公开(公告)号：US20170047108A1

公开(公告)日：2017-02-16

申请号：US15242423

申请日：2016-08-19

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Lei Luo ,  Liji Gopalakrishnan

IPC: G11C11/4076 ,  G06F1/32 ,  G06F1/08 ,  G11C11/408

CPC classification number: G11C11/4076 ,  G06F1/04 ,  G06F1/08 ,  G06F1/3234 ,  G06F1/3237 ,  G11C7/1072 ,  G11C7/20 ,  G11C7/22 ,  G11C11/4072 ,  G11C11/4074 ,  G11C11/4087 ,  G11C11/4096 ,  Y02D10/128 ,  Y02D50/20

Abstract: An integrated circuit includes a physical layer interface having a control timing domain and a data timing domain, and circuits that enable the control timing domain during a change in power conservation mode in response to a first event, and that enable the data timing domain in response to a second event. The control timing domain can include interface circuits coupled to a command and address path, and the data timing domain can include interface circuits coupled to a data path.

Abstract translation: 集成电路包括具有控制定时域和数据定时域的物理层接口，以及响应于第一事件而在功率节省模式改变期间实现控制定时域的电路，并且响应于数据定时域 到第二个事件。 控制定时域可以包括耦合到命令和地址路径的接口电路，并且数据定时域可以包括耦合到数据路径的接口电路。

公开(公告)号：US09552865B2

公开(公告)日：2017-01-24

申请号：US14931513

申请日：2015-11-03

Applicant: Rambus Inc.

Inventor： Thomas J. Giovannini ,  Alok Gupta ,  Ian Shaeffer ,  Steven C. Woo

IPC: G11C11/4076 ,  G06F3/06 ,  G06F5/06 ,  G06F1/08 ,  G11C7/10 ,  G06F13/16 ,  G06F12/06 ,  G11C11/409 ,  G11C11/4096

CPC classification number: G11C11/4076 ,  G06F1/08 ,  G06F3/0629 ,  G06F3/0634 ,  G06F5/06 ,  G06F12/0646 ,  G06F13/1689 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/1093 ,  G11C11/409 ,  G11C11/4096 ,  G11C2207/2254

Abstract: A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.

Abstract translation: 描述了校准执行写操作所涉及的信号之间的时序关系的系统。 该系统包括耦合到一组存储器芯片的存储器控​​制器，其中每个存储器芯片包括相位检测器，该相位检测器被配置为在数据选通信号和存储器芯片之间从存储器控制器接收的时钟信号之间校准相位关系 一个写操作。 此外，存储器控制器被配置为执行一个或多个写入读取验证操作以校准数据选通信号和时钟信号之间的时钟周期关系，其中写入 - 读取验证操作涉及改变在 相对于时钟信号的数据选通信号乘以时钟周期的倍数。

公开(公告)号：US20160203848A1

公开(公告)日：2016-07-14

申请号：US15000394

申请日：2016-01-19

Applicant: Rambus Inc.

Inventor： Ian Shaeffer

IPC: G11C7/10 ,  G06F12/10

CPC classification number: G11C7/1048 ,  G06F12/1009 ,  G06F12/1027 ,  G06F13/16 ,  G06F13/1673 ,  G06F2212/657 ,  G06F2212/68 ,  G11C7/1072 ,  Y02D10/14

Abstract: Described are memory modules that include a configurable signal buffer that manages communication between memory devices and a memory controller. The buffer can be configured to support threading to reduce access granularity, the frequency of row-activation, or both. The buffer can translate controller commands to access information of a specified granularity into subcommands seeking to access information of reduced granularity. The reduced-granularity information can then be combined, as by concatenation, and conveyed to the memory controller as information of the specified granularity.

Abstract translation: 描述的是包括管理存储器设备和存储器控制器之间的通信的可配置信号缓冲器的存储器模块。 缓冲区可以配置为支持线程以减少访问粒度，行激活的频率，或两者兼而有之。 缓冲区可以转换控制器命令以将指定粒度的信息访问寻求访问降低粒度的信息的子命令。 然后可以通过连接将小粒度信息组合起来，并将其作为指定粒度的信息传送到存储器控制器。

公开(公告)号：US20160188498A1

公开(公告)日：2016-06-30

申请号：US14801723

申请日：2015-07-16

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Ely Tsern ,  Craig Hampel

IPC: G06F13/16 ,  G06F13/40

CPC classification number: G11C11/4093 ,  G06F13/16 ,  G06F13/4027 ,  G06F13/4068 ,  G11C5/025 ,  G11C5/04 ,  G11C5/06 ,  G11C7/1006 ,  G11C7/22 ,  G11C7/222 ,  G11C11/4076 ,  G11C11/4091 ,  G11C11/4094 ,  G11C11/4096 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/18 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/1005 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.

