公开(公告)号：US20180219135A1

公开(公告)日：2018-08-02

申请号：US15747188

申请日：2016-07-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Leirer ,  Thomas Schwarz ,  Lutz Höppel

IPC: H01L33/48 ,  H01L33/62 ,  H01L33/44 ,  H01L33/30

CPC classification number: H01L33/486 ,  H01L33/30 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/11 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: A component having a metal carrier and a method for producing a component are disclosed. In an embodiment the component includes a carrier having a metallic carrier layer, an insulating layer and a first through-contact extending in a vertical direction throughout the carrier layer, wherein the through-contact is electrically isolated from the carrier layer via the insulating layer. The component further includes a semiconductor body and a wiring structure arranged in the vertical direction between the carrier and the semiconductor body at least places and electrically contacting the semiconductor body, wherein the wiring structure has a first connection area and a second connection area, wherein the connection areas adjoin the carrier and are assigned to different electrical polarities of the component, wherein the first through-contact is in electrical contact with one of the connection areas, and wherein the component is configured to be externally electrically connectable via the carrier.

公开(公告)号：US09761770B2

公开(公告)日：2017-09-12

申请号：US14760454

申请日：2014-01-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johann Eibl ,  Sebastian Taeger ,  Lutz Höppel ,  Karl Engl ,  Stefanie Rammelsberger ,  Markus Maute ,  Michael Huber ,  Rainer Hartmann ,  Georg Hartung

IPC: H01L33/00 ,  H01L33/54 ,  H01L33/44 ,  H01L33/60 ,  H01L33/62 ,  H01L21/02 ,  H01L33/52 ,  H01L33/40

CPC classification number: H01L33/54 ,  G01B2210/306 ,  H01L21/0228 ,  H01L33/405 ,  H01L33/44 ,  H01L33/52 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/181 ,  H01L2933/005 ,  H01L2924/00

Abstract: An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.

公开(公告)号：US09653440B2

公开(公告)日：2017-05-16

申请号：US14432302

申请日：2013-10-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jürgen Moosburger ,  Lutz Höppel ,  Norwin von Malm

IPC: H01L33/00 ,  H01L21/00 ,  H01L25/16 ,  H01L33/62 ,  H01L29/861 ,  H01L33/54 ,  H01L33/56 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L21/683

CPC classification number: H01L25/167 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3157 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L29/861 ,  H01L33/54 ,  H01L33/56 ,  H01L33/62 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/03334 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/036 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05147 ,  H01L2224/05647 ,  H01L2224/11002 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13147 ,  H01L2224/291 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32145 ,  H01L2224/73203 ,  H01L2224/83005 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/83851 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/92143 ,  H01L2224/94 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/00

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip having a first surface on which a first electrical contact and a second electrical contact are arranged, wherein the first surface adjoins a molded body, a first pin and a second pin are embedded in the molded body and electrically conductively connect to the first contact and the second contact, and a protection diode is embedded in the molded body and electrically conductively connect to the first contact and the second contact.

公开(公告)号：US20160172546A1

公开(公告)日：2016-06-16

申请号：US14906581

申请日：2014-07-23

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Jürgen Moosburger ,  Lutz Höppel

IPC: H01L33/48 ,  H01L33/60 ,  H01L33/22 ,  H01L33/62

CPC classification number: H01L33/483 ,  H01L33/22 ,  H01L33/60 ,  H01L33/62

Abstract: An optoelectronic semiconductor chip includes a carrier and a semiconductor body having an active layer that generates electromagnetic radiation, wherein the semiconductor body is arranged on the carrier, the semiconductor body has a first main surface facing away from the carrier and a second main surface facing the carrier, the semiconductor chip has a side surface having an anchoring structure, and the second main surface is arranged between the first main surface and the anchoring structure.

