公开(公告)号：US20130147958A1

公开(公告)日：2013-06-13

申请号：US13818353

申请日：2012-05-23

申请人： Shinji Mitsuta ,  Shigeru Harada ,  Tomikazu Tanuki ,  Eishin Masutani ,  Yukihiro Nakanishi ,  Takeshi Kurihara ,  Dai Tsubone ,  Masaomi Machida

发明人： Shinji Mitsuta ,  Shigeru Harada ,  Tomikazu Tanuki ,  Eishin Masutani ,  Yukihiro Nakanishi ,  Takeshi Kurihara ,  Dai Tsubone ,  Masaomi Machida

IPC分类号： H04N7/18

CPC分类号： H04N7/181 ,  B60K35/00 ,  B60K2350/1096 ,  B60P1/04 ,  B60P1/283 ,  B60Q9/008 ,  B60R1/00 ,  B60R2300/105 ,  B60R2300/301 ,  B60R2300/303 ,  B60R2300/607 ,  B60R2300/802 ,  B60R2300/8093 ,  E02F9/261 ,  G08G1/166 ,  H04N5/23293 ,  H04N5/247 ,  H04N7/18

摘要： A perimeter monitoring device for a work vehicle is configured to monitor a surrounding of the work vehicle and display a monitored result on a display device. The perimeter monitoring device includes cameras, a bird's-eye image display unit, obstacle detecting sensors, a camera image specifying unit, and a camera image displaying unit. The camera image specifying unit is configured to specify one or more camera images in which one or more of obstacles are captured when the one or more of obstacles are detected by the obstacle detecting sensors. The camera image displaying unit is configured to display a relevant camera image in alignment with the bird's-eye image on the display device when a plurality of camera images are specified by the camera image specifying unit, the relevant camera image being ranked in a high priority ranking based on a priority order set in accordance with travelling states.

摘要翻译： 用于工作车辆的周边监控装置被配置为监视工作车辆的周围并且将监视的结果显示在显示装置上。 周边监视装置包括摄像机，鸟瞰图像显示单元，障碍物检测传感器，摄像机图像指定单元和照相机图像显示单元。 相机图像指定单元被配置为指定当障碍物检测传感器检测到一个或多个障碍物时捕获一个或多个障碍物的一个或多个相机图像。 相机图像显示单元被配置为当由相机图像指定单元指定多个相机图像时，在显示装置上显示与鸟瞰图像对准的相关相机图像，相关的相机图像被优先排列 基于根据旅行状态设置的优先级顺序排列。

公开(公告)号：US20120062580A1

公开(公告)日：2012-03-15

申请号：US13113436

申请日：2011-05-23

申请人： Toshiyuki Shimada ,  Shigeru Harada ,  Ryuhei Hata

发明人： Toshiyuki Shimada ,  Shigeru Harada ,  Ryuhei Hata

IPC分类号： G09G5/02

CPC分类号： H04N13/133 ,  H04N13/144 ,  H04N13/15 ,  H04N13/341

摘要： A display device includes a first measurement unit measuring information on luminance of a first image signal to output a first measurement result, a second measurement unit measuring information on a luminance of a second image signal to output a second measurement result, a comparator comparing the first measurement result with the second measurement result to output differential data, a correction amount determination unit determining a correction amount for the first image signal and/or the second image signal based on the differential data, and a correction unit correcting the luminance of the first image signal and/or the second image signal based on the correction amount.

摘要翻译： 显示装置包括测量第一图像信号的亮度信息以输出第一测量结果的第一测量单元，测量关于第二图像信号的亮度的信息以输出第二测量结果的第二测量单元，比较第一测量结果的比较器 测量结果与第二测量结果输出差分数据;校正量确定单元，基于差分数据确定第一图像信号和/或第二图像信号的校正量;以及校正单元，校正第一图像的亮度 信号和/或第二图像信号。

