公开(公告)号：US08803068B2

公开(公告)日：2014-08-12

申请号：US13337855

申请日：2011-12-27

申请人： Nicole D. Kerness ,  Arkadii V. Samoilov ,  Zhihai Wang ,  Joy T. Jones

发明人： Nicole D. Kerness ,  Arkadii V. Samoilov ,  Zhihai Wang ,  Joy T. Jones

IPC分类号： G01J3/50

CPC分类号： H01L31/02327 ,  G01S17/58 ,  H01L27/1446 ,  H01L31/102 ,  H01L31/112 ,  H01L31/167 ,  H01L31/18

摘要： Techniques are described to furnish an IR suppression filter, or any other interference based filter, that is formed on a transparent substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate. The photodetectors are configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a transparent substrate. The light sensor may also include a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer.

摘要翻译： 描述了将技术描述为在光传感器的透明基板上形成的IR抑制滤波器或任何其它基于干涉的滤波器。 在一个或多个实施方式中，光传感器包括具有表面的基板。 在衬底中形成一个或多个光电检测器。 光电检测器被配置为检测光并响应于此提供信号。 构造成阻挡红外光到达表面的IR抑制滤光器形成在透明基板上。 光传感器还可以包括布置在表面上的多个彩色滤光片。 彩色通过滤光器被配置为过滤可见光以将有限的波长光中的光传递到一个或多个光电检测器。 缓冲层设置在表面上并且被配置为封装多个彩色通过滤光片和粘附层。

公开(公告)号：US08259464B2

公开(公告)日：2012-09-04

申请号：US12822326

申请日：2010-06-24

申请人： Tiao Zhou ,  Arkadii V. Samoilov

发明人： Tiao Zhou ,  Arkadii V. Samoilov

IPC分类号： H05K7/12 ,  H01L21/44

CPC分类号： H01L23/3171 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03462 ,  H01L2224/0382 ,  H01L2224/03828 ,  H01L2224/0384 ,  H01L2224/03903 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05111 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/11312 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2224/11 ,  H01L2224/05552 ,  H01L2924/00

摘要： WLP semiconductor devices include bump assemblies that have a barrier layer for inhibiting electromigration within the bump assemblies. In an implementation, the bump assemblies include copper posts formed on the integrated circuit chips of the WLP devices. Barrier layers formed of a metal such as nickel (Ni) are provided on the outer surface of the copper posts to inhibit electromigration in the bump assembly. Oxidation prevention caps formed of a metal such as tin (Sn) are provided over the barrier layer. Solder bumps are formed over the oxidation prevention caps. The oxidation prevention caps inhibit oxidation of the barrier layer during fabrication of the bump assemblies.

摘要翻译： WLP半导体器件包括具有用于抑制凸块组件内的电迁移的阻挡层的凸块组件。 在一个实现中，凸块组件包括形成在WLP器件的集成电路芯片上的铜柱。 在铜柱的外表面上设置由诸如镍（Ni）的金属形成的阻挡层，以抑制凸块组件中的电迁移。 由锡（Sn）等金属形成的防氧化膜设置在阻挡层的上方。 在氧化防止盖上形成焊料凸块。 氧化防止帽在制造凸块组件期间阻止阻挡层的氧化。

公开(公告)号：US20120187281A1

公开(公告)日：2012-07-26

申请号：US13337864

申请日：2011-12-27

申请人： Nicole D. Kerness ,  Arkadii V. Samoilov ,  Zhihai Wang ,  Joy T. Jones

发明人： Nicole D. Kerness ,  Arkadii V. Samoilov ,  Zhihai Wang ,  Joy T. Jones

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14621 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02165 ,  H01L31/02327 ,  H01L31/18 ,  H01L2224/13

摘要： Techniques are described to furnish an IR suppression filter that is formed on a glass substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate and configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a glass substrate. The light sensor also includes a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer. The light sensor further includes through-silicon vias to provide electrical interconnections between different conductive layers.

摘要翻译： 描述了技术来提供在玻璃基板上形成到光传感器的IR抑制滤光器。 在一个或多个实施方式中，光传感器包括具有表面的基板。 在衬底中形成一个或多个光电检测器，并配置成检测光并响应于此提供信号。 构造成阻挡红外光到达表面的IR抑制滤光器形成在玻璃基板上。 光传感器还包括布置在表面上的多个彩色滤光片。 彩色通过滤光器被配置为过滤可见光以将有限的波长光中的光传递到一个或多个光电检测器。 缓冲层设置在表面上并且被配置为封装多个彩色通过滤光片和粘附层。 光传感器还包括穿硅通孔，以提供不同导电层之间的电互连。

公开(公告)号：US20120108039A1

公开(公告)日：2012-05-03

申请号：US13346503

申请日：2012-01-09

申请人： Ali Zojaji ,  Arkadii V. Samoilov

发明人： Ali Zojaji ,  Arkadii V. Samoilov

IPC分类号： H01L21/205 ,  H01L21/306

CPC分类号： H01L21/02019 ,  B08B7/0035 ,  H01L21/02046 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/3065 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814

摘要： Embodiments of the invention generally relate to methods for treating a silicon-containing material on a substrate surface and performing a chamber clean process. In one embodiment, a method includes positioning a substrate containing a silicon material having a contaminant thereon within a process chamber and exposing the substrate to an etching gas containing chlorine gas and a silicon source gas while removing the contaminant and maintaining a temperature of the substrate within a range from about 500° C. to less than about 800° C. during an etching process. The method further includes exposing the substrate to a deposition gas after the etching process during a deposition process and exposing the process chamber to a chamber clean gas containing chlorine gas and the silicon source gas after the deposition process during a chamber clean process. The chamber clean process limits the etching of quartz and metal surfaces within the process chamber.

