公开(公告)号：US20080169752A1

公开(公告)日：2008-07-17

申请号：US11857233

申请日：2007-09-18

申请人： Yasushi HATTORI ,  Shinji SAITO ,  Sinya NUNOUE ,  Genichi HATAKOSHI ,  Koichi TACHIBANA ,  Naomi SHIDA ,  Iwao MITSUISHI

发明人： Yasushi HATTORI ,  Shinji SAITO ,  Sinya NUNOUE ,  Genichi HATAKOSHI ,  Koichi TACHIBANA ,  Naomi SHIDA ,  Iwao MITSUISHI

IPC分类号： H01L33/00 ,  F21V8/00

CPC分类号： H01L33/507 ,  H01L33/44 ,  H01L33/60 ,  H01L2224/45144 ,  H01L2224/48091 ,  Y10S362/80 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device includes a light emitting element emitting an excitation light and a fluorescent element. The fluorescent element includes a semi-translucent film facing the light emitting element, and transmits the excitation light; a first luminescent film including phosphors to absorb the excitation light transmitted through the semi-translucent film and to emit a visible light having a different wavelength than the excitation light; and a reflection film disposed on an opposite side of the first luminescent film on which the semi-translucent film is disposed, reflecting the excitation light transmitted through the first luminescent film towards the first luminescent film.

摘要翻译： 发光器件包括发射激发光的发光元件和荧光元件。 荧光元件包括面向发光元件的半透明膜，并透射激发光; 第一发光膜，包括用于吸收透过半透明膜的激发光并发射具有与激发光不同的波长的可见光的荧光体; 以及反射膜，其设置在配置有半透明膜的第一发光膜的相反侧，将透过第一发光膜的激发光朝向第一发光膜反射。

公开(公告)号：US20070253051A1

公开(公告)日：2007-11-01

申请号：US10572493

申请日：2004-09-17

申请人： Kunihiko Ishihara ,  Genichi Hatakoshi ,  Keishi Ohashi ,  Katsutaro Ichihara ,  Urara Ichihara

发明人： Kunihiko Ishihara ,  Genichi Hatakoshi ,  Keishi Ohashi ,  Katsutaro Ichihara ,  Urara Ichihara

IPC分类号： G02B26/08

CPC分类号： G03B21/56 ,  Y10T428/12694

摘要： A conductive thin film has first and second surfaces and at least one opening extending through from the first surface to the second surface. At least on one of the first and second surfaces, first and second periodic surface patterns having different period lengths are provided. The period length of the second periodic surface pattern is substantially equal to an odd integral multiple of a half of the period length of the first periodic surface pattern. With this, surface plasmon polaritons excited by the first periodic surface pattern undergo odd-order Bragg reflection by the second periodic surface pattern. As a result, the intensity of the light falling on the first surface and transmitted to the second surface through the opening is increased with high efficiency.

摘要翻译： 导电薄膜具有第一和第二表面以及从第一表面延伸到第二表面的至少一个开口。 至少在第一和第二表面中的一个上，提供具有不同周期长度的第一和第二周期性表面图案。 第二周期性表面图案的周期长度基本上等于第一周期性表面图案的周期长度的一半的奇数整数倍。 由此，由第一周期性表面图案激发的表面等离子体激元由第二周期性表面图案经历奇数阶布拉格反射。 结果，以高效率提高落在第一表面上并通过开口传递到第二表面的光的强度。

公开(公告)号：US20070228390A1

公开(公告)日：2007-10-04

申请号：US11668218

申请日：2007-01-29

申请人： Yasushi HATTORI ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Shinji Saito ,  Naomi Shida ,  Masahiro Yamamoto

发明人： Yasushi HATTORI ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Shinji Saito ,  Naomi Shida ,  Masahiro Yamamoto

IPC分类号： H01L33/00

CPC分类号： H01L33/505 ,  H01L25/0753 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00011 ,  H01L2924/01021 ,  H01L2924/01066 ,  H01L2924/09701 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/00012

摘要： A light-emitting device is provided, which includes a substrate having a plane surface, a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light, a first light transmissible layer formed above the substrate and covering the semiconductor light-emitting element, a phosphor layer formed above the first light transmissible layer and containing phosphor particles and matrix, and a second light transmissible layer formed above the phosphor layer and contacting with the plane surface of the substrate. The surface of the phosphor layer has projections reflecting shapes of the phosphor particles.

