公开(公告)号：US20150255641A1

公开(公告)日：2015-09-10

申请号：US14710149

申请日：2015-05-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： KEITH E. FOGEL ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  DEVENDRA K. SADANA

IPC: H01L31/0236 ,  H01L31/075 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0224

CPC classification number: H01L31/02366 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/1888 ,  Y02E10/50

Abstract: A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

Abstract translation: 一种光电器件和方法包括在衬底中形成多个柱结构，在柱结构上形成第一电极层，并在第一衬底上形成包括N型层，P型层和本征层的连续光伏堆叠 电极。 第二电极层沉积在光伏堆叠上，使得在柱结构之间的第二电极层中出现间隙或裂缝。 湿蚀刻第二电极层以打开间隙或裂缝并且减小第二电极层以在光伏堆叠上形成基本上均匀厚度的三维电极。

公开(公告)号：US20190326463A1

公开(公告)日：2019-10-24

申请号：US16502919

申请日：2019-07-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TZE-CHIANG CHEN ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  DEVENDRA K. SADANA

IPC: H01L31/077 ,  H01L31/0224 ,  H01L31/20 ,  C23C16/02 ,  C23C16/50 ,  H01L31/056 ,  H01L31/18 ,  H01L31/065 ,  H01L31/0368 ,  C23C16/515 ,  C23C16/455 ,  H01L31/0392 ,  H01L31/0376 ,  H01L31/0216 ,  H01L21/02

Abstract: A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

公开(公告)号：US20180258549A1

公开(公告)日：2018-09-13

申请号：US15976224

申请日：2018-05-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： BAHMAN HEKMATSHOAR-TABARI ,  ALI KHAKIFIROOZ ,  ALEXANDER REZNICEK ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: C30B25/04 ,  H01L21/02 ,  H01L21/3065 ,  C30B25/18 ,  C30B29/06 ,  C30B25/14 ,  C30B25/10 ,  C30B33/12

CPC classification number: C30B25/04 ,  C30B25/105 ,  C30B25/14 ,  C30B25/183 ,  C30B25/186 ,  C30B29/06 ,  C30B33/12 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02584 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3065

Abstract: An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.

公开(公告)号：US20180212094A1

公开(公告)日：2018-07-26

申请号：US15927243

申请日：2018-03-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TZE-CHIANG CHEN ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  DAVOOD SHAHRJERDI

IPC: H01L31/20 ,  H01L31/0747 ,  H01L31/0216 ,  H01L31/0224

CPC classification number: H01L31/202 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0747 ,  Y02E10/50

Abstract: A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having an opposite dopant conductivity from that of the substrate. Methods are also disclosed.

公开(公告)号：US20180175225A1

公开(公告)日：2018-06-21

申请号：US15894690

申请日：2018-02-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Bay Zu Precision Co., LTD.

Inventor： SHUN-MING CHEN ,  CHIEN-CHIH HUANG ,  JOEL P. DESOUZA ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  CHIEN-YEH KU ,  DEVENDRA K. SADANA ,  CHUAN-WEN WANG

IPC: H01L31/0224 ,  H01L31/075 ,  H01L31/18 ,  H01L31/0392

CPC classification number: H01L31/022483 ,  H01L31/022425 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.

公开(公告)号：US20170213736A1

公开(公告)日：2017-07-27

申请号：US15483273

申请日：2017-04-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JOEL P. de SOUZA ,  BAHMAN HEKMATSHOARTABARI ,  JEEHWAN KIM ,  SIEGFRIED L. MAURER ,  DEVENDRA K. SADANA

IPC: H01L21/283 ,  H01L29/66 ,  H01L29/40 ,  H01L21/3213 ,  H01L29/08

CPC classification number: H01L21/283 ,  A23C9/123 ,  A23C9/1315 ,  A23C11/08 ,  H01L21/2254 ,  H01L21/28114 ,  H01L21/30604 ,  H01L21/3213 ,  H01L21/32131 ,  H01L21/32133 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/42376 ,  H01L29/66446 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/78

Abstract: A method for forming a semiconductor device includes patterning a gate conductor, formed on a substrate, and a two-dimensional material formed on the gate conductor. Recesses are formed adjacent to the gate conductor in the substrate, and a doped layer is deposited in the recesses and over a top of the two-dimensional material. Tape is adhered to the doped layer on top of the two-dimensional material. The tape is removed to exfoliate the doped layer from the top of the two-dimensional material to form source and drain regions in the recesses.

公开(公告)号：US20160204290A1

公开(公告)日：2016-07-14

申请号：US15077169

申请日：2016-03-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： AUGUSTIN J. HONG ,  MARINUS J. HOPSTAKEN ,  JEEHWAN KIM ,  JOHN A. OTT ,  DEVENDRA K. SADANA

IPC: H01L31/0392 ,  H01L31/18 ,  H01L31/07 ,  H01L31/20

CPC classification number: H01L31/03921 ,  H01L31/03762 ,  H01L31/03767 ,  H01L31/07 ,  H01L31/075 ,  H01L31/1884 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

Abstract: Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.

Abstract translation: 形成光伏器件的方法包括在透明电极和p型层之间形成缓冲层。 缓冲层包括掺杂的无锗硅基材料。 缓冲层具有落在透明电极和p型层的势垒能内的功函数。 在p型层上形成本征层和n型层。 还提供设备。

公开(公告)号：US20160204286A1

公开(公告)日：2016-07-14

申请号：US15077069

申请日：2016-03-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： KEITH E. FOGEL ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  DEVENDRA K. SADANA

IPC: H01L31/0236 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/077

CPC classification number: H01L31/02366 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/1888 ,  Y02E10/50

Abstract: A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

公开(公告)号：US20160072002A1

公开(公告)日：2016-03-10

申请号：US14944741

申请日：2015-11-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： KEITH E. FOGEL ,  JEEHWAN KIM ,  JAE-WOONG NAH ,  DEVENDRA K. SADANA ,  KUEN-TING SHIU

IPC: H01L31/18 ,  H01L31/0236 ,  H01L31/0352

CPC classification number: H01L31/035227 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0352 ,  H01L31/1804 ,  Y02E10/50

Abstract: A photovoltaic device and method include depositing a metal film on a substrate layer. The metal film is annealed to form islands of the metal film on the substrate layer. The substrate layer is etched using the islands as an etch mask to form pillars in the substrate layer.

Abstract translation: 光电器件和方法包括在衬底层上沉积金属膜。 金属膜退火以在基底层上形成金属膜岛。 使用岛作为蚀刻掩模蚀刻衬底层，以在衬底层中形成柱。

公开(公告)号：US20150263199A1

公开(公告)日：2015-09-17

申请号：US14727071

申请日：2015-06-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： OKI GUNAWAN ,  JEEHWAN KIM ,  DAVID B. MITZI ,  DEVENDRA K. SADANA ,  TEODOR K. TODOROV

IPC: H01L31/032 ,  H01L31/20 ,  H01L31/076 ,  C25D7/12 ,  C23C14/34

CPC classification number: H01L31/0326 ,  C23C14/34 ,  C25D7/12 ,  H01L31/076 ,  H01L31/078 ,  H01L31/18 ,  H01L31/20 ,  Y02E10/548

Abstract: A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.

Abstract translation: 感光装置和方法包括具有N型层的顶层单元，P型层和其间的顶层本征层。 底部单元包括N型层，P型层和底层本征层。 底部本征层包括含有Cu-Zn-Sn的硫族化物。