公开(公告)号：US20140273493A1

公开(公告)日：2014-09-18

申请号：US14031975

申请日：2013-09-19

Applicant: Intermolecular, Inc.

Inventor： Ratsamee Limdulpaiboon ,  Chi-I Lang ,  Sandip Niyogi ,  J. Watanabe

IPC: H01L21/3065

CPC classification number: H01L21/76864 ,  H01L21/02005 ,  H01L21/02104 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/14 ,  H01L27/1462 ,  H01L27/14643 ,  H01L27/14698 ,  H01L29/1606 ,  H01L29/41 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated hydrogen species. The activated hydrogen species can be used to etch/clean semiconductor oxide surfaces such as silicon oxide or germanium oxide.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。 基板加热器可以安装在基板支撑件中。 运输系统移动基板支撑件并且能够定位基板。 等离子体系统可用于产生活性氢物质。 活化的氢物质可用于蚀刻/清洁半导体氧化物表面，例如氧化硅或氧化锗。

公开(公告)号：US08822313B2

公开(公告)日：2014-09-02

申请号：US13722820

申请日：2012-12-20

Applicant: Intermolecular, Inc.

Inventor： Chi-I Lang ,  Sandip Niyogi

IPC: H01L21/265 ,  H01L21/365 ,  H01L21/02

CPC classification number: H01L21/02 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00635 ,  B01J2219/0075 ,  B01J2219/00756 ,  C23C16/02 ,  C23C16/04 ,  C23C16/45525 ,  H01J37/32422 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/67207

Abstract: Embodiments provided herein describe methods and systems for processing substrates. A plasma including radical species and charged species is generated. The charged species of the plasma are collected. A substrate is exposed to the radical species of the plasma. A layer is formed on the substrate after exposing the substrate to the radical species.

Abstract translation: 本文提供的实施例描述了用于处理衬底的方法和系统。 产生包括自由基物质和带电物质的等离子体。 收集等离子体的带电物质。 衬底暴露于等离子体的自由基。 在将基板暴露于自由基物质之后，在基板上形成层。

公开(公告)号：US20140183161A1

公开(公告)日：2014-07-03

申请号：US13729407

申请日：2012-12-28

Applicant: INTERMOLECULAR, INC.

Inventor： Sandip Niyogi ,  James Tsung ,  J. Watanabe

IPC: C23F1/08 ,  C23F1/00

CPC classification number: B01J19/0046 ,  B01J2219/00427 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00536 ,  B01J2219/00596 ,  B01J2219/00745 ,  C23C16/042 ,  C23C16/50

Abstract: Embodiments provided herein describe methods and systems for processing substrates. A substrate processing tool includes a housing having a sidewall and a lid. The housing defines a processing chamber. A substrate support is configured to support a substrate within the processing chamber. A plasma generation source is coupled to the housing and in fluid communication with the processing chamber through the lid of the housing. The plasma generation source is configured to provide a plasma activated species into the processing chamber. A mask is positioned within the processing chamber to at least partially shield the substrate from the plasma activated species. The mask includes a plurality of openings configured such that when the mask is in first and second positions, the plasma activated species passes through a respective first and second of the plurality of openings and causes first and second regions on the substrate to be processed.

Abstract translation: 本文提供的实施例描述了用于处理衬底的方法和系统。 基板处理工具包括具有侧壁和盖的壳体。 壳体限定处理室。 衬底支撑件构造成支撑处理室内的衬底。 等离子体产生源通过壳体的盖连接到壳体并与处理室流体连通。 等离子体产生源被配置成将等离子体活化物质提供到处理室中。 掩模位于处理室内以至少部分地将衬底与等离子体活化物质屏蔽。 掩模包括多个开口，其被构造成使得当掩模处于第一和第二位置时，等离子体活化物质通过多个开口中相应的第一和第二开口，并且使基板上的第一和第二区域被处理。

公开(公告)号：US20140179095A1

公开(公告)日：2014-06-26

申请号：US13725812

申请日：2012-12-21

Applicant: INTERMOLECULAR, INC.

Inventor： Sandip Niyogi ,  Sean Barstow ,  Chi-I Lang

IPC: H01L21/28

CPC classification number: H01L21/28255 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

Abstract: Embodiments provided herein describe methods and systems for forming gate dielectrics for field effect transistors. A substrate including a germanium channel and a germanium oxide layer on a surface of the germanium channel is provided. A metallic layer is deposited on the germanium oxide layer. The metallic layer may be nanocrystalline or amorphous. The deposition of the metallic layer causes the germanium oxide layer to be reduced such that a metal oxide layer is formed adjacent to the germanium channel.