公开(公告)号：US20090009665A1

公开(公告)日：2009-01-08

申请号：US12214996

申请日：2008-06-24

申请人： Tomonori Tsutsumi ,  Shigeru Harada

发明人： Tomonori Tsutsumi ,  Shigeru Harada

IPC分类号： H04N5/202

CPC分类号： H04N5/202 ,  H04N9/045

摘要： An image processing apparatus according to an embodiment of the present invention includes a correction interval setting unit for setting a correction interval; a correction interval dividing unit for dividing the correction interval into a black side interval and a white side interval; histogram calculating units for calculating a total number of luminance histograms of the black side interval and the white side interval, respectively; gain setting units for setting gains of a γ curve for raising the luminance and a γ curve for lowering the luminance, respectively; gamma curve generating units for generating a gamma curve for raising the luminance and a gamma curve for lowering the luminance, respectively; a gamma curve combining unit for combining the gamma curve for raising the luminance and the gamma curve for lowering the luminance; and a luminance conversion unit for performing the luminance conversion process using the combined gamma curve.

摘要翻译： 根据本发明的实施例的图像处理装置包括：校正间隔设定单元，用于设定校正间隔; 校正间隔分割单元，用于将校正间隔分成黑色侧间隔和白色侧间隔; 用于计算黑色侧面间隔和白色侧面间隔的亮度直方图的总数的直方图计算单元; 用于设置用于提高亮度的伽马曲线的增益的增益设置单元和用于降低亮度的伽马曲线; 用于产生用于提高亮度的伽马曲线的伽马曲线生成单元和用于降低亮度的伽马曲线; 用于组合用于提高亮度的伽马曲线和用于降低亮度的伽马曲线的伽马曲线组合单元; 以及亮度转换单元，用于使用组合的伽马曲线来执行亮度转换处理。

公开(公告)号：US07283929B2

公开(公告)日：2007-10-16

申请号：US10525754

申请日：2005-09-26

申请人： Kazunari Fujiyama ,  Toshihiro Fujiwara ,  Kazuhiro Saito ,  Taiji Hirasawa ,  Satoshi Nagai ,  Hitoshi Kichise ,  Mitsuyoshi Okazaki ,  Hirotsugu Kodama ,  Masanori Minowa ,  Takayuki Iwahashi ,  Yasunari Akikuni ,  Masao Arimura ,  Kentaro Takagi ,  Seiichi Asatsu ,  Shigeru Harada

发明人： Kazunari Fujiyama ,  Toshihiro Fujiwara ,  Kazuhiro Saito ,  Taiji Hirasawa ,  Satoshi Nagai ,  Hitoshi Kichise ,  Mitsuyoshi Okazaki ,  Hirotsugu Kodama ,  Masanori Minowa ,  Takayuki Iwahashi ,  Yasunari Akikuni ,  Masao Arimura ,  Kentaro Takagi ,  Seiichi Asatsu ,  Shigeru Harada

IPC分类号： G06F9/44

CPC分类号： G05B23/0216 ,  G05B23/0248 ,  G05B23/0278 ,  G05B23/0281 ,  Y02P90/14 ,  Y02P90/26

摘要： An operation-supporting apparatus includes: an operation request input unit that inputs information relating to operation request items of plant equipment; an operating conditions setting unit that converts operation request input information to operating parameters; an operation history creation unit that creates an operation history by chronologically processing the operating parameters; a breakdown statistics database that stores an event tree of the plant equipment; an event simulator that calculates the degree of unreliability corresponding to the operating parameters, the operation request information, and the operation history information, and in compliance with the event tree; a risk-cost calculation unit that calculates risk-cost by determining the aggregate product of the degrees of unreliability and restoration costs; an operating method determination unit that determines whether operating conditions are suitable by comparing the risk-cost with profit gained by continuing operation; and an operating method specification unit that specifies specific operation conditions for the plant equipment.

