公开(公告)号：US12237201B2

公开(公告)日：2025-02-25

申请号：US18610138

申请日：2024-03-19

Applicant: Lam Research Corporation

Inventor： Alexander Matyushkin ,  Keith Comendant ,  John Patrick Holland

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67

Abstract: An electrostatic chuck for a substrate processing system is provided and includes a baseplate, an intermediate layer disposed on the baseplate, and a top plate. The top plate is bonded to the baseplate via the intermediate layer and is configured to electrostatically clamp to a substrate. The top plate includes a monopolar clamping electrode and seals. The monopolar clamping electrode includes a groove opening pattern with coolant gas groove opening sets. The seals separate coolant gas zones. The coolant gas zones include four or more coolant gas zones. Each of the coolant gas zones includes distinct coolant gas groove sets. The top plate includes the distinct coolant gas groove sets. Each of the distinct coolant gas groove sets has one or more coolant gas supply holes and corresponds to a respective one of the coolant gas groove opening sets.

公开(公告)号：US10770363B2

公开(公告)日：2020-09-08

申请号：US16056967

申请日：2018-08-07

Applicant: Lam Research Corporation

Inventor： Keith William Gaff ,  Tom Anderson ,  Keith Comendant ,  Ralph Jan-Pin Lu ,  Paul Robertson ,  Eric A. Pape ,  Neil Benjamin

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/683

Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.

公开(公告)号：US10236193B2

公开(公告)日：2019-03-19

申请号：US15497992

申请日：2017-04-26

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H05B1/02 ,  H01L21/67 ,  H01L21/683 ,  H01J37/32 ,  C23C4/10 ,  C23C4/134 ,  C23C14/50 ,  C23C14/54 ,  C23C14/34 ,  C23C14/10 ,  C23C16/40 ,  C23C16/458 ,  C23C16/46 ,  C23C16/509

Abstract: A substrate support is provided, is configured to support a substrate in a plasma processing chamber, and includes first, second and third insulative layers, conduits and leads. The first insulative layer includes heater zones arranged in rows and columns. The second insulative layer includes conductive vias. First ends of the conductive vias are connected respectively to the heater zones. Second ends of the conductive vias are connected respectively to power supply lines. The third insulative layer includes power return lines. The conduits extend through the second insulative layer and into the third insulative layer. The leads extend through the conduits and connect to the heater zones. The heater zones are connected to the power return lines by the leads and are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber.

公开(公告)号：US20160111314A1

公开(公告)日：2016-04-21

申请号：US14517095

申请日：2014-10-17

Applicant: Lam Research Corporation

Inventor： Christopher Kimball ,  Keith Gaff ,  Alexander Matyushkin ,  Zhigang Chen ,  Keith Comendant

IPC: H01L21/683 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/285 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32724

Abstract: A substrate processing apparatus for processing substrates comprises a processing chamber in which a substrate is processed. A process gas source is adapted to supply process gas into the processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the processing chamber. A vacuum source is adapted to exhaust byproducts of the processing from the processing chamber. The processing chamber includes an electrostatic chuck assembly having a layer of ceramic material that includes an upper electrostatic clamping electrode and at least one RF electrode, a temperature controlled RF powered baseplate, and at least one annular electrically conductive gasket extending along an outer portion of an upper surface of the temperature controlled RF powered baseplate. The at least one annular electrically conductive gasket electrically couples the upper surface of the temperature controlled RF powered baseplate to the at least one RF electrode.

Abstract translation: 用于处理基板的基板处理装置包括处理基板的处理室。 处理气体源适于将处理气体供应到处理室中。 RF能量源适于将处理气体激励成处理室中的等离子体状态。 真空源适于从处理室排出处理的副产物。 处理室包括具有陶瓷材料层的静电卡盘组件，该层包括上部静电夹持电极和至少一个RF电极，温度控制的RF功率基板，以及至少一个环形导电垫片，其沿着 温控RF射频基板的上表面。 所述至少一个环形导电衬垫将所述受温度控制的RF供电底板的上表面电耦合到所述至少一个RF电极。

公开(公告)号：US20140332161A1

公开(公告)日：2014-11-13

申请号：US14340083

申请日：2014-07-24

Applicant: Lam Research Corporation

Inventor： Anthony J. Ricci ,  Keith Comendant ,  James Tappan

IPC: H01L21/683 ,  H01J37/32 ,  H05B3/26

CPC classification number: H01L21/6833 ,  H01J37/32724 ,  H01J2237/20 ,  H01L21/67103 ,  H01L21/6831 ,  H01L2221/683 ,  H05B3/26 ,  Y10T29/49146 ,  Y10T29/53252 ,  Y10T279/23

Abstract: An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus.