公开(公告)号：US20160170924A1

公开(公告)日：2016-06-16

申请号：US15051282

申请日：2016-02-23

Applicant: Rambus Inc.

Inventor： Liji Gopalakrishnan ,  Ian Shaeffer ,  Yi Lu

IPC: G06F13/40 ,  G06F13/16

CPC classification number: G06F13/4068 ,  G06F13/1673 ,  G06F13/1678 ,  G11C5/04 ,  G11C7/1012 ,  G11C7/1039 ,  G11C7/1045 ,  G11C7/1075 ,  G11C11/4093 ,  G11C11/4094 ,  G11C11/4096 ,  Y02D10/14 ,  Y02D10/151

Abstract: A memory device or module selects between alternative command ports. Memory systems with memory modules incorporating such memory devices support point-to-point connectivity and efficient interconnect usage for different numbers of modules. The memory devices and modules can be of programmable data widths. Devices on the same module can be configured select different command ports to facilitate memory threading. Modules can likewise be configured to select different command ports for the same purpose.

Abstract translation: 存储器件或模块在可选命令端口之间进行选择。 具有内存模块的内存系统包含这种内存设备，可支持点对点连接和不同数量模块的高效互连使用。 存储器件和模块可以是可编程数据宽度。 同一模块上的设备可以配置为选择不同的命令端口，以便于内存线程化。 模块同样可以配置为为同一目的选择不同的命令端口。

公开(公告)号：US20160026583A1

公开(公告)日：2016-01-28

申请号：US14871754

申请日：2015-09-30

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Frederick A. Ware

IPC: G06F12/14 ,  G06F13/16 ,  G06F12/02

CPC classification number: G06F12/1458 ,  G06F12/023 ,  G06F13/16 ,  G06F13/1657 ,  G06F13/1684 ,  G06F13/1694 ,  G06F2212/1044 ,  G06F2212/1052

Abstract: A multi-rank memory system in which calibration operations are performed between a memory controller and one rank of memory while data is transferred between the controller and other ranks of memory. A memory controller performs a calibration operation that calibrates parameters pertaining to transmission of data via a first data bus between the memory controller and a memory device in a first rank of memory. While the controller performs the calibration operation, the controller also transfers data with a memory device in a second rank of memory via a second data bus.

Abstract translation: 一种多级存储器系统，其中在存储器控制器和一级存储器之间执行校准操作，同时数据在控制器和其他等级的存储器之间传送。 存储器控制器执行校准操作，其校准与存储器控制器和存储器的第一等级中的存储器件之间经由第一数据总线的数据传输有关的参数。 当控制器执行校准操作时，控制器还经由第二数据总线将存储器件中的数据与第二等级的存储器传送数据。

公开(公告)号：US20150348612A1

公开(公告)日：2015-12-03

申请号：US14799362

申请日：2015-07-14

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Lei Luo ,  Liji Gopalakrishnan

IPC: G11C11/4076 ,  G11C11/4096

CPC classification number: G11C11/4076 ,  G06F1/04 ,  G06F1/08 ,  G06F1/3234 ,  G06F1/3237 ,  G11C7/1072 ,  G11C7/20 ,  G11C7/22 ,  G11C11/4072 ,  G11C11/4074 ,  G11C11/4087 ,  G11C11/4096 ,  Y02D10/128 ,  Y02D50/20

Abstract: An integrated circuit includes a physical layer interface having a control timing domain and a data timing domain, and circuits that enable the control timing domain during a change in power conservation mode in response to a first event, and that enable the data timing domain in response to a second event. The control timing domain can include interface circuits coupled to a command and address path, and the data timing domain can include interface circuits coupled to a data path.

