公开(公告)号：US20070212896A1

公开(公告)日：2007-09-13

申请号：US11683984

申请日：2007-03-08

申请人： Christopher Olsen ,  Thai Chua ,  Steven Hung ,  Patricia Liu ,  Tatsuya Sato ,  Alex Paterson ,  Valentin Todorov ,  John Holland

发明人： Christopher Olsen ,  Thai Chua ,  Steven Hung ,  Patricia Liu ,  Tatsuya Sato ,  Alex Paterson ,  Valentin Todorov ,  John Holland

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02175 ,  H01J37/32082 ,  H01J37/32146 ,  H01L21/02148 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/3144 ,  H01L21/316 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513

摘要： The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material.

摘要翻译： 本发明通常提供适于在衬底上形成高质量电介质栅极层的方法和装置。 实施例考虑了一种方法，其中使用金属等离子体处理工艺代替标准氮化工艺以在衬底上形成高介电常数层。 实施例进一步考虑了一种适于“植入”相对较低能量的金属离子的装置，以便减少对诸如二氧化硅层的栅极介电层的离子轰击损伤，并避免将金属原子并入到下面的硅中。 通常，该方法包括以下步骤：形成高k电介质，然后终止沉积的高k材料的表面，以在栅电极和高k电介质材料之间形成良好的界面。

公开(公告)号：US20070152427A1

公开(公告)日：2007-07-05

申请号：US11617881

申请日：2006-12-29

申请人： Christopher Olsen

发明人： Christopher Olsen

IPC分类号： B62B1/00 ,  B62B3/00

CPC分类号： A61G5/061 ,  A61G5/046 ,  A61G5/063 ,  A61G5/1051 ,  A61G5/1059 ,  A61G5/1072 ,  A61G5/1078 ,  A61G7/1076 ,  A61G2203/14 ,  B60K7/0007 ,  B60K17/32 ,  B60K17/356 ,  B60K2007/0038 ,  B60K2007/0061 ,  B60L11/1877 ,  B60L15/20 ,  B60L2200/26 ,  B60L2200/34 ,  B60L2220/46 ,  B60L2240/24 ,  B60L2240/423 ,  B60L2270/145 ,  B60Y2200/84 ,  Y02T10/645 ,  Y02T10/7005 ,  Y02T10/705 ,  Y02T10/72 ,  Y02T10/7275 ,  Y10S180/907 ,  Y10S180/908

摘要： The disclosed articulated wheel assemblies and associated vehicles, for example wheelchairs, include articulated wheel assemblies with at least one offset connecting arm rotatably attached at one end to a payload platform, for example a seat, and attached at the other end to a linear actuator, where the linear actuator is further connected to a wheel. Embodiments include a rotary actuator for varying the linear actuator swing angle, a rotary actuator for eccentrically rotating a hubless wheel, a linear actuator motor for varying the length of the linear actuator, and a propulsion motor. Embodiments provide omnidirectional motion, stepping action when presented with obstacles, irregular surface negotiation, tight space maneuvering and other features to provide disabled people increased mobility. Alternate embodiments include a payload platform with a support strut, which is rotatably attached to an offset connecting arm and pivotally mounted to a seat.

摘要翻译： 公开的铰接轮组件和相关联的车辆（例如轮椅）包括铰接轮组件，其具有至少一个偏移连接臂，其一端可旋转地附接到有效载荷平台（例如座椅）上，并且在另一端附接到线性致动器， 其中线性致动器进一步连接到车轮。 实施例包括用于改变线性致动器摆动角度的旋转致动器，用于使无轮毂偏心旋转的旋转致动器，用于改变线性致动器的长度的线性致动器马达和推进马达。 实施例提供全方向运动，呈现障碍时的步进动作，不规则表面协商，空间空间操纵等功能，为残疾人提供更多的行动能力。 替代实施例包括具有支撑支柱的有效载荷平台，其可旋转地附接到偏移连接臂并枢转地安装到座椅。

公开(公告)号：US20070093012A1

公开(公告)日：2007-04-26

申请号：US11255857

申请日：2005-10-20

申请人： Thai Chua ,  Cory Czarnik ,  Christopher Olsen ,  Khaled Ahmed ,  Philip Kraus

发明人： Thai Chua ,  Cory Czarnik ,  Christopher Olsen ,  Khaled Ahmed ,  Philip Kraus

IPC分类号： H01L21/8234 ,  H01L21/336 ,  H01L21/3205 ,  H01L21/31

CPC分类号： H01L21/31662 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/3185 ,  H01L21/823857 ,  H01L29/518 ,  Y10S438/908

摘要： A method for fabricating a gate dielectric of a field effect transistor is disclosed herein. In one embodiment, the method includes the steps of removing a native oxide layer, forming an oxide layer, forming a gate dielectric layer over the oxide layer, oxidizing the gate dielectric layer, and annealing the layers and underlying thermal oxide/silicon interface. Optionally, the oxide layer may be nitridized prior to forming the gate dielectric layer. Optionally, the gate dielectric layer may be nitridized prior to oxidizing the gate dielectric layer. In one embodiment, at least portions of the method are performed using processing reactors arranged on a cluster tool.

