公开(公告)号：US20180240676A1

公开(公告)日：2018-08-23

申请号：US15959972

申请日：2018-04-23

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen ,  Jared Ahmad Lee ,  Kevin Griffin ,  Srinivas Gandikota ,  Joseph Yudovsky ,  Mandyam Sriram

IPC: H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/455 ,  H01L21/768 ,  H01L21/28 ,  C23C16/14

CPC classification number: H01L21/28562 ,  C23C16/06 ,  C23C16/14 ,  C23C16/452 ,  C23C16/45525 ,  C23C16/45534 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/4584 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/32051 ,  H01L21/76877

Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

公开(公告)号：US09978685B2

公开(公告)日：2018-05-22

申请号：US15381752

申请日：2016-12-16

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Kelvin Chan ,  Srinivas Gandikota

IPC: H01L21/28 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L31/18

CPC classification number: H01L23/53266 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76876 ,  H01L31/18

Abstract: Methods for depositing a metal film comprising forming an amorphous silicon layer as a nucleation layer and/or glue layer on a substrate. Some embodiments further comprise the incorporation of a glue layer to increase the ability of the amorphous silicon layer and metal layer to stick to the substrate.

公开(公告)号：US09741558B2

公开(公告)日：2017-08-22

申请号：US15364125

申请日：2016-11-29

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Kelvin Chan ,  Shaunak Mukherjee ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/768 ,  H01L23/532 ,  H01L21/033 ,  H01L21/3105 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/53228

Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.

公开(公告)号：US12228534B2

公开(公告)日：2025-02-18

申请号：US18604257

申请日：2024-03-13

Applicant: Applied Materials, Inc.

Inventor： Xiaopu Li ,  Kallol Bera ,  Yaoling Pan ,  Kelvin Chan ,  Amir Bayati ,  Philip Allan Kraus ,  Kenric T. Choi ,  William John Durand

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  G01N27/22 ,  G01N33/00 ,  H01L21/67

Abstract: Embodiments disclosed herein include gas concentration sensors, and methods of using such gas concentration sensors. In an embodiment, a gas concentration sensor comprises a first electrode. In an embodiment the first electrode comprises first fingers. In an embodiment, the gas concentration sensor further comprises a second electrode. In an embodiment, the second electrode comprises second fingers that are interdigitated with the first fingers.

公开(公告)号：US20230411130A1

公开(公告)日：2023-12-21

申请号：US17841557

申请日：2022-06-15

Applicant: Applied Materials, Inc.

Inventor： Abdullah Zafar ,  Kelvin Chan ,  Philip Allan Kraus

IPC: H01J37/32 ,  G01N21/35

CPC classification number: H01J37/3299 ,  H01J37/32357 ,  G01N21/27 ,  H01J2237/24585 ,  G01N21/35

Abstract: Embodiments disclosed herein include semiconductor processing tools. In an embodiment, the semiconductor processing tool comprises a plasma source, and a chamber coupled to the plasma source. In an embodiment, a pump is coupled to the chamber. In an embodiment, the semiconductor processing tool further comprises a sampling line. In an embodiment, the sampling line comprises a reaction chamber, and an absorption chamber.

公开(公告)号：US20230411129A1

公开(公告)日：2023-12-21

申请号：US17841561

申请日：2022-06-15

Applicant: Applied Materials, Inc.

Inventor： Abdullah Zafar ,  Kelvin Chan ,  Philip Allan Kraus

IPC: H01J37/32 ,  G01N21/27 ,  H01L21/67

CPC classification number: H01J37/32972 ,  H01J37/32357 ,  G01N21/27 ,  H01L21/67253 ,  H01J2237/2482

Abstract: Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a chamber, a pedestal in the chamber configured to secure a substrate, and a plasma source above the pedestal. In an embodiment, a laser source is coupled to the chamber, and a detector is coupled to the chamber across from the laser source. In an embodiment, the detector is configured to be optically coupled to the laser source.

公开(公告)号：US11817320B2

公开(公告)日：2023-11-14

申请号：US16554834

申请日：2019-08-29

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Kelvin Chan ,  Hien Minh Le ,  Sanjay Kamath ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Karthik Janakiraman

IPC: C23C16/50 ,  H01L21/285 ,  H01L21/02 ,  C23C16/06 ,  C23C16/02 ,  C23C16/40 ,  C23C16/505 ,  C23C28/00 ,  H01L21/3205 ,  H01L21/768 ,  H10B43/27

CPC classification number: H01L21/28506 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/402 ,  C23C16/505 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/42 ,  H01L21/0245 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02697 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051 ,  H01L21/76876 ,  H10B43/27

Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

公开(公告)号：US11562904B2

公开(公告)日：2023-01-24

申请号：US16934730

申请日：2020-07-21

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Germanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: H01L21/033 ,  H01L21/02

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US20220244205A1

公开(公告)日：2022-08-04

申请号：US17166967

申请日：2021-02-03

Applicant: Applied Materials, Inc.

Inventor： Xiaopu Li ,  Kallol Bera ,  Yaoling Pan ,  Kelvin Chan ,  Amir Bayati ,  Philip Allan Kraus ,  Kenric T. Choi ,  William John Durand

IPC: G01N27/22 ,  H01L21/67 ,  C23C16/455 ,  C23C16/52 ,  G01N33/00

Abstract: Embodiments disclosed herein include gas concentration sensors, and methods of using such gas concentration sensors. In an embodiment, a gas concentration sensor comprises a first electrode. In an embodiment the first electrode comprises first fingers. In an embodiment, the gas concentration sensor further comprises a second electrode. In an embodiment, the second electrode comprises second fingers that are interdigitated with the first fingers.

公开(公告)号：US11289374B2

公开(公告)日：2022-03-29

申请号：US16467669

申请日：2017-11-29

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Kelvin Chan ,  Xinliang Lu ,  Srinivas Gandikota ,  Yong Wu ,  Susmit Singha Roy ,  Chia Cheng Chin

IPC: H01L21/76 ,  H01L21/768 ,  C23C16/02 ,  C23C16/455 ,  C23C16/458 ,  H01L21/285 ,  H01L21/687 ,  H01L23/532

Abstract: Processing methods comprise forming a gap fill layer comprising tungsten or molybdenum by exposing a substrate surface having at least one feature thereon sequentially to a metal precursor and a reducing agent comprising hydrogen to form the gap fill layer in the feature, wherein there is not a nucleation layer between the substrate surface and the gap fill layer.