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158 条记录 (耗时 0.038 秒)

    Process for producing semiconductor substrate
    142.
    发明授权
    Process for producing semiconductor substrate 失效
    半导体衬底的制造方法

    公开(公告)号：US06258698B1

    公开(公告)日：2001-07-10

    申请号：US09046600

    申请日：1998-03-24

    申请人： Yukiko Iwasaki ,  Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

    发明人： Yukiko Iwasaki ,  Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

    IPC分类号： H01L2130

    CPC分类号： H01L21/2007

    摘要： A process for producing a semiconductor substrate is provided which comprises a first step of anodizing a surface of a first substrate to form a porous layer on the surface, a second step of simultaneously forming a semiconductor layer on the surface of the porous layer and a semiconductor layer on a surface of the first substrate on its side opposite to the porous layer side, a third step of bonding the surface of the semiconductor layer formed on the surface of the porous layer to a surface of a second substrate, and a fourth step of separating the first substrate and the second substrate at the part of the porous layer to transfer to the second substrate the semiconductor layer formed on the surface of the porous layer, thereby providing the semiconductor layer on the surface of the second substrate. This makes it possible to produce semiconductor substrates at a low cost while making good use of expensive substrate materials.

    摘要翻译： 提供了一种制造半导体衬底的方法，其包括：第一步骤，阳极氧化第一衬底的表面以在表面上形成多孔层;第二步骤，在多孔层的表面上同时形成半导体层，半导体 在与第一基板的与多孔层侧相反的一侧的表面上的第三步骤，将形成在多孔层的表面上的半导体层的表面接合到第二基板的表面上的第三步骤， 在所述多孔层的一部分处分离所述第一基板和所述第二基板，以将所述半导体层转移到所述第二基板，所述半导体层形成在所述多孔层的表面上，从而在所述第二基板的表面上提供所述半导体层。 这使得可以以低成本制造半导体衬底，同时充分利用昂贵的衬底材料。

    Solar cell module and method of producing the same
    143.
    发明授权
    Solar cell module and method of producing the same 失效
    太阳能电池组件及其制造方法

    公开(公告)号：US06248948B1

    公开(公告)日：2001-06-19

    申请号：US09310953

    申请日：1999-05-13

    申请人： Katsumi Nakagawa ,  Shoji Nishida ,  Yukiko Iwasaki

    发明人： Katsumi Nakagawa ,  Shoji Nishida ,  Yukiko Iwasaki

    IPC分类号： H01L2500

    CPC分类号： H01L31/042 ,  H01L31/0443 ,  H01L31/0504 ,  Y02E10/50

    摘要： A solar cell module comprises a plurality of unit cells connected in series, each of the unit cells comprising in this order an electrode, a first semiconductor layer having a first conductivity type and a second semiconductor layer having a second conductivity type. The electrode has a region not covered with the first semiconductor layer. The second semiconductor layer has a main region and a subregion which are separated by a groove. The main region of the second semiconductor layer in one unit cell is electrically connected to the region of the electrode not covered with the first semiconductor layer in another unit cell adjacent to the one unit cell. The region of the electrode not covered with the first semiconductor layer in the one unit cell is electrically connected to the subregion of the second semiconductor layer in the another unit cell. With this structure, it is possible to simplify the formation of a bypass diode and therefore provide a solar cell module with high reliability at a low cost.

    摘要翻译： 太阳能电池模块包括串联连接的多个单元电池，每个单电池依次包括电极，具有第一导电类型的第一半导体层和具有第二导电类型的第二半导体层。 电极具有未被第一半导体层覆盖的区域。 第二半导体层具有由沟槽分隔开的主区域和子区域。 一个单元电池中的第二半导体层的主要区域与在一个单位电池相邻的另一单元电池中未被第一半导体层覆盖的电极的区域电连接。 在一个单元电池中没有被第一半导体层覆盖的电极的区域电连接到另一个晶胞中的第二半导体层的子区域。 利用这种结构，可以简化旁路二极管的形成，从而以低成本提供高可靠性的太阳能电池模块。

    Method for the formation of an indium oxide film by electrodeposition process or electroless deposition process, a substrate provided with the indium oxide film for a semiconductor element, and a semiconductor element provided with the substrate
    144.
    发明授权
    Method for the formation of an indium oxide film by electrodeposition process or electroless deposition process, a substrate provided with the indium oxide film for a semiconductor element, and a semiconductor element provided with the substrate 有权
    通过电沉积法或无电沉积法形成氧化铟膜的方法，设置有用于半导体元件的氧化铟膜的衬底以及设置有衬底的半导体元件

