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公开(公告)号：US20200251547A1
公开(公告)日：2020-08-06
申请号：US16856139
申请日：2020-04-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masakatsu OHNO , Hiroki ADACHI , Satoru IDOJIRI , Koichi TAKESHIMA
IPC: H01L27/32 , H01L51/00 , H01L51/56 , H01L51/52 , H01L27/12 , H01L29/24 , H01L29/66 , H01L29/786 , B23K26/0622 , B23K26/04 , B23K26/06 , B23K26/08
Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
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公开(公告)号：US20180061638A1
公开(公告)日：2018-03-01
申请号：US15687855
申请日：2017-08-28
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masataka SATO , Naoki IKEZAWA , Junpei YANAKA , Satoru IDOJIRI
CPC classification number: H01L31/1892 , H01L21/02345 , H01L21/02488 , H01L21/02694 , H01L21/6835 , H01L27/1266 , H01L29/66969 , H01L31/1896 , H01L51/003 , H01L2221/68386 , H01L2224/83052 , H01L2924/35121
Abstract: The yield of a manufacturing process of a semiconductor device is increased. The productivity of a semiconductor device is increased. A first material layer is formed over a substrate, a second material layer is formed over the first material layer, and the first material layer and the second material layer are separated from each other, so that a semiconductor device is manufactured. In addition, a stack including the first material layer and the second material layer is preferably heated before the separation. The first material layer includes one or more of hydrogen, oxygen, and water. The first material layer includes a metal oxide, for example. The second material layer includes a resin (e.g., polyimide or acrylic). The first material layer and the second material layer are separated from each other by cutting a hydrogen bond. The first material layer and the second material layer are separated from each other in such a manner that water separated out by heat treatment at an interface between the first material layer and the second material layer or in the vicinity of the interface is irradiated with light.
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公开(公告)号：US20170334187A1
公开(公告)日：2017-11-23
申请号：US15610890
申请日：2017-06-01
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kayo KUMAKURA , Tomoya AOYAMA , Akihiro CHIDA , Kohei YOKOYAMA , Masakatsu OHNO , Satoru IDOJIRI , Hisao IKEDA , Hiroki ADACHI , Yoshiharu HIRAKATA , Shingo EGUCHI , Yasuhiro JINBO
IPC: B32B43/00 , H01L21/67 , H01L51/56 , G02B6/00 , B26D1/04 , B26D1/00 , H01L27/32 , H01L27/12 , B32B38/10
CPC classification number: B32B43/006 , B26D1/04 , B26D2001/006 , B32B38/10 , B32B2457/00 , G02B6/00 , H01L21/67092 , H01L27/1248 , H01L27/3258 , H01L27/3262 , H01L51/56 , H01L2221/68327 , H01L2227/323 , H01L2251/5338 , Y10T156/1126 , Y10T156/1132 , Y10T156/1168 , Y10T156/1179 , Y10T156/1184 , Y10T156/1928 , Y10T156/1933 , Y10T156/1944 , Y10T156/1961 , Y10T156/1967 , Y10T156/1989
Abstract: A processing apparatus of a stack is provided. The stack includes two substrates attached to each other with a gap provided between their end portions. The processing apparatus includes a fixing mechanism that fixes part of the stack, a plurality of adsorption jigs that fix an outer peripheral edge of one of the substrates of the stack, and a wedge-shaped jig that is inserted into a corner of the stack. The plurality of adsorption jigs include a mechanism that allows the adsorption jigs to move separately in a vertical direction and a horizontal direction. The processing apparatus further includes a sensor sensing a position of the gap between the end portion in the stack. A tip of the wedge-shaped jig moves along a chamfer formed on an end surface of the stack. The wedge-shaped jig is inserted into the gap between the end portions in the stack.
