公开(公告)号：US20090059986A1

公开(公告)日：2009-03-05

申请号：US12039303

申请日：2008-02-28

Applicant: Koichi TACHIBANA ,  Shinji SAITO ,  Shinya NUNOUE ,  Haruhiko YOSHIDA

Inventor： Koichi TACHIBANA ,  Shinji SAITO ,  Shinya NUNOUE ,  Haruhiko YOSHIDA

IPC: H01S5/30

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2218 ,  H01S2301/18

Abstract: A semiconductor light emitting element includes a first clad layer of a first conductivity type provided on a substrate; an active layer provided on the first clad layer; a second clad layer of a second conductivity type provided on the active layer, an upper portion of the second clad layer implements a ridge extending in a predetermined direction; a pair of first current block layers provided on the second clad layer sandwiching the ridge along the extending direction; and a pair of second current block layers provided between the first current block layers on the second clad layer and at sidewalls of the ridge to be contacted with the first current block layers, sandwiching selectively a region including an edge of the ridge, the second current block layers having a refractive index larger than the first current block layers at an emission peak wavelength of the active layer.

Abstract translation: 半导体发光元件包括设置在基板上的第一导电类型的第一覆盖层; 设置在所述第一包层上的有源层; 设置在所述有源层上的第二导电类型的第二覆盖层，所述第二覆层的上部实现沿预定方向延伸的脊; 一对第一电流阻挡层，设置在沿所述延伸方向夹着所述脊的所述第二覆层上; 以及一对第二电流阻挡层，设置在所述第二覆盖层上的所述第一电流阻挡层之间并且在所述脊的侧壁处与所述第一电流阻挡层接触，选择性地夹持包括所述脊的边缘的区域，所述第二电流 在有源层的发射峰值波长处具有大于第一电流阻挡层的折射率的阻挡层。

公开(公告)号：US20090058256A1

公开(公告)日：2009-03-05

申请号：US12143382

申请日：2008-06-20

Applicant: Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

Inventor： Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

IPC: H01J1/62

CPC classification number: H01L33/504 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00

Abstract: A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

Abstract translation: 提供了一种发光器件，其包括具有第一部分和围绕其的第二部分的封装，安装在第一部分上并发射在近紫外区域具有发射峰的光的半导体发光元件， 覆盖半导体发光元件并与封装物接触的透明树脂层和形成在透明树脂层上的层叠体，层叠体的端面与第二部分接触。 透明树脂层具有拱形外形垂直横截面。 层叠体具有垂直截面的拱形外部轮廓，并且包括以上述顺序层压的红色荧光层，黄色荧光层，绿色荧光层和蓝色荧光体层。 黄色荧光层具有比其端面部分的厚度大的顶部。

公开(公告)号：US20130234298A1

公开(公告)日：2013-09-12

申请号：US13601120

申请日：2012-08-31

Applicant: Satoshi MITSUGI ,  Toshiyuki OKA ,  Shinya NUNOUE ,  Hiroshi KATSUNO

Inventor： Satoshi MITSUGI ,  Toshiyuki OKA ,  Shinya NUNOUE ,  Hiroshi KATSUNO

IPC: H01L23/34 ,  B23K26/20 ,  H01L23/00

CPC classification number: H01L23/34 ,  B23K26/0006 ,  B23K26/009 ,  B23K26/18 ,  B23K26/20 ,  B23K2103/56 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29099 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29149 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29166 ,  H01L2224/29171 ,  H01L2224/29172 ,  H01L2224/29184 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/75262 ,  H01L2224/75985 ,  H01L2224/83 ,  H01L2224/83193 ,  H01L2224/83224 ,  H01L2224/83399 ,  H01L2224/834 ,  H01L2224/83449 ,  H01L2224/83455 ,  H01L2224/83457 ,  H01L2224/8346 ,  H01L2224/83466 ,  H01L2224/83471 ,  H01L2224/83472 ,  H01L2224/83484 ,  H01L2224/83805 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/00

Abstract: According to an embodiment, a method for manufacturing a semiconductor device includes a placement step and a bonding step. The placement step faces a semiconductor active portion toward a support substrate portion via a bonding portion disposed between the semiconductor active portion and the support substrate portion. The bonding portion includes a bonding layer and a light absorption layer, absorptance of the light absorption layer for laser light being higher than or equal to absorptance of the bonding layer for the laser light. The bonding step bonds the semiconductor active portion and the support substrate portion by irradiating the light absorption layer with the laser light through the support substrate portion and melting the bonding layer by thermal conduction from the light absorption layer heated by the laser light.