摘要翻译： 操作支持装置包括：操作请求输入单元，输入与工厂设备的操作请求项有关的信息; 操作条件设置单元，其将操作请求输入信息转换为操作参数; 操作历史创建单元，其通过按时间顺序地处理所述操作参数来创建操作历史; 存储工厂设备的事件树的故障统计数据库; 事件模拟器，其根据所述事件树计算与所述操作参数对应的不可靠程度，所述操作请求信息和所述操作历史信息; 风险成本计算单元，通过确定不可靠程度和恢复成本的总产品来计算风险成本; 操作方法确定单元，其通过将风险成本与通过持续操作获得的利润进行比较来确定操作条件是否合适; 以及指定工厂设备的特定操作条件的操作方法规范单元。

公开(公告)号：US06890857B2

公开(公告)日：2005-05-10

申请号：US10281162

申请日：2002-10-28

申请人： Shigeru Harada ,  Yoshifumi Takata ,  Junko Izumitani

发明人： Shigeru Harada ,  Yoshifumi Takata ,  Junko Izumitani

IPC分类号： H01L23/52 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L24/48 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05073 ,  H01L2224/05093 ,  H01L2224/05124 ,  H01L2224/05647 ,  H01L2224/05669 ,  H01L2224/16 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2224/48647 ,  H01L2224/48669 ,  H01L2224/48747 ,  H01L2224/48769 ,  H01L2224/48799 ,  H01L2224/48847 ,  H01L2224/48869 ,  H01L2224/7865 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00015

摘要： The present invention provides a semiconductor device which can prevent the oxidization of the surfaces of pad electrodes to enhance the connecting strength between the pad electrodes and external terminals. The semiconductor device according to the present invention comprises pad electrodes for use in connecting external electrodes and a multilayer wiring structure connected to the pad electrodes, wherein one surface of an insulating layer covering the pad electrodes and having openings over the pad electrodes for exposing the surfaces of the pad electrodes is in contact with a metal layer formed from one selected from precious metals and alloys containing the precious metals as main components.

摘要翻译： 本发明提供一种能够防止焊盘电极的表面氧化，提高焊盘电极与外部端子之间的连接强度的半导体装置。 根据本发明的半导体器件包括用于连接外部电极的焊盘电极和连接到焊盘电极的多层布线结构，其中绝缘层的一个表面覆盖焊盘电极并且在焊盘电极上方具有用于暴露表面的开口 的焊盘电极与从贵金属和贵金属的合金中选择的一种金属层作为主要成分接触。

公开(公告)号：US06677682B1

公开(公告)日：2004-01-13

申请号：US09620555

申请日：2000-07-20

申请人： Noriaki Fujiki ,  Shigeru Harada ,  Takashi Yamashita

发明人： Noriaki Fujiki ,  Shigeru Harada ,  Takashi Yamashita

IPC分类号： H01L23544

CPC分类号： H01L23/544 ,  H01L21/76819 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interlayer insulating film (21) is formed on a substrate (1), and a polysilicon layer (10) is formed on the interlayer insulating film (21). An interlayer insulating film (22) is formed to cover the polysilicon layer (10), and a polysilicon layer (11) is formed on the interlayer insulating film (22). An interlayer insulating film (23) is formed to cover the interlayer insulating film (22). A hole (20M) for a mark to constitute an alignment mark or the like is formed from a surface (23S) of the interlayer insulating film (23) to the polysilicon layer (11). The hole (20M) for a mark is larger than a contact hole formed from the surface (23S) to the substrate (1) but is shallower than the contact hole. Consequently, a concave portion corresponding to the hole (20M) for a mark is formed, with difficulty, on a silicon oxide layer to be subjected to CMP polishing and then become an interlayer insulting film (4). Therefore, it is possible to prevent a slurry from remaining in the concave portion. Thus, it is possible to obtain a semiconductor device having high reliability without a disadvantage such as a wiring disconnection or the like which is caused by the remaining or scattering of the slurry to be used for a CMP method.

