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公开(公告)号:US12183961B2
公开(公告)日:2024-12-31
申请号:US17403571
申请日:2021-08-16
Applicant: Intel Corporation
Inventor: Aleksandar Aleksov , Georgios C. Dogiamis , Telesphor Kamgaing , Sasha N. Oster , Adel A. Elsherbini , Shawna M. Liff , Johanna M. Swan , Brandon M. Rawlings , Richard J. Dischler
Abstract: A method of forming a waveguide comprises forming an elongate waveguide core including a dielectric material; and arranging a conductive sheet around an outside surface of the dielectric core to produce a conductive layer around the waveguide core.
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公开(公告)号:US12176223B2
公开(公告)日:2024-12-24
申请号:US18502244
申请日:2023-11-06
Applicant: Intel Corporation
Inventor: Kristof Kuwawi Darmawikarta , Robert May , Sri Ranga Sai Boyapati , Srinivas V. Pietambaram , Chung Kwang Christopher Tan , Aleksandar Aleksov
IPC: H01L21/48 , H01L23/498
Abstract: Disclosed herein are integrated circuit (IC) package supports and related apparatuses and methods. For example, in some embodiments, a method for forming an IC package support may include forming a first dielectric material having a surface; forming a first conductive via in the first dielectric material, wherein the first conductive via has tapered sidewalls with an angle that is equal to or less than 80 degrees relative to the surface of the first dielectric material; forming a second dielectric material, having a surface, on the first dielectric material; and forming a second conductive via in the second dielectric material, wherein the second conductive via is electrically coupled to the first conductive via, has tapered sidewalls with an angle that is greater than 80 degrees relative to the surface of the second dielectric material, and a maximum diameter between 2 microns and 20 microns.
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公开(公告)号:US20240339410A1
公开(公告)日:2024-10-10
申请号:US18746188
申请日:2024-06-18
Applicant: Intel Corporation
Inventor: Aleksandar Aleksov , Adel A. Elsherbini , Shawna M. Liff , Johanna M. Swan , Feras Eid , Randy B. Osborne , Van H. Le
IPC: H01L23/538 , H01L23/49 , H01L25/065
CPC classification number: H01L23/5384 , H01L23/49 , H01L23/5385 , H01L23/5386 , H01L25/0657
Abstract: Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component, including an organic dielectric material; a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes metal contacts and a dielectric material between adjacent ones of the metal contacts, and wherein the dielectric material includes an inorganic dielectric material; and a third microelectronic component coupled to the first microelectronic component by wire bonding or solder.
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公开(公告)号:US12107060B2
公开(公告)日:2024-10-01
申请号:US17025843
申请日:2020-09-18
Applicant: Intel Corporation
Inventor: Adel A. Elsherbini , Zhiguo Qian , Gerald S. Pasdast , Mohammad Enamul Kabir , Han Wui Then , Kimin Jun , Kevin P. O'Brien , Johanna M. Swan , Shawna M. Liff , Aleksandar Aleksov , Feras Eid
IPC: H01L23/00 , H01L25/065 , H01L49/02
CPC classification number: H01L24/08 , H01L24/05 , H01L24/29 , H01L24/32 , H01L25/0657 , H01L28/10 , H01L2224/05147 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/0801 , H01L2224/08145 , H01L2224/0903 , H01L2224/09055 , H01L2224/29186 , H01L2224/32145
Abstract: Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes at least part of an inductor.
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公开(公告)号:US11990448B2
公开(公告)日:2024-05-21
申请号:US17025709
申请日:2020-09-18
Applicant: Intel Corporation
Inventor: Feras Eid , Adel A. Elsherbini , Aleksandar Aleksov , Shawna M. Liff , Johanna M. Swan
IPC: H01L25/065 , H01L23/00
CPC classification number: H01L25/0655 , H01L24/06 , H01L24/08 , H01L24/09 , H01L24/17 , H01L24/29 , H01L24/30 , H01L25/0652 , H01L2224/08225 , H01L2224/09177 , H01L2224/81
Abstract: Disclosed herein are microelectronic assemblies including direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes a first subregion and a second subregion, and the first subregion has a greater metal density than the second subregion. In some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes a first metal contact and a second metal contact, the first metal contact has a larger area than the second metal contact, and the first metal contact is electrically coupled to a power/ground plane of the first microelectronic component.
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公开(公告)号:US11830787B2
公开(公告)日:2023-11-28
申请号:US16532956
申请日:2019-08-06
Applicant: Intel Corporation
Inventor: Feras Eid , Telesphor Kamgaing , Georgios Dogiamis , Aleksandar Aleksov , Johanna M. Swan
IPC: H01L23/38 , H01L25/18 , H01L23/00 , H03H9/205 , H01L23/14 , H01L23/538 , H01L23/66 , H01L23/31 , H01L23/427 , H03H9/05 , H03H9/02 , H01L23/498 , H10N10/17 , H10N30/88 , H10N39/00 , H01L23/552
CPC classification number: H01L23/38 , H01L23/145 , H01L23/3128 , H01L23/427 , H01L23/49816 , H01L23/5384 , H01L23/5386 , H01L23/66 , H01L24/16 , H01L25/18 , H03H9/02102 , H03H9/0514 , H03H9/205 , H10N10/17 , H10N30/883 , H10N39/00 , H01L23/552 , H01L24/32 , H01L24/33 , H01L24/73 , H01L2223/6644 , H01L2224/16227 , H01L2224/32225 , H01L2224/33181 , H01L2224/73204 , H01L2224/73253 , H01L2924/3025 , H01L2924/30111
Abstract: Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.