Abstract translation: 根据实施例，半导体器件的制造方法包括放置步骤和接合步骤。 放置步骤经由设置在半导体有源部分和支撑衬底部分之间的接合部分朝向支撑衬底部分面向半导体有源部分。 接合部包括接合层和光吸收层，激光用光吸收层的吸收率高于或等于激光接合层的吸收率。 接合步骤通过用激光照射光吸收层并通过支撑基板部分粘合半导体活性部分和支撑基板部分，并且通过由激光加热的光吸收层进行热传导来熔化接合层。

公开(公告)号：US20120217471A1

公开(公告)日：2012-08-30

申请号：US13213373

申请日：2011-08-19

Applicant: Tomonari SHIODA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

Inventor： Tomonari SHIODA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

IPC: H01L33/04

CPC classification number: H01L33/06 ,  H01L33/04 ,  H01L33/32

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The n-type semiconductor layer includes a nitride semiconductor. The p-type semiconductor layer includes a nitride semiconductor. The light emitting part is provided between the n-type and the p-type semiconductor layers and includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, and a first AlGaN layer. The first barrier layer is provided between the n-side barrier layer and the p-type semiconductor layer. The first well layer contacts the n-side barrier layer between the n-side and the first barrier layer. The first AlGaN layer is provided between the first well layer and the first barrier layer. A peak wavelength λp of light emitted from the light emitting part is longer than 515 nanometers.

Abstract translation: 根据一个实施例，一种半导体发光器件包括n型半导体层，p型半导体层和发光部分。 n型半导体层包括氮化物半导体。 p型半导体层包括氮化物半导体。 发光部分设置在n型和p型半导体层之间，并且包括n侧阻挡层和第一发光层。 第一发光层包括第一阻挡层，第一阱层和第一AlGaN层。 第一阻挡层设置在n侧势垒层和p型半导体层之间。 第一阱层与n侧和第一阻挡层之间的n侧势垒层接触。 第一AlGaN层设置在第一阱层和第一势垒层之间。 从发光部发出的光的峰值波长λp长于515nm。

公开(公告)号：US20120056216A1

公开(公告)日：2012-03-08

申请号：US13214608

申请日：2011-08-22

Applicant: Iwao MITSUISHI ,  Yumi FUKUDA ,  Aoi OKADA ,  Naotoshi MATSUDA ,  Shinya NUNOUE ,  Keiko ALBESSARD ,  Masahiro KATO

Inventor： Iwao MITSUISHI ,  Yumi FUKUDA ,  Aoi OKADA ,  Naotoshi MATSUDA ,  Shinya NUNOUE ,  Keiko ALBESSARD ,  Masahiro KATO

IPC: H01L27/15

CPC classification number: H01L25/0753 ,  C09K11/0883 ,  C09K11/7734 ,  G09F13/20 ,  H01L33/502 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device according to one embodiment includes: a board; plural first light emitting units each including a first light emitting element and a first fluorescent layer formed on the first light emitting element having a green phosphor; plural second light emitting units each including a second light emitting element and a second fluorescent layer formed on the second light emitting element having a red phosphor; the second fluorescent layers and the first fluorescent layers being separated in a non-contact manner with gas interposed there between; and plural third light emitting units each including a third light emitting element and a resin layer formed on the third light emitting element having neither a green phosphor nor the red phosphor, the third light emitting units being disposed between the first light emitting units and the second light emitting units.

Abstract translation: 根据一个实施例的发光器件包括：板; 多个第一发光单元，每个包括形成在具有绿色荧光体的第一发光元件上的第一发光元件和第一荧光层; 多个第二发光单元，每个包括形成在具有红色荧光体的第二发光元件上的第二发光元件和第二荧光层; 第二荧光层和第一荧光层以介于其间的气体以非接触方式分离; 以及多个第三发光单元，每个包括第三发光元件和形成在第三发光元件上的树脂层，其中没有绿色荧光体和红色荧光体，第三发光单元设置在第一发光单元和第二发光单元之间 发光单元。

