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公开(公告)号：US20180358344A1
公开(公告)日：2018-12-13
申请号：US16046686
申请日：2018-07-26
Applicant: Micron Technology, Inc.
Inventor： Cem Basceri , Casey Kurth , Kevin Tetz
CPC classification number: H01L25/50 , H01L25/0756 , H01L33/382 , H01L33/486 , H01L33/501 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0041 , H05K1/0203 , H05K1/0306 , H05K2201/10106 , H01L2924/00
Abstract: Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.
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公开(公告)号：US10062677B2
公开(公告)日：2018-08-28
申请号：US15252156
申请日：2016-08-30
Applicant: Micron Technology, Inc.
Inventor： Cem Basceri , Casey Kurth , Kevin Tetz
CPC classification number: H01L25/50 , H01L25/0756 , H01L33/382 , H01L33/486 , H01L33/501 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0041 , H05K1/0203 , H05K1/0306 , H05K2201/10106 , H01L2924/00
Abstract: Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.
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公开(公告)号：US20160372451A1
公开(公告)日：2016-12-22
申请号：US15252156
申请日：2016-08-30
Applicant: Micron Technology, Inc.
Inventor： Cem Basceri , Casey Kurth , Kevin Tetz
CPC classification number: H01L25/50 , H01L25/0756 , H01L33/382 , H01L33/486 , H01L33/501 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0041 , H05K1/0203 , H05K1/0306 , H05K2201/10106 , H01L2924/00
Abstract: Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.
Abstract translation: 本文公开了包括背对背固态发射器（SSEs）和相关方法的固态光（SSL）。 在各种实施例中，SSL可以包括具有不同于第一表面的第一表面和第二表面的载体衬底。 第一和第二通过衬底互连（TSI）可以从载体衬底的第一表面延伸到第二表面。 SSL还可以包括第一和第二SSE，每个SSE具有与前侧相对的前侧和后侧。 第一SSE的背面面向载体基板的第一表面，并且第一SSE电耦合到第一和第二TSI。 第二SSE的背面面向载体基板的第二表面，而第二SSE电耦合到第一和第二TSI。
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24.发明申请公开(公告)号：US20160225948A1
公开(公告)日：2016-08-04
申请号：US15005794
申请日：2016-01-25
Applicant: Micron Technology, Inc.
Inventor： Cem Basceri , Thomas Gehrke
CPC classification number: H01L33/12 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02521 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02647 , H01L22/22 , H01L33/007 , H01L33/025 , H01L33/16 , H01L33/20 , H01L33/32
Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.
Abstract translation: 本文公开了固态照明装置和相关的制造方法。 在一个实施例中，固态照明装置包括在衬底材料的衬底表面上具有衬底表面和多个半球形晶粒硅（“HSG”）结构的衬底材料。 固态照明装置还包括在衬底材料上的半导体材料，其至少一部分在多个HSG结构之间。
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25.发明申请公开(公告)号：US20160027957A1
公开(公告)日：2016-01-28
申请号：US14874231
申请日：2015-10-02
Applicant: Micron Technology, Inc.
Inventor： Cem Basceri , Thomas Gehrke , Charles M. Watkins
CPC classification number: H01L33/0075 , H01L33/005 , H01L33/06 , H01L33/08 , H01L33/38 , H01L33/502 , H01L33/508 , H01L2933/0033 , H01L2933/0041
Abstract: Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.
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Patent Agency Ranking
26.发明申请公开(公告)号：US20150004729A1
公开(公告)日：2015-01-01
申请号：US14489344
申请日：2014-09-17
Applicant: Micron Technology, Inc.
Inventor： Cem Basceri , Thomas Gehrke , Charles M. Watkins
CPC classification number: H01L33/0075 , H01L33/005 , H01L33/06 , H01L33/08 , H01L33/38 , H01L33/502 , H01L33/508 , H01L2933/0033 , H01L2933/0041
Abstract: Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.