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公开(公告)号：US20170133450A1
公开(公告)日：2017-05-11
申请号：US15416166
申请日：2017-01-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masakatsu OHNO , Hiroki ADACHI , Satoru IDOJIRI , Koichi TAKESHIMA
CPC classification number: H01L27/3272 , B23K26/04 , B23K26/0617 , B23K26/0622 , B23K26/0643 , B23K26/0648 , B23K26/083 , H01L27/1225 , H01L27/1266 , H01L27/322 , H01L27/3244 , H01L27/3258 , H01L27/3262 , H01L29/24 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L41/314 , H01L51/0024 , H01L51/0027 , H01L51/003 , H01L51/0097 , H01L51/5096 , H01L51/5246 , H01L51/5253 , H01L51/5284 , H01L51/56 , H01L2227/323 , H01L2227/326 , H01L2251/5338 , H01L2251/558 , Y02E10/549 , Y02P70/521
Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
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公开(公告)号：US20170021394A1
公开(公告)日：2017-01-26
申请号：US15302260
申请日：2015-04-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Masakatsu OHNO , Kayo KUMAKURA , Satoru IDOJIRI , Yoshiharu HIRAKATA , Kohei YOKOYAMA
CPC classification number: B08B1/006 , B08B11/00 , B25J11/0085 , B25J15/0206 , B32B37/0046 , B32B37/02 , B32B38/162 , B32B38/18 , B32B39/00 , H01L21/02 , H01L21/02096 , H01L21/67046 , H01L21/67092 , H01L21/7806
Abstract: An object is to eliminate a harmful effect when a film is bonded by wiping an adhering sealant (30a). Characterized is a wiping device (200) including a stage (230) that supports a sheet-like member (220), a wiping means (210) that wipes an adhering object (30a) adhering on a peripheral portion of the sheet-like member (220), a wiping cloth (241) that is attachably and detachably provided for the wiping means (210), and a solvent (261) that adheres to the wiping cloth (241), in which the wiping means (210) is provided with the wiping cloth (241), makes the solvent (261) adhere to the wiping cloth (241), and wipes the adhering object (30a), or a stack manufacturing apparatus (1000) including such a wiping device (200).
Abstract translation: 目的是通过擦拭粘合的密封剂（30a）来粘合薄膜来消除有害影响。 特征在于包括支撑片状构件（220）的台（230）的擦拭装置（200），擦拭附着在片状构件（220）的周边部分上的粘附物（30a）的擦拭装置 （220），可擦拭装置（210）可拆卸地设置的擦拭布（241）和粘附到所述擦拭布（241）的溶剂（261），其中设置有擦拭装置（210） 通过擦拭布（241）将溶剂（261）粘附到擦拭布（241）上，并擦拭粘附物（30a）或包括这种擦拭装置（200）的叠层制造装置（1000）。
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Patent Agency Ranking
公开(公告)号：US20150314424A1
公开(公告)日：2015-11-05
申请号：US14696515
申请日：2015-04-27
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kayo KUMAKURA , Satoru IDOJIRI , Masakatsu OHNO , Koichi TAKESHIMA , Yoshiharu HIRAKATA , Kohei YOKOYAMA
CPC classification number: B25B11/005 , B29C53/18 , B29L2007/002 , H01L21/68742 , H01L21/6875
Abstract: A film-like member is supported in a flat shape by vacuum suction. A plurality of lift pins are arranged in a planar configuration and bear a film-like member placed on their upper ends. Tubular pads made of rubber for holding the film-like member by vacuum suction are attached to upper portions of the lift pins. The height of the lift pins can be adjusted by a screw fastening mechanism. The deformation of the film-like member can be corrected to a flat or concavely curved shape by suction from the pads. When the correction cannot be achieved by suction alone, the correction may be supplemented by ejection of air from a nozzle.
