公开(公告)号：US07098110B2

公开(公告)日：2006-08-29

申请号：US10352928

申请日：2003-01-29

申请人： Takashi Saiki

发明人： Takashi Saiki

IPC分类号： H01L21/336

CPC分类号： H01L29/6659 ,  H01L21/2652 ,  H01L21/28247 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823857 ,  H01L21/823864 ,  H01L29/6656

摘要： A silicon nitride film having a thickness of 3 nm or less is formed on the surfaces of a P-well and N-well, as well as on the upper and side surfaces of a gate electrode, in which the silicon nitride film can be formed, for example, by exposing the surface of the P-well and N-well, and the upper and side surfaces of the gate electrode to a nitrogen-gas-containing plasma using a magnetron RIE apparatus. Then, pocket layers, extension layers and source/drain layers are formed while leaving the silicon nitride film unremoved.

公开(公告)号：US20050275108A1

公开(公告)日：2005-12-15

申请号：US10973391

申请日：2004-10-27

申请人： Takashi Saiki ,  Katsuaki Okoshi ,  Yuka Hayami

发明人： Takashi Saiki ,  Katsuaki Okoshi ,  Yuka Hayami

IPC分类号： H01L21/768 ,  H01L23/31 ,  H01L29/76

CPC分类号： H01L21/768 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/3511 ,  H01L2924/00

摘要： The semiconductor device comprises a silicon wafer 10, a multilayer interconnection 12 buried in inter-layer insulation film formed on the upper surface of the silicon wafer 10, and a silicon nitride film 16b which is formed on the back surface of the silicon wafer 10 and is an insulation film having a tensile stress, relaxing a stress exerted to the silicon wafer 10 by the inter-layer insulation films in which the multilayer interconnection 12 is buried.

摘要翻译： 半导体器件包括硅晶片10，埋在形成在硅晶片10的上表面上的层间绝缘膜中的多层布线12和形成在硅晶片10的背面上的氮化硅膜16b 并且是具有拉伸应力的绝缘膜，通过其中埋设多层互连12的层间绝缘膜来缓和施加到硅晶片10的应力。

公开(公告)号：US20050095765A1

公开(公告)日：2005-05-05

申请号：US10800749

申请日：2004-03-16

申请人： Takashi Saiki ,  Hiroyuki Ohta ,  Hiroyuki Kanata

发明人： Takashi Saiki ,  Hiroyuki Ohta ,  Hiroyuki Kanata

IPC分类号： H01L21/265 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L21/337

CPC分类号： H01L29/6659 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/7833

摘要： An extension region is formed by ion implantation under masking by a gate electrode, and then a substance having a diffusion suppressive function over an impurity contained in a source-and-drain is implanted under masking by the gate electrode and a first sidewall spacer so as to form amorphous layers a semiconductor substrate within a surficial layer thereof and in alignment with the first sidewall spacer, to thereby form an amorphous diffusion suppressive region.

摘要翻译： 通过栅极电极掩蔽下的离子注入形成延伸区域，然后在栅极电极和第一侧壁间隔物的掩蔽下注入在源极和漏极中包含的杂质上具有扩散抑制功能的物质，以便 在其表面层内形成半导体衬底并与第一侧壁间隔物对齐，从而形成非晶扩散抑制区域。

公开(公告)号：US06833316B2

公开(公告)日：2004-12-21

申请号：US10278939

申请日：2002-10-24

申请人： Takashi Saiki ,  Akira Yamanoue

发明人： Takashi Saiki ,  Akira Yamanoue

IPC分类号： H01L214763

CPC分类号： H01L24/11 ,  H01L23/522 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00014 ,  H01L2924/013

摘要： A semiconductor device includes a semiconductor substrate including semiconductor elements and an underlie wiring layer, an underlie insulating layer covering the underlie wiring layer; via conductors filled in via holes extending through the underlie insulating layer and reaching the underlie wiring layer, an insulating stack layer formed on the underlie insulating layer, covering the via conductors, the insulating stack layer including a first and a second insulating layer having different etching characteristic, a pad groove formed through the insulating stack layer, defining a pad region in which the via conductors are exposed, the pad region including therein at least an etching enhancing remaining insulation layer pattern; and a pad conductor filled in the pad groove.