Abstract translation: 本文描述了具有内置色度转换和相关制造方法的发光器件的各种实施例。 在一个实施例中，制造发光器件的方法包括依次在衬底材料上形成第一半导体材料，有源区和第二半导体材料，所述有源区被配置为产生第一发射。 然后在第二半导体材料上形成转换材料。 转换材料具有晶体结构并且被配置为产生第二发射。 该方法还包括调整转换材料的特性，使得第一和第二发射的组合具有至少近似于发光器件的目标色度的色度。
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27.发明申请SEMICONDUCTOR DEVICES HAVING COMPACT FOOTPRINTS AND RELATED DEVICES, SYSTEMS, AND METHODS 有权具有紧凑型功能的半导体器件及相关器件，系统和方法公开(公告)号：US20140361382A1
公开(公告)日：2014-12-11
申请号：US13913968
申请日：2013-06-10
Applicant: Micron Technology, Inc.
Inventor： Martin F. Schubert , Vladimir Odnoblyudov , Cem Basceri
IPC: H01L23/522 , H01L21/768
CPC classification number: H01L21/76898 , H01L21/6835 , H01L21/6836 , H01L23/481 , H01L23/4824 , H01L23/522 , H01L29/78 , H01L2221/68327 , H01L2221/6834 , H01L2224/24 , H01L2224/24137 , H01L2224/82 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
Abstract: Semiconductor devices and methods for making semiconductor devices are disclosed herein. A semiconductor device configured in accordance with a particular embodiment includes a substrate having a source/drain region, an interconnect, and first and second electrodes extending between first and second sides of the substrate. The first electrode includes a first contact pad and a via extending through the substrate that connects the first contact pad with the interconnect. The second electrode includes a second contact pad and a conductive feature in the substrate that connects the second contact pad with the interconnect.
Abstract translation: 本文公开了用于制造半导体器件的半导体器件和方法。 根据特定实施例配置的半导体器件包括具有源极/漏极区域，互连以及在衬底的第一和第二侧面之间延伸的第一和第二电极的衬底。 第一电极包括第一接触焊盘和延伸穿过基板的通孔，其将第一接触焊盘与互连件连接。 第二电极包括第二接触焊盘和衬底中的导电特征，其将第二接触焊盘与互连连接。
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28.发明申请公开(公告)号：US20140246683A1
公开(公告)日：2014-09-04
申请号：US14276163
申请日：2014-05-13
Applicant: Micron Technology, Inc.
Inventor： Cem Basceri , Thomas Gehrke
CPC classification number: H01L33/12 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02521 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02647 , H01L22/22 , H01L33/007 , H01L33/025 , H01L33/16 , H01L33/20 , H01L33/32
Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.
Abstract translation: 本文公开了固态照明装置和相关的制造方法。 在一个实施例中，固态照明装置包括在衬底材料的衬底表面上具有衬底表面和多个半球形晶粒硅（“HSG”）结构的衬底材料。 固态照明装置还包括在衬底材料上的半导体材料，其至少一部分在多个HSG结构之间。
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公开(公告)号：US08691015B2
公开(公告)日：2014-04-08
申请号：US13858644
申请日：2013-04-08
Applicant: Micron Technology, Inc.
Inventor： Garo J. Derderian , Cem Basceri , Donald L. Westmoreland
CPC classification number: H01L29/06 , B01J20/3483 , B01J38/02 , C23C16/08 , C23C16/34 , C23C16/4404 , C23C16/4412 , H01L21/324 , H01L23/58 , H01L2924/0002 , Y10T428/31678 , H01L2924/00
Abstract: A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.
Abstract translation: 提出了一种减少沉积的钛基薄膜内基于卤化物的污染的方法和装置。 在沉积工艺期间，在沉积室内利用卤化物吸附材料以除去卤化物，例如氯和氯化物，以使钛基膜的污染最小化。 还提供了一种再生卤化物吸附材料的方法。
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公开(公告)号：US20230352470A1
公开(公告)日：2023-11-02
申请号：US18340602
申请日：2023-06-23
Applicant: Micron Technology, Inc.
Inventor： Cem Basceri , Casey Kurth , Kevin Tetz
CPC classification number: H01L25/50 , H01L33/382 , H01L25/0756 , H01L33/486 , H01L33/501 , H01L33/62 , H01L2924/0002 , H05K1/0203
Abstract: Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.
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