摘要翻译： 本文公开了一种用于制造场效应晶体管的栅极电介质的方法。 在一个实施例中，该方法包括以下步骤：去除自然氧化物层，形成氧化物层，在氧化物层上形成栅极电介质层，氧化栅极电介质层，以及退火层和下面的热氧化物/硅界面。 任选地，氧化物层可以在形成栅极电介质层之前被氮化。 可选地，栅极电介质层可以在氧化栅极电介质层之前被氮化。 在一个实施例中，使用布置在群集工具上的处理反应器来执行该方法的至少一部分。

公开(公告)号：US07078302B2

公开(公告)日：2006-07-18

申请号：US10784904

申请日：2004-02-23

申请人： Yi Ma ,  Khaled Z. Ahmed ,  Kevin L. Cunningham ,  Robert C. McIntosh ,  Abhilash J. Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Yue Becky Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Eugene Miner

发明人： Yi Ma ,  Khaled Z. Ahmed ,  Kevin L. Cunningham ,  Robert C. McIntosh ,  Abhilash J. Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Yue Becky Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Eugene Miner

IPC分类号： H01L21/336 ,  H01L21/22 ,  H01L21/38 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/268 ,  H01L21/28035 ,  H01L21/324

摘要： In one embodiment, the invention generally provides a method for annealing a doped layer on a substrate including depositing a polycrystalline layer to a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer.

摘要翻译： 在一个实施例中，本发明通常提供了一种用于退火衬底上的掺杂层的方法，包括将多晶层沉积到栅极氧化物层并用掺杂剂注入多晶层以形成掺杂的多晶层。 该方法还包括将掺杂多晶层暴露于快速热退火以便容易地将掺杂剂分布在整个多晶层中。 随后，该方法包括将掺杂多晶层暴露于激光退火以激活多晶层上部的掺杂剂。

公开(公告)号：US20060153871A1

公开(公告)日：2006-07-13

申请号：US11033248

申请日：2005-01-11

申请人： Christopher Olsen ,  Gabriele Landolt ,  Alexander Karasin

发明人： Christopher Olsen ,  Gabriele Landolt ,  Alexander Karasin

IPC分类号： A61K39/145 ,  C07H21/04 ,  C07K14/11 ,  C12N7/00

CPC分类号： A61K39/145 ,  A61K9/0019 ,  A61K9/0043 ,  A61K39/12 ,  A61K2039/525 ,  A61K2039/5252 ,  A61K2039/5254 ,  A61K2039/54 ,  A61K2039/543 ,  A61K2039/552 ,  A61K2039/70 ,  C07K14/005 ,  C12N7/00 ,  C12N2760/16121 ,  C12N2760/16122 ,  C12N2760/16134 ,  C12R1/91 ,  G01N33/56983 ,  G01N2333/11

摘要： The invention provides an isolated H3 equine influenza A virus, as well as methods of preparing and using the virus, and genes or proteins thereof.

公开(公告)号：US20050260357A1

公开(公告)日：2005-11-24

申请号：US10851514

申请日：2004-05-21

申请人： Christopher Olsen ,  Pravin Narwankar ,  Shreyas Kher ,  Randhir Thakur ,  Shankar Muthukrishnan ,  Philip Kraus

发明人： Christopher Olsen ,  Pravin Narwankar ,  Shreyas Kher ,  Randhir Thakur ,  Shankar Muthukrishnan ,  Philip Kraus

IPC分类号： C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  B05D7/00

CPC分类号： H01L21/3141 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/56 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/31637 ,  H01L21/31645 ,  H01L29/517

摘要： In one embodiment, a method for forming a dielectric stack on a substrate is provided which includes depositing a first layer of a dielectric material on a substrate surface, exposing the first layer to a nitridation process, depositing a second layer of the dielectric material on the first layer, exposing the second layer to the nitridation process, and exposing the substrate to an anneal process. In another embodiment, a method for forming a dielectric material on a substrate is provided which includes depositing a metal oxide layer substantially free of silicon on a substrate surface, exposing the metal oxide layer to a nitridation process, and exposing the substrate to an anneal process.

