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公开(公告)号：US10367096B2
公开(公告)日：2019-07-30
申请号：US15814925
申请日：2017-11-16
发明人： Shunpei Yamazaki , Shinya Sasagawa , Satoru Okamoto , Motomu Kurata , Yuta Endo
IPC分类号： H01L29/10 , H01L29/12 , H01L29/786 , H01L29/66 , H01L29/423 , H01L27/12 , H01L21/8258 , H01L27/06 , H01L21/66
摘要： A semiconductor device which includes a transistor having a miniaturized structure is provided. A first insulator is provided over a stack in which a semiconductor, a first conductor, and a second conductor are stacked in this order. Over the first insulator, an etching mask is formed. Using the etching mask, the first insulator and the second conductor are etched until the first conductor is exposed. After etching the first conductor until the semiconductor is exposed so as to form a groove having a smaller width than the second conductor, a second insulator and a third conductor are formed sequentially.
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公开(公告)号：US10164120B2
公开(公告)日：2018-12-25
申请号：US15576445
申请日：2016-05-18
IPC分类号： H01L29/786 , H01L29/66 , H01L21/8234 , H01L21/8238 , H01L21/28 , H01L29/417 , H01L29/423 , H01L29/49 , H01L27/06 , H01L27/08 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , H01L27/115 , H01L51/50 , H01L27/146 , H05B33/14 , G06F9/32 , G06K19/07 , H01L23/31 , H01L23/498 , H01L23/00 , H01L27/12 , G02F1/1368 , H01L27/32
摘要： A transistor including a semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator is manufactured by forming a hard mask layer including a fourth conductor over the second insulator, a third insulator over the fourth conductor, forming an opening portion in the second insulator with the hard mask layer as the mask, eliminating the hard mask layer by forming the opening portion, and forming the first insulator and the first conductor in the opening portion.
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公开(公告)号：US09978774B2
公开(公告)日：2018-05-22
申请号：US15420628
申请日：2017-01-31
发明人： Shunpei Yamazaki , Yuta Endo , Kiyoshi Kato , Satoru Okamoto
IPC分类号： H01L29/786 , H01L27/12 , H01L21/02 , H01L21/768 , H01L23/528 , H01L23/532 , H01L27/105 , H01L29/24 , H01L29/66
CPC分类号： H01L27/1207 , H01L21/0206 , H01L21/0214 , H01L21/02178 , H01L21/02183 , H01L21/02266 , H01L21/02271 , H01L21/0228 , H01L21/02323 , H01L21/0234 , H01L21/3105 , H01L21/31155 , H01L21/76825 , H01L21/76834 , H01L21/8258 , H01L23/528 , H01L23/53295 , H01L27/0629 , H01L27/0688 , H01L27/088 , H01L27/092 , H01L27/1052 , H01L27/1225 , H01L29/24 , H01L29/66969 , H01L29/78648 , H01L29/7869
摘要： A highly reliable semiconductor device suitable for miniaturization and high integration is provided. The semiconductor device includes a first insulator; a transistor over the first insulator; a second insulator over the transistor; a first conductor embedded in an opening in the second insulator; a barrier layer over the first conductor; a third insulator over the second insulator and over the barrier layer; and a second conductor over the third insulator. The first insulator, the third insulator, and the barrier layer have a barrier property against oxygen and hydrogen. The second insulator includes an excess-oxygen region. The transistor includes an oxide semiconductor. The barrier layer, the third insulator, and the second conductor function as a capacitor.
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公开(公告)号：US09954113B2
公开(公告)日：2018-04-24
申请号：US15017831
申请日：2016-02-08
发明人： Akihisa Shimomura , Satoru Okamoto , Yutaka Okazaki , Yoshinobu Asami , Hiroaki Honda , Takuya Tsurume
IPC分类号： H01L29/786 , H01L29/423 , H01L29/06 , H01L27/12
CPC分类号： H01L29/7869 , H01L21/385 , H01L27/1225 , H01L29/0688 , H01L29/42384 , H01L29/78696
摘要： A transistor with favorable electrical characteristics is provided. A transistor with stable electrical characteristics is provided. A semiconductor device having a high degree of integration is provided. Side surfaces of an oxide semiconductor layer in which a channel is formed are covered with an oxide semiconductor layer, whereby impurity diffusion from the side surfaces of the oxide semiconductor into the inside can be prevented. A gate electrode is formed by a damascene process, whereby transistors can be miniaturized and formed at a high density.
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公开(公告)号：US09865712B2
公开(公告)日：2018-01-09
申请号：US15056356
申请日：2016-02-29
发明人： Satoru Okamoto , Shinya Sasagawa
IPC分类号： H01L29/40 , H01L29/66 , H01L29/22 , H01L29/24 , H01L29/423 , H01L29/78 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/385 , H01L27/1207 , H01L27/1225 , H01L27/1255 , H01L29/22 , H01L29/24 , H01L29/401 , H01L29/408 , H01L29/42364 , H01L29/42376 , H01L29/78 , H01L29/786 , H01L29/7869 , H01L29/78696
摘要： A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween. The second insulator has an opening and a side surface of the second insulator overlaps with a side surface of the first conductor in the opening with the first insulator positioned therebetween. Part of a surface of the second conductor and part of a surface of the third conductor are in contact with the first insulator in the opening. The oxide semiconductor overlaps with the second conductor and the third conductor.
