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公开(公告)号:US20120231582A1
公开(公告)日:2012-09-13
申请号:US13477740
申请日:2012-05-22
申请人: Georg Meyer-Berg
发明人: Georg Meyer-Berg
IPC分类号: H01L21/56
CPC分类号: H01L21/565 , H01L23/3107 , H01L23/49816 , H01L23/4985 , H01L23/5389 , H01L24/19 , H01L24/83 , H01L24/96 , H01L24/97 , H01L25/105 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2224/211 , H01L2224/32245 , H01L2224/73267 , H01L2224/83192 , H01L2224/83855 , H01L2224/92 , H01L2224/97 , H01L2225/1035 , H01L2225/1058 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2224/96 , H01L2224/82 , H01L2924/3512 , H01L2924/00 , H01L2224/83
摘要: A device including a semiconductor chip and method. One embodiment provides a method of manufacturing a module, including providing a first device having a first semiconductor chip and a plurality of first external contact elements electrically coupled to the first semiconductor chip. The method further includes providing a second device having a second semiconductor chip, a plurality of second external contact elements and a metal layer including a first face and a second face opposite to the first face, the first face of the metal layer facing the second semiconductor chip and the second face of the metal layer facing the plurality of second external contact elements. The first external contact elements are soldered to the first face of the metal layer.
摘要翻译: 一种包括半导体芯片和方法的装置。 一个实施例提供了一种制造模块的方法,包括提供具有电耦合到第一半导体芯片的第一半导体芯片和多个第一外部接触元件的第一器件。 所述方法还包括提供具有第二半导体芯片,多个第二外部接触元件和金属层的第二器件,所述金属层包括第一面和与所述第一面相对的第二面,所述金属层的面向所述第二半导体的所述第一面 并且金属层的面向多个第二外部接触元件的第二面。 第一外部接触元件被焊接到金属层的第一面。
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公开(公告)号:US08264085B2
公开(公告)日:2012-09-11
申请号:US12115191
申请日:2008-05-05
申请人: Georg Meyer-Berg
发明人: Georg Meyer-Berg
IPC分类号: H01L23/48
CPC分类号: H01L23/5389 , H01L24/19 , H01L24/97 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2224/211 , H01L2224/32245 , H01L2224/73267 , H01L2224/8203 , H01L2224/92244 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2224/83 , H01L2924/00
摘要: A semiconductor device. In one embodiment the device includes a carrier. A first material is deposited on the carrier. The first material has an elastic modulus of less than 100 MPa. A semiconductor chip is placed over the first material. A second material is deposited on the semiconductor chip, the second material being electrically insulating. A metal layer is placed over the second material.
摘要翻译: 半导体器件。 在一个实施例中,该装置包括载体。 第一种材料沉积在载体上。 第一种材料的弹性模量小于100MPa。 将半导体芯片放置在第一材料上。 第二材料沉积在半导体芯片上,第二材料是电绝缘的。 将金属层放置在第二材料上。
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公开(公告)号:US20100207227A1
公开(公告)日:2010-08-19
申请号:US12371646
申请日:2009-02-16
申请人: Georg Meyer-Berg
发明人: Georg Meyer-Berg
IPC分类号: H01L31/0203 , H01L21/784
CPC分类号: H01L24/19 , H01L21/561 , H01L21/568 , H01L21/78 , H01L23/3114 , H01L23/3171 , H01L23/3178 , H01L24/96 , H01L24/97 , H01L2221/68359 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2224/211 , H01L2224/24051 , H01L2224/24226 , H01L2224/24246 , H01L2224/291 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2224/82101 , H01L2224/82104 , H01L2224/83801 , H01L2224/8384 , H01L2224/92244 , H01L2224/97 , H01L2924/01005 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01068 , H01L2924/01074 , H01L2924/01082 , H01L2924/12041 , H01L2924/12044 , H01L2924/14 , H01L2924/1461 , H01L2924/15153 , H01L2924/15311 , H01L2924/15747 , H01L2224/82 , H01L2924/014 , H01L2924/00
摘要: This application relates to a method of manufacturing a semiconductor device comprising providing a semiconductor wafer with the semiconductor wafer defining a first main face and a second main face opposite to the first main face; forming trenches in the first main face of the semiconductor wafer; forming a dielectric layer over the first main face and in the trenches; thinning the semiconductor wafer by removing semiconductor material from the second main face of the semiconductor wafer after the forming of the dielectric layer; and singulating at least one semiconductor chip from the semiconductor wafer along lines defined by the trenches.
