H01L21/823481 ,  H01L21/26533 ,  H01L21/76243 ,  H01L21/76264 ,  H01L21/823487 ,  H01L21/84 ,  H01L27/0251 ,  H01L27/0629 ,  H01L27/1203 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes: a SOI substrate including a support layer, a first insulation film and a SOI layer; a first circuit; a second circuit; and a trench separation element. The SOI substrate further includes a first region and a second region. The first region has the support layer, the first insulation film and the SOI layer, which are stacked in this order, and the second region has only the support layer. The trench separation element penetrates the support layer, the first insulation film and the SOI layer. The trench separation element separates the first region and the second region. The first circuit is disposed in the SOI layer of the first region. The second circuit is disposed in the support layer of the second region.

Abstract translation: 半导体器件包括：SOI衬底，包括支撑层，第一绝缘膜和SOI层; 第一个电路; 第二电路; 和沟槽分离元件。 SOI衬底还包括第一区域和第二区域。 第一区域具有依次层叠的支撑层，第一绝缘膜和SOI层，第二区域仅具有支撑层。 沟槽分离元件穿透支撑层，第一绝缘膜和SOI层。 沟槽分离元件分离第一区域和第二区域。 第一电路设置在第一区域的SOI层中。 第二电路设置在第二区域的支撑层中。

公开(公告)号：US08234920B2

公开(公告)日：2012-08-07

申请号：US12585052

申请日：2009-09-01

Applicant: Hirofumi Higuchi ,  Tetsuo Fujii ,  Masaki Inoue

Inventor： Hirofumi Higuchi ,  Tetsuo Fujii ,  Masaki Inoue

IPC: G01P9/04 ,  G01C19/56

CPC classification number: G01C19/5719

Abstract: An angular velocity sensor includes first and second oscillators and a coupling beam. The coupling beam couples the first and second oscillators together in such a manner that the first and second oscillators vibrate relative to each other in a predetermined direction. The coupling beam includes a first post portion joined to a surface of the first oscillator, a second post portion joined to a surface of the second oscillator, and a spring portion that joins the first post portion to the second post portion. The spring portion is spaced from the first and second oscillators and has elasticity in the predetermined direction.

Abstract translation: 角速度传感器包括第一和第二振荡器和耦合梁。 耦合光束以第一和第二振荡器在预定方向上相对于彼此振动的方式将第一和第二振荡器耦合在一起。 耦合梁包括接合到第一振荡器的表面的第一柱部分，与第二振荡器的表面接合的第二柱部分，以及将第一柱部分连接到第二柱部分的弹簧部分。 弹簧部分与第一和第二振荡器间隔开，并且在预定方向上具有弹性。

公开(公告)号：US08210040B2

公开(公告)日：2012-07-03

申请号：US12722707

申请日：2010-03-12

Applicant: Hirofumi Higuchi ,  Akitoshi Yamanaka ,  Tetsuo Fujii

Inventor： Hirofumi Higuchi ,  Akitoshi Yamanaka ,  Tetsuo Fujii

IPC: G01C19/56 ,  G01P9/04 ,  G01P1/02

CPC classification number: G01C19/5719

Abstract: An oscillating angular speed sensor includes a detector, a driving portion, and a separating portion. When an angular speed is generated while the detector is driven to oscillate by the driving portion, Coriolis force is applied to the detector. Therefore, the angular speed is detected based on a capacitance variation in accordance with a variation of an interval between a movable electrode and a fixed electrode of the detector. The separating portion is distanced from the detector and the driving portion, and is configured to separate a first space accommodating the detector and a second space accommodating the driving portion.

Abstract translation: 振动角速度传感器包括检测器，驱动部分和分离部分。 当检测器被驱动部分驱动振荡时产生角速度时，将科里奥利力施加到检测器。 因此，根据检测器的可动电极和固定电极之间的间隔的变化，基于电容变化来检测角速度。 分离部分远离检测器和驱动部分，并且被配置为分离容纳检测器的第一空间和容纳驱动部分的第二空间。

公开(公告)号：US08148809B2

公开(公告)日：2012-04-03

申请号：US12654707

申请日：2009-12-29

Applicant: Kouji Senda ,  Satoshi Shiraki ,  Yukihiro Maeda ,  Shinichi Hirose ,  Tetsuo Fujii ,  Takashi Nakano

Inventor： Kouji Senda ,  Satoshi Shiraki ,  Yukihiro Maeda ,  Shinichi Hirose ,  Tetsuo Fujii ,  Takashi Nakano