Abstract translation: 光电子半导体芯片包括载体和具有产生电磁辐射的有源层的半导体本体，其中半导体本体布置在载体上，半导体本体具有背离载体的第一主表面和与载体相对的第二主表面 半导体芯片具有具有锚定结构的侧表面，并且第二主表面布置在第一主表面和锚定结构之间。

公开(公告)号：US10985292B2

公开(公告)日：2021-04-20

申请号：US16488571

申请日：2018-03-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lutz Höppel

IPC: H01L21/46 ,  H01L23/58 ,  H01L33/00 ,  H01L33/56 ,  H01L33/62

Abstract: A method for transferring semiconductor bodies and a semiconductor chip are disclosed. In an embodiment a method includes providing a semiconductor structure on a growth substrate, arranging a cover layer on a side of the semiconductor structure facing away from the growth substrate, wherein the cover layer is mechanically fixedly connected to the semiconductor structure, arranging a transfer structure on a side of the cover layer facing away from the semiconductor structure, wherein the transfer structure is mechanically fixedly connected to the cover layer via at least one contact structure, wherein a sacrificial layer is arranged between the cover layer and the transfer structure, and wherein the sacrificial layer does not cover any of the at least one contact structure, removing the growth substrate from the semiconductor structure, subdividing the semiconductor structure into a plurality of semiconductor bodies, arranging a carrier on a side of the semiconductor body facing away from the transfer structure, selectively removing the sacrificial layer and removing the transfer structure from the semiconductor bodies.

公开(公告)号：US10586788B2

公开(公告)日：2020-03-10

申请号：US15484499

申请日：2017-04-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jürgen Moosburger ,  Lutz Höppel ,  Norwin von Malm

IPC: H01L25/16 ,  H01L33/62 ,  H01L23/00 ,  H01L29/861 ,  H01L33/54 ,  H01L33/56 ,  H01L23/31 ,  H01L21/56 ,  H01L21/683

Abstract: A method of producing an optoelectronic component includes providing an optoelectronic semiconductor chip having a first surface on which a first electrical contact and a second electrical contact are arranged; arranging a protection diode on the first contact and the second contact; galvanically growing a first pin on the first electrical contact and a second pin on the second electrical contact; and embedding the first pin, the second pin, and the protection diode in a molded body.

公开(公告)号：US10573787B2

公开(公告)日：2020-02-25

申请号：US16081159

申请日：2017-03-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lutz Höppel

IPC: H01L33/46 ,  H01L33/40 ,  H01L33/20

Abstract: A light-emitting semiconductor chip and a method for producing a light-emitting semiconductor chip are disclosed. In an embodiment a light-emitting chip includes a semiconductor body having an active region designed to generate light, a dielectric mirror including an electrically insulating material and a first metallic mirror including an electrically conductive material, wherein the semiconductor body expands towards a light exit side, wherein the dielectric mirror is arranged on a side of the semiconductor body facing away from the light exit side, wherein the first metallic mirror is arranged on a side of the dielectric mirror facing away from the semiconductor body, wherein the first metallic mirror electrically contacts the semiconductor body through at least one opening in the dielectric mirror, and wherein the dielectric mirror, apart from the at least one opening, completely covers the semiconductor body on the side facing away from the light exit side.

公开(公告)号：US20190131497A1

公开(公告)日：2019-05-02

申请号：US16092507

申请日：2017-04-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lutz Höppel

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/44 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L33/405 ,  H01L25/0753 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/44 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: An optoelectronic semiconductor chip includes a semiconductor body including a first semiconductor region, a second semiconductor region and an active zone disposed between the first and second semiconductor regions, an electrically conductive contact layer arranged on a side of the first semiconductor region facing away from the second semiconductor region, and an electrically conductive mirror layer arranged between the first semiconductor region and the electrically conductive contact layer, and laterally protruding at the edge by the first semiconductor region and the electrically conductive contact layer so that between the first semiconductor region and the electrically conductive contact layer there is an interspace in which a protective layer is arranged for protecting the mirror layer, wherein the electrically conductive contact layer extends laterally to an edge of the first semiconductor region, and the electrically conductive contact layer consists of Ni.

