公开(公告)号：US5017979A

公开(公告)日：1991-05-21

申请号：US344605

申请日：1989-04-28

Applicant: Tetsuo Fujii ,  Minekazu Sakai ,  Akira Kuroyanagi

Inventor： Tetsuo Fujii ,  Minekazu Sakai ,  Akira Kuroyanagi

IPC: H01L21/28 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788

CPC classification number: H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/7883

Abstract: A gate oxide film is formed on a surface of a semiconductor substrate. A tunnel insulating film having a thickness smaller than that of the gate insulating film is formed in a portion thereof corresponding to a tunnel region. A first silicon film having a low impurity concentration is formed on the gate insulating film. A second silicon film having an impurity concentration higher than that of the first silicon film is formed on the first silicon film so as to be connected thereto. A third silicon film is formed on the second silicon film through an insulating film. The second and third silicon films are formed into floating and control gates, respectively, thereby forming a semiconductor memory device.

Abstract translation: 在半导体衬底的表面上形成栅极氧化膜。 在对应于隧道区域的部分中形成厚度小于栅极绝缘膜厚度的隧道绝缘膜。 在栅极绝缘膜上形成杂质浓度低的第一硅膜。 在第一硅膜上形成杂质浓度高于第一硅膜的第二硅膜，以便与第一硅膜连接。 通过绝缘膜在第二硅膜上形成第三硅膜。 第二和第三硅膜分别形成浮动和控制栅极，从而形成半导体存储器件。

公开(公告)号：US20140252396A1

公开(公告)日：2014-09-11

申请号：US14281535

申请日：2014-05-19

Applicant: Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

Inventor： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

IPC: H01L33/22 ,  H01L33/60 ,  H01L33/32

CPC classification number: H01L33/22 ,  H01L33/00 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32 ,  H01L33/50 ,  H01L33/54 ,  H01L33/60 ,  H01L2224/16225

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Abstract translation: 一种基于氮化镓（GaN）的发光二极管（LED），其中通过LED的氮面（N面）提取光，并且将N面的表面粗糙化成一个或多个六边形锥体。 粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。 通过各向异性蚀刻使N面的表面变粗糙，其可以包括干蚀刻或光增强化学（PEC）蚀刻。

公开(公告)号：US08829627B2

公开(公告)日：2014-09-09

申请号：US13479393

申请日：2012-05-24

Applicant: Tetsuo Fujii ,  Keisuke Gotoh ,  Kenichi Ao

Inventor： Tetsuo Fujii ,  Keisuke Gotoh ,  Kenichi Ao

IPC: H01L29/84 ,  G01P1/02 ,  B60C23/04 ,  G01L9/00 ,  G01P15/08 ,  G01L19/00 ,  B81B7/02 ,  G01P15/125

CPC classification number: G01L9/0073 ,  B60C23/0488 ,  B81B7/02 ,  B81B2201/025 ,  B81B2207/015 ,  G01L9/0085 ,  G01L19/0092 ,  G01P1/023 ,  G01P15/08 ,  G01P15/125

Abstract: A dynamic quantity sensor device includes: first and second dynamic quantity sensors having first and second dynamic quantity detecting units; and first and second substrates, which are bonded to each other to provide first and second spaces. The first and second units are air-tightly accommodated in the first and second spaces, respectively. A SOI layer of the first substrate is divided into multiple semiconductor regions by trenches. First and second parts of the semiconductor regions provide the first and second units, respectively. The second part includes: a second movable semiconductor region having a second movable electrode, which is provided by a sacrifice etching of the embedded oxide film; and a second fixed semiconductor region having a second fixed electrode. The second sensor detects the second dynamic quantity by measuring a capacitance between the second movable and fixed electrodes, which is changeable in accordance with the second dynamic quantity.

Abstract translation: 动态量传感器装置包括：具有第一和第二动态量检测单元的第一和第二动态量传感器; 以及彼此结合以提供第一和第二空间的第一和第二基板。 第一和第二单元分别气密地容纳在第一和第二空间中。 第一衬底的SOI层被沟槽分成多个半导体区域。 半导体区域的第一和第二部分分别提供第一和第二单元。 第二部分包括：具有第二可移动电极的第二可移动半导体区域，其通过对嵌入的氧化膜的牺牲蚀刻而提供; 以及具有第二固定电极的第二固定半导体区域。 第二传感器通过测量可根据第二动态量改变的第二可动电极和固定电极之间的电容来检测第二动态量。