摘要翻译： 提供一种发光装置，其包括具有平面的基板，安装在基板的平面上的半导体发光元件，其发射从紫外线到可见光的范围内的光，第一透光层 形成在基板上并覆盖半导体发光元件，形成在第一透光层上方并含有荧光体粒子和基体的荧光体层，以及形成在荧光体层的上方并与基板的平面接触的第二透光层 。 荧光体层的表面具有反射荧光体颗粒的形状的突起。

公开(公告)号：US20060250022A1

公开(公告)日：2006-11-09

申请号：US11382209

申请日：2006-05-08

申请人： Tetsuya Hasegawa ,  Tooru Koyama ,  Genichi Hatakoshi

发明人： Tetsuya Hasegawa ,  Tooru Koyama ,  Genichi Hatakoshi

IPC分类号： B60T8/24

CPC分类号： B60T8/1766 ,  B60T8/261 ,  B60T8/3225

摘要： A brake control system includes at least a pair of brake systems respectively connected to a pair of brake operating members L1, L2, and a control unit 10 for controlling the brake forces of the pair of brake systems interlockingly according to a predetermined distribution ratio by operating one of the pair of brake operating members L1, L2. The control unit 10 executes a decreasing control on the brake forces in such a manner that, when releasing the pair of brake operating members L1, L2, the control unit 10 decreases both of the brake forces together, even in a state where the control unit performs the interlocking control so as to decrease the brake force of one of the brake system as the brake force of the other of the brake system is increased in accordance with the predetermined distribution ratio.

摘要翻译： 制动控制系统包括至少一对制动系统，分别连接到一对制动操作构件L 1，L 2和控制单元10，用于根据预定的分配比例互锁地控制该对制动系统的制动力 通过操作一对制动操作构件L 1，L 2中的一个。 控制单元10以这样的方式执行对制动力的减小的控制，即当释放一对制动操作构件L 1，L 2时，控制单元10将两个制动力降低在一起，即使在 控制单元执行联锁控制，以便随着制动系统中另一个制动系统的制动力根据预定的分配比而增加制动系统中的一个的制动力。

公开(公告)号：US07042810B2

公开(公告)日：2006-05-09

申请号：US09772894

申请日：2001-01-31

申请人： Junichi Akiyama ,  Katsutaro Ichihara ,  Genichi Hatakoshi

发明人： Junichi Akiyama ,  Katsutaro Ichihara ,  Genichi Hatakoshi

IPC分类号： G11B11/105 ,  G11B15/64 ,  G11B5/02

CPC分类号： B82Y10/00 ,  G11B5/314 ,  G11B5/6088 ,  G11B2005/0021

摘要： A thermally-assisted magnetic recording head and a magnetic recording apparatus having the magnetic recording head built in are disclosed. The magnetic recording head is capable of recording magnetic information by heating a recording unit of a recording medium and raising its temperature to reduce magnetic coercive force and then applying recording magnetic field to the recording unit having the reduced coercive force. The magnetic recording head has a light absorbing film having an aperture, a laser device emitting and directing light through the aperture to the recording medium to head the recording unit and raise its temperature, and a recording magnetic pole for applying the recording magnetic field to the recording unit. In the aperture, an aperture width W1 is along a polarizing direction of the light emitted from the laser device while an aperture width W2 is approximately perpendicular to the polarizing direction of the aperture width W1, and the aperture width W1 is shorter than the aperture width W2. The heating source such as a laser device recedes from the medium to provide a unique configuration where a tip of the recording magnetic pole protrudes ahead of the heating source, and hence, heating beam and the recording magnetic pole can be located close to each other without losing sufficient energy density to heat the medium.

摘要翻译： 公开了一种热辅助磁记录头和内置磁记录头的磁记录装置。 磁记录头能够通过加热记录介质的记录单元并提高其温度来降低磁矫顽力，然后将记录磁场施加到具有降低的矫顽力的记录单元上来记录磁信息。 磁记录头具有具有孔的光吸收膜，激光装置发射并引导光通过孔到达记录介质以使记录单元顶起并升高其温度;以及记录磁极，用于将记录磁场施加到 录音单元 在孔径中，孔径宽度W1沿着从激光装置发出的光的偏振方向，而孔径宽度W2大致垂直于孔径宽度W1的偏振方向，并且孔径宽度W1短于孔径宽度 W2。 诸如激光装置的加热源从介质中退出以提供独特的配置，其中记录磁极的尖端在加热源的前方突出，因此，加热束和记录磁极可以彼此靠近而没有 失去足够的能量密度来加热介质。

