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公开(公告)号：US09771496B2
公开(公告)日：2017-09-26
申请号：US14924997
申请日：2015-10-28
发明人： Kevin Dockery , Helin Huang , Lin Fu , Tina Li
摘要： Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.
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公开(公告)号：US09688885B2
公开(公告)日：2017-06-27
申请号：US14919449
申请日：2015-10-21
发明人： Steven Kraft , Andrew Wolff , Phillip W. Carter , Kristin Hayes , Benjamin Petro
IPC分类号： H01L21/302 , H01L21/461 , C09G1/02 , B24B37/04 , H01L21/321
CPC分类号： C09G1/02 , B24B37/044 , C23F3/04 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR1R2R3 wherein R1, R2, and R3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R1, R2, and R3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl-α-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-α-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.
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13.发明授权公开(公告)号：US09534147B2
公开(公告)日：2017-01-03
申请号：US14515723
申请日：2014-10-16
IPC分类号： C09G1/02 , B24B37/04 , H01L21/306 , G11B5/84
CPC分类号： C09G1/02 , B24B37/044 , G11B5/8404 , H01L21/30625
摘要： The invention provides a polishing composition that contains (a) α-alumina particles that have an average particle size of about 250 nm to about 300 nm, (b) a per-type oxidizing agent, (c) a complexing agent, wherein the complexing agent is an amino acid or an organic acid, and (d) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition.
摘要翻译： 本发明提供了一种抛光组合物，其含有（a）平均粒度为约250nm至约300nm的α-氧化铝颗粒，（b）每种型氧化剂，（c）络合剂，其中络合 药剂是氨基酸或有机酸，和（d）水。 本发明还提供了用抛光组合物抛光基底，特别是镍 - 磷基底的方法。
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公开(公告)号：US09505952B2
公开(公告)日：2016-11-29
申请号：US14639564
申请日：2015-03-05
发明人： Brian Reiss , Dana Sauter Van Ness , Viet Lam , Alexander Hains , Steven Kraft , Renhe Jia
IPC分类号： C09G1/04 , H01L21/302 , B24B37/04 , H01L21/321 , H01L21/306 , B24B1/00 , C09K3/14 , C09K13/06 , C09G1/06 , C09G1/02 , C09G1/00
CPC分类号： C09G1/02 , B24B1/00 , B24B37/044 , B24B37/20 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1409 , C09K3/1454 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/31053 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.
摘要翻译： 本发明提供了一种化学机械抛光组合物，其包括第一磨料颗粒，其中第一磨料颗粒是湿法二氧化铈颗粒，其中值粒径为约40nm至约100nm，以抛光组合物的浓度存在于抛光组合物中 约0.005重量％ ％至约2wt。 ％，并且具有至少约300nm的粒度分布，官能化杂环，pH调节剂和水性载体，并且其中抛光组合物的pH为约1至约6.本发明还提供了一种 将抛光组合物抛光衬底，特别是包含氧化硅层的衬底的方法。
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15.发明授权Composition and method for polishing memory hard disks exhibiting reduced edge roll-off 有权用于抛光显示减少边缘滚降的存储硬盘的组合物和方法公开(公告)号：US09481811B2
公开(公告)日：2016-11-01
申请号：US14627081
申请日：2015-02-20
发明人： Tong Li , Hon-Wu Lau , Michael White
IPC分类号： C09G1/04 , B24B1/00 , C09G1/02 , B24B37/04 , H01L21/321 , H01L21/306 , C09K3/14 , C09K13/06 , C09G1/00 , C09G1/06
CPC分类号： C09G1/04 , B24B1/00 , B24B37/044 , C09G1/00 , C09G1/02 , C09G1/06 , C09K3/1454 , C09K3/1463 , C09K13/06 , G11B5/8404 , G11B23/505 , H01L21/30625 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition containing (a) an abrasive selected from wet-process silica, alpha alumina, fumed alumina, ceria, zirconia, titania, and combinations thereof, (b) an oxidation catalyst, (c) a non-transition metal sulfate salt, (d) a complexing agent, (e) hydrogen peroxide, (f) a nonionic surfactant, (g) an anionic surfactant, and (h) water. The polishing composition has a pH of about 1 to about 5, and the polishing composition is substantially free of a peroxydisulfate salt. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
摘要翻译： 本发明提供一种化学机械抛光组合物，其包含（a）选自湿法二氧化硅，α氧化铝，热解氧化铝，二氧化铈，氧化锆，二氧化钛及其组合的研磨剂，（b）氧化催化剂，（c） 过渡金属硫酸盐，（d）络合剂，（e）过氧化氢，（f）非离子表面活性剂，（g）阴离子表面活性剂和（h）水。 抛光组合物的pH为约1至约5，并且抛光组合物基本上不含过氧化二硫酸盐。 本发明还提供了一种通过使基底与抛光垫和化学机械抛光组合物接触来对基底，特别是镍 - 磷基底进行化学机械抛光的方法，相对于基底移动抛光垫和抛光组合物， 并研磨基底的至少一部分以抛光基底。
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公开(公告)号：US09434859B2
公开(公告)日：2016-09-06
申请号：US14035037
申请日：2013-09-24
摘要： The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles that comprise ceria, zirconia, silica, alumina, or a combination thereof, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, an amino acid, or a hydroxy-substituted N-heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 4.
