公开(公告)号：US09691645B2

公开(公告)日：2017-06-27

申请号：US14820422

申请日：2015-08-06

Applicant: Applied Materials, Inc.

Inventor： David Benjaminson ,  Dmitry Lubomirsky ,  Ananda Seelavanth Math ,  Saravanakumar Natarajan ,  Shubham Chourey

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/687 ,  H01L21/324

CPC classification number: H01L21/67103 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/324 ,  H01L21/68742 ,  H01L21/68785

Abstract: A workpiece holder includes a puck, first and second heating devices in thermal communication with respective inner and outer portions of the puck, and a thermal sink in thermal communication with the puck. The first and second heating devices are independently controllable, and the first and second heating devices are in greater thermal communication with the puck, than thermal communication of the thermal sink with the puck. A method of controlling temperature distribution of a workpiece includes flowing a heat exchange fluid through a thermal sink to establish a reference temperature to a puck, raising temperatures of radially inner and outer portions of the puck to first and second temperatures greater than the reference temperature, by activating respective first and second heating devices disposed in thermal communication with the radially inner and outer portions of the puck, and placing the workpiece on the puck.

公开(公告)号：US09659753B2

公开(公告)日：2017-05-23

申请号：US14454493

申请日：2014-08-07

Applicant: Applied Materials, Inc.

Inventor： Tae Cho ,  Sang Won Kang ,  Dongqing Yang ,  Raymond W. Lu ,  Peter Hillman ,  Nicholas Celeste ,  Tien Fak Tan ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32

CPC classification number: H01J37/3255 ,  H01J37/32082

Abstract: A plasma source includes a first electrode and a second electrode having respective surfaces, and an insulator that is between and in contact with the electrodes. The electrode surfaces and the insulator surface substantially define a plasma cavity. The insulator surface defines one or more grooves configured to prevent deposition of material in a contiguous form on the insulator surface. A method of generating a plasma includes introducing one or more gases into a plasma cavity defined by a first electrode, a surface of an insulator that is in contact with the first electrode, and a second electrode that faces the first electrode. The insulator surface defines one or more grooves where portions of the insulator surface are not exposed to a central region of the cavity. The method further includes providing RF energy across the first and second electrodes to generate the plasma within the cavity.

公开(公告)号：US20170062184A1

公开(公告)日：2017-03-02

申请号：US14838086

申请日：2015-08-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Toan Q. Tran ,  Soonam Park ,  Zilu Weng ,  Dmitry Lubomirsky

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32532 ,  H01J37/32715

Abstract: An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and faces the gas distribution device such that the first plasma products pass through the plurality of fourth apertures. The workpiece chuck faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the workpiece chuck. The fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device.

Abstract translation: 一种等离子体处理装置，包括第一等离子体源，第一平面电极，气体分配装置，等离子体阻挡屏和工件卡盘。 第一等离子体源产生通过第一等离子体源穿过第一平面电极中的第一孔的第一等离子体产物。 第一等离子体产物继续通过气体分配装置中的第二孔。 等离子体阻挡屏幕包括具有第四孔的第三板，面向气体分配装置，使得第一等离子体产物通过多个第四孔。 工件卡盘面对等离子体阻挡屏幕的第二侧，在等离子体阻挡屏幕和工件卡盘之间限定一个处理室。 第四孔具有足够小的尺寸以阻挡在处理室中产生的等离子体到达气体分配装置。

公开(公告)号：US20170040191A1

公开(公告)日：2017-02-09

申请号：US14820422

申请日：2015-08-06

Applicant: Applied Materials, Inc.

Inventor： David Benjaminson ,  Dmitry Lubomirsky ,  Ananda Seelavanth Math ,  Saravanakumar Natarajan ,  Shubham Chourey

IPC: H01L21/67 ,  H01L21/324 ,  H01L21/687

CPC classification number: H01L21/67103 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/324 ,  H01L21/68742 ,  H01L21/68785

Abstract: A workpiece holder includes a puck, first and second heating devices in thermal communication with respective inner and outer portions of the puck, and a thermal sink in thermal communication with the puck. The first and second heating devices are independently controllable, and the first and second heating devices are in greater thermal communication with the puck, than thermal communication of the thermal sink with the puck. A method of controlling temperature distribution of a workpiece includes flowing a heat exchange fluid through a thermal sink to establish a reference temperature to a puck, raising temperatures of radially inner and outer portions of the puck to first and second temperatures greater than the reference temperature, by activating respective first and second heating devices disposed in thermal communication with the radially inner and outer portions of the puck, and placing the workpiece on the puck.

Abstract translation: 工件保持器包括与圆盘相应的内部和外部部分热连通的圆盘，第一和第二加热装置以及与该冰球热连通的散热器。 第一和第二加热装置是可独立控制的，并且第一和第二加热装置与冰球的热连通比热盘与冰球热传递更大。 一种控制工件温度分布的方法包括使热交换流体流过散热器，以建立对圆盘的参考温度，将圆盘的径向内部和外部部分的温度升高到高于参考温度的第一和第二温度， 通过激活被设置成与圆盘的径向内部和外部热连通的相应的第一和第二加热装置，并将工件放置在冰球上。

公开(公告)号：US20160240402A1

公开(公告)日：2016-08-18

申请号：US15139243

申请日：2016-04-26

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/32972 ,  C23C16/455 ,  C23C16/45536 ,  C23C16/45559 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32119 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32623 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/26

Abstract: A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

公开(公告)号：US20160148821A1

公开(公告)日：2016-05-26

申请号：US14554250

申请日：2014-11-26

Applicant: Applied Materials, Inc.