摘要翻译: 本申请涉及一种制造半导体器件的方法,包括:提供半导体晶片,半导体晶片限定第一主面和与第一主面相对的第二主面; 在半导体晶片的第一主面中形成沟槽; 在所述第一主面和所述沟槽中形成介电层; 在形成电介质层之后,从半导体晶片的第二主面去除半导体材料来使半导体晶片变薄; 以及沿着由沟槽限定的线从半导体晶片划分至少一个半导体芯片。
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公开(公告)号:US09123544B2
公开(公告)日:2015-09-01
申请号:US13278681
申请日:2011-10-21
申请人: Georg Meyer-Berg , Christian Birzer
发明人: Georg Meyer-Berg , Christian Birzer
IPC分类号: H01L23/48 , H01L23/52 , H01L29/40 , H01L23/00 , H01L23/522 , H01L23/528
CPC分类号: H01L24/05 , H01L23/5226 , H01L23/528 , H01L24/13 , H01L2224/0235 , H01L2224/02375 , H01L2224/0401 , H01L2224/05008 , H01L2224/05012 , H01L2224/05014 , H01L2224/05552 , H01L2224/05557 , H01L2224/05562 , H01L2224/05567 , H01L2224/05569 , H01L2224/05572 , H01L2224/056 , H01L2224/0579 , H01L2224/058 , H01L2224/13007 , H01L2224/13022 , H01L2224/13027 , H01L2224/131 , H01L2924/00014 , H01L2924/00012 , H01L2924/014
摘要: An electrical device includes a semiconductor chip. The semiconductor chip includes a routing line. An insulating layer is arranged over the semiconductor chip. A solder deposit is arranged over the insulating layer. A via extends through an opening of the insulating layer to electrically connect the routing line to the solder deposit. A front edge line portion of the via facing the routing line is substantially straight, has a concave curvature or has a convex curvature of a diameter greater than a maximum lateral dimension of the via.
摘要翻译: 电气装置包括半导体芯片。 半导体芯片包括布线线。 绝缘层布置在半导体芯片的上方。 在绝缘层上方布置有焊料沉积物。 通孔延伸穿过绝缘层的开口以将布线线电连接到焊料沉积物。 面向路线线的通孔的前边缘线部分基本上是直的,具有凹曲率或具有大于通孔的最大横向尺寸的直径的凸曲率。
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公开(公告)号:US20130099383A1
公开(公告)日:2013-04-25
申请号:US13278681
申请日:2011-10-21
申请人: Georg Meyer-Berg , Christian Birzer
发明人: Georg Meyer-Berg , Christian Birzer
IPC分类号: H01L23/48 , H01L21/768
CPC分类号: H01L24/05 , H01L23/5226 , H01L23/528 , H01L24/13 , H01L2224/0235 , H01L2224/02375 , H01L2224/0401 , H01L2224/05008 , H01L2224/05012 , H01L2224/05014 , H01L2224/05552 , H01L2224/05557 , H01L2224/05562 , H01L2224/05567 , H01L2224/05569 , H01L2224/05572 , H01L2224/056 , H01L2224/0579 , H01L2224/058 , H01L2224/13007 , H01L2224/13022 , H01L2224/13027 , H01L2224/131 , H01L2924/00014 , H01L2924/00012 , H01L2924/014
摘要: An electrical device includes a semiconductor chip. The semiconductor chip includes a routing line. An insulating layer is arranged over the semiconductor chip. A solder deposit is arranged over the insulating layer. A via extends through an opening of the insulating layer to electrically connect the routing line to the solder deposit. A front edge line portion of the via facing the routing line is substantially straight, has a concave curvature or has a convex curvature of a diameter greater than a maximum lateral dimension of the via.
