公开(公告)号：US20180155379A1

公开(公告)日：2018-06-07

申请号：US15831621

申请日：2017-12-05

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/00 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50

CPC classification number: C07F15/0053 ,  C07F15/0046 ,  C23C16/18 ,  C23C16/34 ,  C23C16/405 ,  C23C16/45536 ,  C23C16/45553 ,  C23C16/50

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US09875889B2

公开(公告)日：2018-01-23

申请号：US15000116

申请日：2016-01-19

Applicant: Applied Materials, Inc.

Inventor： David Thompson

IPC: H01L21/02 ,  C23C16/36 ,  C23C16/455

CPC classification number: H01L21/02167 ,  C23C16/36 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

Abstract: Provided are methods for the deposition of films comprising Si(C)N via atomic layer deposition processes. The methods include exposure of a substrate surface to a silicon precursor and a co-reagent comprising a compound selected from the group consisting of N═N═N—R, R2N—NR2, and (R3Si)qNH3-q, wherein q has a value of between 1 and 3, and each R is independently selected from organosilicons, C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics.

公开(公告)号：US20170323775A1

公开(公告)日：2017-11-09

申请号：US15486838

申请日：2017-04-13

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Thomas Knisley ,  Bhaskar Jyoti Bhuyan

IPC: H01L21/02

CPC classification number: H01L21/0214 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228

Abstract: Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an optional plasma exposure are also described.

公开(公告)号：US09721787B2

公开(公告)日：2017-08-01

申请号：US13713578

申请日：2012-12-13

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Jeffrey W. Anthis

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/507 ,  C23C16/511 ,  H01L21/3205

CPC classification number: H01L21/02271 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45553 ,  C23C16/507 ,  C23C16/511 ,  H01L21/32051

Abstract: Provided are methods of depositing tantalum-containing films via atomic layer deposition and/or chemical vapor deposition. The method comprises exposing a substrate surface to flows of a first precursor comprising TaClxR5-x, TaBrxR5-x or TaIxR5-x, wherein R is a non-halide ligand, and a second precursor comprising an aluminum-containing compound, wherein x has a value in the range of 1 to 4. The R group may be C1-C5 alkyl, and specifically methyl. The resulting films comprise tantalum, aluminum and/or carbon. Certain other methods relate to reacting Ta2Cl10 with a coordinating ligand to provide TaCl5 coordinated to the ligand. A substrate surface may be exposed to flows of a first precursor and second precursor, the first precursor comprising the TaCl5 coordinated to a ligand, the second precursor comprising an aluminum-containing compound.

公开(公告)号：US20170213726A1

公开(公告)日：2017-07-27

申请号：US15413956

申请日：2017-01-24

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Jeffrey W. Anthis ,  Feng Q. Liu ,  David Thompson

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/40

CPC classification number: H01L21/02208 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0262

Abstract: Provided are acetylide-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a acetylide-based precursor and a reactant in various combinations.

公开(公告)号：US20170121287A1

公开(公告)日：2017-05-04

申请号：US15407369

申请日：2017-01-17

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson

IPC: C07D213/38 ,  C07F7/28 ,  C07F11/00 ,  C07F7/00 ,  C07F9/00 ,  C07F15/00 ,  C07F1/00 ,  C07F13/00 ,  C07F1/08 ,  C07D207/335 ,  C07C211/13 ,  C07C211/54 ,  C07F5/02 ,  C23C16/18 ,  C23C16/455 ,  C23C16/50 ,  C07F5/06

CPC classification number: C07D213/38 ,  C07C211/13 ,  C07C211/54 ,  C07D207/335 ,  C07D213/36 ,  C07F1/00 ,  C07F1/005 ,  C07F1/08 ,  C07F5/022 ,  C07F5/069 ,  C07F7/003 ,  C07F7/28 ,  C07F9/005 ,  C07F11/005 ,  C07F13/005 ,  C07F15/004 ,  C07F15/0053 ,  C07F15/0066 ,  C07F15/008 ,  C07F15/0093 ,  C23C16/18 ,  C23C16/45553 ,  C23C16/50

Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.

