公开(公告)号：US20130171816A1

公开(公告)日：2013-07-04

申请号：US13340275

申请日：2011-12-29

Applicant: Yonggang Jin

Inventor： Yonggang Jin

IPC: H01L21/768 ,  B23K3/06

CPC classification number: H01L24/11 ,  B23K3/0623 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/11005 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A system and process for forming a ball grid array on a substrate includes defining a plurality of openings in a resist layer on the substrate, and forming a plurality of openings in the resist layer, each positioned over a contact pad of the substrate. Flux is then deposited in the openings, and solder balls are positioned in each opening with the flux. Solder bumps are formed by reflowing the solder balls in the respective openings. The resist layer is then removed, leaving an array of solder bumps on the substrate. The flux can be deposited by depositing a layer of flux, then removing the flux, except a portion that remains in each opening. Solder balls can be positioned by moving a ball feeder across the resist layer and dropping a solder ball each time an aperture in the ball feeder aligns with an opening in the resist layer.

Abstract translation: 用于在衬底上形成球栅阵列的系统和方法包括在衬底上的抗蚀剂层中限定多个开口，并且在抗蚀剂层中形成多个开口，每个位于衬底的接触焊盘上方。 然后将焊剂沉积在开口中，并且焊剂球通过焊剂位于每个开口中。 通过在相应的开口中回流焊球来形成焊料凸点。 然后去除抗蚀剂层，留下衬底上的焊料凸块阵列。 可以通过沉积一层焊剂，然后除去焊剂，除了保留在每个开口中的部分之外，可以沉积焊剂。 焊球可以通过使球进料器横过抗蚀剂层移动而定位，并且每当球进料器中的孔与抗蚀剂层中的开口对准时，下降焊球。

公开(公告)号：US20130168858A1

公开(公告)日：2013-07-04

申请号：US13722776

申请日：2012-12-20

Applicant: STMicroelectronics Pte Ltd.

Inventor： Anandan Ramasamy ,  Yonggang Jin ,  Yun Liu

IPC: H01L21/56 ,  H01L23/498

CPC classification number: H01L21/565 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/49838 ,  H01L24/19 ,  H01L24/96 ,  H01L25/105 ,  H01L2224/12105 ,  H01L2224/96 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2924/00

Abstract: A bar formed from a reconstituted wafer and containing one or more conductive material filled voids is used to electrically and physically connect the top and bottom packages in a package-on-package (PoP) package. The bar is disposed in the fan out area of the lower package forming the PoP package.

Abstract translation: 由重构的晶片形成并包含一个或多个导电材料填充的空隙的条被用于电和物理地连接封装在封装（PoP）封装中的顶部和底部封装。 该条被布置在形成PoP包装的下部包装的扇形区域中。

公开(公告)号：US20130139587A1

公开(公告)日：2013-06-06

申请号：US13310477

申请日：2011-12-02

Applicant: Olivier Le Neel ,  Suman Cherian ,  Ravi Shankar ,  Boon Nam Poh ,  Sebastien Marsanne ,  Michele Vaiana

Inventor： Olivier Le Neel ,  Suman Cherian ,  Ravi Shankar ,  Boon Nam Poh ,  Sebastien Marsanne ,  Michele Vaiana

IPC: G01N27/22 ,  B05D3/10 ,  C23F1/02 ,  B05D5/12

CPC classification number: G01N27/223

Abstract: A capacitive humidity sensor includes a first electrode, a humidity sensitive dielectric layer, and a second electrode. The humidity sensitive dielectric layer is between the first and the second electrodes. The humidity sensitive dielectric layer is etched at selected regions to form hollow regions between the first and second electrodes.

Abstract translation: 电容式湿度传感器包括第一电极，湿度敏感介电层和第二电极。 湿敏电介质层位于第一和第二电极之间。 在选定的区域蚀刻湿度敏感的介电层，以在第一和第二电极之间形成中空区域。

公开(公告)号：US20130121057A1

公开(公告)日：2013-05-16

申请号：US13296628

申请日：2011-11-15

Applicant: Olivier Le Neel

Inventor： Olivier Le Neel

IPC: G11C11/21

CPC classification number: G11C13/0002 ,  G11C11/21 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/008 ,  G11C2213/33 ,  G11C2213/71

Abstract: An integrated circuit is formed having an array of memory cells located in the dielectric stack above a semiconductor substrate. Each memory cell has two adjustable resistors and two heating elements. A dielectric material separates the heating elements from the adjustable resistors. One heating element alters the resistance of one of the resistors by applying heat thereto to write data to the memory cell. The other heating element alters the resistance of the other resistor by applying heat thereto to erase data from the memory cell.