摘要翻译: 电气装置包括半导体芯片。 半导体芯片包括布线线。 绝缘层布置在半导体芯片的上方。 在绝缘层上方布置有焊料沉积物。 通孔延伸穿过绝缘层的开口以将布线线电连接到焊料沉积物。 面向路线线的通孔的前边缘线部分基本上是直的,具有凹曲率或具有大于通孔的最大横向尺寸的直径的凸曲率。
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公开(公告)号:US20120286413A1
公开(公告)日:2012-11-15
申请号:US13103124
申请日:2011-05-09
申请人: Georg Meyer-Berg , Frank Daeche
发明人: Georg Meyer-Berg , Frank Daeche
CPC分类号: H01L24/18 , H01L21/48 , H01L23/04 , H01L23/13 , H01L23/3128 , H01L23/36 , H01L23/49822 , H01L23/49827 , H01L23/5384 , H01L24/05 , H01L24/06 , H01L24/32 , H01L25/0655 , H01L25/18 , H01L2224/0557 , H01L2224/06181 , H01L2224/08235 , H01L2224/32245 , H01L2924/00014 , H01L2924/01322 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/1431 , H01L2924/15153 , H01L2924/15311 , H01L2924/00 , H01L2224/05552
摘要: An integrated circuit package includes a package module formed from successive build-up layers which define circuit interconnections, a cavity formed on a top-side of the package module, a chip having a front side with forward contacts and having a back-side, the chip disposed such that in the cavity such that at least one forward contact is electrically connected to at least one of the circuit interconnections of the package module, and a top layer coupled to the back-side of the chip covering at least a part of the chip and the top-side of the package module.
摘要翻译: 集成电路封装包括由限定电路互连的连续堆积层形成的封装模块,形成在封装模块的顶侧上的空腔,具有正面触头并具有背面的正面的芯片, 芯片设置成使得在腔中使得至少一个正向触点电连接到封装模块的至少一个电路互连,并且耦合到芯片的背面的顶层覆盖至少一部分 芯片和封装模块的顶端。
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公开(公告)号:US08183677B2
公开(公告)日:2012-05-22
申请号:US12324420
申请日:2008-11-26
申请人: Georg Meyer-Berg
发明人: Georg Meyer-Berg
IPC分类号: H01L23/02
CPC分类号: H01L21/565 , H01L23/3107 , H01L23/49816 , H01L23/4985 , H01L23/5389 , H01L24/19 , H01L24/83 , H01L24/96 , H01L24/97 , H01L25/105 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2224/211 , H01L2224/32245 , H01L2224/73267 , H01L2224/83192 , H01L2224/83855 , H01L2224/92 , H01L2224/97 , H01L2225/1035 , H01L2225/1058 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2224/96 , H01L2224/82 , H01L2924/3512 , H01L2924/00 , H01L2224/83
摘要: A device including a semiconductor chip. One embodiment provides a device, including a metal layer having a first layer face. A semiconductor chip includes a first chip face. The semiconductor chip is electrically coupled to and placed over the metal layer with the first chip face facing the first layer face. An encapsulation material covers the first layer face and the semiconductor chip. At least one through-hole extends from the first layer face through the encapsulation material. The at least one through-hole is accessible from outside the device.
