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    Chemical Mechanical Polishing Apparatus and Methods
    13.
    发明申请
    Chemical Mechanical Polishing Apparatus and Methods 审中-公开

    公开(公告)号：US20200086452A1

    公开(公告)日：2020-03-19

    申请号：US16691581

    申请日：2019-11-21

    Applicant: Applied Materials, Inc.

    Inventor： Rajeev Bajaj ,  Thomas H. Osterheld ,  Hung Chen ,  Terrance Y. Lee

    IPC: B24B37/04 ,  B24B57/02 ,  H01L21/67 ,  H01L21/321 ,  H01L21/306

    Abstract: A substrate polishing apparatus is disclosed that includes a polishing platform having two or more zones, each zone adapted to receive a different slurry component. A substrate polishing system is provided having a holder to hold a substrate, a polishing platform having a polishing pad, and a distribution system adapted to dispense, in a timed sequence, at least two different slurry components selected from a group consisting of an oxidation slurry component, a material removal slurry component, and a corrosion inhibiting slurry component. Polishing methods and systems adapted to polish substrates are provided, as are numerous other aspects.

    ADVANCED POLISHING PAD MATERIALS AND FORMULATIONS
    14.
    发明申请
    ADVANCED POLISHING PAD MATERIALS AND FORMULATIONS 审中-公开
    高级抛光垫材料和配方

    公开(公告)号：US20160136787A1

    公开(公告)日：2016-05-19

    申请号：US15002384

    申请日：2016-01-20

    Applicant: Applied Materials, Inc.

    Inventor： Rajeev Bajaj ,  Daniel Redfield ,  Mahendra C. Orilall ,  Boyi Fu ,  Ashwin Chockalingam

    IPC: B24D11/00 ,  B24B37/24 ,  B24D3/28

    CPC classification number: B24D11/001 ,  B24B37/22 ,  B24B37/24 ,  B24B37/26 ,  B24D3/28 ,  B24D11/04 ,  B33Y10/00 ,  B33Y70/00 ,  B33Y80/00

    Abstract: Embodiments of the present disclosure relate to advanced polishing pads with tunable chemical, material and structural properties, and new methods of manufacturing the same. According to one or more embodiments of the disclosure, it has been discovered that a polishing pad with improved properties may be produced by an additive manufacturing process, such as a three-dimensional (3D) printing process. Embodiments of the present disclosure thus may provide an advanced polishing pad that has discrete features and geometries, formed from at least two different materials that include functional polymers, functional oligomers, reactive diluents, and curing agents. For example, the advanced polishing pad may be formed from a plurality of polymeric layers, by the automated sequential deposition of at least one resin precursor composition followed by at least one curing step, wherein each layer may represent at least one polymer composition, and/or regions of different compositions.

    Abstract translation: 本公开的实施例涉及具有可调节的化学，材料和结构特性的高级抛光垫及其制造方法。 根据本公开的一个或多个实施例，已经发现可以通过诸如三维（3D）印刷工艺的添加剂制造工艺来生产具有改进性能的抛光垫。 因此，本公开的实施例可以提供具有离散特征和几何形状的先进抛光垫，其由至少两种不同的材料形成，包括功能性聚合物，功能低聚物，反应性稀释剂和固化剂。 例如，先进的抛光垫可以由多个聚合物层形成，通过至少一种树脂前体组合物的自动顺序沉积，然后至少一个固化步骤，其中各层可代表至少一种聚合物组合物和/ 或不同组成的区域。

    CHEMICAL MECHANICAL POLISHING APPARATUS AND METHODS
    15.
    发明申请
    CHEMICAL MECHANICAL POLISHING APPARATUS AND METHODS 审中-公开
    化学机械抛光装置及方法

    公开(公告)号：US20160027668A1

    公开(公告)日：2016-01-28

    申请号：US14341762

    申请日：2014-07-25

    Applicant: Applied Materials, Inc.

    Inventor： Thomas H. Osterheld ,  Rajeev Bajaj

    IPC: H01L21/67 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/306

    CPC classification number: H01L21/30625 ,  B24B37/042 ,  B24B37/10 ,  B24B57/02 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/67075 ,  H01L21/67092

    Abstract: Embodiments of the invention provide a non-uniform substrate polishing apparatus that includes a polishing pad with two or more zones, each zone adapted to apply a different slurry chemistry to a different area on a substrate to create a film thickness profile on the substrate having at least two different film thicknesses. Polishing methods and systems adapted to polish substrates are also provided, as are numerous other aspects.

    Abstract translation: 本发明的实施例提供了一种不均匀的衬底抛光装置，其包括具有两个或更多个区域的抛光垫，每个区域适于将不同的浆料化学品施加到衬底上的不同区域上，以在衬底上形成膜厚分布， 最少两个不同的膜厚度。 还提供了适于抛光底物的抛光方法和系统，以及许多其它方面。

    APPARATUS AND METHODS FOR ACOUSTICAL MONITORING AND CONTROL OF THROUGH-SILICON-VIA REVEAL PROCESSING
    16.
    发明申请
    APPARATUS AND METHODS FOR ACOUSTICAL MONITORING AND CONTROL OF THROUGH-SILICON-VIA REVEAL PROCESSING 审中-公开
    通过硅橡胶渗透加工进行声学监测和控制的装置和方法

    公开(公告)号：US20140329439A1

    公开(公告)日：2014-11-06

    申请号：US13874495

    申请日：2013-05-01

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Xiong Yeu Chew ,  Kommisetti Subrahmanyam ,  Uday Mahajan ,  Bogdan Swedek ,  Rajeev Bajaj ,  Jianshe Tang

    IPC: B24B37/005

    CPC classification number: B24B37/0053

    Abstract: A TSV (through silicon via) reveal process using CMP (chemical mechanical polishing) may be acoustically monitored and controlled to detect TSV breakage and automatically respond thereto. Acoustic emissions received by one or more acoustic sensors positioned proximate a substrate holder and/or a polishing pad of a CMP system may be analyzed to detect TSV breakage during a CMP process. In response to detecting TSV breakage, one or more remedial actions may automatically occur. In some embodiments, a polishing pad platen may have one or more acoustic sensors integrated therein that extend into a polishing pad mounted on the polishing pad platen. Methods of monitoring and controlling a TSV reveal process are also provided, as are other aspects.

    Abstract translation: TSV（通过硅通孔）显示使用CMP（化学机械抛光）的方法可以被声学监测和控制，以检测TSV断裂并自动响应于此。 可以分析由位于CMP系统的衬底保持器和/或抛光垫附近的一个或多个声学传感器接收的声发射，以在CMP处理期间检测TSV断裂。 响应于检测到TSV断裂，可能会自动发生一个或多个补救措施。 在一些实施例中，抛光垫压板可以具有集成在其中的一个或多个声学传感器，其延伸到安装在抛光垫压板上的抛光垫中。 还提供了监测和控制TSV显示过程的方法，以及其他方面。

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