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    Plasma Igniter for an Inductively Coupled Plasma Ion Source
    14.
    发明申请
    Plasma Igniter for an Inductively Coupled Plasma Ion Source 有权
    用于电感耦合等离子体离子源的等离子体点火器

    公开(公告)号：US20120032092A1

    公开(公告)日：2012-02-09

    申请号：US13276731

    申请日：2011-10-19

    Applicant: Anthony Graupera ,  Sean Kellogg ,  Tom Miller ,  Dustin Laur ,  Shouyin Zhang ,  Antonius Bastianus Wilhelmus Dirriwachter

    Inventor： Anthony Graupera ,  Sean Kellogg ,  Tom Miller ,  Dustin Laur ,  Shouyin Zhang ,  Antonius Bastianus Wilhelmus Dirriwachter

    IPC: H01J3/14 ,  H05B37/00 ,  H02J1/00 ,  H05B37/02

    CPC classification number: H01J37/08 ,  H01J37/24 ,  H01J2237/0815 ,  H01J2237/31749 ,  H05H1/36

    Abstract: A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.

    Abstract translation: 公开了一种聚焦离子束（FIB）系统，其包括电感耦合等离子体离子源，包含等离子体的绝缘等离子体室，与等离子体接触并被偏压到高电压的导电源偏置电极，以控制离子束能量 样品和多个孔。 等离子体室内的等离子体用作离子柱的虚拟源，该离子柱包括一个或多个在待成像和/或FIB处理的样品的表面上形成聚焦离子束的透镜。 等离子体由安装在塔附近或在柱上的等离子体点火器引发，其在源偏置电极上引起高电压振荡脉冲。 通过将等离子体点火器安装在柱附近，将源偏置电极连接到偏压电源的电缆的电容效应最小化。 通过适当的孔隙材料选择使孔径的离子束溅射最小化。

    Plasma Igniter for an Inductively Coupled Plasma Ion Source
    15.
    发明申请
    Plasma Igniter for an Inductively Coupled Plasma Ion Source 有权
    用于电感耦合等离子体离子源的等离子体点火器

    公开(公告)号：US20110198511A1

    公开(公告)日：2011-08-18

    申请号：US12710602

    申请日：2010-02-23

    Applicant: ANTHONY GRAUPERA ,  Sean Kellogg ,  Tom Miller ,  Dustin Laur ,  Shouyin Zhang

    Inventor： ANTHONY GRAUPERA ,  Sean Kellogg ,  Tom Miller ,  Dustin Laur ,  Shouyin Zhang

    IPC: H01J3/14 ,  H05H1/24

    CPC classification number: H01J37/08 ,  H01J37/24 ,  H01J2237/0815 ,  H01J2237/31749 ,  H05H1/36

    Abstract: A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.

    Abstract translation: 公开了一种聚焦离子束（FIB）系统，其包括电感耦合等离子体离子源，包含等离子体的绝缘等离子体室，与等离子体接触并被偏压到高电压的导电源偏置电极，以控制离子束能量 样品和多个孔。 等离子体室内的等离子体用作离子柱的虚拟源，该离子柱包括一个或多个在待成像和/或FIB处理的样品的表面上形成聚焦离子束的透镜。 等离子体由安装在塔附近或在柱上的等离子体点火器引发，其在源偏置电极上引起高电压振荡脉冲。 通过将等离子体点火器安装在柱附近，将源偏置电极连接到偏压电源的电缆的电容效应最小化。 通过适当的孔隙材料选择使孔径的离子束溅射最小化。

    Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control
    16.
    发明授权
    Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control 有权
    用于宽带离子束产生和控制的共轭ICP和ECR等离子体源

    公开(公告)号：US07999479B2

    公开(公告)日：2011-08-16

    申请号：US12424964

    申请日：2009-04-16

    Applicant: Costel Biloiu ,  Jay Scheuer ,  Alexander Perel

    Inventor： Costel Biloiu ,  Jay Scheuer ,  Alexander Perel

    IPC: H01J7/24 ,  H05H1/24

    CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/065 ,  H01J2237/0815 ,  H01L31/0288 ,  H01L31/1804 ,  H01L31/206 ,  Y02P70/521

    Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.

    Abstract translation: 公开了一种利用一个或多个等离子体源产生高密度宽带状离子束的离子源。 除了等离子体源之外，离子源还包括扩散室。 扩散室具有沿着与等离子体源的介质柱体相同的轴线定向的提取孔。 在一个实施例中，位于扩散室的相对端上的双等离子体源用于产生更均匀的提取离子束。 在另一实施例中，使用多脉冲磁场来进一步提高所提取的离子束的均匀性。

    CONJUGATED ICP AND ECR PLASMA SOURCES FOR WIDE RIBBON ION BEAM GENERATION AND CONTROL
    17.
    发明申请
    CONJUGATED ICP AND ECR PLASMA SOURCES FOR WIDE RIBBON ION BEAM GENERATION AND CONTROL 有权
    连接ICP和ECR等离子体源用于大量离子束生成和控制

    公开(公告)号：US20100264328A1

    公开(公告)日：2010-10-21

    申请号：US12424964

    申请日：2009-04-16

    Applicant: Costel Biloiu ,  Jay Scheuer ,  Alexander Perel

    Inventor： Costel Biloiu ,  Jay Scheuer ,  Alexander Perel

    IPC: H01J27/00

    CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/065 ,  H01J2237/0815 ,  H01L31/0288 ,  H01L31/1804 ,  H01L31/206 ,  Y02P70/521

    Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.

