公开(公告)号：US08258055B2

公开(公告)日：2012-09-04

申请号：US12832168

申请日：2010-07-08

申请人： Chien Ling Hwang ,  Ying-Jui Huang ,  Zheng-Yi Lim ,  Yi-Yang Lei ,  Cheng-Chung Lin ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Ying-Jui Huang ,  Zheng-Yi Lim ,  Yi-Yang Lei ,  Cheng-Chung Lin ,  Chung-Shi Liu

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/03464 ,  H01L2224/0361 ,  H01L2224/03831 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11622 ,  H01L2224/11831 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13007 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/1146

摘要： An embodiment of the disclosure includes a conductive bump on a semiconductor die. A substrate is provided. A bond pad is over the substrate. An under bump metallurgy (UBM) layer is over the bond pad. A copper pillar is over the UBM layer. The copper pillar has a top surface with a first width and sidewalls with a concave shape. A nickel layer having a top surface and a bottom surface is over the top surface of the copper pillar. The bottom surface of the nickel layer has a second width. A ratio of the second width to the first width is between about 0.93 to about 1.07. A solder material is over the top surface of the cap layer.

摘要翻译： 本公开的实施例包括半导体管芯上的导电凸块。 提供基板。 焊盘在衬底上。 凸块下金属（UBM）层位于焊盘上方。 铜柱在UBM层之上。 铜柱具有第一宽度的顶表面和具有凹形的侧壁。 具有顶表面和底表面的镍层在铜柱的顶表面之上。 镍层的底面具有第二宽度。 第二宽度与第一宽度的比率在约0.93至约1.07之间。 焊料材料在盖层的顶表面之上。

公开(公告)号：US08823166B2

公开(公告)日：2014-09-02

申请号：US12871565

申请日：2010-08-30

申请人： Cheng-Chung Lin ,  Chung-Shi Liu ,  Meng-Wei Chou ,  Kuo Cheng Lin ,  Wen-Hsiung Lu ,  Chien Ling Hwang ,  Ying-Jui Huang ,  De-Yuan Lu

发明人： Cheng-Chung Lin ,  Chung-Shi Liu ,  Meng-Wei Chou ,  Kuo Cheng Lin ,  Wen-Hsiung Lu ,  Chien Ling Hwang ,  Ying-Jui Huang ,  De-Yuan Lu

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/11 ,  H01L21/02052 ,  H01L21/32125 ,  H01L21/76873 ,  H01L21/76885 ,  H01L23/488 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2221/1084 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05541 ,  H01L2224/05573 ,  H01L2224/1111 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11472 ,  H01L2224/11474 ,  H01L2224/11614 ,  H01L2224/1181 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/1191 ,  H01L2224/11912 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/81191 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0541 ,  H01L2924/07025 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/20102 ,  H01L2924/3512 ,  H01L2924/381 ,  H01L2924/3841 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/207

摘要： Apparatus and methods for providing solder pillar bumps. Pillar bump connections are formed on input/output terminals for integrated circuits by forming a pillar of conductive material using plating of a conductive material over terminals of an integrated circuit. A base portion of the pillar bump has a greater width than an upper portion. A cross-section of the base portion of the pillar bump may make a trapezoidal, rectangular or sloping shape. Solder material may be formed on the top surface of the pillar. The resulting solder pillar bumps form fine pitch package solder connections that are more reliable than those of the prior art.

摘要翻译： 用于提供焊料柱凸块的装置和方法。 通过在集成电路的端子上通过导电材料的电镀形成导电材料的支柱，在集成电路的输入/输出端子上形成支柱凸点连接。 柱状凸块的基部具有比上部更大的宽度。 柱形凸起的基部的横截面可以形成梯形，矩形或倾斜的形状。 焊料可以形成在柱的顶表面上。 所得到的焊料柱凸起形成比现有技术更可靠的细间距封装焊接连接。

公开(公告)号：US08317077B2

公开(公告)日：2012-11-27

申请号：US13351099

申请日：2012-01-16

申请人： Chien Ling Hwang ,  Ying-Jui Huang ,  Cheng-Chung Lin ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Ying-Jui Huang ,  Cheng-Chung Lin ,  Chung-Shi Liu

IPC分类号： B23K37/04

CPC分类号： H01L24/81 ,  B23K1/0012 ,  B23K1/203 ,  B23K3/087 ,  B23K2101/42 ,  H01L24/95 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/7565 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/75755 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81204 ,  H01L2224/814 ,  H01L2224/81907 ,  H01L2224/81986 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/00

摘要： A method of bonding includes providing a first work piece, and attaching a second work piece on the first work piece, with a solder bump disposed between the first and the second work pieces. The second work piece is heated using a heating head of a heating tool to melt the solder bump. After the step of heating the second work piece, one of the first and the second work pieces is allowed to move freely in a horizontal direction to self-align the first and the second work pieces. After the step of allowing one of the first and the second work pieces to move, a temperature of the heating head is lowed until the first solder bump solidifies to form a second solder bump.