公开(公告)号：US06252894B1

公开(公告)日：2001-06-26

申请号：US09263213

申请日：1999-03-05

申请人： Katsunobu Sasanuma ,  Shinji Saito ,  Genichi Hatakoshi ,  Kazuhiko Itaya ,  Masaaki Onomura ,  Risa Sugiura ,  Mikio Nakasuji ,  Hidetoshi Fujimoto ,  Masahiro Yamamoto ,  Shinya Nunoue

发明人： Katsunobu Sasanuma ,  Shinji Saito ,  Genichi Hatakoshi ,  Kazuhiko Itaya ,  Masaaki Onomura ,  Risa Sugiura ,  Mikio Nakasuji ,  Hidetoshi Fujimoto ,  Masahiro Yamamoto ,  Shinya Nunoue

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/0655 ,  H01S5/2004 ,  H01S5/205 ,  H01S5/2219 ,  H01S5/222 ,  H01S5/2231 ,  H01S2301/18

摘要： A semiconductor laser is formed of gallium nitride series compound semiconductor and has a double hetero structure including an MQW (multiple quantum well) active layer held between p-type and n-type AlGaN clad layers. The double hetero structure is held between p-type and n-type contact layers. An InGaN optical absorption layer having an optical absorption coefficient larger than the clad layer which has the same conductivity type as the contact layer and is formed adjacent to the contact layer is formed in at least one of the contact layers and an InAlGaN optical guided mode control layer (layer of small refractive index) having an refractive index smaller than the clad layer is formed on the exterior of the optical absorption layer.

摘要翻译： 半导体激光器由氮化镓系化合物半导体形成，具有包含保持在p型和n型AlGaN覆盖层之间的MQW（多量子阱）有源层的双异质结构。 双异质结构保持在p型和n型接触层之间。 在至少一个接触层和InAlGaN光学引导模式控制中形成具有大于具有与接触层相同的导电类型并且与接触层相邻的覆盖层的光吸收系数的InGaN光吸收层 在光吸收层的外部形成折射率小于包层的层（小折射率层）。

公开(公告)号：US6118801A

公开(公告)日：2000-09-12

申请号：US373624

申请日：1999-08-13

申请人： Masayuki Ishikawa ,  Masahiro Yamamoto ,  Shinya Nunoue ,  Johji Nishio ,  Genichi Hatakoshi ,  Hidetoshi Fujimoto

发明人： Masayuki Ishikawa ,  Masahiro Yamamoto ,  Shinya Nunoue ,  Johji Nishio ,  Genichi Hatakoshi ,  Hidetoshi Fujimoto

IPC分类号： H01S5/02 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2202 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04 ,  H01S5/0213 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/2227 ,  H01S5/2232 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/3213

摘要： A gallium nitride-based compound semiconductor laser has a double-heterojunction structure, in which an active layer is sandwiched between cladding layers, on a sapphire substrate. A GaN current blocking layer having a striped opening portion is formed on the p-cladding layer. A p-GaN buried layer and a contact layer through which a current is injected into the opening portion of the current blocking layer and which are larger in area than the opening portion are formed. The active layer has a multiple quantum well structure constituted by a cyclic structure formed by cyclically stacking two types of InGaAlN layers which have different band gaps and are 10 nm or more thick.

摘要翻译： 氮化镓系化合物半导体激光器在蓝宝石衬底上具有双层异质结结构，其中有源层夹在包层之间。 在p-包层上形成具有条纹开口部分的GaN电流阻挡层。 形成p-GaN掩埋层和电流注入到电流阻挡层的开口部分并且面积大于开口部分的接触层。 有源层具有通过循环堆叠具有不同带隙并且为10nm以上厚度的两种类型的InGaAlN层形成的循环结构构成的多量子阱结构。

公开(公告)号：US5780873A

公开(公告)日：1998-07-14

申请号：US689689

申请日：1996-08-13

申请人： Kazuhiko Itaya ,  Masahiro Yamamoto ,  Masaaki Onomura ,  Hidetoshi Fujimoto ,  Genichi Hatakoshi ,  Hideto Sugawara ,  Masayuki Ishikawa ,  John Rennie ,  Shinji Saito

发明人： Kazuhiko Itaya ,  Masahiro Yamamoto ,  Masaaki Onomura ,  Hidetoshi Fujimoto ,  Genichi Hatakoshi ,  Hideto Sugawara ,  Masayuki Ishikawa ,  John Rennie ,  Shinji Saito