摘要翻译： 半导体器件包括：半导体衬底，包括半导体元件和底层布线层;覆盖基底布线层的底层绝缘层; 通孔导体，其填充穿过下层绝缘层并到达底层布线层的通孔中，形成在覆盖通孔导体的底层绝缘层上的绝缘堆叠层，绝缘堆叠层包括具有不同蚀刻的第一绝缘层和第二绝缘层 特征在于，形成穿过所述绝缘堆叠层的焊盘槽，限定其中所述通孔导体暴露的焊盘区域，所述焊盘区域至少包括蚀刻增强剩余绝缘层图案; 以及填充在焊盘槽中的焊盘导体。

公开(公告)号：US09008861B2

公开(公告)日：2015-04-14

申请号：US13343977

申请日：2012-01-05

申请人： Takashi Saiki ,  Ryusuke Ishikawa ,  Takeshi Kumazaki

发明人： Takashi Saiki ,  Ryusuke Ishikawa ,  Takeshi Kumazaki

IPC分类号： G05D1/00 ,  B60R25/20 ,  B60R25/00 ,  G07C9/00

CPC分类号： B60R25/2072 ,  B60R25/00 ,  G07C9/00309 ,  G07C2009/00365 ,  G07C2009/00388

摘要： A vehicle-side unit transmits a first request signal WAKE periodically toward a portable unit, and transmits a second request signal CHLG at every predetermined transmission interval specific to the vehicle-side unit upon reception of a first response signal ACK from the portable unit in response to the transmitted WAKE. The portable unit is operable with power supplied from a battery. The portable unit transmits ACK upon reception of WAKE and becomes ready for reception of CHLG at a timing CHLG is transmitted in accordance with the transmission interval specific to the vehicle-side unit.

摘要翻译： 车辆侧单元向便携式单元周期性地发送第一请求信号WAKE，并且在响应于来自便携式单元的第一响应信号ACK的接收时，以对于车辆单元特定的每个预定发送间隔发送第二请求信号CHLG 到发送的WAKE。 便携式单元可以用从电池供应的电力来操作。 便携式单元在接收到WAKE时发送ACK，并且在按照专用于车辆侧单元的传输间隔发送CHLG的定时准备好接收CHLG。

公开(公告)号：US08284071B2

公开(公告)日：2012-10-09

申请号：US12092155

申请日：2006-09-12

申请人： Pei-Yuan Peng ,  Jaime A. Rivera ,  Atsushi Yamada ,  Takashi Saiki

发明人： Pei-Yuan Peng ,  Jaime A. Rivera ,  Atsushi Yamada ,  Takashi Saiki

IPC分类号： G08B21/00

CPC分类号： B66B13/26

摘要： An assembly (20) for controlling movement of an automatically moveable door panel (22) includes a sensor (30, 32, 34) positioned on at least one of a door panel (22) or a door frame member (24, 26). The sensitive portion provides an indication of when an object is in contact with or in very close proximity to a sensitive portion. A sensitive portion is established over an area of the door or door frame member at which an object may become caught during automated door movement. A disclosed example includes using an electromechanical film as a sensor so that the sensitive portion is responsive to pressure applied by the object on the sensitive portion. Another disclosed example includes a field effect sensor that generates an electric field that is at least partially interrupted when an object contacts or comes in very close proximity to the sensitive portion. Automated movement of a door is controlled responsive to an indication of the presence of an object in a location where the object may become caught during automatic movement of the door.

摘要翻译： 用于控制可自动移动的门板（22）的运动的组件（20）包括定位在门板（22）或门框架构件（24,26）中的至少一个上的传感器（30,32,34）。 敏感部分提供对象何时与敏感部分接触或非常接近敏感部分的指示。 在门或门框构件的区域内建立敏感部分，在自动门移动期间物体可能被卡住。 所公开的示例包括使用机电膜作为传感器，使得敏感部分响应于物体在敏感部分上施加的压力。 另一个公开的示例包括场效应传感器，其产生当物体接触或非常接近敏感部分时至少部分中断的电场。 响应于在门的自动移动期间物体可能被卡住的位置处的物体的存在的指示来控制门的自动运动。

公开(公告)号：US07709939B2

公开(公告)日：2010-05-04

申请号：US10553076

申请日：2004-04-15

申请人： Naomi Yonemura ,  Katsunori Yashima ,  Yoshihiko Tsujimura ,  Hidenori Ishikura ,  Takashi Saiki

发明人： Naomi Yonemura ,  Katsunori Yashima ,  Yoshihiko Tsujimura ,  Hidenori Ishikura ,  Takashi Saiki

IPC分类号： H01L23/02

CPC分类号： H01L23/66 ,  H01L21/4857 ,  H01L23/142 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/49822 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05666 ,  H01L2224/45111 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/4516 ,  H01L2224/45166 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48472 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48666 ,  H01L2224/48711 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48766 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/4886 ,  H01L2224/48866 ,  H01L2224/4911 ,  H01L2224/85411 ,  H01L2224/85424 ,  H01L2224/85439 ,  H01L2224/85455 ,  H01L2224/8546 ,  H01L2224/85466 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01061 ,  H01L2924/01063 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/19051 ,  H01L2924/30105 ,  H05K1/0224 ,  H05K1/024 ,  H05K1/025 ,  H05K3/0061 ,  H05K2201/0187 ,  H05K2201/0209 ,  H05K2201/09745 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48811 ,  H01L2224/48824 ,  H01L2224/48744 ,  H01L2224/4876 ,  H01L2224/4866

摘要： A metal base circuit board to be used for a hybrid integrated circuit, including circuits provided on a metal plate via an insulating layer, a power semiconductor mounted on the circuit, and a control semiconductor to control the power semiconductor, provided on the circuit. A low capacitance portion is embedded under a circuit portion on which the control semiconductor is mounted, preferably. The low capacitance portion is made of a resin containing an inorganic filler and has a dielectric constant of from 2 to 9.