摘要翻译： 本发明的实施方案一般涉及在基材表面处理含硅材料并进行室清洁工艺的方法。 在一个实施例中，一种方法包括将含有其上具有污染物的硅材料的衬底定位在处理室内，并将衬底暴露于含有氯气和硅源气体的蚀刻气体，同时除去污染物并保持衬底的温度 在蚀刻过程中约500℃至小于约800℃的范围。 该方法还包括在沉积工艺期间在蚀刻工艺之后将衬底暴露于沉积气体，并且在室清洁过程中在沉积过程之后将处理室暴露于含有氯气的室清洁气体和沉积工艺之后的硅源气体。 室清洁过程限制了处理室内的石英和金属表面的蚀刻。

公开(公告)号：US20110230036A1

公开(公告)日：2011-09-22

申请号：US13149865

申请日：2011-05-31

申请人： Zhiyuan Ye ,  Yihwan Kim ,  Xiaowei Li ,  Ali Zojaji ,  Nicholas C. Dalida ,  Jinsong Tang ,  Xiao Chen ,  Arkadii V. Samoilov

发明人： Zhiyuan Ye ,  Yihwan Kim ,  Xiaowei Li ,  Ali Zojaji ,  Nicholas C. Dalida ,  Jinsong Tang ,  Xiao Chen ,  Arkadii V. Samoilov

IPC分类号： H01L21/20

CPC分类号： H01L21/02639 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.

摘要翻译： 在第一方面中，提供了在基板上形成外延膜的方法。 该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。 提供了许多其他方面。

公开(公告)号：US07871469B2

公开(公告)日：2011-01-18

申请号：US10867591

申请日：2004-06-14

申请人： Dan Maydan ,  Arkadii V. Samoilov

发明人： Dan Maydan ,  Arkadii V. Samoilov

IPC分类号： C30B21/02

CPC分类号： G02B6/132 ,  G02B2006/12095 ,  G02B2006/121 ,  Y10T117/10

摘要： A method of forming a planar waveguide structure, comprising forming a first graded layer on a substrate, wherein the first graded layer comprises a first and a second optical material, wherein the concentration of the first optical material increases with the height of the first graded layer; forming a second graded layer on the first graded layer, the second graded layer comprising the first and second optical materials wherein the concentration of the first optical material decreases with the height of the second graded layer. The method further including forming a uniform layer on the first graded layer, the uniform layer containing first and second optical materials wherein the first optical material concentration is constant.

摘要翻译： 一种形成平面波导结构的方法，包括在衬底上形成第一渐变层，其中所述第一渐变层包括第一和第二光学材料，其中所述第一光学材料的浓度随着所述第一渐变层的高度而增加 ; 在所述第一渐变层上形成第二渐变层，所述第二渐变层包括所述第一和第二光学材料，其中所述第一光学材料的浓度随着所述第二渐变层的高度而降低。 该方法还包括在第一梯度层上形成均匀的层，所述均匀层包含第一和第二光学材料，其中第一光学材料浓度恒定。

公开(公告)号：US07166528B2

公开(公告)日：2007-01-23

申请号：US10683937

申请日：2003-10-10

申请人： Yihwan Kim ,  Arkadii V. Samoilov

发明人： Yihwan Kim ,  Arkadii V. Samoilov

IPC分类号： H01L21/44 ,  H01L21/336

CPC分类号： H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/78 ,  H01L29/7848

摘要： The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.

摘要翻译： 本发明通常教导了一种在衬底上沉积硅膜或硅锗膜的方法，包括将衬底放置在处理室内并将衬底表面加热至约600℃至约900℃的温度，同时 保持在约0.1托至约200托的范围内的压力。 沉积气体被提供到处理室，并且包括SiH 4 Si，可选的锗源气体，蚀刻剂，载气和任选的至少一种掺杂剂气体。 在基板上选择性地并外延生长硅膜或硅锗膜。 一个实施方案教导了用惰性气体作为载气沉积含硅膜的方法。 方法可以包括使用选择性硅锗外延膜的电子器件的制造。

公开(公告)号：US06494959B1

公开(公告)日：2002-12-17

申请号：US09493694

申请日：2000-01-28

申请人： Arkadii V. Samoilov ,  Dale R. DuBois ,  Bradley M. Curelop ,  David R. Carlson ,  Paul B. Comita

发明人： Arkadii V. Samoilov ,  Dale R. DuBois ,  Bradley M. Curelop ,  David R. Carlson ,  Paul B. Comita