Abstract translation: 膜状构件通过真空抽吸被支撑为平坦的形状。 多个提升销布置成平面构造并且承载放置在其上端的薄膜状构件。 由橡胶制成的用于通过真空吸附保持膜状构件的管状垫被附接到提升销的上部。 提升销的高度可以通过螺钉固定机构进行调整。 膜状构件的变形可以通过从衬垫的抽吸来校正为平坦或凹形弯曲的形状。 当仅通过抽吸不能实现校正时，可以通过从喷嘴喷出空气来补充校正。
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公开(公告)号：US20200273936A1
公开(公告)日：2020-08-27
申请号：US16872819
申请日：2020-05-12
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masakatsu OHNO , Hiroki ADACHI , Satoru IDOJIRI , Koichi TAKESHIMA
IPC: H01L27/32 , B23K26/04 , B23K26/08 , H01L51/00 , H01L29/786 , B23K26/06 , H01L27/12 , B23K26/0622 , H01L51/52 , H01L29/24 , H01L51/56 , H01L29/66
Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
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公开(公告)号：US20200235323A1
公开(公告)日：2020-07-23
申请号：US16842820
申请日：2020-04-08
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Masakatsu OHNO , Kayo KUMAKURA , Hiroyuki WATANABE , Seiji YASUMOTO , Satoru IDOJIRI , Hiroki ADACHI
Abstract: The yield of a separation process is improved. The mass productivity of a display device which is formed through a separation process is improved. A layer is formed over a substrate with use of a material including a resin or a resin precursor. Next, a resin layer is formed by performing heat treatment on the layer. Next, a layer to be separated is formed over the resin layer. Then, the layer to be separated and the substrate are separated from each other. The heat treatment is performed in an atmosphere containing oxygen or while supplying a gas containing oxygen.
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公开(公告)号：US20170278878A1
公开(公告)日：2017-09-28
申请号：US15463487
申请日：2017-03-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hideaki KUWABARA , Hiroki ADACHI , Satoru IDOJIRI
IPC: H01L27/12 , H01L21/683 , H01L21/67
Abstract: A technique is described in which a transistor formed using an oxide semiconductor film, a transistor formed using a polysilicon film, a transistor formed using an amorphous silicon film or the like, a transistor formed using an organic semiconductor film, a light-emitting element, or a passive element is separated from a glass substrate by light or heat. An oxide layer is formed over a light-transmitting substrate, a metal layer is selectively formed over the oxide layer, a resin layer is formed over the metal layer, an element layer is formed over the resin layer, a flexible film is fixed to the element layer, the resin layer and the metal layer are irradiated with light through the light-transmitting substrate, the light-transmitting substrate is separated, and a bottom surface of the metal layer is made bare.
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公开(公告)号：US20160361913A1
公开(公告)日：2016-12-15
申请号：US15248579
申请日：2016-08-26
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Masakatsu OHNO , Hiroki ADACHI , Satoru IDOJIRI , Koichi TAKESHIMA
CPC classification number: B32B43/006 , B32B37/0053 , B32B37/025 , B32B37/12 , B32B37/1207 , B32B38/10 , B32B2037/1253 , B32B2037/268 , B32B2457/20 , B32B2457/208 , H01L27/322 , H01L27/323 , H01L27/3262 , H01L51/0013 , H01L51/003 , H01L51/524 , H01L51/5253 , H01L51/5284 , H01L51/56 , H01L2227/323 , H01L2227/326 , H01L2251/5315 , H01L2251/5338 , Y10T156/1111 , Y10T156/1174 , Y10T156/1928 , Y10T156/195
Abstract: The yield of a peeling process is improved. A peeling apparatus includes a structure body with a convex surface and a stage with a supporting surface which faces the convex surface. The structure body can hold a first member of a process member between the convex surface and the supporting surface. The stage can hold a second member of the process member. The radius of curvature of the convex surface is less than the radius of curvature of the supporting surface. The linear velocity of the convex surface is greater than or equal to the speed of a rotation center of the structure body passing the stage. The first member is wound along the convex surface to be separated from the second member.
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