公开(公告)号：US08232176B2

公开(公告)日：2012-07-31

申请号：US11765944

申请日：2007-06-20

申请人： Dmitry Lubomirsky ,  Srinivas D. Nemani ,  Ellie Yieh

发明人： Dmitry Lubomirsky ,  Srinivas D. Nemani ,  Ellie Yieh

IPC分类号： H01L21/762

CPC分类号： H01L21/76229

摘要： Methods to reduce film cracking in a dielectric layer are described. The methods may include the steps of depositing a first dielectric film on a substrate and removing a top portion of the first dielectric film by performing an etch on the film. The methods may also include depositing a second dielectric film over the etched first film, and removing a top portion of the second dielectric film. In addition, the methods may include annealing the first and second dielectric films to form the dielectric layer, where the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer.

摘要翻译： 描述了减少电介质层中的膜破裂的方法。 所述方法可以包括以下步骤：在衬底上沉积第一电介质膜并通过对膜进行蚀刻来去除第一电介质膜的顶部。 所述方法还可以包括在蚀刻的第一膜上沉积第二电介质膜，以及去除第二电介质膜的顶部。 此外，所述方法可以包括退火第一和第二介电膜以形成电介质层，其中从第一和第二电介质膜去除顶部部分降低了介电层中的应力水平。

公开(公告)号：US20120180954A1

公开(公告)日：2012-07-19

申请号：US13251663

申请日：2011-10-03

申请人： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

发明人： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

IPC分类号： C23F1/02 ,  C23C16/458 ,  C23C16/455 ,  C23C16/50

CPC分类号： H05H1/24 ,  C23C16/45565 ,  C23C16/45585 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32724 ,  H01L21/02274

摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

摘要翻译： 描述了具有位于处理室内的电容耦合等离子体（CCP）单元的衬底处理系统。 CCP单元可以包括形成在第一电极和第二电极之间的等离子体激发区域。 第一电极可以包括允许第一气体进入等离子体激发区域的第一多个开口，并且第二电极可以包括允许活化气体离开等离子体激发区域的第二多个开口。 该系统还可以包括用于将第一气体供应到CCP单元的第一电极的气体入口和可操作以支撑衬底的基座。 基座位于气体反应区域的下方，活性气体从CCP单元行进。

公开(公告)号：US08108981B2

公开(公告)日：2012-02-07

申请号：US11888327

申请日：2007-07-31

申请人： Dmitry Lubomirsky ,  Kadthala Ramaya Narendranath ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Muhammad Rasheed ,  Tony Kaushal

发明人： Dmitry Lubomirsky ,  Kadthala Ramaya Narendranath ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Muhammad Rasheed ,  Tony Kaushal

IPC分类号： B23P17/00

CPC分类号： H02N13/00 ,  H01L21/6833 ,  Y10T29/49117 ,  Y10T29/49885

摘要： A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum.

摘要翻译： 一种制造静电卡盘的方法，包括将板定位在主体中的通道中以形成气室，并将电介质部件插入板中的开口中，其中介电部件限定了来自气室的通道的一部分。 此后，沉积覆盖主体的至少一部分和板的至少一部分以形成支撑表面的电介质层。 将电介质层抛光至规定的厚度。 在一个实施例中，抛光工艺形成通过介电层的开口，以使得介质部件能够在支撑表面和集气室之间限定通道。 在另一个实施例中，电介质层的至少一部分在绝缘元件附近是多孔的，使得多孔介电层和电介质元件在支撑表面和增压室之间形成通道。 在另一实施例中，穿过电介质层形成孔，并且电介质层中的孔和电介质元件在支撑表面和气室之间形成通道。

公开(公告)号：US20110115378A1

公开(公告)日：2011-05-19

申请号：US12905940

申请日：2010-10-15

申请人： Dmitry Lubomirsky ,  Jang-Gyoo Yang ,  Matthew Miller ,  Jay Pinson ,  Kien Chuc

发明人： Dmitry Lubomirsky ,  Jang-Gyoo Yang ,  Matthew Miller ,  Jay Pinson ,  Kien Chuc

IPC分类号： H05B31/26

CPC分类号： H01J37/3211 ,  H01J37/32357

摘要： Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.

