公开(公告)号：US06734468B2

公开(公告)日：2004-05-11

申请号：US08866129

申请日：1997-05-30

申请人： Toshiya Uemura ,  Naoki Shibata ,  Shizuyo Noiri ,  Shigemi Horiuchi

发明人： Toshiya Uemura ,  Naoki Shibata ,  Shizuyo Noiri ,  Shigemi Horiuchi

IPC分类号： H01L3300

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/06 ,  H01L29/452 ,  H01L2224/05073 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/0101 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/1033 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： An electrode pad for a Group III nitride compound semiconductor having p-type conduction includes a triple layer structure having first, second, and third metal layers, formed on an electrode layer. A protection film with a window exposing a central portion of the third metal layer is formed by etching on the third metal layer and covers the sides of the first, second, and third metal layers. The second metal layer is made of gold (Au). The first metal layer is made of an element which has ionization potential lower than gold (Au). The third metal is made of an element which has adhesiveness to the protection film stronger than that of gold (Au). Consequently, this structure of the electrode pad improves the adhesive strength between the protection layer and the third meal layer and prevents the etching of the sides of the protection film. Furthermore, the contact resistance between the semiconductor and the electrode pad is lowered and, thus, ohmic characteristic of the electrode pad is improved.

摘要翻译： 具有p型导电的III族氮化物化合物半导体的电极焊盘包括形成在电极层上的具有第一，第二和第三金属层的三层结构。 通过在第三金属层上蚀刻并覆盖第一，第二和第三金属层的侧面，形成具有暴露第三金属层的中心部分的窗口的保护膜。 第二金属层由金（Au）制成。 第一金属层由电离电位低于金（Au）的元素制成。 第三金属由对金（Au）的保护膜具有更强的粘合性的元素制成。 因此，电极焊盘的这种结构提高了保护层和第三层之间的粘合强度，并且防止了保护膜的侧面的蚀刻。 此外，半导体和电极焊盘之间的接触电阻降低，因此提高了电极焊盘的欧姆特性。

公开(公告)号：US06573117B2

公开(公告)日：2003-06-03

申请号：US10053570

申请日：2002-01-24

申请人： Toshiya Uemura ,  Naoki Shibata ,  Shizuyo Noiri ,  Masanori Murakami ,  Yasuo Koide ,  Jun Ito

发明人： Toshiya Uemura ,  Naoki Shibata ,  Shizuyo Noiri ,  Masanori Murakami ,  Yasuo Koide ,  Jun Ito

IPC分类号： H01L2100

CPC分类号： H01L33/42 ,  H01L33/0095 ,  H01L33/32

摘要： A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.

公开(公告)号：US06500689B2

公开(公告)日：2002-12-31

申请号：US09819622

申请日：2001-03-29

申请人： Toshiya Uemura ,  Naoki Shibata ,  Shizuyo Noiri ,  Masanori Murakami ,  Yasuo Koide ,  Jun Ito

发明人： Toshiya Uemura ,  Naoki Shibata ,  Shizuyo Noiri ,  Masanori Murakami ,  Yasuo Koide ,  Jun Ito

IPC分类号： H01L2128

CPC分类号： H01L33/42 ,  H01L33/0095 ,  H01L33/32

摘要： A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.

摘要翻译： 通过气相沉积在p +层上形成包含钴（Co）的层，并且在其上形成包含金（Au）的层。 通过热处理将两层合金化以形成透光电极。 因此，透光电极具有降低的接触电阻和改善的透光性，并且给出了长时间稳定的发光图案。 此外，由于钴（Co）是具有大功函数的元素，因此获得令人满意的欧姆特性。

公开(公告)号：US07291868B2

公开(公告)日：2007-11-06

申请号：US10564416

申请日：2004-08-20

申请人： Masanobu Ando ,  Masahito Nakai ,  Toshiya Uemura ,  Masaaki Nakayama

发明人： Masanobu Ando ,  Masahito Nakai ,  Toshiya Uemura ,  Masaaki Nakayama

IPC分类号： H01L29/24

CPC分类号： B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/32 ,  H01S5/183 ,  H01S5/3086 ,  H01S5/3409 ,  H01S5/34333 ,  H01S2304/04

摘要： In layer structure 20 of a semiconductor laser of a surface emitting type, 21 and 24 represent an n-type contact layer made of n-type GaN and a p-layer made of p-type AlGaN, respectively. In the laser, an n-type DBR layer 22 made of n-type InGaN and a DBR layer 25 made of dielectric are formed on and below a InGaN active layer 23, respectively, each of which forms a reflection surface vertical to the z axis. By forming a reflection surface vertical to the z axis at each of on and above the active layer 23, a resonator is obtained. Here optical distance between two reflection facets are arranged to an integral multiple of half a oscillation wavelength. Consequently, the present invention enables to produce a semiconductor laser of a surface emitting type easier by far compared with a conventional invention.

摘要翻译： 在表面发射型半导体激光器的层结构20中，21和24分别表示由n型GaN制成的n型接触层和由p型AlGaN制成的p层。 在激光器中，分别在InGaN有源层23的下方形成由n型InGaN构成的n型DBR层22和由电介质形成的DBR层25，各层形成与z轴垂直的反射面 。 通过在有源层23的上方形成与z轴垂直的反射面，得到共振器。 这里，两个反射面之间的光学距离被设置为振荡波长的一半的整数倍。 因此，与现有技术相比，本发明能够制造出比现有技术更容易的表面发射型半导体激光器。

公开(公告)号：US20070228409A1

公开(公告)日：2007-10-04

申请号：US11730687

申请日：2007-04-03

申请人： Toshiya Uemura

发明人： Toshiya Uemura

IPC分类号： H01L33/00 ,  H01L29/24

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/52 ,  H01L2224/48091 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/00014

摘要： To provide a light emitting element that can extract substantially all the light emitted from a luminous layer structure to the outside, a GaN substrate and a luminous layer structure are formed by growing III nitride compound semiconductor on a sapphire substrate that is a growth substrate. Thereafter, the sapphire substrate is lifted off and minute irregularities are formed on the exposed GaN substrate. The pitch of irregularities is shorter than the wavelength of light emitted from the luminous layer structure.