公开(公告)号：US08587168B2

公开(公告)日：2013-11-19

申请号：US13045956

申请日：2011-03-11

Applicant: Masao Yamada ,  Satoshi Yoshimura ,  Tetsuo Fujii

Inventor： Masao Yamada ,  Satoshi Yoshimura ,  Tetsuo Fujii

IPC: H02K9/00

CPC classification number: F04B35/04 ,  F04C23/008 ,  F04C29/0085 ,  F04C29/047 ,  F04C2240/808 ,  H01L2924/0002 ,  H05K1/0203 ,  H05K1/185 ,  H05K7/20936 ,  H01L2924/00

Abstract: An electric device includes: a circuit board arranged in cooling medium in a housing and having an electric element and an external coupling electrode, wherein the electric element is sealed in and mounted in a substrate, and the electric element is electrically coupled with the external coupling electrode; an external coupling terminal electrically coupled with the external coupling electrode; and a separation member for separating the external coupling terminal and a connection portion between the external coupling electrode and the external coupling terminal away from the cooling medium.

Abstract translation: 电气装置包括：布置在壳体中的冷却介质中并具有电气元件和外部耦合电极的电路板，其中电气元件被密封并安装在基板中，并且电气元件与外部耦合 电极; 与外部耦合电极电耦合的外部耦合端子; 以及分离构件，用于将外部耦合端子和外部耦合电极与外部耦合端子之间的连接部分远离冷却介质分离。

公开(公告)号：US08578761B2

公开(公告)日：2013-11-12

申请号：US12733694

申请日：2009-03-25

Applicant: Kenji Fukumura ,  Tetsuo Yoshioka ,  Tetsuo Fujii ,  Takaaki Kawai ,  Hirofumi Higuchi ,  Teruo Oda ,  Yasuyuki Okuda

Inventor： Kenji Fukumura ,  Tetsuo Yoshioka ,  Tetsuo Fujii ,  Takaaki Kawai ,  Hirofumi Higuchi ,  Teruo Oda ,  Yasuyuki Okuda

IPC: G01N33/00

CPC classification number: G01N27/226 ,  G01N33/28

Abstract: A concentration sensor device includes a sensor unit, a substrate, and a sedimentation limit unit. The sensor unit detects a concentration of a specific component contained in liquid. The substrate has a face to which the sensor unit is arranged. The sedimentation limit unit is integrally arranged with the sensor unit or arranged at an upstream side of the sensor unit in a flowing direction of the liquid. The sedimentation limit unit is configured to prevent sedimentation of a foreign object on the sensor unit. The sedimentation limit unit includes a piezoelectric element to vibrate when electricity is supplied so as to promote the foreign object to be separated from the sensor unit. The substrate has a recess recessed in a thickness direction of the substrate.

Abstract translation: 浓度传感器装置包括传感器单元，基板和沉降限制单元。 传感器单元检测液体中包含的特定成分的浓度。 基板具有布置传感器单元的面。 沉降限制单元与传感器单元一体地布置或者沿着液体的流动方向布置在传感器单元的上游侧。 沉淀限制单元被配置为防止异物在传感器单元上​​的沉降。 沉降限制单元包括压电元件，当供电时振动，以促进异物与传感器单元分离。 基板具有在基板的厚度方向上凹陷的凹部。

公开(公告)号：US08519493B2

公开(公告)日：2013-08-27

申请号：US12292068

申请日：2008-11-12

Applicant: Tetsuo Fujii

Inventor： Tetsuo Fujii

IPC: G01P15/125

CPC classification number: B81B7/0058 ,  B81B2207/012 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device includes a physical quantity sensor with a movable electrode disposed in a third layer of a first substrate, a fixed electrode in the third layer and a loop layer. The movable electrode and the fixed electrode are insulated by a second layer of the first substrate, and a loop bump disposed between the first substrate and a second substrate and surrounding the movable portion. The loop layer in the third layer is coupled with the second substrate via the loop bump.

Abstract translation: 一种半导体器件包括：物理量传感器，具有设置在第一基板的第三层中的可动电极，第三层中的固定电极和环路层。 可动电极和固定电极由第一基板的第二层和设置在第一基板和第二基板之间并围绕可动部分的环形凸起绝缘。 第三层中的环路层通过环形凸起与第二衬底耦合。

公开(公告)号：US08441122B2

公开(公告)日：2013-05-14

申请号：US12805733

申请日：2010-08-17

Applicant: Daisuke Fukuoka ,  Takanori Teshima ,  Kuniaki Mamitsu ,  Ken Sakamoto ,  Tetsuo Fujii ,  Akira Tai ,  Kazuo Akamatsu ,  Masayoshi Nishihata

Inventor： Daisuke Fukuoka ,  Takanori Teshima ,  Kuniaki Mamitsu ,  Ken Sakamoto ,  Tetsuo Fujii ,  Akira Tai ,  Kazuo Akamatsu ,  Masayoshi Nishihata

IPC: H01L23/34

CPC classification number: H01L23/3192 ,  H01L23/4334 ,  H01L23/492 ,  H01L24/01 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/16 ,  H01L2224/48491 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/3512 ,  H01L2924/00

Abstract: A semiconductor device includes a first protection film for covering a first metal wiring. A second protection film is disposed on the first protection film, which is covered with a solder layer. Even if a crack is generated in the second protection film before the solder layer is formed on the second protection film, the crack is restricted from proceeding into the first protection film.

