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公开(公告)号:US20230227318A1
公开(公告)日:2023-07-20
申请号:US18186328
申请日:2023-03-20
Applicant: KILT, LLC
Inventor: Flavio Ernesto Ribeiro , Larry W. Shipley , Leo Gingras
IPC: C01B33/12
CPC classification number: C01B33/124 , C01P2002/02 , C01P2006/12 , C01P2006/14 , C01P2006/16
Abstract: Porous amorphous silica can be obtained from siliceous plant matter containing non-siliceous inorganic substances. The siliceous plant matter is soaked in an aqueous solution which includes a chelating agent. The chelating agent is present in an amount which helps to extract at least some of the non-siliceous inorganic matter. The aqueous solution is then separated from the siliceous plant matter. Beneficial properties are imparted to the siliceous plant matter by controlling the amount of at least one preselected non-siliceous inorganic substance in the siliceous plant matter. At the end of the process, the siliceous plant matter is heat treated in the presence of oxygen at a temperature to produce the resulting amorphous silica having the beneficial properties.
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公开(公告)号:US20230202908A1
公开(公告)日:2023-06-29
申请号:US18173173
申请日:2023-02-23
Applicant: AGC Inc.
Inventor: Naoya WADA , Satoru TOMENO , Misa INAMOTO
IPC: C03C3/247 , C01B25/455 , C08K3/40 , B32B17/10 , B32B27/36
CPC classification number: C03C3/247 , C01B25/455 , C08K3/40 , B32B17/10 , B32B27/36 , C01P2002/02 , B32B2250/40 , B32B2315/08 , B32B2367/00
Abstract: The invention relates to a glass including, as represented by mol % based on elements: 8-25% of P; 8-40% of Sn; 20-80% of O; and 1-50% of F, in which the glass has a glass transition temperature Tg of 300° C. or lower, and the glass gives an infrared absorption spectrum satisfying A3240/A3100 of 0.6-1.2, where the A3100 is an absorbance per 1-mm thickness at a wavenumber of 3,100 cm−1 and the A3240 is an absorbance per 1-mm thickness at a wavenumber of 3,240 cm−1.
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公开(公告)号:US20230181627A1
公开(公告)日:2023-06-15
申请号:US18106735
申请日:2023-02-07
Applicant: AMORPHICAL LTD.
Inventor: Yigal Blum , Yosef Ben , Sharon Hershkovitz
IPC: A61K33/10 , C01F11/18 , A23L33/16 , A23C9/152 , A23C19/09 , A23C9/13 , A61K9/00 , A61K9/10 , A61K47/10 , A61K47/14 , A61K47/26 , A61K47/34 , A61K47/40
CPC classification number: A61K33/10 , C01F11/185 , A23L33/16 , C01F11/18 , A23C9/1522 , A23C19/0921 , A23C9/1322 , A61K9/0014 , A61K9/10 , A61K47/10 , A61K47/14 , A61K47/26 , A61K47/34 , A61K47/40 , C01P2002/02 , A23V2002/00 , A23C13/12
Abstract: The present invention provides stabilized amorphous calcium carbonate (ACC) formulations, comprising ACC and a non-aqueous liquid carrier in which the ACC is dispersed. The present invention further provides cosmetic and pharmaceutical compositions comprising ACC.
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14.
公开(公告)号:US11643753B2
公开(公告)日:2023-05-09
申请号:US17111190
申请日:2020-12-03
Inventor: Woo-young Shim , Ji-hong Bae
CPC classification number: C30B29/40 , C01G30/002 , C30B29/68 , B82Y30/00 , B82Y40/00 , C01P2002/02 , C01P2002/20 , C01P2002/90 , C01P2006/40
Abstract: Proposed are a layered Group III-V antimony compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] Mx−mAySbz (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0
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公开(公告)号:US20180294152A1
公开(公告)日:2018-10-11
申请号:US15976028
申请日:2018-05-10
Applicant: VERSUM MATERIALS US, LLC
Inventor: Manchao Xiao , Xinjian Lei , Daniel P. Spence , Haripin Chandra , Bing Han , Mark Leonard O'Neill , Steven Gerard Mayorga , Anupama Mallikarjunan
IPC: H01L21/02 , C23C16/455 , C23C16/34 , C09D7/20 , C07F7/10 , C01B33/12 , C01B33/021 , C09D1/00
CPC classification number: H01L21/02211 , C01B21/0682 , C01B21/0828 , C01B33/021 , C01B33/126 , C01P2002/02 , C07F7/025 , C07F7/10 , C09D1/00 , C09D7/20 , C23C16/18 , C23C16/345 , C23C16/401 , C23C16/45525 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/46 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02219 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02532 , H01L21/0262 , Y10T428/13
Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
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公开(公告)号:US10077364B2
公开(公告)日:2018-09-18
申请号:US15461999
申请日:2017-03-17
Applicant: VERSUM MATERIALS US, LLC
Inventor: Steven Gerard Mayorga , Heather Regina Bowen , Xinjian Lei , Manchao Xiao , Haripin Chandra , Anupama Mallikarjunan , Ronald Martin Pearlstein
IPC: C09D1/00 , H01L21/02 , C01B33/021 , C01B33/12 , C01B21/068 , C01B21/082 , C07F7/02 , C23C16/40 , C23C16/455
CPC classification number: H01L21/02211 , C01B21/0682 , C01B21/0828 , C01B33/021 , C01B33/126 , C01P2002/02 , C07F7/025 , C07F7/10 , C09D1/00 , C09D7/20 , C23C16/18 , C23C16/345 , C23C16/401 , C23C16/45525 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/46 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02219 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02532 , H01L21/0262 , Y10T428/13
Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
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17.
