公开(公告)号：US20060257295A1

公开(公告)日：2006-11-16

申请号：US11383642

申请日：2006-05-16

申请人： Ling Chen ,  Vincent Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

发明人： Ling Chen ,  Vincent Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

IPC分类号： B01J8/18

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Embodiments of an apparatus for generating a chemical precursor used in a vapor deposition processing system are provide which include a canister having a sidewall, a top, and a bottom forming an interior volume which is in fluid communication with an inlet port and an outlet port. The canister contains a plurality of baffles that extend from the bottom to an upper portion of the interior volume and form an extended mean flow path between the inlet port and the outlet port. In one embodiment, the baffles are contained on a prefabricated insert positioned on the bottom of the canister. In one example, an inlet tube may extend from the inlet port into the interior region and be positioned substantially parallel to the baffles. An outlet end of the inlet tube may be adapted to direct a gas flow away from the outlet port, such as towards the sidewall or top of the canister.

摘要翻译： 提供了一种用于生成在气相沉积处理系统中使用的化学前体的装置的实施例，其包括具有侧壁，顶部和底部的罐，该罐形成与入口端口和出口端口流体连通的内部容积。 罐包含多个挡板，其从内部容积的底部延伸到上部，并且在入口和出口之间形成延伸的平均流动路径。 在一个实施例中，挡板包含在位于罐底部的预制插入件上。 在一个示例中，入口管可以从入口端口延伸到内部区域中并且基本平行于挡板定位。 入口管的出口端可以适于将气流引导离开出口，例如朝向罐的侧壁或顶部。

公开(公告)号：US20060128132A1

公开(公告)日：2006-06-15

申请号：US11338565

申请日：2006-01-24

申请人： Ashok Sinha ,  Ming Xi ,  Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung

发明人： Ashok Sinha ,  Ming Xi ,  Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

公开(公告)号：US20060019494A1

公开(公告)日：2006-01-26

申请号：US11231386

申请日：2005-09-21

申请人： Wei Cao ,  Hua Chung ,  Vincent Ku ,  Ling Chen

发明人： Wei Cao ,  Hua Chung ,  Vincent Ku ,  Ling Chen

IPC分类号： H01L21/44

CPC分类号： C23C16/4408 ,  C23C16/045 ,  C23C16/34 ,  C23C16/45557 ,  H01L21/28562

摘要： Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process.

公开(公告)号：US20060009034A1

公开(公告)日：2006-01-12

申请号：US11038592

申请日：2005-01-19

申请人： Ken Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Aygerinos Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael Yang ,  Hua Chung ,  Jeong Byun

发明人： Ken Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Aygerinos Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael Yang ,  Hua Chung ,  Jeong Byun

IPC分类号： H01L21/44

CPC分类号： H01L21/28562 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.

摘要翻译： 在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段 以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。 该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。 在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核 层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

公开(公告)号：US20050287807A1

公开(公告)日：2005-12-29

申请号：US11206491

申请日：2005-08-18

申请人： Ken Lai ,  Jeong Byun ,  Frederick Wu ,  Ramanujapuran Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred Mak ,  Michael Yang ,  Ming Xi

发明人： Ken Lai ,  Jeong Byun ,  Frederick Wu ,  Ramanujapuran Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred Mak ,  Michael Yang ,  Ming Xi

IPC分类号： C23C16/14 ,  C23C16/02 ,  C23C16/04 ,  C23C16/08 ,  C23C16/44 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： C23C16/45525 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

摘要翻译： 提供了沉积钨膜的方法。 所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

公开(公告)号：US06916398B2

公开(公告)日：2005-07-12

申请号：US10032284

申请日：2001-12-21

申请人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

发明人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered. In another aspect, a reaction zone defined between the chamber lid and the substrate receiving surface may comprise a small volume. In still another aspect, the passageway may comprise a tapered expanding channel extending from the central portion of the chamber lid. Another embodiment of the chamber comprises a substrate support having a substrate receiving surface. The chamber further comprises a chamber lid having an expanding channel extending from a central portion of the chamber lid and having a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid. One or more gas conduits are disposed around an upper portion of the expanding channel in which the one or more gas conduits are disposed at an angle from a center of the expanding channel. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