IPC分类号： C23G100

CPC分类号： H01L21/02046 ,  Y10S438/906

摘要： A low pressure-high hydrogen flow rate process of cleaning a silicon wafer surface is described. The combination of process pressures below about 1 Torr with hydrogen flow rates up to about 3 SLM has been found to remove substantially all oxygen contamination from the silicon wafer surface at process temperatures less than about 800° C. without the use of a reactive gas. After processing at such process pressures and flow rates, even lower levels of oxygen contamination may be achieved by then increasing the process pressure, the hydrogen flow rate, and the process temperature, though the process temperature still remains less than 800° C. The combination of low pressure and high hydrogen flow rate can be achieved using a vacuum pumping speed of at least 30 cubic meters per hour. The present invention also describes an apparatus for cleaning a silicon wafer surface in which the processes of the present invention and other processes can be practiced.

公开(公告)号：US06342453B1

公开(公告)日：2002-01-29

申请号：US09454423

申请日：1999-12-03

申请人： Shahab Khandan ,  Christopher T. Fulmer ,  Lori D. Washington ,  Herman P. Diniz ,  Lance A. Scudder ,  Arkadii V. Samoilov

发明人： Shahab Khandan ,  Christopher T. Fulmer ,  Lori D. Washington ,  Herman P. Diniz ,  Lance A. Scudder ,  Arkadii V. Samoilov

IPC分类号： H01L2131

CPC分类号： C23C16/45523 ,  C23C16/455 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/66242

摘要： A method and system for controlling the introduction of a species according to a determined concentration profile of a film comprising the species introduced on a substrate. In one aspect, the method comprises controlling the flow rate of a species according to a determined concentration profile of a film introduced on a substrate, and introducing a film on a substrate, the film comprising the species at a first concentration at a first point in the film and a second concentration different than the first concentration at a second point in the film. Also, a bipolar transistor including a collector layer of a first conductivity type, a base layer of a second conductivity type forming a first junction with the collector layer, and an emitter layer of the first conductivity type forming a second junction with the base layer. An electrode configured to direct carriers through the emitter layer to the base layer and into the collector layer is also included. In one embodiment, at least one of the first junction and the second junction is between different semiconductor materials to form at least one heterojunction. The heterojunction has a concentration profile of a semiconductor material such that an electric field changes in an opposite way to that of a mobility change.

摘要翻译： 根据确定的包含引入到基底上的物质的膜的浓度分布来控制物种的引入的方法和系统。 在一个方面，该方法包括根据确定的引入到基底上的膜的浓度分布来控制物种的流速，以及在基底上引入膜，所述膜在第一点处以第一浓度 并且在膜的第二点处具有与第一浓度不同的第二浓度。 此外，包括第一导电类型的集电极层，形成与集电极层的第一结的第二导电类型的基极层以及与基极层形成第二结的第一导电类型的发射极层的双极晶体管。 还包括被配置为将载流子引导通过发射极层到基极层并进入集电极层的电极。 在一个实施例中，第一结和第二结中的至少一个位于不同的半导体材料之间以形成至少一个异质结。 异质结具有半导体材料的浓度分布，使得电场以与迁移率变化相反的方式改变。

公开(公告)号：US20140077355A1

公开(公告)日：2014-03-20

申请号：US13617915

申请日：2012-09-14

申请人： Peter R. Harper ,  Arkadii V. Samoilov ,  Don Dias

发明人： Peter R. Harper ,  Arkadii V. Samoilov ,  Don Dias

IPC分类号： H01L23/498 ,  H01L21/56

CPC分类号： H01L25/0657 ,  H01L23/16 ,  H01L23/3128 ,  H01L23/576 ,  H01L24/17 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/17505 ,  H01L2224/32265 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81986 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/81 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor package device that includes an integrated circuit device package having a storage circuitry is disclosed. In an implementation, the semiconductor package device includes a semiconductor substrate having a first surface and a second surface. The semiconductor substrate includes one or more integrated circuits formed proximal to (e.g., adjacent to, in, or on) the first surface. The semiconductor package device also includes an integrated circuit device disposed over the second surface, the integrated circuit device including storage circuitry for storing sensitive data. In one or more implementations, the semiconductor package device includes a through-substrate via that furnishes an electrical connection to the integrated circuit package. The semiconductor package device also includes an encapsulation structure disposed over the second surface and at least substantially encapsulates the integrated circuit device package.

摘要翻译： 公开了一种包括具有存储电路的集成电路器件封装的半导体封装器件。 在一个实施方案中，半导体封装器件包括具有第一表面和第二表面的半导体衬底。 半导体衬底包括一个或多个集成电路，其形成在第一表面附近（例如，邻近，在，或之上）。 半导体封装器件还包括设置在第二表面上的集成电路器件，该集成电路器件包括用于存储敏感数据的存储电路。 在一个或多个实施方案中，半导体封装器件包括通孔，其提供与集成电路封装件的电连接。 半导体封装器件还包括设置在第二表面上并且至少基本上封装集成电路器件封装的封装结构。