公开(公告)号:US20180244524A1
公开(公告)日:2018-08-30
申请号:US15901099
申请日:2018-02-21
Applicant: National University of Singapore
Inventor: Barbaros OZYILMAZ , Carlo Mendoza OROFEO , Henrik ANDERSEN , Hongji ZHANG , Chee Tat TOH , Inigo MARTIN-FERNANDEZ
CPC classification number: C01B32/05 , A61L27/08 , A61L27/303 , A61L27/50 , A61L2420/02 , C01P2002/02 , C01P2002/04 , C01P2002/20 , C01P2006/40 , C12N5/0602 , C12N2501/10 , C12N2533/00
Abstract: Described is a composite material composed of an atomically thin (single layer) amorphous carbon disposed on top of a substrate (metal, glass, oxides) and methods of growing and differentiating stem cells.
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公开(公告)号:US20180194641A1
公开(公告)日:2018-07-12
申请号:US15714158
申请日:2016-03-29
Applicant: The Shepherd Color Company
Inventor: Christopher Wade Beier , William Michael Yuhasz , Mary Elizabeth Hillegass , Michael David Musick
CPC classification number: C01F17/0018 , B82Y30/00 , C01B33/12 , C01F17/0025 , C01F17/0043 , C01G9/02 , C01G23/006 , C01G23/047 , C01G39/02 , C01G51/04 , C01P2002/02 , C01P2002/60 , C01P2002/84 , C01P2004/04 , C01P2004/54 , C01P2004/61 , C01P2004/62 , C01P2004/82 , C01P2004/84 , C01P2006/60 , C01P2006/62 , C01P2006/63 , C01P2006/64 , C09C1/0081 , C09C1/3045 , C09C3/063
Abstract: A composite material comprising an amorphous, porous material with nanocrystalline material in its pores has been found to be a UV absorber. The porous material is a matrix of pores that act as a scaffold for the nanocrystalline material. The particles of the nanocrystalline material are isolated, which mean that they do not connect to each other. In some embodiments, the nanocrystalline material is completely inside the pores of the porous material. In some embodiments, the nanocrystalline material may stick out of some or all of the pores of the porous material. In some embodiments, the nanocrystalline material is a cerium oxide material. In some embodiments, the nanocrystallite ranges in size from 2 to about 100 nm on its longest axis, with an aspect ratio from about 1 to about 1.5.
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公开(公告)号:US10011496B2
公开(公告)日:2018-07-03
申请号:US15107769
申请日:2015-02-23
Applicant: ELKEM AS
Inventor: Bjorn Myhre , Magne Dastol
IPC: C01B33/18
CPC classification number: C01B33/182 , C01P2002/02 , C01P2004/32 , C01P2006/12
Abstract: The present invention relates to a process for producing spherical submicron particles of amorphous silicon dioxide, in which silicon dioxide and a reducing agent is injected into a reaction vessel of zirconium oxide in molten state, said zirconium oxide is serving as a heat reservoir, in which silicon dioxide reacts with the reducing agent producing a silicon-sub-oxide vapor, said silicon-sub-oxide vapor is oxidized into said spherical submicron silicon oxide particles.
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公开(公告)号:US09997350B2
公开(公告)日:2018-06-12
申请号:US15459389
申请日:2017-03-15
Applicant: VERSUM MATERIALS US, LLC
Inventor: Manchao Xiao , Xinjian Lei , Daniel P. Spence , Haripin Chandra , Bing Han , Mark Leonard O'Neill , Steven Gerard Mayorga , Anupama Mallikarjunan
IPC: C07F1/00 , H01L21/02 , C09D1/00 , C09D7/00 , C01B33/021 , C01B33/12 , C07F7/10 , C23C16/34 , C23C16/455
CPC classification number: H01L21/02211 , C01B21/0682 , C01B21/0828 , C01B33/021 , C01B33/126 , C01P2002/02 , C07F7/025 , C07F7/10 , C09D1/00 , C09D7/20 , C23C16/18 , C23C16/345 , C23C16/401 , C23C16/45525 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/46 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02219 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02532 , H01L21/0262 , Y10T428/13
Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
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