IPC: H01L23/48

CPC classification number: H01L21/84 ,  H01L23/3107 ,  H01L23/4951 ,  H01L23/49551 ,  H01L24/27 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method for manufacturing a semiconductor device includes: preparing a wafer formed of a SOI substrate; forming a circuit portion in a principal surface portion; removing a support substrate of the SOI substrate; fixing an insulation member on a backside of a semiconductor layer so as to be opposite to the circuit portion; dicing the wafer and dividing the wafer into multiple chips; arranging a first conductive member on the insulation member so as to be opposite to a part of the low potential reference circuit, and arranging a second conductive member on the insulation member so as to be opposite to a part of the high potential reference circuit; and coupling the first conductive member with a first part of the low potential reference circuit, and coupling the second conductive member with a second part of the high potential reference circuit.

Abstract translation: 一种制造半导体器件的方法包括：制备由SOI衬底形成的晶片; 在主表面部分形成电路部分; 去除SOI衬底的支撑衬底; 将绝缘构件固定在半导体层的背面以与电路部分相对; 切割晶片并将晶片分成多个芯片; 在所述绝缘构件上设置与所述低电位基准电路的一部分相对的第一导电构件，并且在所述绝缘构件上配置与所述高电位基准电路的一部分相反的第二导电构件; 以及将所述第一导电构件与所述低电位参考电路的第一部分耦合，以及将所述第二导电构件与所述高电位参考电路的第二部分耦合。

公开(公告)号：US08098000B2

公开(公告)日：2012-01-17

申请号：US12230039

申请日：2008-08-21

Applicant: Yasuyuki Okuda ,  Makiko Sugiura ,  Kenji Fukumura ,  Takahiko Yoshida ,  Tetsuo Fujii

Inventor： Yasuyuki Okuda ,  Makiko Sugiura ,  Kenji Fukumura ,  Takahiko Yoshida ,  Tetsuo Fujii

IPC: H01L41/08

CPC classification number: G01S7/521

Abstract: An ultrasonic sensor for detecting an object includes: a piezoelectric element having a piezoelectric body and first and second electrodes for sandwiching the piezoelectric body; an acoustic matching element having a reception surface, which receives an ultrasonic wave reflected by the object; and a circuit electrically coupled with the piezoelectric element via a wire. The piezoelectric element is embedded in the acoustic matching element so that the acoustic matching element covers at least the first electrode, a part of a sidewall of the piezoelectric element and a part of the wire between the circuit and the piezoelectric element, and the sidewall of the piezoelectric element is adjacent to the first electrode.

Abstract translation: 一种用于检测物体的超声波传感器包括：具有压电体的压电元件和用于夹持压电体的第一和第二电极; 具有接收表面的声匹配元件，其接收由所述物体反射的超声波; 以及经由导线与压电元件电耦合的电路。 压电元件被嵌入在声匹配元件中，使得声匹配元件至少覆盖第一电极，压电元件的侧壁的一部分和电路与压电元件之间的线的一部分，以及侧壁 压电元件与第一电极相邻。

公开(公告)号：US08089144B2

公开(公告)日：2012-01-03

申请号：US12654087

申请日：2009-12-10

Applicant: Tetsuo Fujii ,  Akitoshi Yamanaka ,  Hisanori Yokura

Inventor： Tetsuo Fujii ,  Akitoshi Yamanaka ,  Hisanori Yokura

IPC: H01L23/48

CPC classification number: G01P15/125 ,  B81B7/007 ,  B81B2207/097 ,  G01C19/5719 ,  G01C19/5783 ,  G01P15/0802 ,  G01P2015/0814 ,  H01L23/481 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/16 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13009 ,  H01L2224/13011 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/2518 ,  H01L2224/45144 ,  H01L2224/48 ,  H01L2224/48463 ,  H01L2224/80001 ,  H01L2224/81805 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10157 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.

Abstract translation: 半导体器件包括：传感器，包括在传感器的第一侧上的传感器结构和围绕传感器结构的外围元件; 以及盖，其覆盖所述传感器结构并具有结合到所述传感器的第一侧的第二侧。 盖包括在盖的第二面上的第一布线层。 第一布线层跨越周边元件。 传感器还包括传感器侧连接部分，盖子还包括帽侧连接部分。 传感器侧连接部分接合到盖侧连接部分。 传感器侧连接部和盖侧连接部中的至少一方提供共晶合金，使得传感器侧连接部和盖侧连接部彼此接合。