Abstract translation: 用于控制基板的温度的装置具有温度控制的基座，加热器，金属板，电介质材料层。 加热器在与金属板电绝缘的同时热耦合到金属板的下侧。 第一层粘合剂材料将金属板和加热器粘合到温度受控底座的顶部表面。 该粘合剂层具有机械柔性，并具有设计用于平衡加热器的热能和外部工艺的物理性能，以在设备的表面上提供期望的温度图案。 第二层粘合剂材料将介电材料层粘合到金属板的顶表面上。 该第二粘合剂层具有设计成将期望的温度图案转移到设备的表面的物理性质。

公开(公告)号：US20130241581A1

公开(公告)日：2013-09-19

申请号：US13867961

申请日：2013-04-22

Applicant: LAM RESEARCH CORPORATION

Inventor： Jaehyun Kim ,  Arthur H. Sato ,  Keith Comendant ,  Qing Liu ,  Feiyang Wu

IPC: G01N27/04

CPC classification number: G01N27/04 ,  G01R27/2623 ,  Y10T29/49117

Abstract: A plate of substantially uniform thickness is formed from an electrically conductive material. The plate has a top surface defined to support a part to be measured. The plate has a bottom surface defined to be connected to a radiofrequency (RF) transmission rod such that RF power can be transmitted through the RF transmission rod to the plate. The plate is defined to have a number of holes cut vertically through the plate at a corresponding number of locations that underlie embedded conductive material items in the part to be measured when the part is positioned on the top surface of the plate.

公开(公告)号：US10720346B2

公开(公告)日：2020-07-21

申请号：US15183260

申请日：2016-06-15

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H01L21/67 ,  C23C14/54 ,  C23C16/458 ,  H01L21/683 ,  H01L21/3065 ,  H05B1/02 ,  H05B3/26 ,  H05B3/00 ,  C23C14/50 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32 ,  C23C4/134 ,  C23C4/10 ,  C23C14/10 ,  C23C14/34 ,  C23C16/40 ,  H01L21/02 ,  H01L21/285 ,  H01L21/311 ,  H01L21/3213

Abstract: A substrate support in a semiconductor plasma processing apparatus, comprises multiple independently controllable thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the thermal zones. A substrate support in which the substrate support is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the substrate support include bonding together ceramic or polymer sheets having thermal zones, power supply lines, power return lines and vias.

公开(公告)号：US10049948B2

公开(公告)日：2018-08-14

申请号：US13690745

申请日：2012-11-30

Applicant: Lam Research Corporation

Inventor： Keith William Gaff ,  Tom Anderson ,  Keith Comendant ,  Ralph Jan-Pin Lu ,  Paul Robertson ,  Eric A. Pape ,  Neil Benjamin

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/683

Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.

公开(公告)号：US20140187049A1

公开(公告)日：2014-07-03

申请号：US14198211

申请日：2014-03-05

Applicant: Lam Research Corporation

Inventor： Jason Augustino ,  Anthony de la Llera ,  Allan K. Ronne ,  Jaehyun Kim ,  Rajinder Dhindsa ,  Yen-Kun Wang ,  Saurabh J. Ullal ,  Anthony J. Norell ,  Keith Comendant ,  William M. Denty, JR.

IPC: H01L21/67

CPC classification number: H01L21/67069 ,  C23C16/45565 ,  C23C16/45582 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01L21/67017

Abstract: A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.

Abstract translation: 提供了一种用于等离子体处理装置的喷头电极组件。 喷头电极组件包括附接到第二构件的第一构件。 第一和第二构件具有流体连通的第一和第二气体通道。 当处理气体流过气体通道时，跨越第一和第二气体通道产生总压降。 跨越第二气体通道的总压降的一小部分大于跨越第一气体通道的总压降的一部分。

公开(公告)号：US20140045337A1

公开(公告)日：2014-02-13

申请号：US14056604

申请日：2013-10-17

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H05B1/02 ,  H01L21/3065 ,  H05B3/26

CPC classification number: H01L21/67103 ,  C23C14/50 ,  C23C14/541 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32724 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01J2237/3342 ,  H01J2237/3343 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H05B1/0233 ,  H05B3/00 ,  H05B3/26 ,  Y10T29/49083 ,  Y10T29/49099

Abstract: An exemplary method is directed to powering heaters in a substrate support assembly on which a semiconductor substrate is supported. The support assembly has an array of heaters powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to a power supply and at least two of the heaters and each power return line is connected to at least two of the heaters, and a switching device which independently connects each one of the heaters to one of the power supply lines and one of the power return lines so as to provide time-averaged power to each of the heaters by time divisional multiplexing of switches of the switching device. The method includes supplying power to each of the heaters sequentially using a time-domain multiplexing scheme.

Abstract translation: 一种示例性的方法是针对支撑半导体衬底的衬底支撑组件中的加热器供电。 支撑组件具有由两个或更多个电源线和两个或更多个电力返回线供电的加热器阵列，其中每个电源线连接到电源，并且至少两个加热器和每个电力回路线连接到 至少两个加热器，以及开关装置，其将每个加热器独立地连接到电源线中的一个和功率返回线之一，以便通过时分复用提供每个加热器的时间平均功率 开关器件的开关。 该方法包括使用时域复用方案依次提供给每个加热器的功率。