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    Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
    14.
    发明授权
    Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip 有权
    光电子半导体芯片和光电子半导体芯片的制造方法

    公开(公告)号：US09293640B2

    公开(公告)日：2016-03-22

    申请号：US14418424

    申请日：2013-06-11

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Joachim Hertkorn ,  Lorenzo Zini ,  Jan-Philipp Ahl ,  Alexander Frey

    IPC分类号： H01L33/00 ,  H01L29/04 ,  H01L21/00 ,  H01L21/20 ,  H01L21/02 ,  H01L33/32 ,  H01L33/10

    CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02645 ,  H01L21/02647 ,  H01L33/10 ,  H01L33/32

    摘要： In at least one embodiment, the method is designed to produce an optoelectronic semiconductor chip. The method includes at least the following steps in the stated sequence: A) providing a growth substrate with a growth side, B) depositing at least one nucleation layer based on AlxGa1-xOyN1-y on the growth side, C) depositing and structuring a masking layer, D) optionally growing a GaN-based seed layer in regions on the nucleation layer not covered by the masking layer, E) partially removing the nucleation layer and/or the seed layer in regions not covered by the masking layer or applying a second masking layer on the nucleation layer or on the seed layer in the regions not covered by the masking layer, and F) growing an AlInGaN-based semiconductor layer sequence with at least one active layer.

    摘要翻译： 在至少一个实施例中，该方法被设计为产生光电子半导体芯片。 该方法至少包括以下所述的序列中的以下步骤：A）提供具有生长侧的生长衬底，B）在生长侧上沉积至少一个基于Al x Ga 1-x O y N 1-y的成核层，C）沉积和结构化 掩模层，D）任选地在未被掩蔽层覆盖的成核层上的区域中生长GaN基种子层，E）在未被掩蔽层覆盖的区域中部分去除成核层和/或种子层，或施加 在未被掩模层覆盖的区域中的成核层或种子层上的第二掩模层，以及F）生长具有至少一个活性层的AlInGaN基半导体层序列。

    Method for Producing an Optoelectronic Semiconductor Chip and Optoelectronic Semiconductor Chip
    16.
    发明申请
    Method for Producing an Optoelectronic Semiconductor Chip and Optoelectronic Semiconductor Chip 有权

    公开(公告)号：US20210210651A1

    公开(公告)日：2021-07-08

    申请号：US17206911

    申请日：2021-03-19

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Werner Bergbauer ,  Thomas Lehnhardt ,  Jürgen Off ,  Joachim Hertkorn

    IPC分类号： H01L31/18 ,  H01L33/12 ,  H01L33/22 ,  H01L21/02 ,  H01L33/00 ,  H01L31/0304 ,  H01L33/32

    摘要： In an embodiment a method includes providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region, directly applying a nucleation layer of oxygen-containing AlN to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, wherein the nucleation layer is applied onto both the planar region and the three-dimensional surface structures of the growth surface, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.

    METHOD OF PRODUCING LIGHT-EMITTING DIODE CHIPS AND LIGHT-EMITTING DIODE CHIP
    17.
    发明申请
    METHOD OF PRODUCING LIGHT-EMITTING DIODE CHIPS AND LIGHT-EMITTING DIODE CHIP 审中-公开

    公开(公告)号：US20200235264A1

    公开(公告)日：2020-07-23

    申请号：US16489835

    申请日：2018-03-15

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Massimo Drago ,  Alexander Frey ,  Joachim Hertkorn

    IPC分类号： H01L33/22 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32

    摘要： A method of producing light-emitting diode chips includes A) and C)-F) in order: A) providing a growth substrate, C) producing a structural layer, the structural layer including Alx1Ga1-x1-y1Iny1N, where-in y1≥0.5, and a plurality of structural elements with a mean height of at least 50 nm so that a side of the structural layer facing away from the growth substrate is rough, D) producing a cover layer on the structural layer, the cover layer forming the structural layer true to shape and including Alx2Ga1-x2-y2Iny2N, wherein x2≥0.6, E) producing a planarization layer on the cover layer, a side of the finished planarization layer is flat and the planarization layer includes Alx3Ga1-x3-y3Iny3N, wherein x3+y3≤0.2, and F) growing a functional layer sequence that generates radiation on the planarization layer.

    Optoelectronic Semiconductor Chip
    19.
    发明申请
    Optoelectronic Semiconductor Chip 审中-公开

    公开(公告)号：US20190081211A1

    公开(公告)日：2019-03-14

    申请号：US16081206

    申请日：2017-07-18

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Werner Bergbauer ,  Joachim Hertkorn

    IPC分类号： H01L33/32 ,  H01L33/06

    CPC分类号： H01L33/325 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32

    摘要： An optoelectronic semiconductor chip is disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence composed of AlInGaN comprising an n-conducting n-region, a p-conducting p-region and an intermediate active zone having at least one quantum well for generating a radiation, wherein the p-region comprises an electron barrier layer, a contact layer and an intermediate decomposition stop layer, the contact layer being directly adjacent to a contact metallization, wherein the decomposition stop layer comprises an aluminum content of at least 5% and at most 30% in places, wherein an intermediate region arranged between the electron barrier layer and the decomposition stop layer has a thickness between 2 nm and 15 nm inclusive, the intermediate region being free of aluminum, and wherein the aluminum content in the decomposition stop layer varies and increases on average in a direction towards the contact layer.