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公开(公告)号：US12074224B2
公开(公告)日：2024-08-27
申请号：US17591690
申请日：2022-02-03
IPC分类号： H01L29/786 , C23C16/40 , C23C16/455 , H01L21/475 , H01L21/4757 , H01L21/67 , H01L27/12 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/66 , H01L21/02
CPC分类号： H01L29/7869 , C23C16/40 , C23C16/45531 , H01L21/475 , H01L21/47573 , H01L21/67207 , H01L27/1207 , H01L27/1225 , H01L29/0649 , H01L29/41733 , H01L29/42356 , H01L29/42376 , H01L29/42384 , H01L29/66969 , H01L29/78603 , H01L29/78618 , H01L29/78696 , H01L21/02554 , H01L21/02565 , H01L21/0262
摘要： A semiconductor device includes a first oxide insulating layer over a first insulating layer, an oxide semiconductor layer over the first oxide insulating layer, a source electrode layer and a drain electrode layer over the oxide semiconductor layer, a second insulating layer over the source electrode layer and the drain electrode layer, a second oxide insulating layer over the oxide semiconductor layer, a gate insulating layer over the second oxide insulating layer, a gate electrode layer over the gate insulating layer, and a third insulating layer over the second insulating layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer. A side surface portion of the second insulating layer is in contact with the second oxide insulating layer. The gate electrode layer includes a first region and a second region. The first region has a width larger than that of the second region.
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公开(公告)号：US11943929B2
公开(公告)日：2024-03-26
申请号：US18129120
申请日：2023-03-31
摘要： A semiconductor device with a large storage capacity per unit area is provided. The semiconductor device includes a first insulator including a first opening, a first conductor that is over the first insulator and includes a second opening, a second insulator that is over the first insulator and includes a third opening, and an oxide penetrating the first opening, the second opening, and the third opening. The oxide includes a first region at least in the first opening, a second region at least in the second opening, and a third region at least in the third opening. The resistances of the first region and the third region are lower than the resistance of the second region.
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公开(公告)号：US10367005B2
公开(公告)日：2019-07-30
申请号：US15966231
申请日：2018-04-30
发明人： Shunpei Yamazaki , Yuta Endo , Kiyoshi Kato , Satoru Okamoto
IPC分类号： H01L27/12 , H01L21/02 , H01L21/768 , H01L23/528 , H01L23/532 , H01L27/105 , H01L29/24 , H01L29/66 , H01L29/786 , H01L21/8258 , H01L27/06 , H01L21/3105 , H01L21/3115 , H01L27/088 , H01L27/092
摘要： A highly reliable semiconductor device suitable for miniaturization and high integration is provided. The semiconductor device includes a first insulator; a transistor over the first insulator; a second insulator over the transistor; a first conductor embedded in an opening in the second insulator; a barrier layer over the first conductor; a third insulator over the second insulator and over the barrier layer; and a second conductor over the third insulator. The first insulator, the third insulator, and the barrier layer have a barrier property against oxygen and hydrogen. The second insulator includes an excess-oxygen region. The transistor includes an oxide semiconductor. The barrier layer, the third insulator, and the second conductor function as a capacitor.
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公开(公告)号：US09954112B2
公开(公告)日：2018-04-24
申请号：US14995562
申请日：2016-01-14
IPC分类号： H01L29/423 , H01L29/786 , H01L29/06 , H01L21/475 , H01L29/66 , H01L21/4757 , H01L21/67 , C23C16/40 , C23C16/455 , H01L27/12 , H01L21/02
CPC分类号： H01L29/7869 , C23C16/40 , C23C16/45531 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L21/475 , H01L21/47573 , H01L21/67207 , H01L27/1207 , H01L27/1225 , H01L29/0649 , H01L29/42356 , H01L29/42376 , H01L29/42384 , H01L29/66969 , H01L29/78603 , H01L29/78696
摘要： A semiconductor device includes a first oxide insulating layer over a first insulating layer, an oxide semiconductor layer over the first oxide insulating layer, a source electrode layer and a drain electrode layer over the oxide semiconductor layer, a second insulating layer over the source electrode layer and the drain electrode layer, a second oxide insulating layer over the oxide semiconductor layer, a gate insulating layer over the second oxide insulating layer, a gate electrode layer over the gate insulating layer, and a third insulating layer over the second insulating layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer. A side surface portion of the second insulating layer is in contact with the second oxide insulating layer. The gate electrode layer includes a first region and a second region. The first region has a width larger than that of the second region.
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公开(公告)号：US09922994B2
公开(公告)日：2018-03-20
申请号：US15332006
申请日：2016-10-24
发明人： Ryota Hodo , Motomu Kurata , Shinya Sasagawa , Satoru Okamoto , Shunpei Yamazaki
IPC分类号： H01L27/12 , H01L29/66 , H01L21/02 , H01L21/467 , H01L21/463 , H01L21/768 , H01L29/786 , H01L23/535 , H01L23/522 , H01L29/778 , H01L23/532
CPC分类号： H01L27/1225 , H01L21/02565 , H01L21/463 , H01L21/467 , H01L21/76895 , H01L23/5226 , H01L23/53238 , H01L23/53295 , H01L27/1288 , H01L29/66969 , H01L29/7781 , H01L29/7782 , H01L29/78603 , H01L29/7869
摘要： First to third insulators are successively formed in this order over a first conductor over a semiconductor substrate; a hard mask with a first opening is formed thereover; a resist mask with a second opening is formed thereover; a third opening is formed in the third insulator; a fourth opening is formed in the second insulator; the resist mask is removed; a fifth opening is formed in the first to third insulators; a second conductor is formed to cover an inner wall and a bottom surface of the fifth opening; a third conductor is formed thereover; polishing treatment is performed so that the hard mask is removed, and that levels of top surfaces of the second and third conductors and the third insulator are substantially equal to each other; and an oxide semiconductor is formed thereover. The second insulator is less permeable to hydrogen than the first and third insulators, the second conductor is less permeable to hydrogen than the third conductor.
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