-
公开(公告)号：US09246053B2
公开(公告)日：2016-01-26
申请号：US14748516
申请日：2015-06-24
Inventor： Xinghua Liang , Te-Ling Hsia , Chenke Hsu , Chih-Wei Chao , Shuiqing Li
CPC classification number: H01L33/145 , H01L33/0079 , H01L33/0095 , H01L33/025 , H01L33/10
Abstract: A light-emitting device of little aging electric leakage and high luminous efficiency and fabrication thereof, in which, the light-emitting device includes: a semiconductor epitaxial laminated layer that comprises an N-type semiconductor layer, a P-type semiconductor layer and a light-emitting layer between the N-type semiconductor layer and the P-type semiconductor layer, the surface of which has deflected dislocation; electromigration resistant metal that fills into the deflected dislocation over the N-type or/and P-type semiconductor layer surface through pretreatment to block the electromigration channel formed over the semiconductor epitaxial laminated layer due to deflected dislocation to eliminate electric leakage.
Abstract translation: 一种发光装置，具有小的老化漏电和高发光效率及其制造，其中，发光装置包括：半导体外延层叠层，其包括N型半导体层，P型半导体层和 N型半导体层和P型半导体层之间的发光层，其表面具有偏转位错; 通过预处理填充在N型或/或P型半导体层表面上的偏转位错的电迁移金属，以阻挡由于偏转位错而形成在半导体外延层叠层上的电迁移通道，以消除漏电。
-
公开(公告)号：US10559732B2
公开(公告)日：2020-02-11
申请号：US15368599
申请日：2016-12-03
Inventor： Shaohua Huang , Xiaoqiang Zeng , Chih-Wei Chao
Abstract: A surface-mounted light-emitting device is fabricated by epitaxial growth: forming the LED epitaxial structure over a growth substrate through epitaxial growth; chip fabrication: determining P and N electrode regions and an isolating region over the LED epitaxial structure surface and fabricating the P and N electrode pads and the insulator over the P and N electrode regions and the isolating region, wherein the P and N electrode pads have sufficient thicknesses to support the LED epitaxial structure, and the insulator is formed between the P and N electrode pads to prevent the P and N electrode pads from a short circuit; removing the growth substrate and unitizing the LED epitaxial structure to form the chip; and SMT packaging: providing the supporting substrate and directly mounting the P and N electrode pads of the chip over the supporting substrate through SMT packaging to thereby form the surface-mounted LED light-emitting device.
-
公开(公告)号：US10367126B2
公开(公告)日：2019-07-30
申请号：US14725822
申请日：2015-05-29
Inventor： Junpeng Shi , Pei-Song Cai , Hao Huang , Zhenduan Lin , Chih-Wei Chao , Chen-Ke Hsu
IPC: H01L33/00 , H01L33/62 , H01L33/60 , H01L33/64 , H01L25/075
Abstract: A light-emitting device includes a base having an insulating part and a metal block; a light-emitting diode (LED) chip over the base; a water soluble paste between the LED chip and the base metal block for chip fixing and heat conduction; packaging glue covering the LED chip; and the LED chip bottom, water soluble paste and the base metal block form an all-metal thermal conducting path to achieve low a thermal resistance.
-
公开(公告)号：US09666757B2
公开(公告)日：2017-05-30
申请号：US14588001
申请日：2014-12-31
Inventor： Xiaoqiang Zeng , Chih-Wei Chao , Shunping Chen , Jianjian Yang , Daquan Lin
CPC classification number: H01L33/145 , H01L33/005 , H01L33/0079 , H01L33/20 , H01L33/36 , H01L33/38 , H01L2933/0016
Abstract: A vertical LED with current blocking structure and its associated fabrication method involve an anisotropic conductive material and a conductive substrate with concave-convex structure. The anisotropic conductive material forms a bonding layer with vertical conduction and horizontal insulation between the concave-convex substrate and the light-emitting epitaxial layer, thereby forming a vertical LED with current blocking function.
-
公开(公告)号：US09537057B2
公开(公告)日：2017-01-03
申请号：US14748701
申请日：2015-06-24
Inventor： Shaohua Huang , Xiaoqiang Zeng , Chih-Wei Chao
CPC classification number: H01L33/62 , H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/486 , H01L2224/73204 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066 , H01L2933/0091
Abstract: A surface-mounted light-emitting device includes: a LED epitaxial structure having two opposite surfaces, wherein the first surface is a light-emitting surface; P and N electrode pads over the second surface of the epitaxial structure, which have sufficient thickness to support the LED epitaxial structure, and the P and N electrode pads have two opposite surfaces respectively, in which, the first surface is approximate to the LED epitaxial structure; an insulator between the P and N pads to prevent the P and N electrode pads from short circuit; and the P and N electrode pads are directly applied in the SMT package. Some embodiments allow structural changes compared with conventional SMT package type by directly mounting the chip over the supporting substrate through an electrode pad. In addition, soldering is followed after the chip process without package step, which is mainly applicable to flip-chip LED device.
