公开(公告)号：US09935250B2

公开(公告)日：2018-04-03

申请号：US14782698

申请日：2014-04-03

Applicant: OSRAM Opto Semiconductors Gmbh

Inventor： Frank Singer ,  Jürgen Moosburger ,  Thomas Schwarz

IPC: H01L33/62 ,  H01L33/48 ,  H01L33/50 ,  H01L33/54

CPC classification number: H01L33/62 ,  H01L33/486 ,  H01L33/502 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00012 ,  H01L2224/4554

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip embodied as a volume emitter, wherein the optoelectronic semiconductor chip is embedded into an optically transparent molded body, a soldering contact is arranged at an underside of the molded body, a bonding wire forms an electrically conductive connection between an electrical contact area of the optoelectronic semiconductor chip and the soldering contact, and the bonding wire is embedded into the molded body.

公开(公告)号：US20170365749A1

公开(公告)日：2017-12-21

申请号：US15543881

申请日：2016-01-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Wolfgang Mönch ,  Britta Göötz ,  Frank Singer ,  Martin Straßburg ,  Tilman Schimpke

IPC: H01L33/50 ,  G02F1/1335 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60 ,  H01L33/48

Abstract: An optoelectronic arrangement having a radiation conversion element and a method for producing a radiation conversion element are disclosed. In an embodiment, an optoelectronic arrangement includes a semiconductor chip having an active region configured to generate radiation, a radiation conversion element arranged downstream of the semiconductor chip in an emission direction and a reflective polarization element arranged downstream of the radiation conversion element in the emission direction. The radiation conversion element has a plurality of conversion elements, each of which has an axis of symmetry, the spatial orientation of the axes of symmetry has a preferred direction and a radiation emitted by the radiation conversion element has a preferred polarization. The reflective polarization element largely allows radiation with the preferred polarization to pass through and largely reflects radiation polarized perpendicularly to the preferred polarization.

公开(公告)号：US09837591B2

公开(公告)日：2017-12-05

申请号：US14888770

申请日：2014-05-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schwarz ,  Frank Singer ,  Alexander Linkov ,  Stefan Illek ,  Wolfgang Mönch

IPC: H01L33/60 ,  H01L33/58 ,  H01L33/48 ,  H01L33/62 ,  H01L33/54 ,  H01L33/46 ,  H01L23/00 ,  H01L33/00 ,  H01L25/075

CPC classification number: H01L33/62 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/0095 ,  H01L33/46 ,  H01L33/486 ,  H01L33/54 ,  H01L33/58 ,  H01L33/60 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2224/4554

Abstract: A radiation-emitting semiconductor device includes at least one semiconductor chip having a semiconductor layer sequence having an active region that produces radiation; a mounting surface on which at least one electrical contact for external contacting of the semiconductor chip is formed, wherein the mounting surface runs parallel to a main extension plane of the semiconductor layer sequence; a radiation exit surface running at an angle to or perpendicularly to the mounting surface; a radiation-guiding layer arranged in a beam path between the semiconductor chip and the radiation exit surface; and a reflector body adjacent to the radiation-guiding layer in regions and in a top view of the semiconductor device covers the semiconductor chip.

公开(公告)号：US09691741B2

公开(公告)日：2017-06-27

申请号：US15100559

申请日：2015-01-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Matthias Sabathil ,  Frank Singer ,  Roland Hüttinger

IPC: H01L25/075 ,  H01L33/00 ,  F21K9/90 ,  H01L33/58 ,  H01L33/50 ,  H01L33/56 ,  H01L23/00 ,  F21Y103/10 ,  F21Y115/10

CPC classification number: H01L25/0753 ,  F21K9/90 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/97 ,  H01L33/0095 ,  H01L33/502 ,  H01L33/56 ,  H01L33/58 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32227 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2224/97 ,  H01L2924/15159 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0091 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/0781 ,  H01L2224/83

Abstract: A method for producing optoelectronic semiconductor components and an optoelectronic semiconductor component are disclosed. In an embodiment the method includes: A) creating a blank by pultrusion from a glass melt, B) shaping the blank into a billet-shaped optical element with a longitudinal axis, the optical element having a mounting side and a light outlet side, C) producing conductor tracks on the mounting side, D) mounting a plurality of optoelectronic semiconductor chips on the mounting side of the optical element and connecting them to the conductor tracks and E) separating the optical element into the optoelectronic semiconductor components, wherein each optoelectronic semiconductor component comprises at least two of the semiconductor chips, and wherein at least steps A) to D) are performed in the stated sequence.

公开(公告)号：US09515242B2

公开(公告)日：2016-12-06

申请号：US14399967

申请日：2013-04-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Frank Singer

IPC: H01L33/00 ,  H01L33/64 ,  F21K99/00 ,  H01L33/50 ,  F21V9/16 ,  F21V29/70 ,  H01L33/62 ,  H01L25/075 ,  H01L33/48 ,  F21Y101/02 ,  F21Y105/00

CPC classification number: H01L33/644 ,  F21K9/64 ,  F21V9/30 ,  F21V29/70 ,  F21Y2101/00 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/005 ,  H01L33/483 ,  H01L33/486 ,  H01L33/50 ,  H01L33/507 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0075 ,  H01L2924/00

Abstract: An optoelectronic component may include a carrier element having a heat sink, at least one semiconductor chip for emitting electromagnetic radiation which is mounted and electrically contact-connected on the carrier element, a radiation-transmissive cover disposed downstream of the at least one semiconductor chip, a converter layer applied on the radiation-transmissive cover and spaced apart from the at least one semiconductor chip, a frame composed of thermally conductive material, which frame extends around the at least one semiconductor chip and is in direct contact with the converter layer, and at least one connecting element for thermally connecting the frame to the heat sink.

