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    Photoresist formulation for high aspect ratio plating
    21.
    发明申请
    Photoresist formulation for high aspect ratio plating 失效

    公开(公告)号：US20060141394A1

    公开(公告)日：2006-06-29

    申请号：US11362695

    申请日：2006-02-27

    Applicant: Treliant Fang

    Inventor： Treliant Fang

    IPC: G03C1/76

    CPC classification number: G03F7/0385 ,  G03F7/0751 ,  G03F7/085 ,  Y10S430/113 ,  Y10S430/128 ,  Y10S430/155

    Abstract: SU-8 photoresist compositions are modified to improve their adhesion properties by adding 1% to 6% of an adhesion promoter selected from the group consisting of glycidoxypropanetrimethoxysilane, mercatopropyltrimethoxysilane, and aminopropyltrimethoxysilane. SU-8 photoresist compositions are modified to improve their resistance to cracking and film stress by adding 0.5% to 3% of a plasticizer selected from the group consisting of dialkylphthalates, dialkylmalonates, dialkylsebacates, dialkyladipates, and diglycidyl hexahydrophthalates. The improvements can be obtained simultaneously by adding both the adhesion promoter and the plasticizer to SU-8 photoresist compositions.

    Photoresist formulation for high aspect ratio plating
    22.
    发明授权
    Photoresist formulation for high aspect ratio plating 失效

    公开(公告)号：US07005233B2

    公开(公告)日：2006-02-28

    申请号：US10853858

    申请日：2004-05-26

    Applicant: Treliant Fang

    Inventor： Treliant Fang

    IPC: G03F7/038 ,  G03F7/075 ,  G03F7/085

    CPC classification number: G03F7/0385 ,  G03F7/0751 ,  G03F7/085 ,  Y10S430/113 ,  Y10S430/128 ,  Y10S430/155

    Abstract: SU-8 photoresist compositions are modified to improve their adhesion properties by adding 1% to 6% of an adhesion promoter selected from the group consisting of glycidoxypropanetrimethoxysilane, mercaptopropyltrimethoxysilane, and aminopropyltrimethoxysilane. SU-8 photoresist compositions are modified to improve their resistance to cracking and film stress by adding 0.5% to 3% of a plasticizer selected from the group consisting of dialkylphthalates, dialkylmalonates, dialkylsebacates, dialkyladipates, and diglycidyl hexahydrophthalates. The improvements can be obtained simultaneously by adding both the adhesion promoter and the plasticizer to SU-8 photoresist compositions.

    Stress compensation composition and semiconductor component formed using the stress compensation composition
    24.
    发明授权
    Stress compensation composition and semiconductor component formed using the stress compensation composition 有权
    应力补偿组成和使用应力补偿组成形成的半导体部件

    公开(公告)号：US06458622B1

    公开(公告)日：2002-10-01

    申请号：US09348737

    申请日：1999-07-06

    Applicant: Lizabeth Ann Keser ,  Treliant Fang

    Inventor： Lizabeth Ann Keser ,  Treliant Fang

    IPC: H01L2144

    CPC classification number: H01L24/11 ,  H01L21/02118 ,  H01L21/312 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2224/13099 ,  H01L2924/00014

    Abstract: A semiconductor component (10) having a photodefinable stress compensation layer (21) and composition for the stress compensation material. The photodefinable stress compensation material is formed on a semiconductor wafer (11) and openings (22) are made photolithographically. Conductive bumps (26) are then disposed thereon and additional conductive bumps (28) are formed on the original conductive bumps (26). The photodefinable stress compensation material is composed of a photoinitiator, an epoxy having a first index of refraction, a diluent, and a filler. The indices of refraction of the epoxy-diluent combination and the filler are approximately equal. Alternatively, the photodefinable stress compensation material can be formed on a semiconductor wafer (11) having conductive bumps (46) disposed thereon. Openings (49) are formed in the stress compensation layer (47) to expose the conductive bumps (46). Additional conductive bumps (51) are formed on the original conductive bumps (46).