Abstract translation: 半导体器件包括用于覆盖第一金属布线的第一保护膜。 第一保护膜设置在第一保护膜上，该第一保护膜被焊料层覆盖。 即使在第二保护膜上形成焊料层之前，在第二保护膜中产生裂纹，限制裂纹进入第一保护膜。

公开(公告)号：US08359923B2

公开(公告)日：2013-01-29

申请号：US12926970

申请日：2010-12-21

Applicant: Tameharu Ohta ,  Tetsuo Fujii ,  Masanobu Azukawa ,  Takeshi Ito ,  Itaru Ishii

Inventor： Tameharu Ohta ,  Tetsuo Fujii ,  Masanobu Azukawa ,  Takeshi Ito ,  Itaru Ishii

IPC: G01P15/125

CPC classification number: G01C19/56 ,  B81B7/0058 ,  B81B2201/0235 ,  B81B2201/0285 ,  G01D18/00 ,  G01P15/08 ,  H01L2224/48247 ,  H05K13/00 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/49826

Abstract: A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.

Abstract translation: 物理量传感器包括传感器部分，壳体和隔振器。 壳体包括具有支撑表面的支撑部分，支撑表面位于传感器部分的端表面上。 隔振器位于传感器部分的端面和壳体的支撑表面之间，以将传感器部分接合到壳体。 隔振器减小传感器部分和壳体之间的相对振动。

公开(公告)号：US08264051B2

公开(公告)日：2012-09-11

申请号：US13036319

申请日：2011-02-28

Applicant: Tetsuo Fujii ,  Kazuhiko Sugiura

Inventor： Tetsuo Fujii ,  Kazuhiko Sugiura

IPC: H01L29/84

CPC classification number: B81B7/007 ,  B81B2207/07 ,  B81B2207/097 ,  B81C2203/0118 ,  G01P15/0802 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/16145 ,  H01L2924/00014

Abstract: A semiconductor device includes: a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element. The cap element has a wiring pattern portion facing the sensor element. The wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery. The sensor element does not have a complicated multi-layered structure, so that the sensor element is simplified. Further, the dimensions of the device are reduced.

Abstract translation: 半导体器件包括：传感器元件，其具有表面的板形，并且包括设置在传感器元件的表面部分中的传感器结构; 以及结合到传感器元件的表面的板状盖元件。 盖元件具有面向传感器元件的布线图案部分。 布线图形部分连接传感器元件的表面的外周和传感器结构，使得传感器结构经由外周与外部元件电耦合。 传感器元件不具有复杂的多层结构，因此传感器元件被简化。 此外，装置的尺寸减小。

公开(公告)号：US08106471B2

公开(公告)日：2012-01-31

申请号：US12588421

申请日：2009-10-15

Applicant: Hisanori Yokura ,  Tetsuo Fujii

Inventor： Hisanori Yokura ,  Tetsuo Fujii

IPC: H01L29/788

CPC classification number: G01P15/125 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/082 ,  G01P2015/0831

Abstract: A semiconductor dynamic quantity sensor includes a sensor part and a cap connected to the sensor part. Dynamic quantity is detected based on a capacitance of a capacitor defined between a movable electrode and a fixed electrode of the sensor part. A float portion of the sensor part is separated from a support board of the sensor part to define a predetermined interval. At least one of the cap and the support board has a displacing portion displacing the float portion in a direction perpendicular to the support board so as to change the predetermined interval. The movable electrode has a displacement in accordance with the displaced float portion.

Abstract translation: 半导体动态量传感器包括与传感器部连接的传感器部和盖。 基于在传感器部件的可动电极和固定电极之间限定的电容器的电容来检测动态量。 传感器部分的浮动部分与传感器部件的支撑板分离以限定预定间隔。 盖和支撑板中的至少一个具有移位部分，以使浮子部分沿垂直于支撑板的方向移动，从而改变预定间隔。 可移动电极具有根据移位的浮子部分的位移。