公开(公告)号：US20100090242A1

公开(公告)日：2010-04-15

申请号：US12637637

申请日：2009-12-14

申请人： Hyun Kyong CHO ,  Sun Kyung KIM ,  Jun Ho JANG

发明人： Hyun Kyong CHO ,  Sun Kyung KIM ,  Jun Ho JANG

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0083 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

公开(公告)号：US20080142809A1

公开(公告)日：2008-06-19

申请号：US11702679

申请日：2007-02-06

申请人： Jun Ho Jang ,  Hyun Jae Lee

发明人： Jun Ho Jang ,  Hyun Jae Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/62 ,  H01L2224/24

摘要： A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of damping impact generated during a substrate separation process and achieving an improvement in mass productivity, are disclosed. The light emitting device includes a semiconductor layer having a multilayer structure, a first electrode arranged at one surface of the semiconductor layer, a metal support arranged on the first electrode, and an impact damping layer arranged between the first electrode and the metal support, and made of a metal having a ductility higher than a ductility of a metal for the metal support.

摘要翻译： 公开了具有垂直结构的发光器件及其制造方法，其能够抑制在衬底分离过程中产生的冲击并实现批量生产率的提高。 发光器件包括具有多层结构的半导体层，布置在半导体层的一个表面的第一电极，布置在第一电极上的金属支撑体和布置在第一电极和金属支撑体之间的冲击阻尼层，以及 由具有高于用于金属支撑件的金属的延展性的延展性的金属制成。

公开(公告)号：US20080093705A1

公开(公告)日：2008-04-24

申请号：US11843777

申请日：2007-08-23

申请人： Kwang-kyu BANG ,  Jun-ho JANG ,  Yoo-mi LEE

发明人： Kwang-kyu BANG ,  Jun-ho JANG ,  Yoo-mi LEE

IPC分类号： H01L29/00 ,  H01L21/44

CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having a fuse structure that can prevent a bridge between a fuse pattern and a guard ring, and a method of fabricating the same are provided. The fuse pattern formed on a multiple-layered metal interconnect layer is stepped shape increasing a vertical distance between the fuse pattern and the guard ring.

摘要翻译： 具有可以防止熔丝图案和保护环之间的桥接的熔丝结构的半导体器件及其制造方法。 形成在多层金属互连层上的熔丝图形是增加熔丝图案和保护环之间的垂直距离的阶梯形状。

公开(公告)号：US20070295952A1

公开(公告)日：2007-12-27

申请号：US11708133

申请日：2007-02-20

申请人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

发明人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0083

摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

摘要翻译： 具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。 该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

公开(公告)号：US07109048B2

公开(公告)日：2006-09-19

申请号：US10950470

申请日：2004-09-28

申请人： Jun-Seok Ha ,  Jun-Ho Jang ,  Jae-Wan Choi ,  Jung-Hoon Seo

发明人： Jun-Seok Ha ,  Jun-Ho Jang ,  Jae-Wan Choi ,  Jung-Hoon Seo

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  H01L33/387

摘要： A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode.

摘要翻译： 一种半导体发光器件及其制造方法，包括：提供衬底; 在基板上形成n型半导体层，发光层，p型半导体层; 在p型半导体层上形成每一个区域上具有孔的第一透明电极; 以及在所述第一透明电极上形成第一焊盘。

公开(公告)号：US06395573B1

公开(公告)日：2002-05-28

申请号：US09626800

申请日：2000-07-26

申请人： Jun Ho Jang ,  Kang Hyun Sung

发明人： Jun Ho Jang ,  Kang Hyun Sung

IPC分类号： H01L2100

CPC分类号： H01L33/0062 ,  H01S5/2081 ,  H01S5/2086 ,  H01S5/2206 ,  H01S5/2219 ,  H01S5/2275 ,  H01S5/32325

摘要： Provided with a laser diode and its fabricating method including the steps of: sequentially forming a first conductivity type clad layer, an active layer, a second conductivity type first clad layer, an etch stop layer, a second conductivity type second clad layer, a second conductivity type InGaP layer, and a second conductivity type GaAs layer, on a first conductivity type substrate; forming an insulating layer on the second conductivity type GaAs layer and patterning it, exposing a defined region of the second conductivity type GaAs layer; performing a reactive ion etching using the patterned insulating layer as a mask, etching the second conductivity type GaAs layer, the second conductivity type InGaP layer, and the second conductivity type second clad layer to a specified depth and remaining part of the second conductivity type second clad layer; forming a photoresist on the whole surface including the insulating layer and patterning it, exposing the residual second conductivity type second clad layer; performing a wet etching using the patterned photoresist as a mask to etch the second conductivity type second clad layer, exposing the etch stop layer and etching the residual photoresist and insulating layer; forming a current blocking layer on the exposed etch stop layer, and a second conductivity type contact layer on the whole surface including the current blocking layer; and forming electrodes on the second conductivity type contact layer and beneath the substrate, respectively.

