公开(公告)号：US06861130B2

公开(公告)日：2005-03-01

申请号：US10001575

申请日：2001-11-02

Applicant: Mark P. D'Evelyn ,  David C. Pender ,  Suresh S. Vagarali ,  Dong-Sil Park

Inventor： Mark P. D'Evelyn ,  David C. Pender ,  Suresh S. Vagarali ,  Dong-Sil Park

IPC: C04B35/58 ,  B28B3/00 ,  C01B20060101 ,  C01B21/06 ,  C23C20060101 ,  C23C14/34 ,  H01L21/20 ,  H01L33/00

CPC classification number: B01J3/062 ,  B01J2203/0665 ,  B01J2203/0685

Abstract: Polycrystalline gallium nitride (GaN) characterized by having the atomic fraction of gallium ranging from between about 49% to 55%, an apparent density of between about 5.5 and 6.1 g/cm3, and a Vickers hardness of above about 1 GPa. Polycrystalline GaN can be made by hot isostatic pressing (HIPing) at a temperature ranging from about 1150° C. to 1300° C. and a pressure ranging from between about 1 and 10 Kbar. Alternatively, polycrystalline GaN can be made by high pressure/high temperature (HP/HT) sintering at a temperature ranging from about 1200° to 1800° C. and a pressure ranging from about 5 to 80 Kbar.

Abstract translation: 其特征在于，其原子分数为约49％至55％，表观密度为约5.5至6.1g / cm 3，维氏硬度高于约1GPa的多晶氮化镓（GaN）。 多晶GaN可以通过热等静压（HIPing）在约1150℃至1300℃的温度和约1至10Kbar的压力下制备。 或者，可以在约1200℃至1800℃的温度和约5至80千巴的压力下通过高压/高温（HP / HT）烧结制备多晶GaN。

公开(公告)号：US06475254B1

公开(公告)日：2002-11-05

申请号：US09987863

申请日：2001-11-16

Applicant: Aaron W. Saak ,  Mark P. D'Evelyn ,  Chung S. Kim ,  Michael H. Zimmerman ,  Steven W. Webb

Inventor： Aaron W. Saak ,  Mark P. D'Evelyn ,  Chung S. Kim ,  Michael H. Zimmerman ,  Steven W. Webb

IPC: C09K314

CPC classification number: B24D3/14 ,  C09K3/1436

Abstract: Coated abrasive particle for use in vitreous bond matrices, which particle is coated with between 1 and about 50 coating layers. Each coating layer ranges in thickness from between about 0.1 and 50 microns. Each layer has the composition, MCXNYBZOW, where, M represents one or more of Ti, Si, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Re or a rare earth metal, and w, x, y, and z, each range from between 0 and 3. The outermost coating layer has a concentration of oxygen that is higher by a factor of at least about 2 than the layer in direct contact with the abrasive particle.

Abstract translation: 用于玻璃质基质的涂覆磨料颗粒，该颗粒涂覆有1至约50个涂层。 每个涂层的厚度范围为约0.1-50微米。 每层具有组成，MCXNYBZOW，其中，M表示Ti，Si，V，Cr，Zr，Nb，Mo，Hf，Ta，W，Re或稀土金属中的一种或多种，​​w，x，y， 和z，每个范围在0和3之间。最外涂层的氧浓度比直接与磨料颗粒接触的层高至少约2倍。

公开(公告)号：US08494017B2

公开(公告)日：2013-07-23

申请号：US13606894

申请日：2012-09-07

Applicant: Rajat Sharma ,  Eric M. Hall ,  Christiane Poblenz ,  Mark P. D'Evelyn

Inventor： Rajat Sharma ,  Eric M. Hall ,  Christiane Poblenz ,  Mark P. D'Evelyn

IPC: H01S5/00

CPC classification number: H01S5/3202 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/1085 ,  H01S5/2201 ,  H01S5/34333

Abstract: An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1−2±6} facets. The laser has high gain, low threshold currents, capability for extended operation at high current densities, and can be manufactured with improved yield. The laser is useful for optical data storage, projection displays, and as a source for general illumination.

