公开(公告)号：US20180048177A1

公开(公告)日：2018-02-15

申请号：US15232443

申请日：2016-08-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tzu-Sung Huang ,  Chen-Hua Yu ,  Hao-Yi Tsai ,  Hung-Yi Kuo ,  Ming Hung Tseng

IPC分类号： H02J7/02 ,  H01F41/10 ,  H02J50/80 ,  H01L49/02 ,  H01F27/28 ,  H01F41/04 ,  H02J50/10 ,  H01F38/14

摘要： Coil structures and methods of forming are provided. The coil structure includes a substrate. A plurality of coils is disposed over the substrate, each coil comprising a conductive element that forms a continuous spiral having a hexagonal shape in a plan view of the coil structure. The plurality of coils is arranged in a honeycomb pattern, and each conductive element is electrically connected to an external electrical circuit.

公开(公告)号：US20170373004A1

公开(公告)日：2017-12-28

申请号：US15700926

申请日：2017-09-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Chiang-Jui Chu ,  Chung-Shi Liu ,  Hao-Yi Tsai ,  Ming Hung Tseng ,  Hung-Yi Kuo

IPC分类号： H01L23/522 ,  H01L25/00 ,  H01L21/56 ,  H01L21/48 ,  H01L23/498 ,  H01L23/31 ,  H01L49/02 ,  H01L25/065

CPC分类号： H01L23/5227 ,  H01L21/4846 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3157 ,  H01L23/48 ,  H01L23/498 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/5223 ,  H01L23/5389 ,  H01L24/19 ,  H01L25/0655 ,  H01L25/50 ,  H01L28/10 ,  H01L28/40 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24137 ,  H01L2224/24195 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2225/0651 ,  H01L2924/19105

摘要： A package includes a device die, and an encapsulating material encapsulating the device die therein. The encapsulating material has a top surface coplanar with a top surface of the device die. A coil extends from the top surface to a bottom surface of the encapsulating material, and the device die is in the region encircled by the coil. At least one dielectric layer is formed over the encapsulating material and the coil. A plurality of redistribution lines is in the at least one dielectric layer. The coil is electrically coupled to the device die through the plurality of redistribution lines.

公开(公告)号：US09799614B2

公开(公告)日：2017-10-24

申请号：US15243293

申请日：2016-08-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jie Chen ,  Hao-Yi Tsai ,  Hsien-Wei Chen ,  Hung-Yi Kuo

IPC分类号： H01L33/00 ,  H01L23/66 ,  H01L21/768 ,  H01L23/522 ,  H01L49/02 ,  H01L21/66 ,  G01R1/073 ,  G01R35/00 ,  G06F17/50 ,  H01L23/528 ,  H01L23/00

CPC分类号： H01L23/66 ,  G01R1/07328 ,  G01R35/005 ,  G06F17/5009 ,  H01L21/76822 ,  H01L22/34 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/5227 ,  H01L23/528 ,  H01L24/13 ,  H01L28/10 ,  H01L2223/6627 ,  H01L2224/0401 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2924/19011 ,  H01L2924/1903 ,  H01L2924/19042 ,  H01L2924/00014 ,  H01L2924/014

摘要： A method includes measuring a first calibration kit in a wafer to obtain a first performance data. The wafer includes a substrate, and a plurality of dielectric layers over the substrate. The first calibration kit includes a first passive device over the plurality of dielectric layers, wherein substantially no metal feature is disposed in the plurality of dielectric layers and overlapped by the first passive device. The method further includes measuring a second calibration kit in the wafer to obtain a second performance data. The second calibration kit includes a second passive device identical to the first device and over the plurality of dielectric layers, and dummy patterns in the plurality of dielectric layers and overlapped by the second passive device. The first performance data and the second performance data are de-embedded to determine an effect of metal patterns in the plurality of dielectric layers to overlying passive devices.