摘要翻译： 提供一种激光二极管及其制造方法，包括以下步骤：顺序形成第一导电型覆盖层，有源层，第二导电型第一覆盖层，蚀刻停止层，第二导电型第二覆盖层，第二导电型 导电型InGaP层和第二导电型GaAs层，在第一导电型基板上; 在所述第二导电型GaAs层上形成绝缘层并对其进行构图，暴露所述第二导电类型GaAs层的限定区域; 使用图案化绝缘层作为掩模进行反应离子蚀刻，将第二导电型GaAs层，第二导电型InGaP层和第二导电型第二覆盖层蚀刻到指定深度并将第二导电类型第二次的剩余部分 包层 在包括绝缘层的整个表面上形成光致抗蚀剂并对其进行图案化，暴露残留的第二导电类型的第二覆盖层; 使用图案化的光致抗蚀剂作为掩模进行湿蚀刻以蚀刻第二导电类型的第二包层，暴露蚀刻停止层并蚀刻残留的光致抗蚀剂和绝缘层; 在暴露的蚀刻停止层上形成电流阻挡层，在包括电流阻挡层的整个表面上形成第二导电型接触层; 以及在第二导电型接触层上和在基底之下分别形成电极。

公开(公告)号：US6130401A

公开(公告)日：2000-10-10

申请号：US358768

申请日：1999-07-22

申请人： Tae Kyung Yoo ,  Jun Ho Jang

发明人： Tae Kyung Yoo ,  Jun Ho Jang

IPC分类号： B28D5/00 ,  B23K26/00 ,  B23K26/18 ,  B23K26/40 ,  C03B33/09 ,  C03C23/00 ,  H01L21/301

CPC分类号： C03C23/002 ,  B23K26/082 ,  B23K26/18 ,  B23K26/364 ,  C03B33/091 ,  Y02P40/57

摘要： Transparent media having high hardness and poor light absorption is cut or scribed with characters or figures by a laser beam. The method includes forming a support of a medium which is a good absorber of a laser beam, and placing the transparent medium on the support, and focusing the laser beam onto the support through the transparent medium while the transparent medium and the laser beam are moved relative to each other. A flame is generated between the support and the transparent medium to machine the transport medium, allowing it to be cut or scribed with characters or figures.

摘要翻译： 通过激光束切割或刻划具有高硬度和差的光吸收性的透明介质。 该方法包括形成作为激光束的良好吸收体的介质的支撑体，并且将透明介质放置在支撑体上，并且通过透明介质将激光束聚焦到支撑体上，同时使透明介质和激光束移动 相对于彼此。 在支撑件和透明介质之间产生火焰以加工输送介质，允许其用字符或图形切割或刻划。

公开(公告)号：US08911160B2

公开(公告)日：2014-12-16

申请号：US11526686

申请日：2006-09-26

申请人： Jung Hoon Seo ,  Jun Ho Jang

发明人： Jung Hoon Seo ,  Jun Ho Jang

IPC分类号： G02B6/36 ,  G02B6/34 ,  G02B6/32 ,  G02B6/12 ,  G02B3/00 ,  G02B7/02 ,  G02F1/1335 ,  H01L33/54 ,  H01L33/58 ,  H01L33/56

CPC分类号： G02F1/133606 ,  F21K9/60 ,  F21V5/007 ,  F21V5/048 ,  F21V13/02 ,  F21Y2105/10 ,  F21Y2115/10 ,  G02F1/133603 ,  G02F1/133611 ,  G02F2001/133607 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00014 ,  H01L2924/00012

摘要： An light emitting device package and a backlight unit using the same are disclosed, wherein light advancing upward from the light emitting device package can be refracted by a lens to enable the light having a uniform intensity to be emitted upwards to the advantage of efficiency and power consumption, even with a small number of light emitting devices.

摘要翻译： 公开了一种发光器件封装和使用该发光器件封装的背光单元，其中从发光器件封装向上行进的光可被透镜折射，以使具有均匀强度的光能够向上发射以提高效率和功率 消耗，即使是少量的发光设备。

公开(公告)号：US20140112070A1

公开(公告)日：2014-04-24

申请号：US14139175

申请日：2013-12-23

申请人： Jun-Ho Jang ,  In-Hwan Choi ,  Woon-Jae Chung ,  Song-Ho Yoon ,  Kyung-Wook Ye

发明人： Jun-Ho Jang ,  In-Hwan Choi ,  Woon-Jae Chung ,  Song-Ho Yoon ,  Kyung-Wook Ye

IPC分类号： G11C16/10

CPC分类号： G11C16/10 ,  G06F11/1068 ,  G06F12/0246 ,  G06F2212/7208 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/26 ,  G11C29/52

摘要： Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

摘要翻译： 公开了一种存储系统和一种编程多位闪存设备的方法，该多位闪存设备包括被配置为存储多位数据的存储器单元，其中该方法包括并且该系统被配置用于确定要存储在所选存储器单元中的数据 是一个LSB​​数据; 并且如果要存储在所选择的存储单元中的数据不是LSB数据，则将存储在所选存储单元中的较低数据备份到多位闪存器件的备份存储器块。

公开(公告)号：US08624288B2

公开(公告)日：2014-01-07

申请号：US13219356

申请日：2011-08-26

申请人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

发明人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

IPC分类号： H01L33/36 ,  H01L33/44

CPC分类号： H01L33/405 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0083

摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

摘要翻译： 具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。 该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。