公开(公告)号：US20030020089A1

公开(公告)日：2003-01-30

申请号：US09911507

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Overgaard

IPC: H01L031/111

CPC classification number: H01L22/26 ,  C30B23/002 ,  C30B23/02 ,  H01L21/02197 ,  H01L21/02356 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/8221 ,  H01L21/8258 ,  H01L2924/00011 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrate for monocrystalline growth of additional layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22) spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24).

公开(公告)号：US20020167005A1

公开(公告)日：2002-11-14

申请号：US09853744

申请日：2001-05-11

Applicant: Motorola, Inc

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Overgaard

IPC: H01L029/12 ,  H01L021/84 ,  H01L031/0392

CPC classification number: C30B25/18 ,  C30B23/02 ,  C30B25/02 ,  C30B29/32 ,  H01L28/56

Abstract: The present invention provides semiconductor structures and methods for forming semiconductor structures which include monocrystalline oxide films exhibiting both high dielectric constants and low leakage current densities. In accordance with various aspects of the invention, a semiconductor structure includes a monocrystalline semiconductor substrate and one or more stoichiometrically graduated monocrystalline oxide layers. The stoichiometrically graduated monocrystalline oxide layer may include a perovskite material, such as an alkaline-earth metal titanate. Semiconductor devices fabricated in accordance with aspects of the present invention exhibit a high dielectric constant as well as a reduced leakage current density.

Abstract translation: 本发明提供用于形成半导体结构的半导体结构和方法，其包括表现出高介电常数和低漏电流密度的单晶氧化物膜。 根据本发明的各个方面，半导体结构包括单晶半导体衬底和一个或多个化学计量分级的单晶氧化物层。 化学计量分级的单晶氧化物层可以包括钙钛矿材料，例如碱土金属钛酸盐。 根据本发明的方面制造的半导体器件具有高介电常数以及降低的漏电流密度。

公开(公告)号：US20020140012A1

公开(公告)日：2002-10-03

申请号：US09822499

申请日：2001-03-30

Applicant: Motorola, Inc.

Inventor： Ravindranath Droopad

IPC: H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/113 ,  H01L031/119

CPC classification number: H01L31/1852 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02521 ,  H01L31/1836 ,  H01L33/0066 ,  Y02E10/544 ,  Y02P70/521

Abstract: High-quality epitaxial layers of narrow-bandgap monocrystalline semiconductor materials can be grown overlying monocrystalline substrates (22), such as large silicon wafers, by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing a monocrystalline oxide layer (24) on a silicon wafer. The oxide layer may be spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer (28) dissipates strain and permits the growth of a high-quality monocrystalline oxide layer. The oxide layer (24) is lattice-matched to both the underlying silicon wafer and the overlying monocrystalline semiconductor material layer (26). Any lattice mismatch between the oxide layer (24) and the underlying silicon substrate (22) is relieved by the amorphous interface layer (28). Optical structures, such as far-infrared detectors and emitters, can be grown on high-quality, epitaxial, narrow-bandgap compound semiconductor materials to create highly reliable devices at reduced costs.

Abstract translation: 通过形成用于生长单晶层的顺应性衬底，可以将窄带隙单晶半导体材料的高质量外延层生长成覆盖在单晶衬底（22）上，例如大的硅晶片。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长单晶氧化物层（24）。 氧化物层可以通过氧化硅的非晶界面层（28）与硅晶片间隔开。 非晶界面层（28）耗散应变并允许高质量单晶氧化物层的生长。 氧化物层（24）与下面的硅晶片和上覆单晶半导体材料层（26）晶格匹配。 氧化物层（24）和下面的硅衬底（22）之间的任何晶格失配被非晶界面层（28）释放。 光学结构，例如远红外线检测器和发射器，可以在高品质，外延，窄带隙化合物半导体材料上生长，以降低成本创建高可靠性的器件。

公开(公告)号：US20010023660A1

公开(公告)日：2001-09-27

申请号：US09871958

申请日：2001-06-04

Applicant: MOTOROLA, INC.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Daniel Overgaard ,  Jamal Ramdani ,  Jay A. Curless ,  Jerald A. Hallmark ,  William J. Ooms ,  Jun Wang

IPC: C30B025/00 ,  C30B023/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  C30B29/30

Abstract: A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.

公开(公告)号：US20040232525A1

公开(公告)日：2004-11-25

申请号：US10878225

申请日：2004-06-29

Applicant: MOTOROLA, INC.

Inventor： Jamal Ramdani ,  Ravindranath Droopad ,  Lyndee L. Hilt ,  Kurt William Eisenbeiser

IPC: H01L021/331

CPC classification number: H01S5/0261 ,  C30B25/18 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/31691 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L33/16 ,  H01L33/30 ,  H01L2924/0002 ,  H01S5/021 ,  H01L2924/00

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Abstract translation: 通过首先在硅晶片上生长容纳缓冲层，可以将复合半导体材料的高质量外延层生长在大的硅晶片上。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶化合物半导体层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。

公开(公告)号：US20030020114A1

公开(公告)日：2003-01-30

申请号：US09911455

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Kurt W. Eisenbeiser ,  Jeffrey M. Finder

IPC: H01L027/108

CPC classification number: H01L21/02197 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/8258 ,  H01L27/0605 ,  H01L49/003

Abstract: High-density metal-insulator transition field effect transistors are grown on an advanced substrate using buried channel or surface channel designs. With respect to the advanced substrate, high quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract translation: 高密度金属 - 绝缘体转换场效应晶体管使用埋入沟道或表面沟道设计在先进的衬底上生长。 对于先进的衬底，通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在单晶衬底例如大硅晶片上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。

公开(公告)号：US20030015725A1

公开(公告)日：2003-01-23

申请号：US09908886

申请日：2001-07-20

Applicant: MOTOROLA, INC.

