公开(公告)号：US20130075913A1

公开(公告)日：2013-03-28

申请号：US13239533

申请日：2011-09-22

申请人： Edward C. Cooney, III ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Xiao Hu Liu ,  Thomas L. McDevitt ,  Gary L. Milo ,  William J. Murphy

发明人： Edward C. Cooney, III ,  Jeffrey P. Gambino ,  Zhong-Xiang He ,  Xiao Hu Liu ,  Thomas L. McDevitt ,  Gary L. Milo ,  William J. Murphy

IPC分类号： H01L23/485 ,  H01L21/3205

CPC分类号： H01L21/76802 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53295 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a method of fabricating the same, includes vertically stacked layers on an insulator. Each of the layers includes a first dielectric insulator portion, a first metal conductor embedded within the first dielectric insulator portion, a first nitride cap covering the first metal conductor, a second dielectric insulator portion, a second metal conductor embedded within the second dielectric insulator portion, and a second nitride cap covering the second metal conductor. The first and second metal conductors form first vertically stacked conductor layers and second vertically stacked conductor layers. The first vertically stacked conductor layers are proximate the second vertically stacked conductor layers, and at least one air gap is positioned between the first vertically stacked conductor layers and the second vertically stacked conductor layers. An upper semiconductor layer covers the first vertically stacked conductor layers, the air gap and the second plurality of vertically stacked conductor layers.

公开(公告)号：US08368125B2

公开(公告)日：2013-02-05

申请号：US12505580

申请日：2009-07-20

申请人： Dureseti Chidambarrao ,  Xiao Hu Liu ,  Lidija Sekaric

发明人： Dureseti Chidambarrao ,  Xiao Hu Liu ,  Lidija Sekaric

IPC分类号： H01L27/085

CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L21/823807 ,  H01L21/82385 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7842 ,  H01L29/7845

摘要： An electronic device includes a conductive channel defining a crystal structure and having a length and a thickness tC; and a dielectric film of thickness tg in contact with a surface of the channel. Further, the film comprises a material that exerts one of a compressive or a tensile force on the contacted surface of the channel such that electrical mobility of the charge carriers (electrons or holes) along the channel length is increased due to the compressive or tensile force in dependence on alignment of the channel length relative to the crystal structure. Embodiments are given for chips with both hole and electron mobility increased in different transistors, and a method for making such a transistor or chip.

摘要翻译： 电子器件包括限定晶体结构且具有长度和厚度tC的导电沟道; 以及与沟道的表面接触的厚度为tg的电介质膜。 此外，膜包括在通道的接触表面上施加压缩力或拉力中的一种的材料，使得沿着通道长度的电荷载流子（电子或空穴）的电迁移率由于压缩或拉伸力而增加 取决于通道长度相对于晶体结构的对准。 给出了在不同晶体管中空穴和电子迁移率增加的芯片的实施例，以及制造这种晶体管或芯片的方法。

公开(公告)号：US20120121906A1

公开(公告)日：2012-05-17

申请号：US13356778

申请日：2012-01-24

申请人： Gareth G. Hougham ,  Vijayeshwar D. Khanna ,  Xiao Hu Liu ,  Gerard McVicker

发明人： Gareth G. Hougham ,  Vijayeshwar D. Khanna ,  Xiao Hu Liu ,  Gerard McVicker

IPC分类号： B32B7/04 ,  B32B5/16 ,  B32B7/02

CPC分类号： B32B37/144 ,  B32B38/1866 ,  B32B2311/24 ,  Y10T428/249971 ,  Y10T428/2982

摘要： Methods for the fabrication of negative coefficient thermal expansion engineered elements, and particularly, wherein such elements provide for fillers possessing a low or even potentially zero coefficient thermal expansion and which are employable as fillers for polymers possessing high coefficients of thermal expansion. Further, disclosed are novel structures, which are obtained by the inventive methods.

摘要翻译： 用于制造负系数热膨胀工程元件的方法，特别地，其中这些元件提供具有低或甚至潜在的零系数热膨胀的填料，并且其可用作具有高热膨胀系数的聚合物的填料。 此外，公开了通过本发明方法获得的新颖结构。

公开(公告)号：US07955952B2

公开(公告)日：2011-06-07

申请号：US12174994

申请日：2008-07-17

申请人： Xiao Hu Liu ,  Chih-Chao Yang ,  Haining Sam Yang

发明人： Xiao Hu Liu ,  Chih-Chao Yang ,  Haining Sam Yang

IPC分类号： H01L29/00 ,  H01L21/00

CPC分类号： H01L23/585 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit chip and a method of fabricating an integrated circuit chip. The integrated circuit chip includes: a continuous first stress ring proximate to a perimeter of the integrated circuit chip, respective edges of the first stress ring parallel to respective edges of the integrated circuit chip; a continuous second stress ring between the first stress ring and the perimeter of the integrated circuit chip, respective edges the second stress ring parallel to respective edges of the integrated circuit chip, the first and second stress rings having opposite internal stresses; a continuous gap between the first stress ring and the second stress ring; and a set of wiring levels from a first wiring level to a last wiring level on the substrate.