公开(公告)号：US20170069800A1

公开(公告)日：2017-03-09

申请号：US15120457

申请日：2015-02-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Göötz ,  Frank Singer ,  Lutz Höppel ,  Jürgen Moosburger

IPC: H01L33/48 ,  H01L33/62 ,  H01L33/50

CPC classification number: H01L33/486 ,  H01L33/005 ,  H01L33/505 ,  H01L33/52 ,  H01L33/62 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0066

Abstract: A method for producing optoelectronic semiconductor components (100) is specified, wherein a carrier (1) having a carrier main side (11) is provided. Furthermore, a plurality of singulated optoelectronic semiconductor chips (2) are provided, wherein the semiconductor chips (2) each have a main emission side (21) and a contact side (22) opposite the main emission side (21). The singulated semiconductor chips (2) are then applied to the carrier main side (11), such that the contact side (22) in each case faces the carrier main side (11). In regions between the semiconductor chips, a mask frame (3) is applied, wherein the mask frame (3) is a grid of partitions (31). In a plan view of the carrier main side (11), each semiconductor chip (2) is surrounded all around by the partitions (31). The semiconductor chips (2) are potted with a conversion material (4) such that a conversion element is respectively formed on the semiconductor chips (2). In this case, the conversion element (41) at least partly cover's the main emission side (21) of the respective semiconductor chip (2). The carrier (1) is then removed. In a further step, the optoelectronic semiconductor components (100) are detached from the mask frame (3), the mask frame (3) being destroyed.

Abstract translation: 规定了制造光电子半导体部件（100）的方法，其中，设置有具有载体主侧（11）的载体（1）。 此外，提供了多个单独的光电半导体芯片（2），其中半导体芯片（2）各自具有主发射侧（21）和与主发射侧（21）相对的接触侧（22）。 然后将单片半导体芯片（2）施加到载体主侧（11），使得接触侧（22）各自面向载体主侧（11）。 在半导体芯片之间的区域中，应用掩模框架（3），其中掩模框架（3）是隔板格（31）。 在载体主侧（11）的俯视图中，每个半导体芯片（2）被隔板（31）围绕。 半导体芯片（2）用转换材料（4）封装，使得转换元件分别形成在半导体芯片（2）上。 在这种情况下，转换元件（41）至少部分覆盖相应的半导体芯片（2）的主发射侧（21）。 然后移除载体（1）。 在另一步骤中，将光电子半导体部件（100）从掩模框架（3）分离，掩模框架（3）被破坏。

公开(公告)号：US20160218261A1

公开(公告)日：2016-07-28

申请号：US15021091

申请日：2014-08-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Jürgen Moosburger ,  Ion Stoll ,  Thomas Schwarz ,  Frank Singer ,  Georg Dirscherl ,  Lutz Höppel

IPC: H01L33/60 ,  H01L33/56

CPC classification number: H01L33/60 ,  H01L24/24 ,  H01L33/507 ,  H01L33/54 ,  H01L33/56 ,  H01L33/62 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0091 ,  H01L2924/00

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip including a light-transmissive carrier, a semiconductor layer sequence on the light-transmissive carrier and electrical connection points on a bottom portion remote from the light-transmissive carrier of the semiconductor layer sequence, a light-transmissive encapsulating material enclosing the optoelectronic semiconductor chip in places, and particles of a light-scattering and/or light-reflecting material, wherein the bottom of the semiconductor layer sequence is at least in places free of the light-transmissive encapsulating material, and the particles cover the bottom of the semiconductor layer sequence and an outer face of the encapsulating material in places.

Abstract translation: 光电子半导体部件包括：光电子半导体芯片，其包含透光性载体，透光性载体上的半导体层序列和远离半导体层序列的透光性载体的底部的电连接点; 封装光电子半导体芯片的透射性封装材料，以及光散射和/或光反射材料的颗粒，其中半导体层序列的底部至少在没有透光封装材料的位置，并且 颗粒在位置覆盖半导体层序列的底部和封装材料的外表面。