Abstract translation: 边缘发射固态激光器和方法。 激光器包括具有非极性或半极性取向的体GaN衬底上的至少一个AlInGaN有源层。 激光器的边缘包括{1 1-2±6}面。 激光器具有高增益，低阈值电流，能够在高电流密度下进行扩展操作，并且可以以提高的产量制造。 该激光器可用于光学数据存储，投影显示器和一般照明源。

公开(公告)号：US08354679B1

公开(公告)日：2013-01-15

申请号：US12569337

申请日：2009-09-29

Applicant: Mark P. D'Evelyn ,  Rajat Sharma

Inventor： Mark P. D'Evelyn ,  Rajat Sharma

IPC: H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC classification number: H01L33/405 ,  H01L24/81 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/387 ,  H01L2224/16225 ,  H01L2224/81001

Abstract: A high efficiency microcavity light emitting diode comprises a stack of AlxInyGa1-x-yN layers, where 0≦x, y, x+y≦1, with each layer having a high crystalline quality. The stack has a uniform thickness less than 6λ/n, with an active layer centered approximately (2i+1)λ/(4n) from a reflective electrical contact, where λ is the peak emission wavelength, n is the index of refraction at the peak emission wavelength, i is an integer, and each layer within the stack has a dislocation density below about 105 cm−2.

Abstract translation: 高效微腔发光二极管包括一层Al x In y Ga 1-x-y N层，其中0＆lt; nlE; x，y，x + y＆nlE; 1，每层具有高结晶质量。 堆叠具有小于6λ/ n的均匀厚度，其中有效层从反射电接触中心为大约（2i + 1）λ/（4n），其中λ是峰值发射波长，n是在 峰值发射波长，i是整数，并且堆叠内的每个层具有低于约105cm -2的位错密度。

公开(公告)号：US08329511B2

公开(公告)日：2012-12-11

申请号：US13425304

申请日：2012-03-20

Applicant: Mark P. D'Evelyn

Inventor： Mark P. D'Evelyn

IPC: H01L21/50

CPC classification number: C30B29/403 ,  C30B7/105 ,  C30B23/025 ,  C30B25/18 ,  C30B33/06 ,  H01L24/81 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/11 ,  H01L2224/81005 ,  H01L2224/81224 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A nitride crystal or wafer with a removable surface layer comprises a high quality nitride base crystal, a release layer, and a high quality epitaxial layer. The release layer has a large optical absorption coefficient at wavelengths where the base crystal is substantially transparent and may be etched under conditions where the nitride base crystal and the high quality epitaxial layer are not. The high quality epitaxial layer may be removed from the nitride base crystal by laser liftoff or by chemical etching after deposition of at least one epitaxial device layer. The nitride crystal with a removable surface layer is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.

公开(公告)号：US08306081B1

公开(公告)日：2012-11-06

申请号：US12785404

申请日：2010-05-21

Applicant: Mathew Schmidt ,  Mark P. D'Evelyn

Inventor： Mathew Schmidt ,  Mark P. D'Evelyn

IPC: H01S5/00

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3211

Abstract: An improved optical device. The device has a gallium nitride substrate member comprising indium entities, gallium entities, and nitrogen entities. In one or more embodiments, the gallium nitride substrate member has an indium content ranging from about 1 to about 50% in weight. Preferably, the gallium nitride substrate member has a semipolar crystalline surface region or a non-polar crystalline surface region. The device has an epitaxially formed laser stripe region comprising an indium content ranging from about 1 to about 50% and formed overlying a portion of the semipolar crystalline orientation surface region or the non-polar crystalline surface region. The laser stripe region is characterized by a cavity orientation in a predefined direction according to a specific embodiment. The laser strip region has a first end and a second end including respective a first cleaved facet provided on the first end of the laser stripe region and a second cleaved facet provided on the second end of the laser stripe region.