Abstract translation: 本文提供的实施例描述了用于形成场效应晶体管的栅极电介质的方法和系统。 提供了在锗通道的表面上包括锗通道和锗氧化物层的衬底。 金属层沉积在氧化锗层上。 金属层可以是纳米晶体或无定形的。 金属层的沉积使得氧化锗层被还原，使得邻近锗通道形成金属氧化物层。

公开(公告)号：US20140110764A1

公开(公告)日：2014-04-24

申请号：US13655838

申请日：2012-10-19

Applicant: INTERMOLECULAR INC.

Inventor： Sandip Niyogi ,  Sean Barstow ,  Dipankar Pramanik

IPC: H01L21/28 ,  H01L29/78

CPC classification number: H01L21/28202 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00635 ,  B01J2219/00745 ,  B82Y30/00 ,  C23C14/04 ,  C23C16/04 ,  C23C16/4412 ,  C23C16/45565 ,  H01J37/3244 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/28194 ,  H01L22/14 ,  H01L29/513

Abstract: Methods and apparatuses for combinatorial processing are disclosed. Methods of the present disclosure providing a substrate, the substrate comprising a plurality of site-isolated regions. Methods include forming a first capping layer on the surface of a first site-isolated region of the substrate. The methods further include forming a second capping layer on the surface of a second site-isolated region of the substrate. In some embodiments, forming the first and second capping layers include exposing the first and second site-isolated regions to a plasma induced with H2 and hydrocarbon gases. In some embodiments, methods include applying at least one subsequent process to each site-isolated region. In addition, methods include evaluating results of the films post processing.

Abstract translation: 公开了用于组合处理的方法和装置。 提供衬底的本公开的方法，所述衬底包括多个位点隔离区域。 方法包括在衬底的第一位置隔离区域的表面上形成第一覆盖层。 所述方法还包括在所述衬底的第二位置隔离区域的表面上形成第二覆盖层。 在一些实施方案中，形成第一和第二封盖层包括将第一和第二位点隔离区域暴露于由H 2和烃气体引起的等离子体。 在一些实施方案中，方法包括将至少一个后续过程应用于每个位点隔离区域。 此外，方法包括评估胶片后处理的结果。

公开(公告)号：US20160181091A1

公开(公告)日：2016-06-23

申请号：US14576853

申请日：2014-12-19

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Sergey Barabash ,  Federico Nardi ,  Dipankar Pramanik

IPC: H01L21/02

CPC classification number: H01L29/516

Abstract: Embodiments provided herein describe systems and methods for forming ferroelectric materials. A trench body may be provided. A trench may be formed in the trench body. A dielectric material and a filler material may be deposited within the trench. The filler material may be heated such that a stress is exerted on the dielectric material before the dielectric material is heated to generate a ferroelectric phase within the dielectric material. A non-contiguous layer may be formed above a substrate. A second layer including a high-k dielectric material may be formed above the first layer. The high-k dielectric material may be heated to generate a ferroelectric phase within the high-k dielectric material.

Abstract translation: 本文提供的实施例描述了用于形成铁电材料的系统和方法。 可以提供沟槽体。 可以在沟槽体中形成沟槽。 介电材料和填充材料可以沉积在沟槽内。 填充材料可以被加热，使得在介电材料被加热之前在电介质材料上施加应力以在电介质材料内产生铁电相。 可以在衬底之上形成不连续的层。 可以在第一层之上形成包括高k电介质材料的第二层。 可以加热高k介电材料以在高k电介质材料内产生铁电相。

公开(公告)号：US08987143B2

公开(公告)日：2015-03-24

申请号：US14031975

申请日：2013-09-19

Applicant: Intermolecular, Inc.