公开(公告)号：US20130119282A1

公开(公告)日：2013-05-16

申请号：US13670766

申请日：2012-11-07

Applicant: STMicroelectronics Pte Ltd.

Inventor： Yonggang Jin ,  Wee Chin Judy Lim

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L31/16 ,  G01S7/4813 ,  G01S17/026 ,  G01V8/12 ,  H01L21/568 ,  H01L25/167 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/167 ,  H01L31/18 ,  H01L31/186 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/19 ,  H01L2924/3511 ,  H03K17/941 ,  H03K17/9631 ,  H03K17/9638 ,  H03K2217/96023 ,  Y10T156/1052 ,  Y10T156/1064

Abstract: An optical detection sensor and method of forming same. The optical detection sensor be a proximity detection sensor that includes an optical system and a selectively transmissive structure. Electromagnetic radiation such as laser light can be emitted through a transmissive portion of the selectively transmissive structure. A reflected beam can be detected to determine the presence of an object.

Abstract translation: 一种光学检测传感器及其形成方法。 光学检测传感器是包括光学系统和选择性透射结构的接近检测传感器。 诸如激光的电磁辐射可以通过选择性透射结构的透射部分发射。 可以检测反射光束以确定物体的存在。

公开(公告)号：US20120170352A1

公开(公告)日：2012-07-05

申请号：US12981379

申请日：2010-12-29

Applicant: Olivier Le Neel ,  Jean Jimenez

Inventor： Olivier Le Neel ,  Jean Jimenez

IPC: G11C11/00 ,  H01L21/02 ,  H01L45/00

CPC classification number: G11C13/0069 ,  G11C11/5692 ,  G11C17/18 ,  G11C2013/008 ,  G11C2213/33 ,  H01L27/101 ,  H01L27/1052 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2481 ,  H01L28/20 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/14 ,  H01L45/148

Abstract: An integrated circuit is formed having an array of memory cells located in the dielectric stack above a semiconductor substrate. Each memory cell has an adjustable resistor and a heating element. A dielectric material separates the heating element from the adjustable resistor. The heating element alters the resistance of the resistor by applying heat thereto. The magnitude of the resistance of the adjustable resistor represents the value of data stored in the memory cell.

Abstract translation: 形成集成电路，其具有位于半导体衬底上方的电介质堆叠中的存储器单元的阵列。 每个存储单元具有可调电阻器和加热元件。 电介质材料将加热元件与可调电阻器分开。 加热元件通过向其施加热量来改变电阻器的电阻。 可调电阻器的电阻的大小表示存储在存储单元中的数据的值。

公开(公告)号：US20120168944A1

公开(公告)日：2012-07-05

申请号：US13098083

申请日：2011-04-29

Applicant: Kah Wee Gan ,  Yonggang Jin ,  Yun Liu ,  Yaohuang Huang

Inventor： Kah Wee Gan ,  Yonggang Jin ,  Yun Liu ,  Yaohuang Huang

IPC: H01L23/498 ,  H01L21/50 ,  H01L21/768

CPC classification number: H01L24/19 ,  H01L21/486 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76868 ,  H01L21/76873 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/20 ,  H01L24/24 ,  H01L24/82 ,  H01L24/96 ,  H01L25/105 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2225/1035 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2924/00013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

Abstract: An embedded wafer level ball grid array (eWLB) is formed by embedding a semiconductor die in a molding compound. A trench is formed in the molding compound with a laser drill. A first layer of copper is deposited on the sidewall of the trench by physical vapor deposition. A second layer of copper is then formed on the first layer of copper by an electroless process. A third layer of copper is then formed on the second layer by electroplating.