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公开(公告)号:US11824008B2
公开(公告)日:2023-11-21
申请号:US17956761
申请日:2022-09-29
Applicant: Intel Corporation
Inventor: Henning Braunisch , Chia-Pin Chiu , Aleksandar Aleksov , Hinmeng Au , Stefanie M. Lotz , Johanna M. Swan , Sujit Sharan
IPC: H01L23/538 , H01L23/13 , H01L23/00 , H01L25/065 , H01L21/683
CPC classification number: H01L23/5385 , H01L23/13 , H01L23/5381 , H01L24/14 , H01L24/73 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L21/6835 , H01L24/17 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/81 , H01L2224/0401 , H01L2224/13099 , H01L2224/141 , H01L2224/1403 , H01L2224/16145 , H01L2224/16225 , H01L2224/17181 , H01L2224/32245 , H01L2224/45099 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/49175 , H01L2224/73207 , H01L2224/73253 , H01L2224/81001 , H01L2224/81005 , H01L2224/81801 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06562 , H01L2924/00011 , H01L2924/00014 , H01L2924/014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01076 , H01L2924/01079 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/12042 , H01L2924/1461 , H01L2924/15153 , H01L2924/19107 , H01L2924/351 , H01L2224/48091 , H01L2924/00014 , H01L2224/49175 , H01L2224/48227 , H01L2924/00 , H01L2224/45147 , H01L2924/00 , H01L2924/01015 , H01L2924/00 , H01L2924/1461 , H01L2924/00 , H01L2924/00014 , H01L2224/45099 , H01L2924/12042 , H01L2924/00 , H01L2924/00014 , H01L2224/0401 , H01L2924/00011 , H01L2924/01005 , H01L2924/00011 , H01L2224/0401
Abstract: A multi-chip package includes a substrate (110) having a first side (111), an opposing second side (112), and a third side (213) that extends from the first side to the second side, a first die (120) attached to the first side of the substrate and a second die (130) attached to the first side of the substrate, and a bridge (140) adjacent to the third side of the substrate and attached to the first die and to the second die. No portion of the substrate is underneath the bridge. The bridge creates a connection between the first die and the second die. Alternatively, the bridge may be disposed in a cavity (615, 915) in the substrate or between the substrate and a die layer (750). The bridge may constitute an active die and may be attached to the substrate using wirebonds (241, 841, 1141, 1541).
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公开(公告)号:US11756948B2
公开(公告)日:2023-09-12
申请号:US16400768
申请日:2019-05-01
Applicant: Intel Corporation
Inventor: Thomas Sounart , Aleksandar Aleksov , Henning Braunisch
IPC: H01L27/01 , H01L21/47 , H01L23/522 , H01L49/02
CPC classification number: H01L27/016 , H01L21/47 , H01L23/5223 , H01L23/5226 , H01L28/75
Abstract: Embodiments described herein are directed to a thin film capacitor (TFC) for power delivery that is in situ in a package substrate and techniques of fabricating the TFC. In one example, the TFC includes a first electrode, a dielectric layer over the first electrode, and a second electrode over the dielectric layer. Each of the dielectric layer and the second electrode comprises an opening. Furthermore, the two openings are positioned over one another such that the openings expose a surface of the first electrode. In this example, a first vertical interconnect access (via) is positioned on the exposed surface of the first electrode and a second via is positioned on an exposed surface of the second electrode. The TFC can be positioned in or on a layer of the package substrate close to a component (e.g., a die, a die stack, etc.) on the package substrate that may require a decoupling capacitance.
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公开(公告)号:US11751367B2
公开(公告)日:2023-09-05
申请号:US17468510
申请日:2021-09-07
Applicant: Intel Corporation
Inventor: Veronica Aleman Strong , Johanna M. Swan , Aleksandar Aleksov , Adel A. Elsherbini , Feras Eid
CPC classification number: H05K9/0079 , C08G61/126 , C08G73/0611 , C08G85/004 , H01L21/4867 , H01L23/60 , C08G2261/1424 , C08G2261/3223 , C08G2261/514 , C08G2261/78 , H01L23/498
Abstract: Embodiments may relate to a microelectronic package comprising: a die and a package substrate coupled to the die with a first interconnect on a first face. The package substrate comprises: a second interconnect and a third interconnect on a second face opposite to the first face; a conductive signal path between the first interconnect and the second interconnect; a conductive ground path between the second interconnect and the third interconnect; and an electrostatic discharge (ESD) protection material coupled to the conductive ground path. The ESD protection material comprises a first electrically-conductive carbon allotrope having a first functional group, a second electrically-conductive carbon allotrope having a second functional group, and an electrically-conductive polymer chemically bonded to the first functional group and the second functional group permitting an electrical signal to pass between the first and second electrically-conductive carbon allotropes.
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公开(公告)号:US20230198058A1
公开(公告)日:2023-06-22
申请号:US17556784
申请日:2021-12-20
Applicant: Intel Corporation
Inventor: Veronica Strong , Telesphor Kamgaing , Neelam Prabhu Gaunkar , Georgios Dogiamis , Aleksandar Aleksov , Brandon Rawlings
IPC: H01M50/117 , H01L23/58
CPC classification number: H01M50/117 , H01L23/58
Abstract: Embedded batteries within glass cores are disclosed. Example apparatus include a glass core layer having opposing first and second surfaces, the glass core layer including a cavity extending from the first surface toward the second surface, and a battery including a first conductive material positioned in the cavity, a second conductive material positioned in the cavity, and an electrolyte to separate the first conductive material from the second conductive material.
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