摘要翻译： 在一个实施例中，提供了一种在衬底上形成电介质堆叠的方法，其包括在衬底表面上沉积介电材料的第一层，将第一层暴露于氮化工艺，将第二层介电材料沉积在 第一层，将第二层暴露于氮化工艺，并将衬底暴露于退火工艺。 在另一个实施例中，提供了一种用于在衬底上形成介电材料的方法，其包括在衬底表面上沉积基本上不含硅的金属氧化物层，将金属氧化物层暴露于氮化工艺，以及将衬底暴露于退火工艺 。

公开(公告)号：US20050186765A1

公开(公告)日：2005-08-25

申请号：US10784904

申请日：2004-02-23

申请人： Yi Ma ,  Khaled Ahmed ,  Kevin Cunningham ,  Robert McIntosh ,  Abhilash Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Miner

发明人： Yi Ma ,  Khaled Ahmed ,  Kevin Cunningham ,  Robert McIntosh ,  Abhilash Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Miner

IPC分类号： H01L21/268 ,  H01L21/28 ,  H01L21/324 ,  H01L21/36 ,  C30B1/00 ,  H01L21/20 ,  H01L21/425 ,  H01L21/44

CPC分类号： H01L21/268 ,  H01L21/28035 ,  H01L21/324

摘要： In one embodiment, the invention generally provides a method for annealing a doped layer on a substrate including depositing a polycrystalline layer to a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer.

摘要翻译： 在一个实施例中，本发明通常提供了一种用于退火衬底上的掺杂层的方法，包括将多晶层沉积到栅极氧化物层并用掺杂剂注入多晶层以形成掺杂的多晶层。 该方法还包括将掺杂多晶层暴露于快速热退火以便容易地将掺杂剂分布在整个多晶层中。 随后，该方法包括将掺杂多晶层暴露于激光退火以激活多晶层上部的掺杂剂。

公开(公告)号：US10049881B2

公开(公告)日：2018-08-14

申请号：US13536443

申请日：2012-06-28

申请人： Matthew S. Rogers ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcolm J. Bevan

发明人： Matthew S. Rogers ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcolm J. Bevan

IPC分类号： H01L21/67 ,  H01J37/32 ,  H01L21/28 ,  H01L21/02 ,  H01L21/321 ,  H01L27/11524

摘要： Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.

公开(公告)号：US20130040444A1

公开(公告)日：2013-02-14

申请号：US13536443

申请日：2012-06-28

申请人： MATTHEW S. ROGERS ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcom J. Bevan

发明人： MATTHEW S. ROGERS ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcom J. Bevan

IPC分类号： H01L21/26

CPC分类号： H01L21/28273 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/3211 ,  H01L27/11524

摘要： Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.

摘要翻译： 本发明的实施例提供了一种用于氮化堆叠材料的改进的装置和方法。 在一个实施例中，远程等离子体系统包括限定用于产生包括离子和自由基的等离子体的第一区域的远程等离子体室，限定用于处理半导体器件的第二区域的处理室，所述处理室包括形成在侧壁 处理室的入口端口与第二区域流体连通，以及设置在远程等离子体室和处理室之间并具有与第一区域和入口流体连通的通道的输送构件，其中输送 构件被构造成使得通道的纵向轴线相对于入口的纵向轴线以大约20度至大约80度的角度相交。

公开(公告)号：US20080076268A1

公开(公告)日：2008-03-27

申请号：US11861578

申请日：2007-09-26

申请人： Philip Allan Kraus ,  Christopher Olsen ,  Khaled Z. Ahmed

发明人： Philip Allan Kraus ,  Christopher Olsen ,  Khaled Z. Ahmed

IPC分类号： H01L21/31

CPC分类号： H01L21/3115 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/518

摘要： Embodiments of the present invention generally provide a method for forming a dielectric material with reduced bonding defects on a substrate. In one embodiment, the method comprises forming a dielectric layer having a desired thickness on a surface of a substrate, exposing the substrate to a low energy plasma comprising a fluorine source gas to form a fluorinated dielectric layer on the substrate without etching the dielectric layer, and forming a gate electrode on the substrate. In certain embodiments, the fluorine source gas is a carbon free gas. In certain embodiments, the method further comprises co-flowing a gas selected from the group consisting of argon, helium, N2, O2, and combinations thereof with the fluorine source gas.

摘要翻译： 本发明的实施方案通常提供一种在基片上形成具有降低的结合缺陷的电介质材料的方法。 在一个实施例中，该方法包括在衬底的表面上形成具有所需厚度的电介质层，将衬底暴露于包含氟源气体的低能量等离子体，以在衬底上形成氟化电介质层，而不蚀刻介电层， 以及在所述衬底上形成栅电极。 在某些实施方案中，氟源气体是无碳气体。 在某些实施方案中，该方法还包括将选自氩，氦，N 2，O 2，及其组合的气体与氟源共流 加油站。