公开(公告)号：US09786591B2

公开(公告)日：2017-10-10

申请号：US15333879

申请日：2016-10-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hao-Yi Tsai ,  Hsien-Wei Chen ,  Hung-Yi Kuo ,  Tung-Liang Shao ,  Ying-Ju Chen ,  Tsung-Yuan Yu ,  Jie Chen

IPC分类号： H01L21/66 ,  H01L21/768 ,  H01L23/52 ,  H01L23/485 ,  H01L29/92 ,  H01L23/522 ,  H01L49/02 ,  H01L23/48 ,  H01L23/31 ,  H01L23/00 ,  H01L23/532 ,  H01L29/00 ,  H01L23/50 ,  H01L23/525

CPC分类号： H01L23/5223 ,  H01L21/76838 ,  H01L22/14 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/48 ,  H01L23/50 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/525 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L28/60 ,  H01L29/00 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/03622 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/13026 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2924/1205 ,  H01L2924/00014 ,  H01L2924/014

摘要： A device includes a metal pad and a passivation layer having a portion overlapping the metal pad. A capacitor includes a bottom capacitor electrode underlying the passivation layer, wherein the bottom capacitor includes the metal pad. The capacitor further includes a top capacitor electrode over the portion of the passivation layer; and a capacitor insulator including the portion of the passivation layer.

公开(公告)号：US20170243820A1

公开(公告)日：2017-08-24

申请号：US15589821

申请日：2017-05-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsien-Wei Chen ,  Hung-Yi Kuo ,  Hao-Yi Tsai ,  Tsung-Yuan Yu

IPC分类号： H01L23/522 ,  H01L21/311 ,  H01L23/58 ,  H01L21/768 ,  H01L49/02

CPC分类号： H01L23/5227 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/585 ,  H01L27/0688 ,  H01L27/08 ,  H01L28/10 ,  H01L29/0619 ,  H01L2924/0002 ,  H01L2924/00

摘要： A system and method for providing and manufacturing an inductor is provided. In an embodiment similar masks are reutilized to form differently sized inductors. For example, a two turn inductor and a three turn inductor may share masks for interconnects and coils, while only masks necessary for connections between the interconnects and coils may need to be newly developed.

公开(公告)号：US20160343794A1

公开(公告)日：2016-11-24

申请号：US15225344

申请日：2016-08-01

申请人： Taiwan Semiconductor Manufacturing Company., Ltd.

发明人： Hao-Yi Tsai ,  Hsien-Wei Chen ,  Hung-Yi Kuo ,  Tsung-Yuan Yu

IPC分类号： H01L49/02 ,  H01L29/06 ,  H01L23/522

CPC分类号： H01L23/5227 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/585 ,  H01L27/0688 ,  H01L27/08 ,  H01L28/10 ,  H01L29/0619 ,  H01L2924/0002 ,  H01L2924/00

摘要： A system and method for providing and manufacturing an inductor is provided. In an embodiment similar masks are reutilized to form differently sized inductors. For example, a two turn inductor and a three turn inductor may share masks for interconnects and coils, while only masks necessary for connections between the interconnects and coils may need to be newly developed.

摘要翻译： 提供了一种用于提供和制造电感器的系统和方法。 在一个实施例中，类似的掩模被重新利用以形成不同尺寸的电感器。 例如，两转电感器和三转电感器可以共享用于互连和线圈的掩模，而仅需要新开发互连和线圈之间的连接所需的掩模。

公开(公告)号：US20160247757A1

公开(公告)日：2016-08-25

申请号：US15144066

申请日：2016-05-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hao-Yi Tsai ,  Hsien-Wei Chen ,  Hung-Yi Kuo ,  Tung-Liang Shao ,  Ying-Ju Chen ,  Tsung-Yuan Yu ,  Jie Chen

IPC分类号： H01L23/522 ,  H01L49/02 ,  H01L23/00

CPC分类号： H01L23/5223 ,  H01L21/76838 ,  H01L22/14 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/48 ,  H01L23/50 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/525 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L28/60 ,  H01L29/00 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/03622 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/13026 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2924/1205 ,  H01L2924/00014 ,  H01L2924/014

摘要： A device includes a metal pad and a passivation layer having a portion overlapping the metal pad. A capacitor includes a bottom capacitor electrode underlying the passivation layer, wherein the bottom capacitor includes the metal pad. The capacitor further includes a top capacitor electrode over the portion of the passivation layer; and a capacitor insulator including the portion of the passivation layer.

