公开(公告)号：US10580872B2

公开(公告)日：2020-03-03

申请号：US15596505

申请日：2017-05-16

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Hyungwoo Lee

IPC: H01L29/24 ,  H01L29/778 ,  H01L29/66

Abstract: Oxide heterostructures that form spatially separated electron-hole bilayers are provided. Also provided are electronic devices that incorporate the oxide heterostructures. The oxide heterostructure includes a base layer of SrTiO3, a polar layer of LaAlO2, and a non-polar layer of SrTiO3. Within the oxide heterostructures, a two-dimensional hole gas (2DHG) is formed at the interface between the non-polar layer and the polar layer and a two-dimensional electron gas (2DEG) is formed at the interface between the polar layer and the base layer.

公开(公告)号：US10216013B2

公开(公告)日：2019-02-26

申请号：US15451745

申请日：2017-03-07

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Chang-Beom Eom ,  Jaeseong Lee ,  Daesu Lee ,  Sang June Cho ,  Dong Liu

IPC: G02F1/01 ,  G02F1/00 ,  G02F1/313 ,  H01P3/00

Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.

公开(公告)号：US09972687B1

公开(公告)日：2018-05-15

申请号：US15464536

申请日：2017-03-21

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Daesu Lee

IPC: H01L29/24 ,  H01L21/36 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H03K17/51 ,  H01L45/00 ,  H01L21/02 ,  H03K17/687

CPC classification number: H01L29/24 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7869 ,  H01L45/065 ,  H01L45/1206 ,  H01L45/146 ,  H03K17/04 ,  H03K17/51 ,  H03K17/687

Abstract: Layers of high quality VO2 and methods of fabricating the layers of VO2 are provided. The layers are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and the same epitaxial orientation.

公开(公告)号：US20230175169A1

公开(公告)日：2023-06-08

申请号：US17544298

申请日：2021-12-07

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Rui Liu ,  Paul Gregory Evans ,  Donald E. Savage

IPC: C30B29/20 ,  C30B1/02 ,  C23C16/40

CPC classification number: C30B29/20 ,  C30B1/023 ,  C23C16/403

Abstract: Aluminum oxide (Al2O3) thin films having a high γ-phase purity and low defect density and methods for making the aluminum oxide thin films are provided. Also provided are epitaxial heterostructures that incorporate the aluminum oxide thin films as growth substrates and methods of forming the heterostructures. The Al2O3 films are pure, or nearly pure, γ-Al2O3. As such, the films contain no, or only a very low concentration of, other Al2O3 polymorph phases. In particular, the Al2O3 films contain no, or only a very low concentration of, the θ-Al2O3 polymorph phase.

公开(公告)号：US20200335690A1

公开(公告)日：2020-10-22

申请号：US16387898

申请日：2019-04-18

Applicant: WISCONSIN ALUMNI RESEARCH FOUNDATION

Inventor： Chang-Beom Eom ,  Mark Steven Rzchowski ,  Julian James Irwin ,  Shane Martin Lindeman

IPC: H01L41/20 ,  H01L27/22 ,  H01L27/20 ,  H01L43/02 ,  H01L43/12 ,  H01L41/18 ,  H01L41/12 ,  H01L41/37

Abstract: Magnetoelectric devices based on piezoelectric/magnetostrictive bilayers are provided. Also provided are methods of using the devices to modulate or to sense the magnetization of the magnetostrictive material. The devices include an island of magnetostrictive material that is strain-coupled to a thin layer of a piezoelectric material at an interface. A bottom electrode is placed in electrical communication with one surface of the piezoelectric film, and an unpaired top electrode is placed in electrical communication with a second, opposing surface of the piezoelectric film.

公开(公告)号：US20200234953A1

公开(公告)日：2020-07-23

申请号：US16252783

申请日：2019-01-21

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Jungwoo Lee

IPC: H01L21/02 ,  H01L29/24 ,  C23C14/08 ,  C23C14/28

Abstract: Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

公开(公告)号：US20190006581A1

公开(公告)日：2019-01-03

申请号：US16019831

申请日：2018-06-27

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Tianxiang Nan ,  Trevor Jeffrey Anderson

IPC: H01L43/04 ,  H01L43/10 ,  H01L43/14 ,  G11C11/16 ,  G11C11/18

CPC classification number: H01L43/04 ,  G11C11/161 ,  G11C11/165 ,  G11C11/18 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

Abstract: Magnetic switching devices, including magnetic memory devices, are provided. The devices use high-quality crystalline films of 4d or 5d transition metal perovskite having a strong spin-orbit coupling (SOC) to produce spin-orbit torque in adjacent ferromagnetic materials via a strong spin-Hall effect.

公开(公告)号：US20180331188A1

公开(公告)日：2018-11-15

申请号：US15591454

申请日：2017-05-10

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Daesu Lee

IPC: H01L29/24 ,  H01L29/45 ,  H01L29/94 ,  H01L29/861 ,  H01L29/786 ,  H03K17/687

CPC classification number: H01L29/24 ,  H01L29/45 ,  H01L29/7869 ,  H01L29/8611 ,  H01L29/94 ,  H03K17/687

Abstract: Heterostructures that include a bilayer composed of epitaxial layers of vanadium dioxide having different rutile-to-monoclinic phase transition temperatures are provided. Also provided are electrical switches that incorporate the heterostructures. The bilayers are characterized in that they undergo a single-step, collective, metal-insulator transition at an electronic transition temperature. At temperatures below the electronic transition temperature, the layer of vanadium dioxide having the higher rutile-to-monoclinic phase transition temperature has an insulating monoclinic crystalline phase, which is converted to a metallic monoclinic crystalline phase at temperatures above the electronic transition temperature.

公开(公告)号：US20180259796A1

公开(公告)日：2018-09-13

申请号：US15451745

申请日：2017-03-07

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Chang-Beom Eom ,  Jaeseong Lee ,  Daesu Lee ,  Sang June Cho ,  Dong Liu

IPC: G02F1/00 ,  H01P3/00 ,  G02F1/01 ,  G02F1/313

CPC classification number: G02F1/0054 ,  G02F1/0147 ,  G02F1/313 ,  G02F2202/105 ,  H01P3/003

Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.

公开(公告)号：US20170167012A1

公开(公告)日：2017-06-15

申请号：US14963636

申请日：2015-12-09

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Jacob P. Podkaminer ,  Jacob J. Patzner

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/34 ,  C23C14/54

CPC classification number: H01J37/3452 ,  C23C14/088 ,  C23C14/225 ,  C23C14/352 ,  C23C14/545 ,  H01J37/32935 ,  H01J37/3405 ,  H01J37/3473

Abstract: Thin film deposition systems with in situ, real-time RHEED monitoring of films deposited via off-axis magnetron sputtering are provided. Also provided are methods of using the systems to grow the films and methods to monitor their growth in real-time. Using the deposition systems, thin films of a sputtered material are grown and monitored in a single vacuum sputtering chamber that houses components of both the magnetron sputtering system and the RHEED system arranged about the substrate onto which the film is grown.