摘要翻译： 在基板（1）上形成层间绝缘膜（21），在层间绝缘膜（21）上形成多晶硅层（10）。 形成层间绝缘膜（22）以覆盖多晶硅层（10），并且在层间绝缘膜（22）上形成多晶硅层（11）。 形成层间绝缘膜（23）以覆盖层间绝缘膜（22）。 从层间绝缘膜（23）到多晶硅层（11）的表面（23S）形成用于构成对准标记等的标记的孔（20M）。 用于标记的孔（20M）大于从表面（23S）到基板（1）形成的接触孔，但是比接触孔浅。 因此，难以在氧化硅层上形成与用于标记的孔（20M）对应的凹部，进行CMP研磨后，成为层间绝缘膜（4）。 因此，可以防止浆料残留在凹部中。 因此，可以获得具有高可靠性的半导体器件，而没有由用于CMP方法的浆料的剩余或散射引起的诸如布线断开等的缺点。

公开(公告)号：US06466255B1

公开(公告)日：2002-10-15

申请号：US09482086

申请日：2000-01-13

申请人： Junji Kagita ,  Shigeru Harada

发明人： Junji Kagita ,  Shigeru Harada

IPC分类号： H04H1300

CPC分类号： G06T7/11 ,  G06T2207/10012 ,  H04N13/15 ,  H04N13/161 ,  H04N13/167 ,  H04N13/189 ,  H04N13/194 ,  H04N13/239 ,  H04N13/257 ,  H04N13/261 ,  H04N13/286 ,  H04N13/296 ,  H04N13/324 ,  H04N13/337 ,  H04N13/363 ,  H04N13/398 ,  H04N19/597 ,  H04N2013/0077 ,  H04N2013/0081 ,  H04N2013/0085 ,  H04N2013/0092 ,  H04N2013/0096

摘要： In a foreground/background discriminating circuit based on focusing, a leading edge of a boundary portion is detected from a video signal and a parallax control signal is outputted on the basis of the detected leading edge. Similarly, in foreground/background discriminating circuits based on color differences and based on a luminance, a chroma component and a luminance component of the video signal are detected and parallax control signals are generated on the basis of the detected chroma and luminance components, respectively. In a multiplier, the parallax control signals generated from the foreground/background discriminating circuits are multiplied. In a parallax limiting circuit, a delay amount control signal for a left video signal and a delay amount control signal for a right video signal are formed in a manner such that a binocular parallax amount lies within a predetermined value and within a range of an amount such that the existence of the parallax is recognized clearly.

摘要翻译： 在基于聚焦的前景/背景鉴别电路中，根据视频信号检测边界部分的前沿，并且基于检测到的前沿输出视差控制信号。 类似地，在基于色差和基于亮度的前景/背景识别电路中，检测视频信号的色度分量和亮度分量，并且基于检测到的色度和亮度分量生成视差控制信号。 在乘法器中，将从前景/背景识别电路产生的视差控制信号相乘。 在视差限制电路中，形成用于左视频信号的延迟量控制信号和用于右视频信号的延迟量控制信号，使得双目视差量位于预定值内并在量的范围内 使得视差的存在被清楚地识别。

公开(公告)号：US5889330A

公开(公告)日：1999-03-30

申请号：US987763

申请日：1997-12-09

申请人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

发明人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

IPC分类号： H01L21/312 ,  H01L21/768 ,  H01L23/532 ,  H01L29/41

CPC分类号： H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76826 ,  H01L23/5329 ,  H01L2924/0002

摘要： In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.

摘要翻译： 在半导体器件及其制造方法中，树脂膜形成具有多层互连结构的半导体器件的中间膜，并且仅使用包含由以下化学式表示的硅树脂聚合物的涂布液形成一个涂层：（HO ）2（R2Si2O3）nH2。 结果，可以提高电特性等的长期可靠性，并且简化工艺。

公开(公告)号：US5712509A

公开(公告)日：1998-01-27

申请号：US873015

申请日：1992-04-24

申请人： Shigeru Harada ,  Kenji Kishibe ,  Akira Ohisa ,  Hiroshi Mochizuki ,  Eisuke Tanaka

发明人： Shigeru Harada ,  Kenji Kishibe ,  Akira Ohisa ,  Hiroshi Mochizuki ,  Eisuke Tanaka

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76801 ,  H01L21/76804 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76837 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10S257/901 ,  Y10S257/904 ,  Y10S257/908 ,  Y10S257/915

