公开(公告)号：US20140061687A1

公开(公告)日：2014-03-06

申请号：US14071106

申请日：2013-11-04

Applicant: LuxVue Technology Corporation

Inventor： Hsin-Hua Hu ,  Andreas Bibl ,  John A. Higginson ,  Hung-Fai Stephen Law

IPC: H01L33/08

CPC classification number: H01L33/08 ,  H01L21/67144 ,  H01L24/75 ,  H01L24/83 ,  H01L24/95 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/405 ,  H01L2224/7598 ,  H01L2224/83 ,  H01L2224/95145 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.

Abstract translation: 描述了将微器件和微器件阵列制造和传送到接收衬底的方法。 在一个实施例中，在蚀刻p-n二极管层以形成多个微p-n二极管期间，电绝缘层被用作蚀刻停止层。 在一个实施例中，在将微器件形成和传送到接收衬底期间，使用导电中间接合层。

公开(公告)号：US20140048909A1

公开(公告)日：2014-02-20

申请号：US14063963

申请日：2013-10-25

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H01L29/06

CPC classification number: H01L21/6833 ,  B32B38/18 ,  B81C99/002 ,  H01L21/266 ,  H01L21/3083 ,  H01L21/76264 ,  H01L24/75 ,  H01L29/06 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66143 ,  H01L29/66348 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725 ,  H01L2224/7598 ,  H01L2924/1461 ,  H02N13/00 ,  Y10T156/17

Abstract: A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.

Abstract translation: 描述了一种兼容的双极微器件传输头阵列和从SOI衬底形成兼容的双极微器件传输阵列的方法。 在一个实施例中，柔性双极微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括第一和第二硅互连以及与第一和第二硅互连电连接并可偏转到基底基板和硅电极之间的一个或多个空腔中的第一和第二硅电极阵列。

公开(公告)号：US09741592B2

公开(公告)日：2017-08-22

申请号：US14466497

申请日：2014-08-22

Applicant: LuxVue Technology Corporation

Inventor： Hsin-Hua Hu ,  Andreas Bibl ,  John A. Higginson

IPC: H01L27/15 ,  H01L33/00 ,  H01L21/52 ,  H01L21/683 ,  H01L23/00 ,  H01L25/075 ,  H01L25/00

CPC classification number: H01L21/52 ,  H01L21/6835 ,  H01L21/6836 ,  H01L24/83 ,  H01L24/93 ,  H01L24/95 ,  H01L25/0753 ,  H01L25/50 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/40 ,  H01L2221/6835 ,  H01L2224/95136 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. The array of micro devices is formed on an array of stabilization posts formed from a thermoset material. Each micro device includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.

公开(公告)号：US09620487B2

公开(公告)日：2017-04-11

申请号：US14864570

申请日：2015-09-24

Applicant: LuxVue Technology Corporation

Inventor： Kapil V. Sakariya ,  Andreas Bibl ,  Hsin-Hua Hu

IPC: H01L25/07 ,  H01L25/075 ,  H01L33/60 ,  H01L25/16 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L25/167 ,  H01L33/06 ,  H01L33/36 ,  H01L33/44 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/83 ,  H01L2224/92244 ,  H01L2224/95 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.

公开(公告)号：US09589944B2

公开(公告)日：2017-03-07

申请号：US15008372

申请日：2016-01-27

Applicant: LuxVue Technology Corporation

Inventor： John A. Higginson ,  Andreas Bibl ,  Hsin-Hua Hu

IPC: H01L29/06 ,  H01L25/16 ,  H01L33/44 ,  H01L23/31 ,  H01L33/06 ,  H01L33/00 ,  H01L33/42 ,  H01L33/62 ,  H01L25/075 ,  H01L27/12 ,  H01L21/56

CPC classification number: H01L25/167 ,  H01L21/56 ,  H01L23/3171 ,  H01L25/0753 ,  H01L25/50 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1262 ,  H01L33/005 ,  H01L33/06 ,  H01L33/42 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material.

Abstract translation: 公开了一种用于在接收基板上接收微型装置的方法和结构。 诸如微型LED器件的微器件通过覆盖接收衬底上的导电层的钝化层穿孔，并且钝化层硬化。 在一个实施例中，微型LED器件通过B阶热固性材料穿孔。 在一个实施例中，微型LED器件穿过热塑性材料。

公开(公告)号：US09463613B2

公开(公告)日：2016-10-11

申请号：US14307321

申请日：2014-06-17

Applicant: LuxVue Technology Corporation

Inventor： Andreas Bibl ,  John A. Higginson ,  Hung-Fai Stephen Law ,  Hsin-Hua Hu