公开(公告)号：US20160133583A1

公开(公告)日：2016-05-12

申请号：US14996889

申请日：2016-01-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsien-Wei Chen ,  Nien-Fang Wu ,  Hung-Yi Kuo ,  Jie Chen ,  Ying-Ju Chen ,  Tsung-Yuan Yu

IPC分类号： H01L23/58 ,  H01L21/768 ,  H01L21/82 ,  H01L23/522 ,  H01L23/528

CPC分类号： H01L23/585 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/82 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： In some embodiments, an integrated circuit (IC) device includes a substrate having a first functional region, a second functional region and a third functional region. The IC device also includes a plurality of dielectric layers over the substrate, a first guard ring in the plurality of dielectric layers and around the first functional region, and a second guard ring in the plurality of dielectric layers and around the second functional region. The second guard ring is separate from the first guard ring, and the third functional region is free of a guard ring. The IC device further includes a seal ring in the plurality of dielectric layers. The seal ring encircles the first and the second guard rings, and is separate from the first and the second guard rings.

摘要翻译： 在一些实施例中，集成电路（IC）装置包括具有第一功能区，第二功能区和第三功能区的衬底。 所述IC器件还包括在所述衬底上的多个电介质层，所述多个介电层中的第一保护环和所述第一功能区周围，以及所述多个电介质层中的第二保护环和所述第二功能区周围。 第二保护环与第一保护环分离，第三功能区没有保护环。 IC器件还包括多个电介质层中的密封环。 密封圈环绕第一和第二保护环，并且与第一和第二保护环分离。

公开(公告)号：US20150380351A1

公开(公告)日：2015-12-31

申请号：US14851828

申请日：2015-09-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hao-Yi Tsai ,  Hsien-Wei Chen ,  Hung-Yi Kuo ,  Tung-Liang Shao ,  Ying-Ju Chen ,  Tsung-Yuan Yu ,  Jie Chen

IPC分类号： H01L23/522 ,  H01L23/31 ,  H01L49/02 ,  H01L23/00 ,  H01L23/532

CPC分类号： H01L23/5223 ,  H01L21/76838 ,  H01L22/14 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/48 ,  H01L23/50 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/525 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L28/60 ,  H01L29/00 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/03622 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/13026 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2924/1205 ,  H01L2924/00014 ,  H01L2924/014

摘要： A device includes a metal pad and a passivation layer having a portion overlapping the metal pad. A capacitor includes a bottom capacitor electrode underlying the passivation layer, wherein the bottom capacitor includes the metal pad. The capacitor further includes a top capacitor electrode over the portion of the passivation layer; and a capacitor insulator including the portion of the passivation layer.

摘要翻译： 一种器件包括金属焊盘和具有与金属焊盘重叠的部分的钝化层。 电容器包括位于钝化层下面的底部电容器电极，其中底部电容器包括金属焊盘。 电容器还包括位于钝化层部分上的顶部电容器电极; 以及包括钝化层的一部分的电容器绝缘体。

公开(公告)号：US20150255435A1

公开(公告)日：2015-09-10

申请号：US14721715

申请日：2015-05-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Hao-Yi Tsai ,  Hsien-Wei Chen ,  Hung-Yi Kuo

IPC分类号： H01L25/065 ,  H01L23/28

CPC分类号： H01L25/0657 ,  H01L21/4853 ,  H01L21/565 ,  H01L21/76829 ,  H01L23/28 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3192 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/02333 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05684 ,  H01L2224/1191 ,  H01L2224/13 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13184 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06558 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2924/00

摘要： Disclosed herein is a single mask package apparatus on a device comprising a first substrate having a land disposed on a first surface, a stud disposed on the land and a protective layer disposed over the first surface of the first substrate and around the stud. The protective layer may optionally have a thickness of at least 3 μm. A PPI may be disposed over the protective layer and in electrical contact with the stud, with a first portion of the PPI extending laterally from the stud. An interconnect may be disposed on and in electrical contact with the first portion of the PPI, and a second substrate mounted on the interconnect. A molding compound may be disposed over the PPI and around the interconnect. The stud may be a substantially solid material having a cylindrical cross section and may optionally be wirebonded to the land.

摘要翻译： 本文公开了一种在装置上的单个掩模封装装置，其包括具有设置在第一表面上的焊盘的第一基板和设置在焊盘上的螺柱以及设置在第一基板的第一表面上并围绕螺柱的保护层。 保护层可以任选地具有至少3μm的厚度。 PPI可以设置在保护层上并与螺柱电接触，PPI的第一部分从螺柱横向延伸。 互连可以设置在PPI的第一部分上并与其接触，以及安装在互连上的第二基板。 模制化合物可以设置在PPI上方和互连周围。 螺柱可以是具有圆柱形横截面的基本上固体的材料，并且可以任选地引线接合到焊盘。