公开(公告)号：US20100102296A1

公开(公告)日：2010-04-29

申请号：US12652827

申请日：2010-01-06

Applicant: Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

Inventor： Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

Abstract: A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

Abstract translation: 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

公开(公告)号：US20140048816A1

公开(公告)日：2014-02-20

申请号：US13729457

申请日：2012-12-28

Applicant: Toru GOTODA ,  Shinji YAMADA ,  Shinya NUNOUE

Inventor： Toru GOTODA ,  Shinji YAMADA ,  Shinya NUNOUE

IPC: H01L33/32

CPC classification number: H01L33/32 ,  H01L33/0079 ,  H01L33/40 ,  H01L33/641

Abstract: According to one embodiment, a semiconductor light emitting device includes a metal substrate, a first semiconductor layer, a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first intermediate layer and a second intermediate layer. The substrate has a coefficient of thermal expansion not more than 10×10−6 m/K. The first and second semiconductor layer include a nitride semiconductor. The second semiconductor layer is provided between the substrate and the first semiconductor layer. The emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first intermediate layer is provided between the substrate and the second semiconductor layer. The second intermediate layer is provided between the first intermediate layer and the second semiconductor layer. a surface roughness of a first surface of the substrate contacting the first intermediate layer is less than a thickness of the first intermediate layer.

Abstract translation: 根据一个实施例，半导体发光器件包括金属衬底，第一半导体层，第一半导体层，第二半导体层，发光层，第一中间层和第二中间层。 基板的热膨胀系数不大于10×10 -6 m / K。 第一和第二半导体层包括氮化物半导体。 第二半导体层设置在基板和第一半导体层之间。 发光层设置在第一半导体层和第二半导体层之间。 第一中间层设置在基板和第二半导体层之间。 第二中间层设置在第一中间层和第二半导体层之间。 与第一中间层接触的基板的第一表面的表面粗糙度小于第一中间层的厚度。

公开(公告)号：US20130237036A1

公开(公告)日：2013-09-12

申请号：US13604183

申请日：2012-09-05

Applicant: Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

Inventor： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

IPC: H01L21/02

CPC classification number: H01L21/02389 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/12

Abstract: According to one embodiment, a method for manufacturing a nitride semiconductor layer is disclosed. The method can include forming a first lower layer on a major surface of a substrate and forming a first upper layer on the first lower layer. The first lower layer has a first lattice spacing along a first axis parallel to the major surface. The first upper layer has a second lattice spacing along the first axis larger than the first lattice spacing. At least a part of the first upper layer has compressive strain. A ratio of a difference between the first and second lattice spacing to the first lattice spacing is not less than 0.005 and not more than 0.019. A growth rate of the first upper layer in a direction parallel to the major surface is larger than that in a direction perpendicular to the major surface.

Abstract translation: 根据一个实施例，公开了一种用于制造氮化物半导体层的方法。 该方法可以包括在基底的主表面上形成第一下层，并在第一下层上形成第一上层。 第一下层沿着平行于主表面的第一轴线具有第一格子间距。 第一上层具有沿着第一轴线的第二格子间距大于第一格子间距。 第一上层的至少一部分具有压缩应变。 第一和第二格子间隔之间的差与第一格子间隔的比率不小于0.005且不大于0.019。 第一上层在与主表面平行的方向上的生长速率大于垂直于主表面的方向的生长速率。

公开(公告)号：US20120298952A1

公开(公告)日：2012-11-29

申请号：US13406770

申请日：2012-02-28

Applicant: Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Maki SUGAI ,  Shinya NUNOUE

Inventor： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Maki SUGAI ,  Shinya NUNOUE

IPC: H01L33/06 ,  H01L21/20 ,  H01L29/38

CPC classification number: H01L33/20 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/48

Abstract: According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations.

Abstract translation: 根据实施例，半导体发光器件包括基底层，第一半导体层，发光层和第二半导体层。 基底层具有凹部，侧部和突起部的凹凸。 基础层的第一主表面具有覆盖区域。 基底层具有多个位错，其包括一端到达凹部的第一位错和一端到达突起的第二位错。 到达第一主表面的第二位错的数量与所有第二位错的数量的比例小于到达第一主表面的第一位错的数量与所有第一位错的数量的比例。 到达第一主表面的覆盖区域的多个位错小于所有第一位错的数量。

公开(公告)号：US20120295377A1

公开(公告)日：2012-11-22

申请号：US13222238

申请日：2011-08-31

Applicant: Taisuke SATO ,  Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

Inventor： Taisuke SATO ,  Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

IPC: H01L33/60

CPC classification number: H01L33/0079 ,  H01L33/22

Abstract: According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.

Abstract translation: 根据一个实施例，公开了一种用于制造氮化物半导体器件的方法。 该方法可以包括通过使用第一处理材料从结构体移除生长衬底。 结构体具有生长衬底，形成在生长衬底上的缓冲层和形成在缓冲层上的氮化物半导体层。 支撑基板结合到氮化物半导体层。 该方法可以包括在除去生长衬底之后使用与第一处理材料不同的第二处理材料来减小缓冲层和氮化物半导体层的厚度。