摘要翻译： 为了提供可将基本上从发光层结构发出的所有光提取到外部的发光元件，通过在作为生长衬底的蓝宝石衬底上生长III族氮化物化合物半导体来形成GaN衬底和发光层结构。 此后，蓝宝石衬底被剥离，并且在暴露的GaN衬底上形成微小的凹凸。 不规则的间距比从发光层结构发出的光的波长短。

公开(公告)号：US07138662B2

公开(公告)日：2006-11-21

申请号：US10664081

申请日：2003-09-17

申请人： Toshiya Uemura

发明人： Toshiya Uemura

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  H01L33/505 ,  H01L33/508 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00014

摘要： A light-emitting device including: a semiconductor light-emitting element using a substrate surface as a light-extracting surface; and a mount frame on which the semiconductor light-emitting element is mounted and which has a reflecting portion for reflecting light emitted from the substrate surface; wherein the mount frame has a swollen portion formed so that part of the substrate surface of the light-emitting element is supported by the swollen portion.

摘要翻译： 一种发光装置，包括：使用基板表面作为光提取表面的半导体发光元件; 以及安装框架，其上安装有半导体发光元件，并且具有用于反射从基板表面发射的光的反射部分; 其中，所述安装框架具有形成为使得所述发光元件的所述基板表面的一部分由所述溶胀部支撑的隆起部。

公开(公告)号：US07078252B2

公开(公告)日：2006-07-18

申请号：US11130153

申请日：2005-05-17

申请人： Toshiya Uemura

发明人： Toshiya Uemura

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/12 ,  H01L33/22 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/48247

摘要： A III group nitride system compound semiconductor light emitting element has: a transparent substrate with a concave portion on the surface; a filling material that is embedded in the concave portion; and a III group nitride system compound semiconductor layer that is formed on the surface of the transparent substrate. The filling material has a refractive index substantially equal to that of the III group nitride system compound semiconductor layer or closer to that of the III group nitride system compound semiconductor layer than that of the transparent substrate.

摘要翻译： III族氮化物系化合物半导体发光元件具有：在表面上具有凹部的透明基板; 填充材料，其嵌入在所述凹部中; 以及形成在所述透明基板的表面上的III族氮化物系化合物半导体层。 填充材料的折射率基本上等于III族氮化物系化合物半导体层的折射率，或者比III族氮化物系化合物半导体层的折射率高于透明基板的折射率。

公开(公告)号：US20060108603A1

公开(公告)日：2006-05-25

申请号：US11245448

申请日：2005-10-07

申请人： Toshiya Uemura ,  Katsuhisa Sawazaki ,  Masahito Nakai ,  Yuhei Ikemoto

发明人： Toshiya Uemura ,  Katsuhisa Sawazaki ,  Masahito Nakai ,  Yuhei Ikemoto

IPC分类号： H01L29/739

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/025 ,  H01L33/06

摘要： In a group III nitride compound semiconductor light emitting device comprising an n-type semiconductor layer, a p-type semiconductor layer having a superlattice structure in which a first layer comprising at least Al and a second layer having a different composition from that of the first layer are laminated repetitively, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein an Al composition of the first layer which is the closest to the active layer is set to be lower than that of each of the other first layers, and wherein a doping amount of a p-type impurity in the first layer which is the closest to the active layer is set to be smaller than that of the p-type impurity of each of the other first layers or non-doped.

公开(公告)号：US06831305B2

公开(公告)日：2004-12-14

申请号：US10119113

申请日：2002-04-10

申请人： Takemasa Yasukawa ,  Toshiya Uemura ,  Hideki Mori

发明人： Takemasa Yasukawa ,  Toshiya Uemura ,  Hideki Mori

IPC分类号： H01L3300

CPC分类号： H01L25/167 ,  H01L2224/48091 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A group III nitride compound semiconductor light-emitting element of a flip chip bonding type for emitting light with a wavelength not longer than 400 nm is coupled to a Zener diode, and the light-emitting element and the Zener diode coupled to each other are sealed with a metal casing having a window.

摘要翻译： 用于发射波长不超过400nm的光的倒装芯片接合型的III族氮化物化合物半导体发光元件被耦合到齐纳二极管，并且彼此耦合的发光元件和齐纳二极管被密封 具有窗口的金属外壳。

公开(公告)号：US06649941B2

公开(公告)日：2003-11-18

申请号：US09977939

申请日：2001-10-17

申请人： Toshiya Uemura

发明人： Toshiya Uemura

IPC分类号： H01L2924

CPC分类号： H01L33/0095 ,  H01L23/3107 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/17 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L24/94 ,  H01L25/0753 ,  H01L33/52 ,  H01L33/54 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/81801 ,  H01L2224/85399 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13064 ,  H01L2924/181 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A flip-chip-type device is formed from a plurality of flip-chip semiconductor device units integrated together on a common substrate having a Group III nitride compound semiconductor layer. A sealing resin is laminated on a surface of the common substrate cured, and the substrate is then divided into individual sealed flip-chip semiconductor devices. Because the positive and negative electrodes are formed on the same side of the devices, the sealing resin need only be applied to the side of the substrate on which the electrodes are formed. Metal pillars may be formed on the electrodes and extend through the cured resin to electrically connect the flip-type semiconductor device to an external source and produce a self-contained package.