摘要翻译： 集成电路芯片和制造集成电路芯片的方法。 集成电路芯片包括：接近集成电路芯片的周边的连续的第一应力环，第一应力环的相应边缘平行于集成电路芯片的相应边缘; 所述第一应力环与所述集成电路芯片的周边之间的连续的第二应力环，所述第二应力环平行于所述集成电路芯片的相应边缘的相应边缘，所述第一和第二应力环具有相反的内应力; 第一应力环和第二应力环之间的连续间隙; 以及从基板上的第一布线电平到最后布线电平的一组布线电平。

公开(公告)号：US07883919B2

公开(公告)日：2011-02-08

申请号：US12497903

申请日：2009-07-06

申请人： Gareth Geoffrey Hougham ,  S. Jay Chey ,  James Patrick Doyle ,  Xiao Hu Liu ,  Christopher V. Jahnes ,  Paul Alfred Lauro ,  Nancy C. LaBianca ,  Michael J. Rooks

发明人： Gareth Geoffrey Hougham ,  S. Jay Chey ,  James Patrick Doyle ,  Xiao Hu Liu ,  Christopher V. Jahnes ,  Paul Alfred Lauro ,  Nancy C. LaBianca ,  Michael J. Rooks

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/44

CPC分类号： B81B3/0035 ,  H01L2924/0002 ,  Y10T428/249986 ,  H01L2924/00

摘要： A method for fabricating a negative thermal expanding system device includes coating a wafer with a thermally decomposable polymer, patterning the decomposable polymer into repeating disk patterns, releasing the decomposable polymer from the wafer and forming a sheet of repeating patterned disks, suspending the sheet into a first solution with seeding compounds for electroless decomposition, removing the sheet from the first solution, suspending the sheet into a second solution to electrolessly deposit a first layer material onto the sheet, removing the sheet from the second solution, suspending the sheet into a third solution to deposit a second layer of material having a lower TCE value than the first layer of material, separating the patterned disks from one another, and annealing thermally the patterned disks to decompose the decomposable polymer and creating a cavity in place of the decomposable polymer.

摘要翻译： 一种制造负热膨胀系统装置的方法包括用可热分解的聚合物涂覆晶片，将可分解的聚合物图案化成重复的圆盘图案，将可分解的聚合物从晶片上释放出来并形成一张重复图案的圆盘，将薄片悬挂在 用于无电解分解的接种化合物的第一溶液，从第一溶液中除去片材，将片材悬浮在第二溶液中以将第一层材料无电沉积到片材上，从第二溶液中除去片材，将片材悬浮在第三溶液中 沉积具有比第一层材料低的TCE值的第二层材料，将图案化的盘彼此分离，并对图案化的盘进行热退火以分解可分解聚合物并产生空腔以代替可分解的聚合物。

公开(公告)号：US20090304951A1

公开(公告)日：2009-12-10

申请号：US12542287

申请日：2009-08-17

申请人： Christos Dimitrios Dimitrakopoulos ,  Stephen McConnell Gates ,  Alfred Grill ,  Michael Wayne Lane ,  Eric Gerhard Liniger ,  Xiao Hu Liu ,  Son Van Nguyen ,  Deborah Ann Neumayer ,  Thomas McCarroll Shaw

发明人： Christos Dimitrios Dimitrakopoulos ,  Stephen McConnell Gates ,  Alfred Grill ,  Michael Wayne Lane ,  Eric Gerhard Liniger ,  Xiao Hu Liu ,  Son Van Nguyen ,  Deborah Ann Neumayer ,  Thomas McCarroll Shaw

IPC分类号： C23C16/513 ,  G21G5/00

CPC分类号： H01L21/76834 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/249953 ,  Y10T428/249969 ,  Y10T428/249979

摘要： A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.

摘要翻译： 描述了形成具有受控双轴应力的超低介电常数层的方法，其包括以下步骤：通过PECVD和旋涂方法之一形成包含Si，C，O和H的层，并在含有非常低的浓度的环境中固化该膜 的氧和水各自小于10ppm。 还通过使用介电常数不超过2.8的方法描述材料。 本发明克服了低双轴应力低于46MPa的薄膜形成问题。

公开(公告)号：US07579069B2

公开(公告)日：2009-08-25

申请号：US10702280

申请日：2003-11-06

申请人： Gareth Geoffrey Hougham ,  Xiao Hu Liu ,  S. Jay Chey ,  James Patrick Doyle ,  Joseph Zinter, Jr. ,  Michael J. Rooks ,  Brian Richard Sundlof ,  Jon Alfred Casey

发明人： Gareth Geoffrey Hougham ,  Xiao Hu Liu ,  S. Jay Chey ,  James Patrick Doyle ,  Joseph Zinter, Jr. ,  Michael J. Rooks ,  Brian Richard Sundlof ,  Jon Alfred Casey