公开(公告)号：US20160315231A1

公开(公告)日：2016-10-27

申请号：US15104434

申请日：2014-12-15

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  OSRAM GMBH

Inventor： Britta Göötz ,  Frank Singer ,  Roland Hüttinger

IPC: H01L33/50

CPC classification number: H01L33/504 ,  H01L33/505 ,  H01L2933/0041

Abstract: A conversion element includes a platelet including an inorganic glass, and first converter particles having a shell and a core, wherein the shell includes an inorganic material and the core includes a nitride or oxynitride luminescent material and the first converter particles are arranged on and/or in the platelet.

Abstract translation: 转换元件包括含有无机玻璃的片晶和具有壳和芯的第一转化器颗粒，其中所述壳包括无机材料，并且所述芯包括氮化物或氧氮化物发光材料，并且所述第一转化器颗粒被布置在和/或 在血小板中

公开(公告)号：US20160273736A1

公开(公告)日：2016-09-22

申请号：US15035384

申请日：2014-11-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Ion Stoll ,  Frank Singer ,  Georg Dirscherl

IPC: F21V9/08 ,  C25D13/00 ,  G02B5/02 ,  H01L33/50 ,  H01S5/00

CPC classification number: F21V9/08 ,  C25D13/00 ,  G02B5/0268 ,  G02B5/0294 ,  H01L33/505 ,  H01L2933/0041 ,  H01L2933/0091 ,  H01S5/005 ,  H05B33/10 ,  H05B33/14

Abstract: A method for producing a multifunctional layer, a method for producing an electrophoresis substrate, and a method for producing a converter plate and an optoelectronic component are disclosed. In an embodiment the method includes providing an electrophoresis substrate comprising a carrier having a front side and a back side, wherein a first electrically conductive layer and a second electrically conductive layer are located on the front side, electrophoretically depositing a first material onto the first electrically conductive layer, electrophoretically depositing a second material onto the second electrically conductive layer and arranging a filler material between the first material and the second material, wherein the filler material forms a common boundary surface with the first material and the second material.

Abstract translation: 公开了多功能层的制造方法，电泳基板的制造方法以及转换器板和光电子部件的制造方法。 在一个实施方案中，该方法包括提供包括具有前侧和后侧的载体的电泳基片，其中第一导电层和第二导电层位于前侧，将第一材料电泳沉积到第一电 导电层，将第二材料电泳沉积到第二导电层上并在第一材料和第二材料之间布置填充材料，其中填充材料与第一材料和第二材料形成共同的边界面。

公开(公告)号：US20150115304A1

公开(公告)日：2015-04-30

申请号：US14399967

申请日：2013-04-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Frank Singer

IPC: H01L33/64 ,  H01L33/00 ,  H01L33/62 ,  H01L33/48 ,  H01L33/50

CPC classification number: H01L33/644 ,  F21K9/64 ,  F21V9/30 ,  F21V29/70 ,  F21Y2101/00 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/005 ,  H01L33/483 ,  H01L33/486 ,  H01L33/50 ,  H01L33/507 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0075 ,  H01L2924/00

Abstract: An optoelectronic component may include a carrier element having a heat sink, at least one semiconductor chip for emitting electromagnetic radiation which is mounted and electrically contact-connected on the carrier element, a radiation-transmissive cover disposed downstream of the at least one semiconductor chip, a converter layer applied on the radiation-transmissive cover and spaced apart from the at least one semiconductor chip, a frame composed of thermally conductive material, which frame extends around the at least one semiconductor chip and is in direct contact with the converter layer, and at least one connecting element for thermally connecting the frame to the heat sink.

Abstract translation: 光电子部件可以包括具有散热器的载体元件，用于发射安装并电接触连接在载体元件上的电磁辐射的至少一个半导体芯片，设置在至少一个半导体芯片下游的辐射透射盖， 转换器层，其施加在所述辐射透射罩上并且与所述至少一个半导体芯片间隔开，由导热材料构成的框架，所述框架围绕所述至少一个半导体芯片延伸并且与所述转换器层直接接触;以及 用于将框架热连接到散热器的至少一个连接元件。

公开(公告)号：US12057676B2

公开(公告)日：2024-08-06

申请号：US17294816

申请日：2019-11-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schwarz ,  Andreas Plößl ,  Jörg Erich Sorg ,  Frank Singer

IPC: H01S5/02255 ,  H01S5/02 ,  H01S5/02208 ,  H01S5/02234 ,  H01S5/028 ,  H01S5/40

CPC classification number: H01S5/02208 ,  H01S5/0201 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/02234 ,  H01S5/02255 ,  H01S5/028 ,  H01S5/4031

Abstract: In one embodiment, the method serves for producing semiconductor lasers and includes the following steps in the order indicated: A) applying a multiplicity of edge emitting laser diodes on a mounting substrate, B) applying an encapsulation element, such that the laser diodes are applied in each case in a cavity between the mounting substrate and the associated encapsulation element, C) operating the laser diodes and determining emission directions of the laser diodes, D) producing material damage in partial regions of the encapsulation element, wherein the partial regions are uniquely assigned to the laser diodes, E) collectively removing material of the encapsulation element, said material being affected by the material damage, with the result that individual optical surfaces for beam shaping arise for the laser diodes in the partial regions, and F) singulating to form the semiconductor lasers.

公开(公告)号：US11513275B2

公开(公告)日：2022-11-29

申请号：US17474975

申请日：2021-09-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Peter Brick ,  Jean-Jacques Drolet ,  Hubert Halbritter ,  Laura Kreiner ,  Thomas Schwarz ,  Tilman Ruegheimer ,  Frank Singer

IPC: F21V8/00 ,  G02B27/01 ,  H01L25/075

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.