Inventor： Saravjeet Singh ,  Alan Tso ,  Jingchun Zhang ,  Zihui Li ,  Hanshen Zhang ,  Dmitry Lubomirsky

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32724 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32715 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069

Abstract: A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.

Abstract translation: 半导体处理室可以包括远程等离子体区域和与远程等离子体区域流体耦合的处理区域。 处理区域可以被配置为将基板容纳在支撑基座上。 支撑基座可以包括在基座的内部区域处的第一材料。 支撑基座还可以包括与基座的远侧部分或基座的外部区域联接的环形构件。 环形构件可以包括不同于第一材料的第二材料。

公开(公告)号：US09343289B2

公开(公告)日：2016-05-17

申请号：US13830608

申请日：2013-03-14

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja Prasad Kanungo ,  Dmitry Lubomirsky

IPC: C23C4/10 ,  H01L21/02 ,  H01J37/32 ,  C04B41/87 ,  C04B41/00 ,  C04B41/50

CPC classification number: H01J37/32495 ,  C04B41/009 ,  C04B41/5042 ,  C04B41/87 ,  C23C4/11 ,  C23C4/134 ,  H01J37/32477 ,  H01L21/02 ,  H01L21/67017 ,  Y10T428/24413 ,  Y10T428/2495 ,  Y10T428/24975 ,  Y10T428/252 ,  C04B35/10 ,  C04B35/565 ,  C04B41/4527 ,  C04B41/5032

Abstract: To manufacture a coating for an article for a semiconductor processing chamber, the article including a body of at least one of Al, Al2O3, or SiC, and a ceramic coating on the body. The ceramic coating includes a compound comprising Y2O3 in a range from about 50 mol % to about 75 mol %, ZrO2 in a range from about 10 mol % to about 30 mol %, and Al2O3 in a range from about 10 mol % to about 30 mol %, wherein the number of nodules per inch is in a range from about 30 nodules to about 45 nodules and the porosity is in a range from about 2.5% to about 3.2%.

Abstract translation: 为了制造用于半导体处理室的制品的涂层，该制品包括Al，Al 2 O 3或SiC中的至少一种的主体和在主体上的陶瓷涂层。 陶瓷涂层包括包含约50mol％至约75mol％范围内的Y 2 O 3，约10mol％至约30mol％范围内的ZrO 2和约10mol％至约30mol％范围内的Al 2 O 3的化合物 mol％，其中每英寸的结节数在约30个结节到约45个结节的范围内，孔隙率在约2.5％至约3.2％的范围内。

公开(公告)号：US20160042924A1

公开(公告)日：2016-02-11

申请号：US14820440

申请日：2015-08-06

Applicant: Applied Materials, Inc.

Inventor： Sung Je Kim ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  C23C14/08

CPC classification number: H01J37/32559 ,  C23C14/081 ,  C23C14/083 ,  C23C14/28 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449

Abstract: A faceplate or a selectivity modulation device (SMD) for a plasma generation chamber has a plasma resistant ceramic coating on a surface of the faceplate or SMD, wherein the plasma resistant ceramic coating comprises a thickness of less than approximately 30 microns, a porosity of less than 1% and a thickness non-uniformity of less than 4%.

Abstract translation: 用于等离子体发生室的面板或选择性调制装置（SMD）在面板或SMD的表面上具有耐等离子体陶瓷涂层，其中耐等离子体陶瓷涂层包括小于约30微米的厚度，孔隙率较小 超过1％，厚度不均匀度小于4％。

公开(公告)号：US20160027673A1

公开(公告)日：2016-01-28

申请号：US14875479

申请日：2015-10-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/67 ,  H01L21/677

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US20150241362A1

公开(公告)日：2015-08-27

申请号：US14628733

申请日：2015-02-23

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Yufei Zhu ,  Saurabh Garg ,  Soonam Park ,  Dmitry Lubomirsky

IPC: G01N22/00

CPC classification number: G01N22/00

Abstract: A test device for testing an electrical property of a chamber component, such as a ceramic ring, includes an outer conductor and an inner conductor disposed within and electrically isolated from the outer conductor. The outer conductor has a base, a top, and an interior sidewall disposed between the base and the top. The inner conductor has a top portion having a first diameter and a bottom portion having a second diameter, in which the second diameter is greater than the first diameter. A sample area is defined between the base of the outer conductor and the bottom portion of the inner conductor, and is configured to receive a chamber component. The electrical property of the chamber component and wherein an electrical property of the chamber component is measurable based on application of a signal to at least one of the outer conductor or the inner conductor.

Abstract translation: 用于测试诸如陶瓷环的腔室部件的电性能的测试装置包括外部导体和布置在外部导体中并与外部导体电隔离的内部导体。 外部导体具有设置在基部和顶部之间的基部，顶部和内部侧壁。 内部导体具有具有第一直径的顶部部分和具有第二直径的底部部分，其中第二直径大于第一直径部分。 样品区域被限定在外部导体的底部和内部导体的底部之间，并被构造成容纳腔室部件。 基于将信号施加到外部导体或内部导体中的至少一个可以测量室部件的电性能并且其中室部件的电特性是可测量的。