摘要翻译： 本发明提供化学机械抛光组合物和用化学机械抛光组合物对基材进行化学机械研磨的方法。 抛光组合物包含（a）包含二氧化铈，氧化锆，二氧化硅，氧化铝或其组合的磨料颗粒，（b）作为路易斯酸的金属离子，（c）作为芳族羧酸的配体，芳族 磺酸，芳香酸酰胺，氨基酸或羟基取代的N-杂环，和（d）水性载体，其中化学机械抛光组合物的pH在约1至约4的范围内。
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17.发明授权CMP polishing pad having edge exclusion region of offset concentric groove pattern 有权CMP抛光垫具有偏移同心凹槽图案的边缘排除区域公开(公告)号：US09409276B2
公开(公告)日：2016-08-09
申请号：US14515560
申请日：2014-10-16
发明人： Ching-Ming Tsai , Shi-Wei Cheng , Jia-Cheng Hsu , Kun-Shu Yang , Hui-Feng Chen , Gregory Gaudet , Sheng-Huan Liu
IPC分类号： B24B37/26
CPC分类号： B24B37/26
摘要： The invention provides a polishing pad and a method of using the polishing pad for chemically-mechanically polishing a substrate. The polishing pad comprises at least a grooved region and an exclusion region, wherein the exclusion region is adjacent to the circumference of the polishing pad, and wherein the exclusion region is devoid of grooves.
摘要翻译： 本发明提供一种抛光垫和使用抛光垫对基材进行化学机械研磨的方法。 抛光垫至少包括一个沟槽区域和一个排除区域，其中排除区域与抛光垫的圆周相邻，并且其中排除区域没有凹槽。
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公开(公告)号：US09330703B2
公开(公告)日：2016-05-03
申请号：US12455631
申请日：2009-06-04
CPC分类号： G11B5/8404 , C09G1/02 , C09K3/1409 , C09K3/1463 , C23F1/14 , G11B23/505
摘要： The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, a complexing agent, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
摘要翻译： 本发明提供了一种化学机械抛光组合物，其包含α氧化铝，热解氧化铝，二氧化硅，氧化镍 - 磷的氧化剂，络合剂和水。 本发明还提供了一种对基材进行化学机械抛光的方法，包括使基底与抛光垫和化学机械抛光组合物相接触，使抛光垫和抛光组合物相对于基底移动，并研磨至少一部分 底物抛光底物。
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19.发明授权Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials 有权氧化硅，氮化硅和多晶硅材料的CMP的组成和方法公开(公告)号：US09303187B2
公开(公告)日：2016-04-05
申请号：US13947449
申请日：2013-07-22
发明人： Dimitry Dinega , Kevin Moeggenborg , William Ward , Daniel Mateja
IPC分类号： H01L21/304 , C09G1/02 , H01L21/306 , C09G1/00 , C09G1/04 , C09K13/06 , C09K3/14 , B24B1/00 , H01L21/3105 , H01L21/321
CPC分类号： C09G1/02 , B24B1/00 , C09G1/00 , C09G1/04 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/31053 , H01L21/3212
摘要： The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.
摘要翻译： 本发明提供了一种用于抛光包含二氧化硅，氮化硅和多晶硅的衬底的化学机械抛光方法。 该方法包括用CMP组合物研磨衬底的表面以从其中去除至少一些二氧化硅，氮化硅和多晶硅。 该CMP组合物包含悬浮在pH约为3至9.5并含有阳离子聚合物的水性载体中的颗粒状二氧化铈磨料; 其中阳离子聚合物由季甲基丙烯酰氧基烷基铵聚合物组成。
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20.发明申请公开(公告)号：US20150184029A1
公开(公告)日：2015-07-02
申请号：US14657594
申请日：2015-03-13
发明人： Steven GRUMBINE , Shoutian Ll , William Ward , Pankaj Singh , Jeffrey Dysard
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1436 , C09K3/1463 , H01L21/31053
摘要： The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.
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