IPC: B29C65/50 ,  B32B43/00 ,  B32B38/18 ,  B32B37/00 ,  B30B5/00 ,  B30B15/34 ,  H01L23/00 ,  H01L21/67

CPC classification number: H01L29/167 ,  B32B38/18 ,  H01L21/67144 ,  H01L24/75 ,  H01L24/83 ,  H01L24/95 ,  H01L24/97 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/83005 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2933/0066 ,  Y10T156/1153 ,  Y10T156/17 ,  Y10T156/1705 ,  Y10T156/1707 ,  Y10T156/1744 ,  Y10T156/1749 ,  Y10T156/1776 ,  Y10T156/1911 ,  H01L2224/83 ,  H01L2924/00

Abstract: A method of transferring a micro device and an array of micro devices are disclosed. A carrier substrate carrying a micro device connected to a bonding layer is heated to a temperature below a liquidus temperature of the bonding layer, and a transfer head is heated to a temperature above the liquidus temperature of the bonding layer. Upon contacting the micro device with the transfer head, the heat from the transfer head transfers into the bonding layer to at least partially melt the bonding layer. A voltage applied to the transfer head creates a grip force which picks up the micro device from the carrier substrate.

公开(公告)号：US09406541B2

公开(公告)日：2016-08-02

申请号：US14957331

申请日：2015-12-02

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H01L29/76 ,  H01L21/683 ,  H02N13/00

CPC classification number: H01L21/6833 ,  B32B38/18 ,  B81C99/002 ,  H01L21/266 ,  H01L21/3083 ,  H01L21/76264 ,  H01L24/75 ,  H01L29/06 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66143 ,  H01L29/66348 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725 ,  H01L2224/7598 ,  H01L2924/1461 ,  H02N13/00 ,  Y10T156/17

Abstract: A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.

公开(公告)号：US20160196998A1

公开(公告)日：2016-07-07

申请号：US15052767

申请日：2016-02-24

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H01L21/683

CPC classification number: H01L21/6833 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L2221/68368 ,  H01L2924/00 ,  H01L2924/0002 ,  H05K1/0284 ,  H05K1/03 ,  H05K1/09 ,  H05K1/115 ,  H05K2201/09036

Abstract: A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.

公开(公告)号：US09379092B2

公开(公告)日：2016-06-28

申请号：US14931680

申请日：2015-11-03

Applicant: LuxVue Technology Corporation

Inventor： Hsin-Hua Hu ,  Kevin K. C. Chang ,  Andreas Bibl

IPC: H01L29/06 ,  H01L25/075 ,  H01L33/62 ,  H01L33/60

CPC classification number: H01L33/62 ,  H01L24/75 ,  H01L24/83 ,  H01L24/95 ,  H01L25/0753 ,  H01L27/15 ,  H01L27/156 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/04 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01L33/60 ,  H01L2224/83005 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. A stabilization layer includes an array of stabilization cavities and array of stabilization posts. Each stabilization cavity includes sidewalls surrounding a stabilization post. The array of micro devices is on the array of stabilization posts. Each micro device in the array of micro devices includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.

公开(公告)号：US20160176045A1

公开(公告)日：2016-06-23

申请号：US15054977

申请日：2016-02-26

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  John A. Higginson ,  Andreas Bibl ,  Paul Argus Parks ,  Stephen Paul Bathurst

IPC: B25J9/10 ,  B25J15/00 ,  H01L23/00 ,  H01L21/677 ,  H01L21/68 ,  B25J7/00 ,  H01L21/683

CPC classification number: B25J9/1015 ,  B25J7/00 ,  B25J9/0015 ,  B25J15/0052 ,  B25J15/0085 ,  B25J17/0208 ,  H01L21/67144 ,  H01L21/67721 ,  H01L21/68 ,  H01L21/6833 ,  H01L24/75 ,  H01L24/95 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75282 ,  H01L2224/7565 ,  H01L2224/75723 ,  H01L2224/75725 ,  H01L2224/75823 ,  H01L2224/759 ,  H01L2224/75901 ,  H01L2224/7592 ,  H01L2224/7598 ,  H01L2224/75984 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00

Abstract: Systems and methods for transferring a micro device from a carrier substrate are disclosed. In an embodiment, a mass transfer tool manipulator assembly allows active alignment between an array of electrostatic transfer heads on a micro pick up array and an array of micro devices on a carrier substrate. Displacement of a compliant element of the mass transfer tool manipulator assembly may be sensed to control alignment between the array of electrostatic transfer heads and the array of micro devices.

Abstract translation: 公开了用于从载体衬底传送微器件的系统和方法。 在一个实施例中，质量传递工具操纵器组件允许在微拾取阵列上的静电转印头阵列和载体衬底上的微器件阵列之间的主动对准。 可以检测质量传递工具操纵器组件的柔性元件的位移，以控制静电转印头阵列与微器件阵列之间的对准。