摘要翻译： 气体输送组件的一个实施例包括覆盖构件，该覆盖构件在覆盖构件的中心部分处具有扩张通道，并且具有从膨胀通道延伸到覆盖构件的周边部分的底面。 一个或多个气体导管联接到膨胀通道，在该扩张通道中，一个或多个气体导管与扩张通道的中心成一角度定位。 室的一个实施例包括具有基板接收表面的基板支撑件。 该腔室还包括腔室盖，该室盖具有在腔室盖的中心部分处的通道和从通道延伸到腔室盖的周边部分的锥形底面。 室盖的底表面的形状和尺寸基本上覆盖基板接收表面。 一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。 在一个方面，室盖的底表面可以是锥形的。 在另一方面，限定在室盖和基板接收表面之间的反应区域可以包括小体积。 在另一方面，通道可以包括从腔室盖的中心部分延伸的锥形扩张通道。 腔室的另一实施例包括具有基底接收表面的基底支撑件。 腔室还包括腔室盖，其具有从腔室盖的中心部分延伸的膨胀通道，并且具有从膨胀通道延伸到腔室盖的周边部分的锥形底面。 一个或多个气体管道设置在扩张通道的上部周围，其中一个或多个气体管道以与扩张通道的中心成一定角度设置。 扼流圈设置在邻近锥形底面的周边的腔室盖上。

公开(公告)号：US20050106865A1

公开(公告)日：2005-05-19

申请号：US10865042

申请日：2004-06-10

申请人： Hua Chung ,  Nirmalya Maity ,  Jick Yu ,  Roderick Mosely ,  Mei Chang

发明人： Hua Chung ,  Nirmalya Maity ,  Jick Yu ,  Roderick Mosely ,  Mei Chang

IPC分类号： H01L21/44

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/02063 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871

摘要： A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.

摘要翻译： 提供了一种用于沉积氮化钽阻挡层的方法和装置，用于集成处理工具中。 通过原子层沉积来沉积氮化钽。 从电介质层中的特征的底部去除氮化钽以露出沉积的氮化钽之下的导电材料。 任选地，可以在氮化钽沉积之后通过物理气相沉积来沉积钽层。 可选地，氮化钽沉积和钽沉积可以发生在相同的处理室中。

公开(公告)号：US20050059241A1

公开(公告)日：2005-03-17

申请号：US10951354

申请日：2004-09-29

申请人： Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

发明人： Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

IPC分类号： C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

公开(公告)号：US06772072B2

公开(公告)日：2004-08-03

申请号：US10200613

申请日：2002-07-22

申请人： Seshadri Ganguli ,  Vincent W. Ku ,  Hua Chung ,  Ling Chen

发明人： Seshadri Ganguli ,  Vincent W. Ku ,  Hua Chung ,  Ling Chen

IPC分类号： G06F1900

CPC分类号： C23C16/52 ,  C23C16/4481

摘要： A method and apparatus for monitoring the delivery of a solid precursor from a vessel to a process chamber via a process gas produced by flowing a carrier gas into the vessel is provided. The precursor typically changes state from a solid to a gas (vapor) through a sublimation process within the chamber. The apparatus comprises a gas analyzer to generate a first signal indicative of a density of the precursor in the process gas and a controller. The controller receives the first signal and a second signal indicative of a volume flow rate of the process gas or the carrier gas and calculates a mass flow rate and/or a total amount consumed of the precursor based on the first and second signals. The controller may calculate an amount precursor remaining in the vessel based on the total amount consumed and an initial amount. The amount of precursor remaining in the vessel may be used by an operator to efficiently schedule replacement or replenishment of the precursor in an effort to minimize material waste and processing down time.

公开(公告)号：US06551929B1

公开(公告)日：2003-04-22

申请号：US09605593

申请日：2000-06-28

申请人： Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

发明人： Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

IPC分类号： H01L2144

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the substrate to first and second reactive gases followed forming a bulk layer, adjacent to the nucleating layer, using CVD techniques to concurrently exposing the nucleation layer to the first and second gases.

摘要翻译： 在衬底上形成难熔金属层的方法和系统具有分叉沉积工艺，其包括使用ALD技术使衬底成核，以将衬底串行地暴露于第一和第二反应气体，然后使用邻近成核层的本体层，使用 同时将成核层暴露于第一和第二气体的CVD技术。