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    THREE DIMENSIONAL INTEGRATED CIRCUITS WITH STACKED TRANSISTORS
    11.
    发明申请
    THREE DIMENSIONAL INTEGRATED CIRCUITS WITH STACKED TRANSISTORS 审中-公开

    公开(公告)号：US20200211905A1

    公开(公告)日：2020-07-02

    申请号：US16236156

    申请日：2018-12-28

    Applicant: Intel Corporation

    Inventor： Cheng-Ying HUANG ,  Willy RACHMADY ,  Gilbert DEWEY ,  Aaron LILAK ,  Kimin JUN ,  Brennen MUELLER ,  Ehren MANNEBACH ,  Anh PHAN ,  Patrick MORROW ,  Hui Jae YOO ,  Jack T. KAVALIEROS

    IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/423

    Abstract: Embodiments herein describe techniques for a semiconductor device including a first transistor stacked above and self-aligned with a second transistor, where a shadow of the first transistor substantially overlaps with the second transistor. The first transistor includes a first gate electrode, a first channel layer including a first channel material and separated from the first gate electrode by a first gate dielectric layer, and a first source electrode coupled to the first channel layer. The second transistor includes a second gate electrode, a second channel layer including a second channel material and separated from the second gate electrode by a second gate dielectric layer, and a second source electrode coupled to the second channel layer. The second source electrode is self-aligned with the first source electrode, and separated from the first source electrode by an isolation layer. Other embodiments may be described and/or claimed.

    RESONATOR STRUCTURE ENCAPSULATION
    12.
    发明申请
    RESONATOR STRUCTURE ENCAPSULATION 审中-公开

    公开(公告)号：US20190267961A1

    公开(公告)日：2019-08-29

    申请号：US16348830

    申请日：2016-12-29

    Applicant: Intel Corporation

    Inventor： Kevin LIN ,  Kimin JUN ,  Edris MOHAMMED

    IPC: H03H3/02 ,  H03H9/17

    Abstract: The RF filters used in conventional mobile devices often include resonator structures, which often require free-standing air-gap structure to prevent mechanical vibrations of the resonator from being damped by a bulk material. A method for fabricating a resonator structure comprises depositing a non-conformal thin-film to the resonator structure to seal air gap cavities in the resonator structure.

    METAL ON BOTH SIDES WITH CLOCK GATED-POWER AND SIGNAL ROUTING UNDERNEATH
    20.
    发明申请
    METAL ON BOTH SIDES WITH CLOCK GATED-POWER AND SIGNAL ROUTING UNDERNEATH 审中-公开

    公开(公告)号：US20190122985A1

    公开(公告)日：2019-04-25

    申请号：US16227406

    申请日：2018-12-20

    Applicant: Intel Corporation

    Inventor： Donald W. NELSON ,  Patrick MORROW ,  Kimin JUN

    IPC: H01L23/528 ,  H01L23/00 ,  H01L21/768

    Abstract: A method including forming a plurality of first interconnects and a plurality of second interconnects on opposite sides of an integrated circuit device layer including a plurality of circuit devices, wherein the plurality of second interconnects include interconnects of different dimensions; and forming contact points to the second plurality of interconnects, the contact points operable for connection to an external source. An apparatus including a substrate including a plurality of first interconnects and a plurality of second interconnects on opposite sides of an integrated circuit device layer including a plurality of circuit devices, wherein the plurality of second interconnects include interconnects of different dimensions; and contact points coupled to the second plurality of interconnects, the contact points operable for connection to an external source.

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