摘要:
Lifespan of LEDs can be lengthened, and the workability of the printed circuit board during circuit formation and during LED mounting can be improved.A metal base circuit board, having an insulating layer with a linear expansion coefficient of 60 ppm per degree C. or higher and 120 ppm per degree C. or lower, a metal foil provided on one side of the insulating layer, comprising a metal material with a linear expansion coefficient of 10 ppm per degree C. or higher and 35 ppm per degree C. or lower, a circuit portion and a non-circuit potion having a linear expansion coefficient of 10 ppm per degree C. or higher and 35 ppm per degree C. or lower, and a white film formed on top of the insulating layer, circuit portion, and non-circuit portion, the total sum of the areas of the non-circuit portion and the circuit portion on top of the insulating layer being 50% or higher and 95% or lower relative to the area of the metal foil, and the relation between the linear expansion coefficients of each of the materials being: linear expansion coefficient of insulating layer>linear expansion coefficient of metal foil>linear expansion coefficient of circuit portion and non-circuit portion.
摘要:
Four regions (a narrow NMOS region, a wide NMOS region, a wide PMOS region, and a narrow PMOS region) are defined on a semiconductor substrate. Then, after a gate insulating film and a polysilicon film are sequentially formed on the semiconductor substrate, n-type impurities are introduced into the polysilicon film in the wide NMOS region. Next, by patterning the polysilicon film, gate electrodes are formed in the four regions. Then, n-type impurities are introduced into the gate electrodes in the narrow NMOS region and the wide NMOS region. As a result, an impurity concentration of the gate electrode in the narrow NMOS region becomes lower than that of the gate electrode in the wide NMOS region.
摘要:
An assembly (20) for controlling movement of an automatically moveable door panel (22) includes a sensor (30, 32, 34) positioned on at least one of a door panel (22) or a door frame member (24, 26). The sensitive portion provides an indication of when an object is in contact with or in very close proximity to a sensitive portion. A sensitive portion is established over an area of the door or door frame member at which an object may become caught during automated door movement. A disclosed example includes using an electromechanical film as a sensor so that the sensitive portion is responsive to pressure applied by the object on the sensitive portion. Another disclosed example includes a field effect sensor that generates an electric field that is at least partially interrupted when an object contacts or comes in very close proximity to the sensitive portion. Automated movement of a door is controlled responsive to an indication of the presence of an object in a location where the object may become caught during automatic movement of the door.
摘要:
A metal base circuit board to be used for a hybrid integrated circuit, including circuits provided on a metal plate via an insulating layer, a power semiconductor mounted on the circuit, and a control semiconductor to control the power semiconductor, provided on the circuit. A low capacitance portion is embedded under a circuit portion on which the control semiconductor is mounted, preferably. The low capacitance portion is made of a resin containing an inorganic filler and has a dielectric constant of from 2 to 9.
摘要:
A silicon nitride film having a thickness of 3 nm or less is formed on the surfaces of a P-well and N-well, as well as on the upper and side surfaces of a gate electrode, in which the silicon nitride film can be formed, for example, by exposing the surface of the P-well and N-well, and the upper and side surfaces of the gate electrode to a nitrogen-gas-containing plasma using a magnetron RIE apparatus. Then, pocket layers, extension layers and source/drain layers are formed while leaving the silicon nitride film unremoved.
摘要:
A method of producing a semiconductor device is disclosed that is able to reduce fluctuations of a sheet resistance of a silicide layer in the semiconductor device formed by a salicide process. When depositing a titanium nitride film on a cobalt film in the salicide process, the thickness of the titanium nitride film is set to be sufficiently small so that a nano-grain structure or an amorphous structure is formed in the titanium nitride film. In the titanium nitride film, the titanium composition is enriched.
摘要:
A vehicle-side unit transmits a first request signal WAKE periodically toward a portable unit, and transmits a second request signal CHLG at every predetermined transmission interval specific to the vehicle-side unit upon reception of a first response signal ACK from the portable unit in response to the transmitted WAKE. The portable unit is operable with power supplied from a battery. The portable unit transmits ACK upon reception of WAKE and becomes ready for reception of CHLG at a timing CHLG is transmitted in accordance with the transmission interval specific to the vehicle-side unit.
摘要:
An assembly (20) for controlling movement of an automatically moveable door panel (22) includes a sensor (30, 32, 34) positioned on at least one of a door panel (22) or a door frame member (24, 26). The sensitive portion provides an indication of when an object is in contact with or in very close proximity to a sensitive portion. A sensitive portion is established over an area of the door or door frame member at which an object may become caught during automated door movement. A disclosed example includes using an electromechanical film as a sensor so that the sensitive portion is responsive to pressure applied by the object on the sensitive portion. Another disclosed example includes a field effect sensor that generates an electric field that is at least partially interrupted when an object contacts or comes in very close proximity to the sensitive portion. Automated movement of a door is controlled responsive to an indication of the presence of an object in a location where the object may become caught during automatic movement of the door.
摘要:
A metal base circuit board to be used for a hybrid integrated circuit, including circuits provided on a metal plate via an insulating layer, a power semiconductor mounted on the circuit, and a control semiconductor to control the power semiconductor, provided on the circuit. A low capacitance portion is embedded under a circuit portion on which the control semiconductor is mounted, preferably. The low capacitance portion is made of a resin containing an inorganic filler and has a dielectric constant of from 2 to 9.
摘要:
An impurity-diffused layer having an extension structure is formed first by implanting Sb ion as an impurity for forming a pocket region; then by implanting N as a diffusion-suppressive substance so as to produce two peaks in the vicinity of the interface with a gate electrode and at an amorphous/crystal interface which serves as an defect interface generated by the impurity in the pocket region; and by carrying out ion implantations for forming an extension region and deep source and drain regions.