Chip package with degassing holes
    11.
    发明授权
    Chip package with degassing holes 有权
    芯片封装带脱气孔

    公开(公告)号:US06225687B1

    公开(公告)日:2001-05-01

    申请号:US09388768

    申请日:1999-09-02

    申请人: Dustin P. Wood

    发明人: Dustin P. Wood

    IPC分类号: H01L2316

    摘要: A semiconductor device package includes multiple built-up layers of metal sandwiching non-conductive layers. The metal layers have grids of degassing holes arranged in rows and columns. The rows and columns are locatable via a first coordinate system. Signal traces are embedded within the non-conductive layers such that the signal traces are also sandwiched between the metal layers with degassing holes. The signal traces generally run at zero degrees, 45 degrees, and 90 degrees relative to a second coordinate system. The first coordinate system is rotated relative to the second coordinate system to lower impedance variations of different traces. Impedance variations decrease due to the decreased variation in the number of degassing holes passed over or under by a trace. The grid of degassing holes on one metal layer can be offset in two dimensions relative to the degassing holes on another layer.

    摘要翻译: 半导体器件封装包括金属夹层非导电层的多个堆积层。 金属层具有以排和列排列的脱气孔格栅。 行和列可通过第一个坐标系定位。 信号迹线嵌入在非导电层内,使得信号迹线也被夹在具有脱气孔的金属层之间。 信号迹线通常相对于第二坐标系以零度,45度和90度的速度运行。 第一坐标系相对于第二坐标系旋转以降低不同轨迹的阻抗变化。 阻抗变化由于通过痕迹通过或减少的脱气孔的数量的变化减小而减小。 一个金属层上的脱气孔的网格可以相对于另一层上的脱气孔在两个维度上偏移。

    Selective plating of package terminals
    15.
    发明授权
    Selective plating of package terminals 有权
    包装端子的选择性电镀

    公开(公告)号:US07321172B2

    公开(公告)日:2008-01-22

    申请号:US11227532

    申请日:2005-09-14

    IPC分类号: H01L23/48

    摘要: In one embodiment, a method including providing a semiconductor pad package having a first pad and a second pad is disclosed. A first layer comprising a first metal is deposited on the first pad using a first process. A second metal is then deposited on the first pad and the first layer using a second process. In another embodiment, the first process comprises and electroplating process, and the second process comprises a direct immersion gold (DIG) process. In a further embodiment, the first pad is a power or ground pad, and the second pad is a signal pad.

    摘要翻译: 在一个实施例中,公开了一种包括提供具有第一焊盘和第二焊盘的半导体焊盘封装的方法。 使用第一工艺将包含第一金属的第一层沉积在第一焊盘上。 然后使用第二工艺将第二金属沉积在第一焊盘和第一层上。 在另一个实施例中,第一工艺包括电镀工艺,第二工艺包括直接浸金(DIG)工艺。 在另一实施例中,第一焊盘是电源或接地焊盘,第二焊盘是信号焊盘。

    Chip package with degassing holes
    17.
    发明授权
    Chip package with degassing holes 有权
    芯片封装带脱气孔

    公开(公告)号:US07243423B2

    公开(公告)日:2007-07-17

    申请号:US11000255

    申请日:2004-11-30

    申请人: Dustin P. Wood

    发明人: Dustin P. Wood

    IPC分类号: H01R43/00

    摘要: A semiconductor device package includes multiple built-up layers of metal sandwiching non-conductive layers. The metal layers have grids of degassing holes arranged in rows and columns. The rows and columns are locatable via a first coordinate system. Signal traces are embedded within the non-conductive layers such that the signal traces are also sandwiched between the metal layers with degassing holes. The signal traces generally run at zero degrees, 45 degrees, and 90 degrees relative to a second coordinate system. The first coordinate system is rotated relative to the second coordinate system to lower impedance variations of different traces. Impedance variations decrease due to the decreased variation in the number of degassing holes passed over or under by a trace. The grid of degassing holes on one metal layer can be offset in two dimensions relative to the degassing holes on another layer.

    摘要翻译: 半导体器件封装包括金属夹层非导电层的多个堆积层。 金属层具有以排和列排列的脱气孔格栅。 行和列可通过第一个坐标系定位。 信号迹线嵌入在非导电层内,使得信号迹线也被夹在具有脱气孔的金属层之间。 信号迹线通常相对于第二坐标系以零度,45度和90度的速度运行。 第一坐标系相对于第二坐标系旋转以降低不同轨迹的阻抗变化。 阻抗变化由于通过痕迹通过或减少的脱气孔的数量的变化减小而减小。 一个金属层上的脱气孔的网格可以相对于另一层上的脱气孔在两个维度上偏移。

    iTFC with optimized C(T)
    19.
    发明授权
    iTFC with optimized C(T) 有权
    iTFC优化C(T)

    公开(公告)号:US07656644B2

    公开(公告)日:2010-02-02

    申请号:US11972579

    申请日:2008-01-10

    IPC分类号: H01G4/228

    摘要: A method including depositing a suspension of a colloid having an amount of nano-particles of a ceramic material on a substrate; and thermally treating the suspension to form a thin film. A method including depositing a plurality of nano-particles of a ceramic material to pre-determined locations across a surface of a substrate; and thermally treating the plurality of nano-particles to form a thin film. A system including a computing device having a microprocessor, the microprocessor coupled to a printed circuit board through a substrate, the substrate having at least one capacitor structure formed on a surface, the capacitor structure having a first electrode, a second electrode, and a ceramic material disposed between the first electrode and the second electrode, wherein the ceramic material has columnar grains.

    摘要翻译: 一种方法,包括在衬底上沉积具有一定量的陶瓷材料的纳米颗粒的胶体的悬浮液; 并对悬浮液进行热处理以形成薄膜。 一种方法,包括将陶瓷材料的多个纳米颗粒沉积在衬底的表面上的预定位置; 并对多个纳米颗粒进行热处理以形成薄膜。 一种包括具有微处理器的计算设备的系统,所述微处理器通过衬底耦合到印刷电路板,所述衬底具有形成在表面上的至少一个电容器结构,所述电容器结构具有第一电极,第二电极和陶瓷 设置在第一电极和第二电极之间的材料,其中陶瓷材料具有柱状晶粒。