公开(公告)号：US20130168833A1

公开(公告)日：2013-07-04

申请号：US13776446

申请日：2013-02-25

Applicant: Hitoshi Sato ,  John F. Kaeding ,  Michael Iza ,  Benjamin A. Haskell ,  Troy J. Baker ,  Steven P. DenBaars ,  Shuji Nakamura

Inventor： Hitoshi Sato ,  John F. Kaeding ,  Michael Iza ,  Benjamin A. Haskell ,  Troy J. Baker ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/04 ,  H01L21/02

CPC classification number: H01L29/045 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02365 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262

Abstract: A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

Abstract translation: 通过使用含有至少一些铟的（Al，In，Ga）N成核层，通过金属有机化学气相沉积（MOCVD）增强器件质量的平面半极性半导体薄膜的生长的方法。 具体地，该方法包括将衬底装载到反应器中，在氮气和/或氢气和/或氨气流下加热衬底，在加热衬底上沉积In x Ga 1-x N成核层，在半导体衬底上沉积半极性氮化物半导体薄膜 In x Ga 1-x N成核层，并在氮气过压下冷却该衬底。

公开(公告)号：US20120205625A1

公开(公告)日：2012-08-16

申请号：US13454321

申请日：2012-04-24

Applicant: Michael Iza ,  Hitoshi Sato ,  Eu Jin Hwang ,  Steven P. DenBaars ,  Shuji Nakamura

Inventor： Michael Iza ,  Hitoshi Sato ,  Eu Jin Hwang ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/205 ,  H01L21/20

CPC classification number: H01L33/04 ,  H01L33/12 ,  H01L33/32

Abstract: A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN where 0

Abstract translation: 在图案化衬底上的氮化物发光二极管，包括具有In x Ga 1-x N和In y Ga 1-y N的交替层的至少两个周期的氮化物中间层，其中0

公开(公告)号：US08227819B2

公开(公告)日：2012-07-24

申请号：US13250558

申请日：2011-09-30

Applicant: Hong Zhong ,  Anurag Tyagi ,  James Stephen Speck ,  Steven P. Denbaars ,  Shuji Nakamura

Inventor： Hong Zhong ,  Anurag Tyagi ,  James Stephen Speck ,  Steven P. Denbaars ,  Shuji Nakamura

IPC: H01L33/00

CPC classification number: H01L33/18 ,  H01L33/02

Abstract: A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.

Abstract translation: 具有厚度为100nm以下的p型层的发光二极管（LED），位于p型层和n型层之间的n型层和有源层，用于发光 ，其中LED不包括单独的电子阻挡层。

公开(公告)号：US20120175739A1

公开(公告)日：2012-07-12

申请号：US13427590

申请日：2012-03-22

Applicant: Asako HIRAI ,  Zhongyuan JIA ,  Makoto SAITO ,  Hisashi YAMADA ,  Kenji ISO ,  Steven P. DENBAARS ,  Shuji NAKAMURA ,  James S. SPECK

Inventor： Asako HIRAI ,  Zhongyuan JIA ,  Makoto SAITO ,  Hisashi YAMADA ,  Kenji ISO ,  Steven P. DENBAARS ,  Shuji NAKAMURA ,  James S. SPECK

IPC: H01L29/20 ,  H01L21/20

CPC classification number: C30B29/406 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/26 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333 ,  Y10T428/24612

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an α-axis direction comprising a 0.15° or greater miscut angle towards the α-axis direction and a less than 30° miscut angle towards the α-axis direction.

Abstract translation: 提供了为了抑制表面波动而在衬底的错误角度上生长的非极性III族氮化物膜。 膜的表面形态通过朝向朝向α轴方向具有0.15°以上的误差角和朝向α轴方向的小于30°的倾斜角度的朝向α轴方向的误差角度而改善。

公开(公告)号：US20120138986A1

公开(公告)日：2012-06-07

申请号：US13284001

申请日：2011-10-28

Applicant: ROY B. CHUNG ,  HUNG TSE CHEN ,  CHIH-CHIEN PAN ,  JAMES S. SPECK ,  STEVEN P. DENBAARS ,  SHUJI NAKAMURA

Inventor： ROY B. CHUNG ,  HUNG TSE CHEN ,  CHIH-CHIEN PAN ,  JAMES S. SPECK ,  STEVEN P. DENBAARS ,  SHUJI NAKAMURA

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L29/452 ,  H01L33/32 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

Abstract: A method of fabricating an (Al, In, Ga)N based optoelectronic device, comprising forming an n-type ohmic contact on an (Al, In, Ga)N surface of the device, wherein the surface comprises an Nitrogen face (N-face) and a N-rich face of the (Al, In, Ga)N, the n-type contact is on the N-face and the N-rich face, and the current spreading of the n-type ohmic contact is enhanced by a combination of a lower and a higher contact resistance on the surface.