公开(公告)号：US20120168942A1

公开(公告)日：2012-07-05

申请号：US12982697

申请日：2010-12-30

Applicant: Kah Wee Gan ,  Yonggang Jin ,  Yun Liu ,  Yaohuang Huang

Inventor： Kah Wee Gan ,  Yonggang Jin ,  Yun Liu ,  Yaohuang Huang

IPC: H01L23/498 ,  H05K3/00 ,  H05K3/34 ,  H05K3/42

CPC classification number: H01L25/105 ,  H01L21/486 ,  H01L21/568 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  Y10T29/413 ,  Y10T29/49144 ,  Y10T29/49165 ,  H01L2924/00

Abstract: An embedded wafer level ball grid array (eWLB) is formed by embedding a semiconductor die in a molding compound. A trench is formed in the molding compound with a laser drill. A first layer of copper is deposited on the sidewall of the trench by physical vapor deposition. A second layer of copper is then formed on the first layer of copper by an electroless process. A third layer of copper is then formed on the second layer by electroplating.

Abstract translation: 嵌入式晶片级球栅阵列（eWLB）通过将半导体管芯嵌入到模塑料中而形成。 在激光钻头的模塑料中形成沟槽。 第一层铜通过物理气相沉积沉积在沟槽的侧壁上。 然后通过无电解方法在第一层铜上形成第二层铜层。 然后通过电镀在第二层上形成第三层铜层。

公开(公告)号：US20120168938A1

公开(公告)日：2012-07-05

申请号：US13327563

申请日：2011-12-15

Applicant: Kah Wee Gan ,  Yonggang Jin ,  Anandan Ramasamy ,  Yun Liu

Inventor： Kah Wee Gan ,  Yonggang Jin ,  Anandan Ramasamy ,  Yun Liu

IPC: H01L23/488 ,  H01L21/78

CPC classification number: H01L21/3105 ,  H01L21/31116 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/12105 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00

Abstract: A semiconductor wafer has integrated circuits formed thereon and a top passivation layer applied. The passivation layer is patterned and selectively etched to expose contact pads on each semiconductor die. The wafer is exposed to ionized gas causing the upper surface of passivation layer to roughen and to slightly roughen the upper surface of the contact pads. The wafer is cut to form a plurality of semiconductor dies each with a roughened passivation layer. The plurality of semiconductor dies are placed on an adhesive layer and a reconstituted wafer formed. Redistribution layers are formed to complete the semiconductor package having electrical contacts for establishing electrical connections external to the semiconductor package, after which the wafer is singulated to separate the dice.

Abstract translation: 半导体晶片具有形成在其上的集成电路和施加的顶部钝化层。 钝化层被图案化并选择性地蚀刻以暴露每个半导体管芯上的接触焊盘。 将晶片暴露于电离气体中，导致钝化层的上表面变粗糙，并使接触垫的上表面略微变糙。 切割晶片以形成多个具有粗糙化钝化层的半导体管芯。 多个半导体管芯被放置在粘合剂层上并形成重构的晶片。 形成再分布层，以完成具有用于建立半导体封装外部的电连接的电触头的半导体封装，然后将晶片单分割以分离晶片。

公开(公告)号：US20120168888A1

公开(公告)日：2012-07-05

申请号：US13029665

申请日：2011-02-17

Applicant: JING-EN LUAN ,  JUNYONG CHEN

Inventor： JING-EN LUAN ,  JUNYONG CHEN

IPC: H01L31/0232 ,  H01L31/18 ,  H01L31/0203

CPC classification number: H01L27/14618 ,  H01L2224/48091 ,  H01L2224/73265 ,  H04N5/2253 ,  H04N5/2257 ,  H01L2924/00014

Abstract: A process of forming optical sensors includes sealing an imaging portion of each of a plurality of optical sensors on a sensor wafer with a transparent material. The operation of sealing leaves a bonding portion of each of the optical sensors exposed. The process further includes cutting the wafer into a plurality of image sensor dies after sealing the optical sensors such that each image sensor die includes one of the optical sensors sealed with a corresponding portion of the transparent material.

Abstract translation: 形成光学传感器的过程包括用透明材料密封传感器晶片上的多个光学传感器中的每一个的成像部分。 密封的操作使每个光学传感器的接合部分暴露出来。 该方法还包括在密封光学传感器之后将晶片切割成多个图像传感器管芯，使得每个图像传感器管芯包括用透明材料的相应部分密封的一个光学传感器。