Abstract translation: 集成电路包括具有控制定时域和数据定时域的物理层接口，以及响应于第一事件而在功率节省模式改变期间实现控制定时域的电路，并且响应于数据定时域 到第二个事件。 控制定时域可以包括耦合到命令和地址路径的接口电路，并且数据定时域可以包括耦合到数据路径的接口电路。

公开(公告)号：US09177632B2

公开(公告)日：2015-11-03

申请号：US14714722

申请日：2015-05-18

Applicant: Rambus Inc.

Inventor： Thomas J. Giovannini ,  Alok Gupta ,  Ian Shaeffer ,  Steven C. Woo

IPC: G06F12/00 ,  G11C11/4076 ,  G11C11/409 ,  G06F3/06 ,  G06F12/06

CPC classification number: G11C11/4076 ,  G06F1/08 ,  G06F3/0629 ,  G06F3/0634 ,  G06F5/06 ,  G06F12/0646 ,  G06F13/1689 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/1093 ,  G11C11/409 ,  G11C11/4096 ,  G11C2207/2254

Abstract: A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.

Abstract translation: 描述了校准执行写操作所涉及的信号之间的时序关系的系统。 该系统包括耦合到一组存储器芯片的存储器控​​制器，其中每个存储器芯片包括相位检测器，该相位检测器被配置为在数据选通信号和存储器芯片之间从存储器控制器接收的时钟信号之间校准相位关系 一个写操作。 此外，存储器控制器被配置为执行一个或多个写入读取验证操作以校准数据选通信号和时钟信号之间的时钟周期关系，其中写入 - 读取验证操作涉及改变在 相对于时钟信号的数据选通信号乘以时钟周期的倍数。

公开(公告)号：US08947962B2

公开(公告)日：2015-02-03

申请号：US14088277

申请日：2013-11-22

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Kyung Suk Oh

IPC: G11C5/06 ,  G11C11/4063 ,  G11C29/02 ,  G11C5/04 ,  G11C11/4097 ,  G11C7/18 ,  G11C5/02

CPC classification number: G11C7/22 ,  G11C5/025 ,  G11C5/04 ,  G11C5/06 ,  G11C5/063 ,  G11C7/18 ,  G11C11/4063 ,  G11C11/4097 ,  G11C29/02 ,  G11C29/022 ,  G11C29/025 ,  G11C29/028

Abstract: A memory controller is disclosed. The memory controller is configured to be connected to one or more memory devices via an address and control (RQ) bus. Each of the memory devices have on-die termination (ODT) circuitry connected to a subset of signal lines of the RQ bus, and the memory controller is operable to selectively disable the ODT circuitry in at least one memory device of the one or more memory devices.

Abstract translation: 公开了一种存储器控制器。 存储器控制器被配置为经由地址和控制（RQ）总线连接到一个或多个存储器件。 每个存储器件具有连接到RQ总线的信号线子集的片上终端（ODT）电路，并且存储器控制器可操作地选择性地禁用该一个或多个存储器的至少一个存储器件中的ODT电路 设备。

公开(公告)号：US20140223068A1

公开(公告)日：2014-08-07

申请号：US14015648

申请日：2013-08-30

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Ely Tsern ,  Craig Hampel

IPC: G06F13/40

CPC classification number: G11C11/4093 ,  G06F13/16 ,  G06F13/4027 ,  G06F13/4068 ,  G11C5/025 ,  G11C5/04 ,  G11C5/06 ,  G11C7/1006 ,  G11C7/22 ,  G11C7/222 ,  G11C11/4076 ,  G11C11/4091 ,  G11C11/4094 ,  G11C11/4096 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/18 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/1005 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.

Abstract translation: 除了其它实施例之外，系统包括集成电路缓冲器件（可耦合到主器件，例如存储器控制器）与多个集成电路存储器件之间的拓扑（数据和/或控制/地址信息）。 例如，可以响应于从集成电路缓冲器装置提供的控制/地址信息，在多个集成电路存储器件和集成电路缓冲器件之间使用单独的分段（或点到点链路）信号路径提供数据， 所述多个集成电路缓冲器件使用单个飞越（或总线）信号路径。 集成电路缓冲器件实现了多个集成电路存储器件的可配置的有效存储器组织。 由集成电路缓冲器件表示为存储器控制器的存储器组织可以不同于后面或耦合到集成电路缓冲器件的实际存储器组织。 缓冲器设备将期望特定内存组织的内存控制器和实际内存组织之间传输的数据进行分段并合并。