公开(公告)号：US08177862B2

公开(公告)日：2012-05-15

申请号：US12901273

申请日：2010-10-08

申请人： Chien Ling Hwang ,  Cheng-Chung Lin ,  Ying-Jui Huang ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Cheng-Chung Lin ,  Ying-Jui Huang ,  Chung-Shi Liu

IPC分类号： H01L21/58

CPC分类号： H01L24/75 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/1605 ,  H01L2224/75302 ,  H01L2224/7531 ,  H01L2224/75312 ,  H01L2224/755 ,  H01L2224/75502 ,  H01L2224/7565 ,  H01L2224/75745 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/14 ,  Y10T29/41 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method includes allowing a work piece having a solder bump to contact a bond head; heating the bond head until the solder bump is melted; and conducting a cooling media into the bond head to cool the solder bump and to solidify the solder bump.

摘要翻译： 一种方法包括允许具有焊料凸点的工件接触焊接头; 加热粘结头，直到焊料凸起熔化; 并将冷却介质导入接合头以冷却焊料凸点并固化焊料凸块。

公开(公告)号：US20120111922A1

公开(公告)日：2012-05-10

申请号：US13351099

申请日：2012-01-16

申请人： Chien Ling Hwang ,  Ying-Jui Huang ,  Cheng-Chung Lin ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Ying-Jui Huang ,  Cheng-Chung Lin ,  Chung-Shi Liu

IPC分类号： B23K3/04 ,  B23K3/08

CPC分类号： H01L24/81 ,  B23K1/0012 ,  B23K1/203 ,  B23K3/087 ,  B23K2101/42 ,  H01L24/95 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/7565 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/75755 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81204 ,  H01L2224/814 ,  H01L2224/81907 ,  H01L2224/81986 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/00

摘要： A method of bonding includes providing a first work piece, and attaching a second work piece on the first work piece, with a solder bump disposed between the first and the second work pieces. The second work piece is heated using a heating head of a heating tool to melt the solder bump. After the step of heating the second work piece, one of the first and the second work pieces is allowed to move freely in a horizontal direction to self-align the first and the second work pieces. After the step of allowing one of the first and the second work pieces to move, a temperature of the heating head is lowed until the first solder bump solidifies to form a second solder bump.

摘要翻译： 一种接合方法包括提供第一工件，并且将第二工件附接在第一工件上，其中焊料凸块设置在第一和第二工件之间。 使用加热工具的加热头加热第二工件以熔化焊料凸块。 在加热第二工件的步骤之后，允许第一工件和第二工件中的一个在水平方向上自由移动以使第一工件和第二工件自对准。 在允许第一和第二工件中的一个移动的步骤之后，加热头的温度降低直到第一焊料凸点固化以形成第二焊料凸块。

公开(公告)号：US08088692B2

公开(公告)日：2012-01-03

申请号：US12575754

申请日：2009-10-08

申请人： Ying-Jui Huang ,  Hwai-Pwu Chou

发明人： Ying-Jui Huang ,  Hwai-Pwu Chou

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31116 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01L27/0617

摘要： A method for fabricating a multilayer microstructure with balancing residual stress capability includes forming a multilayer microstructure on a silicon substrate and conducting a step of isotropic plasma etching. The multilayer microstructure includes a first metal layer and a second metal layer patterned and aligned symmetrically to form etching through holes; a metal via layer surrounding each etching through hole; and an insulating layer filling each etching through hole and disposed between the substrate and the first metal layer. The step of isotropic chemical plasma etching removes the insulating layer in each etching through hole, the insulating layer between the substrate and the metal layer and a portion of the substrate to form a suspended multilayer microstructure on the substrate, during which a chamber pressure larger than vacuum and maintains a ratio between a lateral etching rate and a vertical etching rate between 0.5 to 1 is used; and the reaction gases comprise a gaseous fluoride and oxygen.

摘要翻译： 用于制造具有平衡残余应力能力的多层微结构的方法包括在硅衬底上形成多层微结构并进行各向同性等离子体蚀刻步骤。 多层微结构包括对称地图案化和对准的第一金属层和第二金属层，以形成蚀刻通孔; 围绕每个蚀刻通孔的金属通孔层; 以及绝缘层，其填充每个蚀刻通孔并且设置在所述基板和所述第一金属层之间。 各向同性化学等离子体蚀刻的步骤去除了每个蚀刻通孔中的绝缘层，衬底和金属层之间的绝缘层以及衬底的一部分，以在衬底上形成悬浮的多层微结构，在此期间室压力大于 使用真空度并保持横向蚀刻速率和0.5至1之间的垂直蚀刻速率之间的比率; 并且反应气体包含氟化物和氧气。