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    Photodetecting element having an optical absorption layer, photodetecting device having an optical absorption layer, and auto lighting device
    5.
    发明授权
    Photodetecting element having an optical absorption layer, photodetecting device having an optical absorption layer, and auto lighting device 有权
    具有光吸收层的光检测元件，具有光吸收层的光电检测元件和自动照明器件

    公开(公告)号：US09341513B2

    公开(公告)日：2016-05-17

    申请号：US13570233

    申请日：2012-08-08

    申请人： Shunsuke Akasaka ,  Tetsuo Fujii ,  Koki Sakamoto

    发明人： Shunsuke Akasaka ,  Tetsuo Fujii ,  Koki Sakamoto

    IPC分类号： H01L31/0232 ,  G01J1/42 ,  G01J1/04 ,  H01L31/0203 ,  H01L31/0224 ,  H01L31/09

    CPC分类号： G01J1/4204 ,  G01J1/0488 ,  G01J1/429 ,  H01L31/0203 ,  H01L31/0224 ,  H01L31/09

    摘要： To provide both a photodetecting element and a photodetecting device which can prevent generating of a plurality of current paths, and can detect with stability and high sensitivity regardless of a surface state instability of an optical absorption layer. The photodetecting element includes an optically transparent substrate, an optical absorption layer, an electrode, an electrode, an adhesive layer, an insulating film, and a package. The optical absorption layer is formed on the optically transparent substrate, and a part of each the electrodes is embedded in the optical absorption layer. The photodetecting unit is bonded junction down with the adhesive layer on the package. The optical absorption layer absorbs light of a specified wavelength selectively to be converted into an electric signal. The light to be measured is irradiated from a back side surface of the optically transparent substrate.

    摘要翻译： 为了提供可以防止多个电流路径的产生的光检测元件和光电检测器件，并且不管光吸收层的表面状态不稳定，都可以以稳定性和高灵敏度进行检测。 光检测元件包括光学透明基板，光吸收层，电极，电极，粘合剂层，绝缘膜和封装。 光学吸收层形成在光学透明基板上，并且每个电极的一部分嵌入在光吸收层中。 光电检测单元与封装上的粘合剂层接合结合。 光吸收层选择性地吸收特定波长的光以转换成电信号。 从光学透明基板的背面侧照射被测光。

    Semiconductor physical quantity sensor
    6.
    发明授权
    Semiconductor physical quantity sensor 有权
    半导体物理量传感器

    公开(公告)号：US08759926B2

    公开(公告)日：2014-06-24

    申请号：US13033941

    申请日：2011-02-24

    申请人： Tetsuo Fujii ,  Keisuke Gotoh

    发明人： Tetsuo Fujii ,  Keisuke Gotoh

    IPC分类号： G11C11/15

    CPC分类号： G01P15/0802 ,  B81B7/0006 ,  B81B2201/0235 ,  B81B2203/0307 ,  B81B2207/095 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0877 ,  G01P2015/088 ,  H01L2224/48463

    摘要： In a semiconductor physical quantity sensor, a pattern portion including a wiring pattern as a wiring is formed on a surface of a first semiconductor substrate. A support substrate having a surface made of an electrically insulating material is prepared. The first semiconductor substrate is joined to the support substrate by bonding the pattern portion to the surface of the support substrate. Further, a sensor structure is formed in the first semiconductor substrate. The sensor structure is electrically connected to the wiring pattern. A cap is bonded to the first semiconductor substrate such that the sensor structure is hermetically sealed.

    摘要翻译： 在半导体物理量传感器中，在第一半导体衬底的表面上形成包括布线图案作为布线的图案部分。 准备具有由电绝缘材料制成的表面的支撑基板。 第一半导体衬底通过将图案部分结合到支撑衬底的表面而与支撑衬底接合。 此外，在第一半导体衬底中形成传感器结构。 传感器结构电连接到布线图案。 将盖接合到第一半导体基板，使得传感器结构被气密密封。

    Semiconductor dynamic quantity sensor and method of manufacturing the same
    8.
    发明授权
    Semiconductor dynamic quantity sensor and method of manufacturing the same 有权
    半导体动态量传感器及其制造方法

    公开(公告)号：US08413507B2

    公开(公告)日：2013-04-09

    申请号：US12801405

    申请日：2010-06-08

    申请人： Tetsuo Fujii ,  Hisanori Yokura ,  Hirofumi Higuchi

    发明人： Tetsuo Fujii ,  Hisanori Yokura ,  Hirofumi Higuchi

    IPC分类号： G01C19/56 ,  G01P15/125

    CPC分类号： H01L27/1203 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2201/047 ,  B81C1/00182 ,  G01C19/5755 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L21/84

    摘要： A semiconductor dynamic quantity sensor has a substrate including a semiconductor substrate, an insulation layer on a main surface of the semiconductor substrate, and a semiconductor layer on the insulation layer. The main surface has a projection that is trapezoidal or triangular in cross section. The semiconductor layer is divided by a through hole into a movable portion. A tip of the projection is located directly below the movable portion and spaced from the movable portion by a predetermined distance in a thickness direction of the substrate. A width of the tip of the projection is less than a width of the movable portion in a planar direction of the substrate. The distance between the tip of the projection and the movable portion is equal to a thickness of the insulation layer.

    摘要翻译： 半导体动态量传感器具有包括半导体衬底，半导体衬底的主表面上的绝缘层和绝缘层上的半导体层的衬底。 主表面具有横截面为梯形或三角形的突起。 半导体层由通孔分割成可动部。 突出部的尖端位于可动部的正下方，与基板的厚度方向与可动部隔开预定的距离。 突起的尖端的宽度小于基板的平面方向上的可动部的宽度。 突起的尖端和可动部之间的距离等于绝缘层的厚度。