摘要： A semiconductor integrated circuit structure includes a semiconductor substrate; an electronic element disposed in the substrate; a first electrically insulating layer disposed on the substrate and the electronic element; a first electrically conducting interconnection layer electrically connected to the electronic element and disposed at least partly on the first electrically insulating layer; a second electrically insulating layer disposed on the first electrically conducting interconnection layer; a second electrically conducting interconnection layer disposed on the second electrically insulating layer; and a through-hole penetrating the second electrically insulating layer to the first electrically conducting interconnection layer, part of the second interconnection layer being disposed within the through-hole and contacting the first electrically conducting interconnection layer wherein the first electrically conducting interconnection layer includes a current barrier including at least one opening in the first electrically conducting interconnection layer proximate the through-hole extending to the first electrically insulating layer and filled with part of the second electrically insulating layer, constraining current flowing between the first and second electrically conducting interconnection layers to flow around the current barrier.

摘要翻译： 半导体集成电路结构包括半导体衬底; 设置在所述基板中的电子元件; 设置在所述基板和所述电子元件上的第一电绝缘层; 电连接到所述电子元件并且至少部分地设置在所述第一电绝缘层上的第一导电互连层; 设置在所述第一导电互连层上的第二电绝缘层; 设置在所述第二电绝缘层上的第二导电互连层; 以及穿过所述第二电绝缘层到所述第一导电互连层的通孔，所述第二互连层的一部分设置在所述通孔内并与所述第一导电互连层接触，其中所述第一导电互连层包括电流 阻挡层，包括靠近通孔延伸到第一电绝缘层的第一导电互连层中的至少一个开口，并填充有第二电绝缘层的一部分，约束在第一和第二导电互连层之间流动的电流流动 围绕当前的障碍。

公开(公告)号：US5525546A

公开(公告)日：1996-06-11

申请号：US416130

申请日：1995-04-03

申请人： Shigeru Harada ,  Takemi Endoh ,  Tomohiro Ishida

发明人： Shigeru Harada ,  Takemi Endoh ,  Tomohiro Ishida

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/532

CPC分类号： H01L24/05 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/5329 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02126 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/85205 ,  H01L24/45 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041

摘要： A semiconductor device has a conductive interconnection layer formed on a semiconductor substrate covered with a protection insulation film. A pad electrode opening is provided in the protection insulation film so that the surface of the conductive interconnection layer is exposed in the region which becomes the pad electrode. The conductive interconnection layer is electrically connected to an external terminal by a bonding wire. At least the surface of the protection insulation film in the proximity of the pad electrode opening and the inner peripheral side face of the pad electrode opening are covered with an elastic insulation film. The pad electrode opening is covered with the bonding wire. Since the conductive interconnection layer is not exposed at the pad electrode opening according to this structure, the phenomenon of moisture intruding into the pad electrode opening to corrode the conductive interconnection layer is prevented to improve reliability. The semiconductor device of this structure is formed by covering the inner surface and its proximity of the pad electrode opening with an elastic insulation film, forming an opening in the elastic insulation film at the bottom of the pad electrode opening, and connecting the pad electrode to an external terminal by wire bonding.

摘要翻译： 半导体器件具有形成在覆盖有保护绝缘膜的半导体衬底上的导电互连层。 在保护绝缘膜中设置焊盘电极开口，使得导电互连层的表面在成为焊盘电极的区域中露出。 导电互连层通过接合线电连接到外部端子。 至少在焊垫电极开口附近的保护绝缘膜的表面和焊盘电极开口的内周侧表面被弹性绝缘膜覆盖。 焊盘电极开口用接合线覆盖。 由于根据这种结构，在焊盘电极开口处没有露出导电互连层，所以防止了侵入焊盘电极开口以侵蚀导电互连层的水分现象，从而提高了可靠性。 该结构的半导体器件通过用弹性绝缘膜覆盖焊盘电极开口的内表面及其接近而形成，在焊盘电极开口的底部的弹性绝缘膜上形成开口，并将焊盘电极连接到 外部端子通过引线接合。