    Abstract translation: 具有可光分解应力补偿层（21）的半导体部件（10）和用于应力补偿材料的组合物。 可光限定应力补偿材料形成在半导体晶片（11）上，并且光刻地形成开口（22）。 然后将导电凸块（26）设置在其上，并且在原始导电凸块（26）上形成附加的导电凸块（28）。 光可分解应力补偿材料由光引发剂，具有第一折射率的环氧树脂，稀释剂和填料组成。 环氧 - 稀释剂组合和填料的折射率近似相等。 或者，光可分解应力补偿材料可以形成在其上设置有导电凸块（46）的半导体晶片（11）上。 开口（49）形成在应力补偿层（47）中以露出导电凸块（46）。 附加的导电凸块（51）形成在原始导电凸块（46）上。

    Method of making circuit devices comprising a dielectric layer of siloxane-caprolactone
    26.
    发明授权
    Method of making circuit devices comprising a dielectric layer of siloxane-caprolactone 失效
    制造包含硅氧烷 - 己内酯介电层的电路器件的方法

    公开(公告)号：US5326671A

    公开(公告)日：1994-07-05

    申请号：US997058

    申请日：1992-12-28

    Applicant: Paula J. Brown ,  Treliant Fang ,  Jose A. Ors ,  Venkataram R. Raju ,  Akshay V. Shah

    Inventor： Paula J. Brown ,  Treliant Fang ,  Jose A. Ors ,  Venkataram R. Raju ,  Akshay V. Shah

    IPC: G03F7/027 ,  G03F7/029 ,  H01L21/48 ,  H01L23/14 ,  H05K1/00 ,  H05K1/11 ,  H05K3/00 ,  H05K3/46 ,  G03C5/00

    CPC classification number: H01L21/481 ,  G03F7/027 ,  H05K3/4676 ,  H05K2201/0162 ,  H05K3/0023 ,  Y10S428/901 ,  Y10T428/24917

    Abstract: A triazine-based mixture, used as a multichip module device dielectric (14), is made more robust and more resistant to temperature extremes by making it to be of from twenty to sixty percent by weight of triazine and of one to ten percent by weight of siloxane-caprolactone copolymer. The foregoing mixture can be made to have a higher resolution by including zero to twenty percent by weight of novolak epoxy acrylate. The entire mixture preferably additionally comprises two to eight percent by weight of bisphenol-A diglycidyl ether monoepoxyacrylate, zero to twenty percent by weight of carboxyl-terminated butadiene nitrile rubber, two to six percent of N-vinylpyrrolidone, one to ten percent of trimethylolpropanetriacrylate, zero to five weight percent glycidoxypropyltrimethoxysilane, 0.05 to five weight percent photoinitiator, zero to two percent pigment, 0.1 to one percent surfactant, zero to 0.3 percent copper benzoylacetonate, and thirty to fifty percent solvent.

    Abstract translation: 用作多芯片模块装置电介质（14）的三嗪类混合物通过使其为三嗪的二十至百分之六十重量百分比和一至十重量百比重而变得更坚固，更耐极限温度 的硅氧烷 - 己内酯共聚物。 可以通过包括零至20重量％的酚醛清漆环氧丙烯酸酯使上述混合物具有更高的分辨率。 整个混合物优选另外包含2-8重量％的双酚A二缩水甘油醚单环丙基丙烯酸酯，零二十重量％的羧基封端的丁二烯丁腈橡胶，2-6％的N-乙烯基吡咯烷酮，一至十％的三羟甲基丙烷三丙烯酸酯， 0.05至5重量％的缩水甘油氧基丙基三甲氧基硅烷，0.05至5重量％的光引发剂，0至2重量％的颜料，0.1至1％的表面活性剂，0至0.3％的苯甲酰丙酮铜和30至50％的溶剂。

    HALITE SALTS AS SILICON CARBIDE ETCHANTS FOR ENHANCING CMP MATERIAL REMOVAL RATE FOR SIC WAFER
    28.
    发明申请
    HALITE SALTS AS SILICON CARBIDE ETCHANTS FOR ENHANCING CMP MATERIAL REMOVAL RATE FOR SIC WAFER 审中-公开

    公开(公告)号：US20170158911A1

    公开(公告)日：2017-06-08

    申请号：US15332966

    申请日：2016-10-24

    Applicant: Treliant Fang

    Inventor： Treliant Fang

    IPC: C09G1/02 ,  H01L21/02

    CPC classification number: C09G1/02 ,  B24C11/00 ,  C09G1/00 ,  C09G1/04 ,  C09K3/1409 ,  C09K3/1463 ,  C09K3/1472 ,  H01L21/02013 ,  H01L21/02024 ,  H01L21/30625 ,  H01L21/3212

    Abstract: Silicon carbide (SiC) etchants with a generic formula of MXO2, where M is an alkali metal, X is a halogen, O is oxygen are disclosed. When mixed with an abrasive powder in an aqueous slurry form, this MXO2 etchant acts as tribochemical reactant in enhancing the SiC material removal rate during chemical mechanical polishing (CMP). The material removal rates can sometimes go up to a few order of magnitudes, as compared to the slurry without this MXO2 etchant. Typical metal in the formula MXO2 are K (potassium) and Na (sodium), X includes Cl (chlorine), Br (bromine) and I (iodine). The whole series of MXO2 compounds belong to the chemical family of metal halites or ammonium halites. Sodium chlorite, NaClO2, the simplest and most available member of the halite family, is a typical example. The enhanced polishing rate can be utilized to significantly increase the throughput of CMP operation for non-oxide wafer polishing. The polishing waste water from the CMP process can be treated with ease in the waste water treatment facilities because of the absence of toxic heavy metal ions in the polishing formulations.

