Abstract:
A substrate support includes a disc body with upper and lower surfaces spaced apart by a thickness. The upper surface has a circular concavity extending about a rotation axis, an annular ledge portion radially outward of the concavity extending circumferentially about the concavity, and an annular rim portion radially outward of the ledge portion extending circumferentially about the ledge portion. The concavity has a circular perforated portion and an annular unperforated portion. The perforated portion extends about the rotation axis and defines two or more perforations to issue an etchant into a cavity defined between the concavity and a backside of a substrate seated on the substrate support. The unperforated portion is radially outward of the perforated portion and extends circumferentially about the perforated portion to limit etching of the backside of the substrate by the etchant. Semiconductor processing systems and material layer deposition methods are also described.
Abstract:
A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.
Abstract:
A reaction chamber assembly with a shutter system may be used in the processing of semiconductor substrates. The shutter system may facilitate gas flow control and temperature control within the reaction chamber assembly.
Abstract:
A shaft member includes a cylindrical body formed from a ceramic material and having a drive segment, a frustoconical segment, and an end key segment. The drive segment extends about a rotation axis, the frustoconical segment is offset from the drive segment along the rotation axis, and the end key segment extends axially from the frustoconical segment and is axially separated from the drive segment by the frustoconical segment of the shaft member. The end key segment has a first circumferential facet and a second circumferential facet circumferentially opposite the first circumferential facet to fix the shaft member in rotation about the rotation axis relative to a support member seated when the end key segment is slidably received within an end key socket defined within the support member. Process kits, semiconductor processing systems, and methods of making semiconductor processing systems are also described.
Abstract:
FIG. 1 is a front perspective view of a combined susceptor, support, and lift system; FIG. 2 is a back perspective view thereof; FIG. 3 is a side view thereof; FIG. 4 is a cross-sectional view taken along line 4-4 as indicated in FIG. 3; FIG. 5 is an enlarged view of FIG. 4 shown without broken line environmental subject matter for clarity of the claimed subject matter; FIG. 6 is a top perspective view of the lift pin thereof; FIG. 7 is a bottom perspective view of the lift pin thereof; FIG. 8 is a front view of the lift pin thereof; FIG. 9 is a back view of the lift pin thereof; FIG. 10 is a left view of the lift pin thereof; FIG. 11 is a right view of the lift pin thereof; FIG. 12 is a top view of the lift pin thereof; and, FIG. 13 is a bottom view of the lift pin thereof. The dash-dash broken lines within the shaded area and the dash-dash broken lines in FIGS. 1-13 depicting various components of the susceptor, support, and lift system are for the purpose of illustrating environmental subject matter and portions of the article that form no part of the claimed design. The dot-dash broken line in FIG. 3 is for the purpose of defining the cross-sectional view shown in FIG. 4.
Abstract:
Methods and systems for growing silicon carbide epitaxial layers are described. In one example, a reactor system with multiple reactor modules may include a heating load/lock chamber and a cooling load/lock chamber. In another example, a reactor may be heated by separate sets of coils inductively heating a susceptor, which heats graphite near one or more wafers. Multiple pyrometers may measure the temperature of the graphite walls at different locations. Based on temperature differences and/or temperature gradients, a temperature controller may adjust power provided to one or more sets of coils. In yet another example, separations between a wafer carrier and a wafer may be adjusted.
Abstract:
A substrate support includes a disc body with an upper surface and an opposite lower surface arranged along a rotation axis. The upper surface has a circular concave portion extending about the rotation axis, an annular ledge portion extending circumferentially about the concave portion, and an annular rim portion extending circumferentially about the ledge portion connecting to the concave portion of the disc body by the ledge portion of the disc body. The ledge portion slopes downward radially outward from the rotation axis to seat a substrate on the disc body such that a beveled edge of the substrate is cantilevered above the ledge portion of the upper surface of the disc body. Substrate support assemblies, semiconductor processing systems, and film deposition methods are also described.
Abstract:
A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.
Abstract:
A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.