IPC分类号： H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01L33/00 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/0215 ,  H01S5/34333 ,  H01S5/0202 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/3202 ,  H01S5/32391 ,  H01S5/34326 ,  H01S5/4043 ,  H01S5/4087

摘要： A semiconductor light-emitting device comprises a semiconductor light-emitting device section of a hexagonal type; and an electrically conductive semiconductor substrate of a cubic type combined into the semiconductor light-emitting device, and having an orientation of its cleavage facet conformed to an orientation of the cleavage facet of one of semiconductor layers forming the semiconductor light-emitting device section. The substrate of the cubic type is cleaved so that the semiconductor light-emitting device section of the hexagonal type is induced to be cleaved, and that a mirror surface can be easily formed.

摘要翻译： 半导体发光器件包括六边形的半导体发光器件部分; 以及组合到半导体发光器件中的立方体的导电半导体衬底，并且其解理面的取向符合形成半导体发光器件部分的半导体层之一的解理面的取向。 立方体的基板被切割，使得六方型的半导体发光器件部分被诱导被切割，并且可以容易地形成镜面。

公开(公告)号：US5585649A

公开(公告)日：1996-12-17

申请号：US404287

申请日：1995-03-14

申请人： Masayuki Ishikawa ,  Yukie Nishikawa ,  Masaaki Onomura ,  Shinji Saito ,  Peter J. Parbrook ,  Genichi Hatakoshi

发明人： Masayuki Ishikawa ,  Yukie Nishikawa ,  Masaaki Onomura ,  Shinji Saito ,  Peter J. Parbrook ,  Genichi Hatakoshi

IPC分类号： H01L29/43 ,  H01L21/28 ,  H01L33/06 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/327 ,  H01L33/00

CPC分类号： H01S5/327 ,  H01L33/145 ,  H01L33/28 ,  H01L33/32 ,  H01L33/40 ,  H01S5/2211 ,  H01S5/2231

摘要： A compound semiconductor device with an improved internal current blocking structure. The semiconductor device includes an n-clad layer of II-VI compound semiconductor, a p-clad layer of II-VI compound semiconductor, an active layer of II-VI compound semiconductor between the n-clad and p-clad layers, a very thin current blocking layer of n-type II-VI compound semiconductor on the p-clad layer and providing an opening, a p-contact layer of p-type II-VI compound semiconductor on the p-clad layer and the current blocking layer at the opening, and a p-side electrode on the p-contact layer.

摘要翻译： 具有改善的内部电流阻挡结构的化合物半导体器件。 该半导体器件包括II-VI族化合物半导体的n覆盖层，II-VI族化合物半导体的p覆盖层，n型覆层和p型覆层之间的II-VI族化合物半导体的有源层， 在p覆盖层上提供n型II-VI族化合物半导体的薄电流阻挡层，并且在p覆盖层上提供开口，p型II-VI化合物半导体的p接触层和当前阻挡层 开口和p接触层上的p侧电极。

公开(公告)号：US5377291A

公开(公告)日：1994-12-27

申请号：US451234

申请日：1989-12-15

申请人： Genichi Hatakoshi ,  Masaki Okajima ,  Kazutaka Terashima ,  Yutaka Uematsu

发明人： Genichi Hatakoshi ,  Masaki Okajima ,  Kazutaka Terashima ,  Yutaka Uematsu

IPC分类号： G02B6/124 ,  G02B6/32 ,  G02B6/34 ,  G02B27/44 ,  G02F1/37 ,  G02F1/377 ,  G02F1/383

CPC分类号： G02F1/377 ,  G02B27/4233 ,  G02B6/124 ,  G02B6/32 ,  G02B6/34 ,  G02B27/0944 ,  G02F1/383 ,  G02F2001/372 ,  G02F2001/374

摘要： A wavelength converting optical device includes an optical waveguide which has a waveguide portion and a cladding portion, at least one of which is formed of a nonlinear optical material. A fundamental wave, incident on the waveguide portion from an input end face of the waveguide, is converted into an optical second harmonic wave by Cerenkov radiation and is radiated into the cladding portion. The radiated second harmonic wave is output from an output end face of the waveguide. A reflecting film is provided on the emerging end face of the waveguide. The reflecting film includes a high reflectivity with respect to the fundamental wave of a guide mode and a low reflectivity with respect to the optical second harmonic wave. A wave front converting element is arranged to oppose the reflecting film. The converting element has a diffraction grating for converting the second harmonic wave, emerging from the output end face of the waveguide, into a plane wave.