Abstract translation: 一种制造（Al，In，Ga）N基光电子器件的方法，包括在器件的（Al，In，Ga）N表面上形成n型欧姆接触，其中所述表面包括氮面（N- 面）和（Al，In，Ga）N的富N面，n面接触在N面和富N面上，并且n型欧姆接触的电流扩展增强 通过表面上的较低和较高的接触电阻的组合。

公开(公告)号：US20120138891A1

公开(公告)日：2012-06-07

申请号：US13282794

申请日：2011-10-27

Applicant: Roy B. Chung ,  Changseok Han ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

Inventor： Roy B. Chung ,  Changseok Han ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L33/04

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: A method for reduction of efficiency droop using an (Al, In, Ga)N/AlxIn1-xN superlattice electron blocking layer (SL-EBL) in nitride based light emitting diodes.

Abstract translation: 在氮化物基发光二极管中使用（Al，In，Ga）N / Al x In 1-x N超晶格电子阻挡层（SL-EBL）降低效率下降的方法。

公开(公告)号：US08193079B2

公开(公告)日：2012-06-05

申请号：US11673426

申请日：2007-02-09

Applicant: John F. Kaeding ,  Hitoshi Sato ,  Michael Iza ,  Hirokuni Asamizu ,  Hong Zhong ,  Steven P. DenBaars ,  Shuji Nakamura

Inventor： John F. Kaeding ,  Hitoshi Sato ,  Michael Iza ,  Hirokuni Asamizu ,  Hong Zhong ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/04

CPC classification number: H01L21/2654 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/207

Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

Abstract translation: （Al，In，Ga，B）N半导体晶体中受控p型导电性的方法。 实例包括在{011}方向沉积在{100} MgAl 2 O 4尖晶石衬底miscut上的{10 11} GaN膜。 可以有意地将Mg原子并入生长的半极性氮化物薄膜中以在半导体晶体的带结构中引入可用的电子态，导致p型导电性。 也可以使用导致类似的合适电子状态引入的其它杂质原子，例如Zn或C。

公开(公告)号：US20120126198A1

公开(公告)日：2012-05-24

申请号：US13283193

申请日：2011-10-27

Applicant: Shuji Nakamura ,  Steven P. DenBaars ,  Shinichi Tanaka ,  Junichi Sonoda ,  Hung Tse Chen ,  Chih-Chien Pan

Inventor： Shuji Nakamura ,  Steven P. DenBaars ,  Shinichi Tanaka ,  Junichi Sonoda ,  Hung Tse Chen ,  Chih-Chien Pan

IPC: H01L33/04

CPC classification number: H01L33/06 ,  H01L33/007 ,  H01L33/04 ,  H01L33/20

Abstract: A light emitting diode (LED) device structure with a reduced Droop effect, and a method for fabricating the LED device structure. The LED is a III-nitride-based LED having an active layer or emitting layer comprised of a multi-quantum-well (MQW) structure, wherein there are eight or more quantum wells (QWs) in the MQW structure, and more preferably, at least nine QWs in the MQW structure. Moreover, the QWs in the MQW structure are grown at temperatures different from barrier layers in the MQW structure, wherein the barrier layers in the MQW structure are grown a temperatures at least 40° C. higher than the QWs in the MQW structure.

Abstract translation: 具有降低的Droop效应的发光二极管（LED）器件结构以及制造LED器件结构的方法。 LED是具有由多量子阱（MQW）结构构成的有源层或发射层的III族氮化物基LED，其中在MQW结构中存在八个或更多个量子阱（QW），更优选地， MQW结构中至少有九个QW。 此外，MQW结构中的QWs在不同于MQW结构中的阻挡层的温度下生长，其中MQW结构中的阻挡层的生长比MQW结构中的QW高至少40℃。

公开(公告)号：US08148713B2

公开(公告)日：2012-04-03

申请号：US12419119

申请日：2009-04-06

Applicant: Hitoshi Sato ,  Hirohiko Hirasawa ,  Roy B. Chung ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

Inventor： Hitoshi Sato ,  Hirohiko Hirasawa ,  Roy B. Chung ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L29/06

CPC classification number: H01L33/32 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L33/02 ,  H01L33/08 ,  Y10S977/755

Abstract: A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.

公开(公告)号：US20120076165A1

公开(公告)日：2012-03-29

申请号：US13376315

申请日：2010-06-07

Applicant: Arpan Chakraborty ,  You-Da Lin ,  Shuji Nakamura ,  Steven P. Denbaars

Inventor： Arpan Chakraborty ,  You-Da Lin ,  Shuji Nakamura ,  Steven P. Denbaars

IPC: H01S5/323 ,  H01L21/30

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3211 ,  H01S5/3213

Abstract: A light emitting active region between a first cladding layer and a second cladding layer, wherein the first cladding layer has a lower refractive index than a refractive index of the second cladding layer, and the first cladding layer and the second cladding layer are III-nitride based.

Abstract translation: 在第一包层和第二包层之间的发光有源区，其中，所述第一包层的折射率低于所述第二包层的折射率，所述第一包层和所述第二包层为III族氮化物 基于。