Inventor： Ratsamee Limdulpaiboon ,  Chi-I Lang ,  Sandip Niyogi ,  J. Watanabe

IPC: H01L21/302 ,  H01L21/02 ,  H01L29/66 ,  H01L27/146 ,  H01L21/283 ,  H01L29/41 ,  H01L21/3065 ,  H01L29/778 ,  H01L29/16

CPC classification number: H01L21/76864 ,  H01L21/02005 ,  H01L21/02104 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/14 ,  H01L27/1462 ,  H01L27/14643 ,  H01L27/14698 ,  H01L29/1606 ,  H01L29/41 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated hydrogen species. The activated hydrogen species can be used to etch/clean semiconductor oxide surfaces such as silicon oxide or germanium oxide.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。 基板加热器可以安装在基板支撑件中。 运输系统移动基板支撑件并且能够定位基板。 等离子体系统可用于产生活性氢物质。 活化的氢物质可用于蚀刻/清洁半导体氧化物表面，例如氧化硅或氧化锗。

公开(公告)号：US20140315331A1

公开(公告)日：2014-10-23

申请号：US14205078

申请日：2014-03-11

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Shuogang Huang ,  Chi-I Lang

IPC: H01L21/66 ,  H01L21/306

CPC classification number: H01L22/12 ,  H01L21/02052 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/67051 ,  H01L21/6708 ,  H01L22/20 ,  H01L22/26

Abstract: Candidate wet processes for native oxide removal from, and passivation of, germanium surfaces can be screened by high-productivity combinatorial variation of different process parameters on different site-isolated regions of a single substrate. Variable process parameters include the choice of hydrohalic acid used to remove the native oxide, the concentration of the acid in the solution, the exposure time, and the use of an optional sulfur passivation step. Measurements to compare the results of the process variations include attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR), contact angle, atomic force microscopy (AFM), scanning electron microscopy (SEM), and X-ray fluorescence (XRF). A sample screening experiment indicated somewhat less native oxide regrowth using HCl or HBr without sulfur passivation, compared to using HF with sulfur passivation.

Abstract translation: 可以通过在单个衬底的不同位置分离区域上的不同工艺参数的高生产率组合变化来筛选锗表面的自然氧化物去除和钝化的候选湿法。 可变工艺参数包括用于去除天然氧化物的氢卤酸的选择，溶液中酸的浓度，暴露时间以及使用任选的硫钝化步骤。 用于比较过程变化结果的测量包括衰减全反射傅立叶变换红外光谱（ATR-FTIR），接触角，原子力显微镜（AFM），扫描电子显微镜（SEM）和X射线荧光（XRF）。 与使用具有硫钝化的HF相比，样品筛选实验表明使用没有硫钝化的HCl或HBr较少的天然氧化物再生长。

公开(公告)号：US08821987B2

公开(公告)日：2014-09-02

申请号：US13717478

申请日：2012-12-17

Applicant: Intermolecular, Inc.

Inventor： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang ,  Sandip Niyogi

IPC: H05H1/00 ,  C23C16/00 ,  C23C16/50 ,  B44C1/22

CPC classification number: C23C16/50 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/4584

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber, a remote plasma source, and a showerhead. Inert gas ports within the showerhead assembly can be used to alter the concentration and energy of reactive radical or reactive neutral species generated by the remote plasma source in different regions of the showerhead. This allows the showerhead to be used to apply a surface treatment to different regions of the surface of a substrate. Varying parameters such as the remote plasma parameters, the inert gas flows, pressure, and the like allow different regions of the substrate to be treated in a combinatorial manner.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括外室，远程等离子体源和喷头。 喷头组件内的惰性气体端口可用于改变由喷头的不同区域中的远程等离子体源产生的反应性基团或反应中性物质的浓度和能量。 这允许使用喷头来对表面的不同区域进行表面处理。 诸如远程等离子体参数，惰性气体流量，压力等的不同参数允许以组合的方式处理衬底的不同区域。

公开(公告)号：US20140179113A1

公开(公告)日：2014-06-26

申请号：US13722820

申请日：2012-12-20

Applicant: INTERMOLECULAR, INC.

Inventor： Chi-I Lang ,  Sandip Niyogi

IPC: H01L21/02

CPC classification number: H01L21/02 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00635 ,  B01J2219/0075 ,  B01J2219/00756 ,  C23C16/02 ,  C23C16/04 ,  C23C16/45525 ,  H01J37/32422 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/67207

Abstract: Embodiments provided herein describe methods and systems for processing substrates. A plasma including radical species and charged species is generated. The charged species of the plasma are collected. A substrate is exposed to the radical species of the plasma. A layer is formed on the substrate after exposing the substrate to the radical species.

Abstract translation: 本文提供的实施例描述了用于处理衬底的方法和系统。 产生包括自由基物质和带电物质的等离子体。 收集等离子体的带电物质。 衬底暴露于等离子体的自由基。 在将基板暴露于自由基物质之后，在基板上形成层。