公开(公告)号：US09631278B2

公开(公告)日：2017-04-25

申请号：US14919196

申请日：2015-10-21

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  David Thompson

IPC: C23C16/00 ,  C23C16/56 ,  C23C16/18 ,  C23C16/42

CPC classification number: C23C16/56 ,  C23C16/18 ,  C23C16/42

Abstract: Methods for depositing or forming a metal silicide layer are disclosed. A metal halide layer is deposited, cleaned by a halogen and subjected to a siliciding agent to form the metal silicide.

公开(公告)号：US09530627B2

公开(公告)日：2016-12-27

申请号：US14484423

申请日：2014-09-12

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Xinliang Lu ,  Kyoung-Ho Bu ,  Jing Zhou ,  Seshadri Ganguli ,  David Thompson

IPC: H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32862 ,  C23C16/08 ,  C23C16/4405 ,  H01J37/32522 ,  H01J37/32724

Abstract: Embodiments described herein relate to a thermal chlorine gas cleaning process. In one embodiment, a method for cleaning N-Metal film deposition in a processing chamber includes positioning a dummy substrate on a substrate support. The processing chamber is heated to at least about 50 degrees Celsius. The method further includes flowing chlorine gas into the processing chamber and evacuating chlorine gas from the processing chamber. In another embodiment, a method for cleaning titanium aluminide film deposition in a processing chamber includes heating the processing chamber to a temperature between about 70 about degrees Celsius and about 100 degrees Celsius, wherein the processing chamber and the substrate support include one or more fluid channels configured to heat or cool the processing chamber and the substrate support.

Abstract translation: 本文所述的实施方案涉及热氯气清洗工艺。 在一个实施例中，用于清洁处理室中的N金属膜沉积的方法包括将虚设基板定位在基板支撑件上。 将处理室加热至至少约50摄氏度。 该方法还包括将氯气流入处理室并从处理室排出氯气。 在另一个实施方案中，一种用于清洁处理室中的铝化铝膜沉积的方法包括将处理室加热到约70摄氏度至约100摄氏度之间的温度，其中处理室和衬底支撑体包括一个或多个流体通道 被配置为加热或冷却处理室和基板支撑件。

公开(公告)号：US20160322214A1

公开(公告)日：2016-11-03

申请号：US15142514

申请日：2016-04-29

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mark Saly ,  David Thompson ,  Mihaela Balseanu ,  Li-Qun Xia

IPC: H01L21/02 ,  H01L21/306

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31111

Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.

Abstract translation: 用于形成SiCN，SiCO和SiCON膜的方法包括将衬底表面循环暴露于含硅气体，含碳气体和等离子体。 一些实施方案还包括在至少等离子体暴露之前加入氧化剂。

公开(公告)号：US20160322213A1

公开(公告)日：2016-11-03

申请号：US15142497

申请日：2016-04-29

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Mark Saly ,  Bhaskar Jyoti Bhuyan

IPC: H01L21/02 ,  H01L21/67 ,  C23C16/50 ,  H01L21/311 ,  C23C16/455 ,  C23C16/04

CPC classification number: H05K1/0296 ,  C07F7/00 ,  C23C16/04 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/50 ,  G03G15/50 ,  G03G15/80 ,  G03G21/1652 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/3105 ,  H01L21/31133 ,  H01L21/32 ,  H01L21/67207 ,  H05K1/0269 ,  H05K1/117 ,  H05K3/4015 ,  H05K3/403 ,  H05K2201/0394 ,  H05K2201/09063 ,  H05K2201/09181 ,  H05K2201/10287 ,  H05K2201/10363

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface. Methods include soaking a substrate surface comprising hydroxyl-terminations with a silylamine to form silyl ether-terminations and depositing a film onto a surface other than the silyl ether-terminated surface.

Abstract translation: 相对于第二衬底表面在第一衬底表面上选择性地沉积膜的方法。 方法包括将含有羟基末端的底物表面与甲硅烷胺浸泡以形成甲硅烷基醚终止并将膜沉积在甲硅烷基醚封端的表面以外的表面上。