Abstract translation: 表面安装的发光装置包括：具有两个相对表面的LED外延结构，其中第一表面是发光表面; P和N电极焊盘在外延结构的第二表面上，其具有足够的厚度以支撑LED外延结构，并且P和N电极焊盘分别具有两个相对的表面，其中第一表面近似于LED外延 结构体; P和N焊盘之间的绝缘体，以防止P和N电极焊盘短路; 并且P和N电极焊盘直接应用于SMT封装中。 一些实施例通过将芯片直接安装在支撑衬底上通过电极焊盘而允许与常规SMT封装类型相比的结构变化。 另外，芯片处理后没有封装步骤焊接，主要适用于倒装芯片的LED器件。
-
Patent Agency Ranking
公开(公告)号：US12080989B2
公开(公告)日：2024-09-03
申请号：US18232919
申请日：2023-08-11
Inventor： Hui Chen , Junpeng Shi , Xinglong Li , Chi-Wei Liao , Weng-Tack Wong , Chih-Wei Chao , Chen-ke Hsu
IPC: H01S5/00 , H01S5/02255 , H01S5/024 , H01S5/06 , H01S5/40 , F21V7/00 , H01S5/02208
CPC classification number: H01S5/0087 , H01S5/02255 , H01S5/02461 , H01S5/0609 , H01S5/4012 , F21V7/0008 , H01S5/02208 , H01S5/02469 , H01S5/4056
Abstract: The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.
-
公开(公告)号：US11769985B2
公开(公告)日：2023-09-26
申请号：US17586305
申请日：2022-01-27
Inventor： Hui Chen , Junpeng Shi , Xinglong Li , Chi-Wei Liao , Weng-Tack Wong , Chih-Wei Chao , Chen-ke Hsu
IPC: H01S5/00 , H01S5/024 , H01S5/06 , H01S5/40 , H01S5/02255 , F21V7/00 , H01S5/02208
CPC classification number: H01S5/0087 , H01S5/02255 , H01S5/02461 , H01S5/0609 , H01S5/4012 , F21V7/0008 , H01S5/02208 , H01S5/02469 , H01S5/4056
Abstract: The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.
-
公开(公告)号：US11362074B2
公开(公告)日：2022-06-14
申请号：US16878290
申请日：2020-05-19
Inventor： Shunyi Chen , Junpeng Shi , Weng-Tack Wong , Chen-ke Hsu , Chih-Wei Chao
Abstract: A light-emitting diode (LED) device includes a substrate, an electrically conductive layer, a first LED chip, and an anti-electrostatic discharge element. The substrate has opposite upper and lower surfaces. The electrically conductive layer is formed on the upper surface of the substrate, and has first and second regions that are electrically separated from each other by a trench structure. The trench structure has a first segment and a second segment which connects and is not collinear with the first segment. The first LED chip is disposed across the first segment, and the anti-electrostatic discharge element is disposed across the second segment, both interconnecting the first and second regions.
-
公开(公告)号：US10510938B2
公开(公告)日：2019-12-17
申请号：US15621351
申请日：2017-06-13
Inventor： Jun-Peng Shi , Pei-Song Cai , Hao Huang , Xing-Hua Liang , Zhen-Duan Lin , Chih-Wei Chao , Chen-Ke Hsu
Abstract: A light-emitting diode (LED) package includes a substrate with upper and lower surfaces, including: a metal block; an electrically insulating region surrounding at least a portion of the metal block; an LED chip mounted on the substrate and in electrical communication with the metal block; and an encapsulant covering at least an upper surface of the LED chip. A light-emitting system includes a plurality of light-emitting diode (LED) chips; and a package support for the plurality of LED chips.
-
公开(公告)号：US09812613B2
公开(公告)日：2017-11-07
申请号：US15289145
申请日：2016-10-08
Inventor： Shaohua Huang , Xiaoqiang Zeng , Chih-Wei Chao
IPC: H01L29/205 , H01L33/00 , H01L33/38 , H01L33/48 , H01L27/15 , H01L33/44 , H01L21/78 , H01L25/075 , H01L33/62 , H01L23/00
CPC classification number: H01L33/385 , H01L21/78 , H01L24/14 , H01L25/0753 , H01L27/15 , H01L27/153 , H01L27/156 , H01L33/005 , H01L33/382 , H01L33/387 , H01L33/44 , H01L33/486 , H01L33/62 , H01L2224/16245 , H01L2924/01322 , H01L2924/12041 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
Abstract: A light-emitting diode (LED) includes: an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface; at least one insulating layer over the lower surface; and an electrode pad layer over the at least one insulating layer; wherein: the electrode pad layer comprises a P electrode region and an N electrode region; and the at least one insulating layer is configured to adjust a distribution of the P and N electrode regions over the electrode pad layer.
-
-
-
-
-
-
-
-
-
Search Results
22
records
(took 0.016 seconds)