摘要翻译： 用于混合集成电路的金属基底电路板，包括经由绝缘层设置在金属板上的电路，安装在电路上的功率半导体以及控制半导体以控制电路上的功率半导体。 优选地，将低电容部分嵌入在其上安装有控制半导体的电路部分的下方。 低电容部由含有无机填料的树脂构成，介电常数为2〜9。

公开(公告)号：US07592243B2

公开(公告)日：2009-09-22

申请号：US11260464

申请日：2005-10-28

申请人： Youichi Momiyama ,  Kenichi Okabe ,  Takashi Saiki ,  Hidenobu Fukutome

发明人： Youichi Momiyama ,  Kenichi Okabe ,  Takashi Saiki ,  Hidenobu Fukutome

IPC分类号： H01L21/425

CPC分类号： H01L29/66492 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/6656 ,  H01L29/6659 ,  H04M15/8016 ,  H04M15/81 ,  H04M2215/0112 ,  H04M2215/2026 ,  H04M2215/22 ,  H04M2215/32 ,  H04M2215/7414 ,  H04W4/24

摘要： An impurity-diffused layer having an extension structure is formed first by implanting Sb ion as an impurity for forming a pocket region; then by implanting N as a diffusion-suppressive substance so as to produce two peaks in the vicinity of the interface with a gate electrode and at an amorphous/crystal interface which serves as an defect interface generated by the impurity in the pocket region; and by carrying out ion implantations for forming an extension region and deep source and drain regions.

摘要翻译： 首先通过注入Sb离子作为形成袋区域的杂质来形成具有延伸结构的杂质扩散层; 然后通过将N作为扩散抑制物质注入，以便在与栅电极的界面附近产生两个峰，以及在作为由口袋区域中的杂质产生的缺陷界面的非晶/晶界面处产生两个峰; 并且通过进行用于形成延伸区域和深源极和漏极区域的离子注入。

公开(公告)号：US07585739B2

公开(公告)日：2009-09-08

申请号：US11984737

申请日：2007-11-21

申请人： Takashi Saiki ,  Hiroyuki Ohta ,  Hiroyuki Kanata

发明人： Takashi Saiki ,  Hiroyuki Ohta ,  Hiroyuki Kanata

IPC分类号： H01L21/336

CPC分类号： H01L29/6659 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/7833

摘要： An extension region is formed by ion implantation under masking by a gate electrode, and then a substance having a diffusion suppressive function over an impurity contained in a source-and-drain is implanted under masking by the gate electrode and a first sidewall spacer so as to form amorphous layers a semiconductor substrate within a surficial layer thereof and in alignment with the first sidewall spacer, to thereby form an amorphous diffusion suppressive region.

摘要翻译： 通过栅极电极掩蔽下的离子注入形成延伸区域，然后在栅极电极和第一侧壁间隔物的掩蔽下注入在源极和漏极中包含的杂质上具有扩散抑制功能的物质，以便 在其表面层内形成半导体衬底并与第一侧壁间隔物对齐，从而形成非晶扩散抑制区域。

公开(公告)号：US20060046372A1

公开(公告)日：2006-03-02

申请号：US11260464

申请日：2005-10-28

申请人： Youichi Momiyama ,  Kenichi Okabe ,  Takashi Saiki ,  Hidenobu Fukutome

发明人： Youichi Momiyama ,  Kenichi Okabe ,  Takashi Saiki ,  Hidenobu Fukutome

IPC分类号： H01L21/8238

CPC分类号： H01L29/66492 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/6656 ,  H01L29/6659 ,  H04M15/8016 ,  H04M15/81 ,  H04M2215/0112 ,  H04M2215/2026 ,  H04M2215/22 ,  H04M2215/32 ,  H04M2215/7414 ,  H04W4/24

摘要： An impurity-diffused layer having an extension structure is formed first by implanting Sb ion as an impurity for forming a pocket region; then by implanting N as a diffusion-suppressive substance so as to produce two peaks in the vicinity of the interface with a gate electrode and at an amorphous/crystal interface which serves as an defect interface generated by the impurity in the pocket region; and by carrying out ion implantations for forming an extension region and deep source and drain regions.

摘要翻译： 首先通过注入Sb离子作为形成袋区域的杂质来形成具有延伸结构的杂质扩散层; 然后通过将N作为扩散抑制物质注入，以便在与栅电极的界面附近产生两个峰，以及在作为由口袋区域中的杂质产生的缺陷界面的非晶/晶界面处产生两个峰; 并且通过进行用于形成延伸区域和深源极和漏极区域的离子注入。