IPC分类号： B32B15/02

CPC分类号： H01R13/2414 ,  B32B15/08 ,  H01R43/007 ,  H05K1/0271 ,  H05K3/321 ,  H05K3/325 ,  H05K2201/0218 ,  H05K2201/068 ,  Y10T428/12028 ,  Y10T428/12181 ,  Y10T428/12535 ,  Y10T428/249971 ,  Y10T428/249974 ,  Y10T428/31609

摘要： A negative coefficient of thermal expansion particle includes a first bilayer having a first bilayer inner layer and a first bilayer outer layer, and a second bilayer having a second bilayer inner layer and a second bilayer outer layer. The first and second bilayers are joined together along perimeters of the first and second bilayer outer layers and first and second bilayer inner layers, respectively. The first bilayer inner layer and the second bilayer inner layer are made of a first material and the first bilayer outer layer and the second bilayer outer layer are made of a second material. The first material has a greater coefficient of thermal expansion than that of the second material.

摘要翻译： 负系数的热膨胀粒子包括具有第一双层内层和第一双层外层的第一双层和具有第二双层内层和第二双层外层的第二双层。 第一和第二双层分别沿着第一和第二双层外层以及第一和第二双层内层的周边连接在一起。 第一双层内层和第二双层内层由第一材料制成，第一双层外层和第二双层外层由第二材料制成。 第一种材料具有比第二种材料更大的热膨胀系数。

公开(公告)号：US07556979B2

公开(公告)日：2009-07-07

申请号：US11932385

申请日：2007-10-31

申请人： Gareth Geoffrey Hougham ,  S. Jay Chey ,  James Patrick Doyle ,  Xiao Hu Liu ,  Christopher V. Jahnes ,  Paul Alfred Lauro ,  Nancy C. LaBianca ,  Michael J. Rooks

发明人： Gareth Geoffrey Hougham ,  S. Jay Chey ,  James Patrick Doyle ,  Xiao Hu Liu ,  Christopher V. Jahnes ,  Paul Alfred Lauro ,  Nancy C. LaBianca ,  Michael J. Rooks

IPC分类号： H01L21/00

CPC分类号： B81B3/0035 ,  H01L2924/0002 ,  Y10T428/249986 ,  H01L2924/00

摘要： A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called “smart materials” or “responsive materials.” Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed. These devices have the technologically useful property of volumetrically expanding upon lowering of the device temperature below the reference or processing temperature.

摘要翻译： 用于微电子封装中弹性体复合材料和导电弹性体互连的TCE补偿或CTE补偿的负热膨胀系统（NTE）装置。 本发明的一个方面提供了一种用于制造具有负热膨胀系数的微机械装置的方法，该热膨胀系数可以制成用于操纵材料的TCE的复合材料。 这些设备和这些设备制成的复合材料属于称为“智能材料”或“响应材料”的材料类别。 本发明的另一方面提供了由双重相对的双层材料构成的微器件，其中两个双层仅在外围边缘处彼此附接，并且其中双层本身处于由温度定义的参考温度下的最小应力条件 双层形成。 当器件温度降低到参考温度或加工温度以下时，这些器件具有技术上有用的特性。

公开(公告)号：US20090169886A1

公开(公告)日：2009-07-02

申请号：US11967459

申请日：2007-12-31

申请人： Gareth G. Hougham ,  Vijayeshwar D. Khanna ,  Xiao Hu Liu ,  Gerard McVicker

发明人： Gareth G. Hougham ,  Vijayeshwar D. Khanna ,  Xiao Hu Liu ,  Gerard McVicker

IPC分类号： B32B5/16 ,  B23K26/20

CPC分类号： B32B37/144 ,  B32B38/1866 ,  B32B2311/24 ,  Y10T428/249971 ,  Y10T428/2982

摘要： Methods for the fabrication of negative coefficient thermal expansion engineered elements, and particularly, wherein such elements provide for fillers possessing a low or even potentially zero coefficient thermal expansion and which are employable as fillers for polymers possessing high coefficients of thermal expansion. Further, disclosed are novel structures, which are obtained by the inventive methods.

摘要翻译： 用于制造负系数热膨胀工程元件的方法，特别地，其中这些元件提供具有低或甚至潜在的零系数热膨胀的填料，并且其可用作具有高热膨胀系数的聚合物的填料。 此外，公开了通过本发明方法获得的新颖结构。

公开(公告)号：US07491965B2

公开(公告)日：2009-02-17

申请号：US12127994

申请日：2008-05-28

申请人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

发明人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

IPC分类号： H01L47/00

CPC分类号： H01L45/1233 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666

摘要： An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

摘要翻译： 用于集成电路器件的电可重新编程保险丝（eFUSE）器件包括细长的加热器元件，围绕细长加热器元件的外表面的电绝缘衬垫，其对应于其纵向轴线，留下细长加热器的相对端 元件与第一和第二加热器电极电接触。 相变材料（PCM）围绕电绝缘衬垫的外表面的一部分，热和电绝缘层围绕PCM的外表面，其中第一和第二熔丝电极与PCM的相对端电接触。 PCM被封装在电绝缘衬垫，热和电绝缘层以及第一和第二熔丝电极中。