Inventor： Ravindranath Droopad ,  Joyce Yamamoto ,  Zhiyi Yu

IPC: H01L029/74

CPC classification number: H01L21/02488 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02694 ,  H01L21/31691

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing ion beam assisted deposition, surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用离子束辅助沉积，表面活性剂增强外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。

公开(公告)号：US20030015700A1

公开(公告)日：2003-01-23

申请号：US09908860

申请日：2001-07-20

Applicant: MOTOROLA, INC.

Inventor： Kurt W. Eisenbeiser ,  Thomas Freeburg ,  E. James Prendergast ,  William J. Ooms ,  Ravindranath Droopad ,  Jamal Ramdani

IPC: H01L029/04 ,  H01L031/036 ,  H01L031/0376

CPC classification number: H01L31/0693 ,  H01L21/02164 ,  H01L21/02197 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02488 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/31691 ,  H01L21/8221 ,  H01L23/66 ,  H01L31/0687 ,  H01L2924/0002 ,  Y02E10/544 ,  H01L2924/00

Abstract: Multijunction solar cell structures (100) including high quality epitaxial layers of monocrystalline semiconductor materials that are grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers are disclosed. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer. The accommodating buffer (104) layer is a layer of monocrystalline material spaced apart from the silicon wafer by an amorphous interface layer (112) of silicon oxide. The amorphous interface layer (112) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Multiple and varied accommodating buffer layers can be used to achieve the monolithic integration of multiple non-lattice matched solar cell junctions.

Abstract translation: 公开了包括通过形成用于生长单晶层的柔性衬底生长在单晶衬底（102）如大硅晶片上的单质半导体材料的高质量外延层的多结太阳能电池结构（100）。 实现顺应性衬底的形成的一种方法包括首先在硅晶片上生长容纳缓冲层（104）。 容纳缓冲器（104）层是通过氧化硅的非晶界面层（112）与硅晶片间隔开的单晶材料层。 非晶界面层（112）耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。 可以使用多个不同的容纳缓冲层来实现多个非晶格匹配的太阳能电池接头的单片集成。

公开(公告)号：US20030012965A1

公开(公告)日：2003-01-16

申请号：US09901109

申请日：2001-07-10

Applicant: MOTOROLA, INC.

Inventor： Ravindranath Droopad ,  Scott T. Massie

IPC: B32B009/00

CPC classification number: H01L21/02521 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  Y10T428/265

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer is lattice matched to the overlying monocrystalline material layer. In addition, formation of a compliant substrate may include utilizing a monocrystalline oxygen-doped material layer. The monocrystalline oxygen-doped material layer may prevent contamination of the accommodating buffer layer and may facilitate isolation of devices formed in the overlying monocrystalline material. Further, the monocrystalline oxygen-doped materials may be highly resistive and could reduce or eliminate backgating and sidegating effects.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层与上覆单晶材料层晶格匹配。 此外，顺应性衬底的形成可以包括利用单晶氧掺杂材料层。 单晶氧掺杂材料层可以防止容纳缓冲层的污染，并且可以促进在上层单晶材料中形成的器件的隔离。 此外，单晶氧掺杂材料可以是高电阻性的并且可以减少或消除背部和侧面效应。

公开(公告)号：US20020195057A1

公开(公告)日：2002-12-26

申请号：US09884981

申请日：2001-06-21

Applicant: MOTOROLA, INC.

Inventor： Ravindranath Droopad ,  Scott T. Massie

IPC: C23C016/00 ,  C23F001/00 ,  C30B025/00

CPC classification number: C30B23/02 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406

Abstract: An apparatus for forming a semiconductor structure is provided. The apparatus includes a chamber and a plurality of first material sources positioned at least partially within the chamber. The plurality of first material sources are configured to provide materials for the formation of a monocrystalline accommodating buffer layer on a substrate. The plurality of first material sources includes an oxygen source. At least one second material source is also positioned at least partially within the chamber and is configured to provide material for the formation of a monocrystalline oxygen-doped material layer overlying the monocrystalline accommodating buffer layer. The apparatus also includes an oxygen-adjustment mechanism configured to adjust the partial pressure of oxygen in the chamber.

Abstract translation: 提供一种用于形成半导体结构的装置。 该装置包括腔室和至少部分地定位在腔室内的多个第一材料源。 多个第一材料源被配置为提供用于在衬底上形成单晶容纳缓冲层的材料。 多个第一材料源包括氧源。 至少一个第二材料源还至少部分地定位在室内，并且被配置为提供用于形成覆盖单晶容纳缓冲层的单晶氧掺杂材料层的材料。 该装置还包括配置成调节室中的氧分压的氧气调节机构。