    公开(公告)号：US6110347A

    公开(公告)日：2000-08-29

    申请号：US172774

    申请日：1998-10-15

    申请人： Kozo Arao ,  Katsumi Nakagawa ,  Yukiko Iwasaki

    发明人： Kozo Arao ,  Katsumi Nakagawa ,  Yukiko Iwasaki

    IPC分类号： H01L31/0224 ,  H01L31/052 ,  H01L31/075 ,  H01L31/18 ,  C25D9/00 ,  B05D1/18 ,  C25D9/04 ,  C25D9/10

    CPC分类号： H01L31/022466 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/548

    摘要： A method for forming an indium oxide film on an electrically conductive substrate by immersing the substrate and a counter electrode in an aqueous solution containing at least nitrate and indium ions and flowing an electric current between the substrate and the couter electrode, thereby causing indium oxide film formation on the substrate, is provided. A substrate for a semiconductor element and a photovoltaic element produced using the film forming method are also provided. An aqueous solution for the formation of an indium oxide film by an electroless deposition process, containing at least nitrate and indium ions and tartrate, is also disclosed. A film-forming method for the formation of an indium oxide film on a substrate by an electroless deposition process, using the aqueous solution, and a substrate for a semiconductor element and a photovoltaic element produced using the film-forming method are further provided.

    摘要翻译： 一种通过将基板和对电极浸入至少含有硝酸盐和铟离子的水溶液中并在基板和couter电极之间流动电流从而在导电基板上形成氧化铟膜的方法，从而使氧化铟膜 提供了衬底上的形成。 还提供了一种用于半导体元件的基板和使用该膜形成方法制造的光电元件。 还公开了通过无电沉积方法形成氧化铟膜的水溶液，其至少含有硝酸盐和铟离子和酒石酸盐。 还提供了一种通过使用该水溶液的无电沉积工艺在衬底上形成氧化铟膜的膜形成方法，以及使用该膜形成方法制造的半导体元件用基板和光电元件。

    Process for preparing a functional thin film by way of the chemical reaction among active species and apparatus therefor
    149.
    发明授权
    Process for preparing a functional thin film by way of the chemical reaction among active species and apparatus therefor 失效
    通过活性物质与其装置之间的化学反应制备功能性薄膜的方法

    公开(公告)号：US5269848A

    公开(公告)日：1993-12-14

    申请号：US46906

    申请日：1993-04-15

    申请人： Katsumi Nakagawa

    发明人： Katsumi Nakagawa

    IPC分类号： C23C16/452 ,  C23C16/48 ,  C23C16/50

    CPC分类号： C23C16/452

    摘要： An apparatus for forming a functional silicon- or germanium-containing amorphous deposited film on a substrate which comprises a film-forming chamber having a film-forming space, a substrate holder and an electric heater for positioning the substrate in the film-forming chamber, an exhaust pipe in fluid communication with the film-forming chamber, a first gas-introducing portion for providing an active species (H), having an activation space for generating the active species (H), a microwave discharge supply source and a passage for providing a gaseous hydrogen-containing material into the activation space in order to produce the active species (H), a second gas-introducing portion for providing a gaseous silicon-or germanium-containing material (X), capable of reacting with the active species (H) to form a reaction product (HX) that is capable of forming the functional deposited film on the substrate, and a transportation path having a mixing space and a second microwave discharge energy supply source for promoting reaction with the active species.

    摘要翻译： 一种用于在基板上形成功能硅或锗的无定形沉积膜的装置，包括具有成膜空间的成膜室，用于将基板定位在成膜室中的基板保持器和电加热器， 与成膜室流体连通的排气管，用于提供活性物质（H）的第一气体引入部分，具有用于产生活性物质（H）的活化空间，微波放电源和用于 向所述活化空间提供含气态气态物质以产生活性物质（H）;第二气体导入部分，其用于提供含有活性物质的活性物质（X）的气态含硅或含锗材料（X） （H）形成能够在基板上形成功能性沉积膜的反应产物（HX），以及具有混合空间和第二微波排出孔的输送路径 促进与活性物种反应的供应来源。