摘要翻译： 本发明的实施例通常提供一种等离子体源装置及其使用方法，其能够通过使用电磁能量在等离子体产生区域内产生自由基和/或气体离子，所述等离子体产生区域围绕磁芯元件对称地定位 资源。 通常，等离子体产生区域和磁芯的取向和形状允许将输送的电磁能量有效均匀地耦合到设置在等离子体产生区域中的气体。 通常，等离子体产生区域中形成的等离子体的改进的特性能够改善在设置在等离子体产生区域下游的衬底或处理室的一部分上进行的沉积，蚀刻和/或清洁过程。

公开(公告)号：US20100098882A1

公开(公告)日：2010-04-22

申请号：US12581600

申请日：2009-10-19

申请人： Dmitry Lubomirsky ,  Jang Gyoo Yang ,  Qiwei Liang ,  Matthew L. Miller ,  James Santosa ,  Xinglong Chen ,  Paul F. Smith

发明人： Dmitry Lubomirsky ,  Jang Gyoo Yang ,  Qiwei Liang ,  Matthew L. Miller ,  James Santosa ,  Xinglong Chen ,  Paul F. Smith

IPC分类号： C23C16/50 ,  C23C16/00

CPC分类号： C23C16/4405 ,  H01J37/32036 ,  H01J37/32045 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32357

摘要： Apparatus and methods for processing a substrate and processing a process chamber are provided. In one embodiment, an apparatus is provided for processing a substrate including a power source, a switch box coupled to the power source and the switch box having a switch interchangeable between a first position and a second position, a first match box coupled to the switch box, a plasma generator coupled to the first match box, a second match box coupled to the switch box, and a remote plasma source coupled to the second match box.

摘要翻译： 提供了用于处理基板和处理处理室的装置和方法。 在一个实施例中，提供一种用于处理包括电源，耦合到电源的开关盒和具有可在第一位置和第二位置之间互换的开关的开关盒的基板的设备，耦合到开关的第一匹配盒 耦合到第一匹配盒的等离子体发生器，耦合到开关盒的第二匹配盒以及耦合到第二匹配盒的远程等离子体源。

公开(公告)号：US20090120584A1

公开(公告)日：2009-05-14

申请号：US12059820

申请日：2008-03-31

申请人： Dmitry Lubomirsky ,  Toan Q. Tran ,  Lun Tsuei ,  Manuel A. Hernandez ,  Kirby H. Floyd ,  Ellie Y. Yieh

发明人： Dmitry Lubomirsky ,  Toan Q. Tran ,  Lun Tsuei ,  Manuel A. Hernandez ,  Kirby H. Floyd ,  Ellie Y. Yieh

IPC分类号： C23F1/08 ,  B05C13/00 ,  B05C15/00 ,  H01L21/677 ,  B05C21/00

CPC分类号： H01L21/6719 ,  H01L21/67017 ,  H01L21/68742 ,  H01L21/68792

摘要： A semiconductor processing system is described. The system includes a processing chamber having an interior capable of holding an internal chamber pressure below ambient atmospheric pressure. The system also includes a pumping system coupled to the chamber and adapted to remove material from the processing chamber. The system further includes a substrate support pedestal, where the substrate support pedestal is rigidly coupled to a substrate support shaft extending through a wall of the processing chamber. A bracket located outside the processing chamber is provided which is rigidly and sometimes rotatably coupled to the substrate support shaft. A motor coupled to the bracket can be actuated to vertically translate the substrate support pedestal, shaft and bracket from a first position to a second position closer to a processing plate. A piston mounted on an end of the bracket provides a counter-balancing force to a tilting force, where the tilting force is generated by a change in the internal chamber pressure and causes a deflection in the position of the bracket and the substrate support. The counter-balancing force reduces the deflection of the bracket and the substrate support.

摘要翻译： 描述半导体处理系统。 该系统包括具有能够将内部室压力保持在环境大气压力以下的内部的处理室。 该系统还包括耦合到腔室并适于从处理室移除材料的泵送系统。 该系统还包括基板支撑基座，其中基板支撑基座刚性地联接到延伸穿过处理室的壁的基板支撑轴。 提供位于处理室外部的支架，其刚性且有时可旋转地联接到基板支撑轴。 耦合到支架的马达可以被致动以将基板支撑基座，轴和托架从第一位置垂直平移到靠近处理板的第二位置。 安装在支架的端部上的活塞提供与倾斜力的反平衡力，其中倾斜力由内部室压力的变化产生，并且引起支架和基板支撑件的位置的偏转。 反平衡力减小了支架和基板支架的挠曲。

公开(公告)号：US20070289534A1

公开(公告)日：2007-12-20

申请号：US11754858

申请日：2007-05-29

申请人： Dmitry Lubomirsky ,  Qiwei Liang ,  Soonam Park ,  Kien Chuc ,  Ellie Yieh

发明人： Dmitry Lubomirsky ,  Qiwei Liang ,  Soonam Park ,  Kien Chuc ,  Ellie Yieh

IPC分类号： C23C16/452

CPC分类号： C23C16/46 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/67115

摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a radiative heating system to heat the substrate that includes at least one light source, where at least some of the light emitted from the light source travels through the top side of the deposition chamber before reaching the substrate. The system may also include a precursor distribution system to introduce the reactive radical precursor and additional dielectric precursors to the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

