Abstract:
An electrode having a gas discharge function, where the degree of freedom related to a maximum gas flow rate is abundant, an electrode cover member may be thinned, and a change of a gas behavior according to time is difficult to be generated in a processing chamber during gas introduction. The electrode includes: a base material having a plurality of gas holes; and an electrode cover member having a plurality of gas holes respectively corresponding to the plurality of gas holes of the base material in a one-to-one manner, fixed to the base material, and disposed facing a processing space in which the object is plasma-processed, wherein a gas hole diameter of the electrode cover member is larger than a gas hole diameter of the base material.
Abstract:
A target for sputtering which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell. A oxide sintered body includes an indium oxide and a cerium oxide, and one or more oxide of titanium, zirconium, hafnium, molybdenum and tungsten. The cerium content is 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce+M), the M element content is equal to or lower than 1% by atom, as an atomicity ratio of M/(In+Ce+M), and the total content of cerium and the M element is equal to or lower than 9% by atom, as an atomicity ratio of (Ce+M)/(In+Ce+M). The oxide sintered body has an In2O3 phase of a bixbyite structure has a CeO2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm.
Abstract translation:能够实现适合于蓝色LED或太阳能电池的透明导电膜的高速成膜的溅射靶。 氧化物烧结体包括氧化铟和氧化铈,以及一种或多种钛,锆,铪,钼和钨的氧化物。 铈含量为原子数为0.3〜9原子数,以Ce /(In + Ce + M)的原子数比计,M元素含量为1原子%以下,原子比为M /(In + Ce + M),并且铈和M元素的总含量等于或低于9原子%,作为(Ce + M)/(In + Ce + M)的原子数比。 氧化物烧结体具有二氧化硅结构的In 2 O 3相,其具有以平均粒径为3μm以下的晶粒细分散的萤石型结构的CeO 2相。
Abstract:
An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.
Abstract:
In an electrode assembly, an electrode holder has a forward end thereof affixed coaxially to an electrode tip. An attachment member is affixed to the holder rearwardly of the electrode. A retaining assembly includes an outer cup component, an inner cup component and a magnet therein. An electrical lead is connected to the inner cup component. The electrode assembly fits coaxially into the retaining assembly with the attachment member adjacent to and retained by the magnet. The electrode holder is seated in electrical contact with the inner cup component. The holder, cup components and attachment member are magnetically permeable, and separated in each assembly by insulators, so as to effect an outer magnetic shielding loop and an inner magnetic shielding loop.
Abstract:
A two-valley semiconductor device, biased below the threshold voltage for triggering or sustaining oscillations, is triggered by input pulses to release an output that is an amplified or regenerated form of the input. In another embodiment an analogue signal input is encoded into a pulse position modulation train.