摘要翻译: 一种包括半导体芯片的装置。 一个实施例提供一种装置,包括具有第一层面的金属层。 半导体芯片包括第一芯片面。 半导体芯片电耦合到金属层上并放置在金属层上,其中第一芯片面朝向第一层面。 封装材料覆盖第一层面和半导体芯片。 至少一个通孔从第一层面延伸穿过封装材料。 至少一个通孔可从设备的外部进入。
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公开(公告)号:US20110193217A1
公开(公告)日:2011-08-11
申请号:US12701779
申请日:2010-02-08
申请人: Georg Meyer-Berg
发明人: Georg Meyer-Berg
CPC分类号: H01L23/5389 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/3121 , H01L24/19 , H01L24/20 , H01L24/29 , H01L24/96 , H01L24/97 , H01L2221/68345 , H01L2224/0401 , H01L2224/04026 , H01L2224/04105 , H01L2224/05548 , H01L2224/05571 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/12105 , H01L2224/13022 , H01L2224/13024 , H01L2224/20 , H01L2224/29011 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29311 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/2949 , H01L2224/83192 , H01L2224/83193 , H01L2224/8384 , H01L2224/83855 , H01L2224/83905 , H01L2224/97 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/0132 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10329 , H01L2924/12044 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2924/15724 , H01L2924/15738 , H01L2924/15747 , H01L2224/82 , H01L2924/00 , H01L2924/01015 , H01L2924/01026 , H01L2924/01028 , H01L2924/01083 , H01L2924/3512 , H01L2224/13111 , H01L2924/00014 , H01L2224/05552
摘要: Metal particles are applied to a metal foil. A semiconductor chip is placed over the metal foil with contact elements of the semiconductor chip facing the metal particles. The metal particles are heated and the metal foil is structured after heating the metal particles.
摘要翻译: 将金属颗粒施加到金属箔上。 将半导体芯片放置在金属箔上,其半导体芯片的接触元件面向金属颗粒。 金属颗粒被加热并且金属箔在加热金属颗粒之后被构造。
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公开(公告)号:US20100230766A1
公开(公告)日:2010-09-16
申请号:US12402912
申请日:2009-03-12
申请人: Klaus Elian , Georg Meyer-Berg , Horst Theuss
发明人: Klaus Elian , Georg Meyer-Berg , Horst Theuss
CPC分类号: H01L21/563 , G01L9/0054 , G01L19/0627 , G01L19/141 , G01L19/147 , G01L19/148 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/1461 , H01L2924/16151 , H01L2924/16152 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要: A sensor device and method. One embodiment provides a first semiconductor chip having a sensing region. A porous structure element is attached to the first semiconductor chip. A first region of the porous structure element faces the sensing region of the first semiconductor chip. An encapsulation material partially encapsulates the first semiconductor chip and the porous structure element.
摘要翻译: 传感器装置及方法。 一个实施例提供了具有感测区域的第一半导体芯片。 多孔结构元件附接到第一半导体芯片。 多孔结构元件的第一区域面向第一半导体芯片的感测区域。 封装材料部分地封装第一半导体芯片和多孔结构元件。
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公开(公告)号:US20100127386A1
公开(公告)日:2010-05-27
申请号:US12324420
申请日:2008-11-26
申请人: Georg Meyer-Berg
发明人: Georg Meyer-Berg
IPC分类号: H01L21/60 , H01L23/498
CPC分类号: H01L21/565 , H01L23/3107 , H01L23/49816 , H01L23/4985 , H01L23/5389 , H01L24/19 , H01L24/83 , H01L24/96 , H01L24/97 , H01L25/105 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2224/211 , H01L2224/32245 , H01L2224/73267 , H01L2224/83192 , H01L2224/83855 , H01L2224/92 , H01L2224/97 , H01L2225/1035 , H01L2225/1058 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2224/96 , H01L2224/82 , H01L2924/3512 , H01L2924/00 , H01L2224/83
摘要: A device including a semiconductor chip. One embodiment provides a device, including a metal layer having a first layer face. A semiconductor chip includes a first chip face. The semiconductor chip is electrically coupled to and placed over the metal layer with the first chip face facing the first layer face. An encapsulation material covers the first layer face and the semiconductor chip. At least one through-hole extends from the first layer face through the encapsulation material. The at least one through-hole is accessible from outside the device.
摘要翻译: 一种包括半导体芯片的装置。 一个实施例提供一种装置,包括具有第一层面的金属层。 半导体芯片包括第一芯片面。 半导体芯片电耦合到金属层上并放置在金属层上,其中第一芯片面朝向第一层面。 封装材料覆盖第一层面和半导体芯片。 至少一个通孔从第一层面延伸穿过封装材料。 至少一个通孔可从设备的外部进入。
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