    ELASTIC ENCAPSULATED CARBON NANOTUBE BASED ELECTRICAL CONTACTS
    29.
    发明申请
    ELASTIC ENCAPSULATED CARBON NANOTUBE BASED ELECTRICAL CONTACTS 有权
    基于碳纳米管的弹性粘合电气联系

    公开(公告)号：US20120086004A1

    公开(公告)日：2012-04-12

    申请号：US13253665

    申请日：2011-10-05

    Applicant: Treliant Fang ,  John K. Gritters ,  Onnik Yaglioglu

    Inventor： Treliant Fang ,  John K. Gritters ,  Onnik Yaglioglu

    IPC: H01L23/544 ,  B82Y99/00

    CPC classification number: G01R1/06744 ,  B82Y10/00 ,  G01R31/2886 ,  H01L2224/13 ,  H01L2924/00013 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

    Abstract: Contacts of an electrical device can be made of carbon nanotube columns. Contact tips can be disposed at ends of the columns. The contact tips can be made of an electrically conductive paste applied to the ends of the columns and cured (e.g., hardened). The paste can be applied, cured, and/or otherwise treated to make the contact tips in desired shapes. The carbon nanotube columns can be encapsulated in an elastic material that can impart the dominant mechanical characteristics, such as spring characteristics, to the contacts. The contacts can be electrically conductive and can be utilized to make pressure-based electrical connections with electrical terminals or other contact structures of another device.

    Abstract translation: 电气装置的触点可以由碳纳米管柱制成。 接触尖端可以放在柱的末端。 接触尖端可以由施加到柱的端部并被固化（例如硬化）的导电浆料制成。 可以施加，固化和/或以其他方式处理糊状物以使接触尖端成为所需形状。 碳纳米管柱可以被包封在弹性材料中，该弹性材料可以赋予触点更大的机械特性，例如弹簧特性。 触点可以是导电的，并且可以用于与电端子或另一器件的其它接触结构进行基于压力的电连接。

    CARBON NANOTUBE COLUMNS AND METHODS OF MAKING AND USING CARBON NANOTUBE COLUMNS AS PROBES
    30.
    发明申请
    CARBON NANOTUBE COLUMNS AND METHODS OF MAKING AND USING CARBON NANOTUBE COLUMNS AS PROBES 有权
    碳纳米管柱和制备和使用碳纳米管柱作为探针的方法

    公开(公告)号：US20100083489A1

    公开(公告)日：2010-04-08

    申请号：US12632428

    申请日：2009-12-07

    Applicant: Benjamin N. Eldridge ,  Treliant Fang ,  Gaetan L. Mathieu ,  Onnik Yaglioglu

    Inventor： Benjamin N. Eldridge ,  Treliant Fang ,  Gaetan L. Mathieu ,  Onnik Yaglioglu

    IPC: H01R43/00 ,  B05D5/12 ,  C23C14/34 ,  G01R31/02

    CPC classification number: B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  C01B32/16 ,  C01B2202/08 ,  G01R1/06755 ,  G01R3/00 ,  Y10T29/49117

    Abstract: Carbon nanotube columns each comprising carbon nanotubes can be utilized as electrically conductive contact probes. The columns can be grown, and parameters of a process for growing the columns can be varied while the columns grow to vary mechanical characteristics of the columns along the growth length of the columns. Metal can then be deposited inside and/or on the outside of the columns, which can enhance the electrical conductivity of the columns. The metalized columns can be coupled to terminals of a wiring substrate. Contact tips can be formed at or attached to ends of the columns. The wiring substrate can be combined with other electronic components to form an electrical apparatus in which the carbon nanotube columns can function as contact probes.

    Abstract translation: 每个包含碳纳米管的碳纳米管柱可用作导电接触探针。 柱可以生长，并且用于生长柱的方法的参数可以变化，同时柱生长以改变柱沿着生长长度的机械特性。 然后可以将金属沉积在柱的内部和/或外部，这可以增强柱的导电性。 金属化柱可以连接到布线基板的端子。 接触尖端可以形成在柱或端附近。 布线基板可以与其他电子部件组合以形成其中碳纳米管柱可用作接触探针的电气设备。

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