摘要翻译： 描述了从电介质前体的等离子体在衬底上形成电介质层的系统。 该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体 。 该系统还可以包括辐射加热系统以加热包括至少一个光源的基板，其中从光源发射的至少一些光在到达基板之前穿过沉积室的顶侧。 该系统还可以包括将反应性基团前体和另外的电介质前体引入沉积室的前体分配系统。 还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

公开(公告)号：US20070277734A1

公开(公告)日：2007-12-06

申请号：US11754916

申请日：2007-05-29

申请人： Dmitry Lubomirsky ,  Qiwei Liang ,  Soonam Park ,  Kien Chuc ,  Ellie Yieh

发明人： Dmitry Lubomirsky ,  Qiwei Liang ,  Soonam Park ,  Kien Chuc ,  Ellie Yieh

IPC分类号： C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/402 ,  C23C16/45574 ,  C23C16/505

摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system comprising a dual-channel showerhead positioned above the substrate stage. The showerhead may have a faceplate with a first set of openings through which the reactive radical precursor enters the deposition chamber, and a second set of openings through which a second dielectric precursor enters the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

摘要翻译： 描述了从电介质前体的等离子体在衬底上形成电介质层的系统。 该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体 。 该系统还可以包括前体分配系统，其包括位于衬底台上方的双通道喷头。 喷头可以具有面板，其具有第一组开口，反应性自由基前体通过该开口进入沉积室，以及第二组开口，第二介电体前体通过该开口进入沉积室。 还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

公开(公告)号：US07247222B2

公开(公告)日：2007-07-24

申请号：US10268284

申请日：2002-10-09

申请人： Michael X. Yang ,  Dmitry Lubomirsky ,  Yezdi Dordi ,  Saravjeet Singh ,  Sheshraj Tulshibagwale ,  Nicolay Kovarsky

发明人： Michael X. Yang ,  Dmitry Lubomirsky ,  Yezdi Dordi ,  Saravjeet Singh ,  Sheshraj Tulshibagwale ,  Nicolay Kovarsky

IPC分类号： C25B9/00 ,  C25C7/04 ,  C25B9/08

CPC分类号： H01L21/2885 ,  A23D7/00 ,  A23D7/005 ,  A23D7/01 ,  A23J7/00 ,  C07F9/103 ,  C25D7/123 ,  C25D17/001

摘要： Embodiments of the invention may generally provide a small volume electrochemical plating cell. The plating cell generally includes a fluid basin configured to contain a plating solution therein, the fluid basin having a substantially horizontal weir. The cell further includes an anode positioned in a lower portion of the fluid basin, the anode having a plurality of parallel channels formed therethrough, and a base member configured to receive the anode, the base member having a plurality of groves formed into an anode receiving surface, each of the plurality of grooves terminating into an annular drain channel. A membrane support assembly configured to position a membrane immediately above the anode in a substantially planar orientation with respect to the anode surface is provided, the membrane support assembly having a plurality of channels and bores formed therein.

摘要翻译： 本发明的实施方案通常可以提供小体积的电化学电镀单元。 电镀槽通常包括配置成在其中容纳电镀液的流体池，流体池具有基本上水平的堰。 电池还包括位于流体槽的下部的阳极，阳极具有穿过其形成的多个平行通道，以及构造成容纳阳极的基座构件，底座构件具有形成为阳极接收的多个槽 多个槽中的每一个终止于环形排水通道。 提供了一种膜支撑组件，其被配置为将膜垂直于阳极定位在相对于阳极表面的基本上平面的方向上，所述膜支撑组件具有形成在其中的多个通道和孔。

公开(公告)号：US20050260345A1

公开(公告)日：2005-11-24

申请号：US11175251

申请日：2005-07-06

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian Pancham

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian Pancham

IPC分类号： B05C11/02 ,  B05C13/00 ,  B05D3/12 ,  C23C18/16 ,  C23C26/00 ,  C23C26/02 ,  H01L21/00 ,  H01L21/687

CPC分类号： H01L21/68728 ,  C23C18/1619 ,  C23C18/1632 ,  C23C26/00 ,  C23C26/02 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/68735 ,  H01L21/68792

摘要： An electroless deposition system and electroless deposition stations are provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate shuttle positioned to transfer substrates between the first and second processing stations. The electroless deposition station also includes various fluid delivery and substrate temperature controlling devices to perform a contamination free and uniform electroless deposition process.

摘要翻译： 提供无电沉积系统和无电沉积站。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境控制的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站和定位成转移的基板梭 第一和第二处理站之间的基板。 无电沉积站还包括各种流体输送和基板温度控制装置，以执行无污染和均匀的无电沉积工艺。