    Abstract translation: 公开了一种利用一个或多个等离子体源产生高密度宽带状离子束的离子源。 除了等离子体源之外，离子源还包括扩散室。 扩散室具有沿着与等离子体源的介质柱体相同的轴线定向的提取孔。 在一个实施例中，位于扩散室的相对端上的双等离子体源用于产生更均匀的提取离子束。 在另一实施例中，使用多脉冲磁场来进一步提高所提取的离子束的均匀性。

    Ion source and method for operating same
    18.
    发明授权
    Ion source and method for operating same 有权
    离子源和操作方法

    公开(公告)号：US07718978B2

    公开(公告)日：2010-05-18

    申请号：US12097779

    申请日：2007-05-17

    Applicant: Takatoshi Yamashita

    Inventor： Takatoshi Yamashita

    IPC: H01J49/10 ,  H01J37/32 ,  H01J49/14

    CPC classification number: H01J27/14 ,  H01J37/08 ,  H01J2237/0815 ,  H01J2237/24542 ,  H01J2237/30472 ,  H01J2237/31701

    Abstract: An ion source is provided that can generate an ion beam in which the width is wide, the beam current is large, and the uniformity of the beam current distribution in the width direction is high, and that can prolong the lifetime of a cathode. The ion source 2a has: a plasma generating chamber 6 having an ion extraction port 8 extending in the X direction; a magnet 14 which generates a magnetic field 16 extending along the X direction, in the plasma generating chamber 6; indirectly-heated cathodes 20 which are placed respectively on the both sides of the plasma generating chamber 6 in the X direction, and which are used for generating a plasma i0 in the chamber 6, and increasing or decreasing the density of the whole of the plasma 10; and plural filament cathodes 32 which are juxtaposed in the X direction in the plasma generating chamber 6, and which are used for generating the plasma i0 in the chamber 6, and controlling the density distribution of the plasma 10.

    Abstract translation: 提供一种可以产生宽度宽的离子束，束流量大，宽度方向的束流分布均匀性高的离子源，能够延长阴极的使用寿命。 离子源2a具有：等离子体产生室6，其具有在X方向上延伸的离子提取口8; 在等离子体产生室6中产生沿着X方向延伸的磁场16的磁铁14; 间接加热的阴极20，它们分别放置在等离子体发生室6的X方向的两侧，用于在室6中产生等离子体i0，并且增加或减少整个等离子体的密度 10; 以及多个长丝阴极32，它们在等离子体发生室6中沿X方向并置，并用于在室6中产生等离子体i0，并控制等离子体10的密度分布。

    Method and Apparatus For Generating Ion Beam
    19.
    发明申请
    Method and Apparatus For Generating Ion Beam 有权
    用于产生离子束的方法和装置

    公开(公告)号：US20090200485A1

    公开(公告)日：2009-08-13

    申请号：US12087673

    申请日：2007-01-14

    Applicant: Eli Kolodney ,  Anatoly Bekkerman ,  Boris Tsipinyuk ,  Yonatan Manor

    Inventor： Eli Kolodney ,  Anatoly Bekkerman ,  Boris Tsipinyuk ,  Yonatan Manor

    IPC: H01J27/00 ,  H01T23/00

    CPC classification number: H01J37/08 ,  H01J2237/0815

    Abstract: A device for replenishing ionizable material in a field ionization apparatus is disclosed. The device comprises a heatable reservoir containing the ionizable material, a field ionization electrode structure, and a channel being in fluid communication with said heatable reservoir. The heatable reservoir and the channel are designed and constructed such that when the heatable reservoir is heated to an evaporation temperature of the ionizable material, a flux of vaporized ionizable material is directed along the channel to a tip of the field ionization electrode structure.

    Abstract translation: 公开了一种用于在场电离装置中补充可电离材料的装置。 该装置包括容纳可电离材料的可加热储存器，场电离电极结构和与所述可加热储存器流体连通的通道。 可加热储存器和通道被设计和构造成使得当可加热储存器被加热到​​可电离材料的蒸发温度时，汽化的可离子化材料的通量被引导到场离子化电极结构的尖端。

    FOCUSED ION BEAM FIELD SOURCE
    20.
    发明申请
    FOCUSED ION BEAM FIELD SOURCE 有权
    聚焦离子束场源

    公开(公告)号：US20090114838A1

    公开(公告)日：2009-05-07

    申请号：US12251917

    申请日：2008-10-15

    Applicant: Paulo Lozano ,  Manuel Martinez-Sanchez

    Inventor： Paulo Lozano ,  Manuel Martinez-Sanchez

    IPC: H01J3/14 ,  H01J27/00

    CPC classification number: H01J3/04 ,  H01J27/26 ,  H01J37/08 ,  H01J2237/0048 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/0822 ,  H01J2237/31749

    Abstract: An apparatus for producing ions can include an emitter having a first end and a second end. The emitter can be coated with an ionic liquid room-temperature molten salt. The apparatus can also include a power supply and a first electrode disposed downstream relative to the first end of the emitter and electrically connected to a first lead of the power supply. The apparatus can also include a second electrode disposed downstream relative to the second end of the emitter and electrically connected to a second lead of the power supply.

    Abstract translation: 用于产生离子的装置可以包括具有第一端和第二端的发射体。 发射体可以用离子液体室温熔融盐涂覆。 该装置还可以包括电源和设置在发射器的第一端的下游并电连接到电源的第一引线的第一电极。 该装置还可以包括设置在发射器的第二端的下游并电连接到电源的第二引线的第二电极。

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