Abstract translation: 改进的光学装置。 该器件具有包括铟实体，镓实体和氮实体的氮化镓衬底构件。 在一个或多个实施例中，氮化镓衬底构件的铟含量为约1至约50重量％。 优选地，氮化镓衬底构件具有半极性结晶表面区域或非极性结晶表面区域。 该器件具有外延形成的激光条纹区域，其包含范围为约1至约50％的铟含量并且形成在半极性晶体取向表面区域或非极性晶体表面区域的一部分上。 根据具体实施例，激光条纹区域的特征在于沿着预定方向的空腔取向。 激光带区具有第一端和第二端，其包括设置在激光条区域的第一端上的第一切割小面和设置在激光条纹区域的第二端上的第二切割小面。

公开(公告)号：US20120199952A1

公开(公告)日：2012-08-09

申请号：US13346507

申请日：2012-01-09

Applicant: Mark P. D'Evelyn ,  Christiane Poblenz ,  Michael R. Krames

Inventor： Mark P. D'Evelyn ,  Christiane Poblenz ,  Michael R. Krames

IPC: H01L29/20 ,  H01L21/20

CPC classification number: H01L21/02433 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02499 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/2003

Abstract: A method for growth of indium-containing nitride films is described, particularly a method for fabricating a gallium, indium, and nitrogen containing material. On a substrate having a surface region a material having a first indium-rich concentration is formed, followed by a second thickness of material having a first indium-poor concentration. Then a third thickness of material having a second indium-rich concentration is added to form a sandwiched structure which is thermally processed to cause formation of well-crystallized, relaxed material within a vicinity of a surface region of the sandwich structure.

Abstract translation: 描述了含铟氮化物膜的生长方法，特别是制造镓，铟和含氮材料的方法。 在具有表面区域的基板上形成具有第一富铟浓度的材料，然后形成具有第一贫铟浓度的第二厚度的材料。 然后加入具有第二富铟浓度的第三厚度的材料以形成夹层结构，其被热处理以在夹层结构的表面区域附近形成良好结晶的松弛材料。

公开(公告)号：US20120137966A1

公开(公告)日：2012-06-07

申请号：US12891668

申请日：2010-09-27

Applicant: Mark P. D'Evelyn ,  Joseph A. Kapp ,  John C. Lawrenson

Inventor： Mark P. D'Evelyn ,  Joseph A. Kapp ,  John C. Lawrenson

IPC: C30B7/10

CPC classification number: C30B7/10 ,  C30B7/105 ,  C30B35/002 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1096

Abstract: A high pressure apparatus and related methods for processing supercritical fluids is described. The apparatus includes a capsule, a heater, at least one ceramic ring with one or more scribe marks and/or cracks present. The apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. The apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.

Abstract translation: 描述了用于加工超临界流体的高压装置和相关方法。 该装置包括胶囊，加热器，至少一个具有一个或多个划痕和/或裂纹的陶瓷环。 该装置可选地具有包含每个陶瓷环的金属套筒。 该设备还具有高强度外壳，具有相关绝缘的端部法兰和电源控制系统。 该装置能够分别获得0.2-2GPa和400-1200℃的压力和温度。

公开(公告)号：US08097081B2

公开(公告)日：2012-01-17

申请号：US12133364

申请日：2008-06-05

Applicant: Mark P. D'Evelyn

Inventor： Mark P. D'Evelyn

IPC: C30B1/12

CPC classification number: C30B29/406 ,  B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/067 ,  B01J2203/068 ,  B30B11/005 ,  C30B7/10 ,  C30B29/403 ,  Y02P20/544 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1096

Abstract: A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. IN a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.

Abstract translation: 一种用于加工超临界流体的高压装置及相关方法。 在具体实施例中，本装置包括胶囊，加热器，至少一个陶瓷环，但可以是多个环，任选地，存在一个或多个划痕和/或裂纹。 在具体实施例中，该装置可选地具有包含每个陶瓷环的金属套筒。 该设备还具有高强度外壳，具有相关绝缘的端部法兰和电源控制系统。 在具体实施例中，该装置能够分别访问0.2-2GPa和400-1200℃的压力和温度。

公开(公告)号：US20120000415A1

公开(公告)日：2012-01-05

申请号：US13160307

申请日：2011-06-14

Applicant: Mark P. D'Evelyn ,  James S. Speck

Inventor： Mark P. D'Evelyn ,  James S. Speck

IPC: C30B25/02 ,  C30B23/02

CPC classification number: C30B25/18 ,  C30B25/02 ,  C30B29/403 ,  C30B33/06

Abstract: Techniques for processing materials in supercritical fluids include processing in a capsule disposed within a high-pressure apparatus enclosure. The invention is useful for growing crystals of: GaN; AN; InN; and their alloys, namely: InGaN; AlGaN; and AlInGaN; for manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors.

Abstract translation: 在超临界流体中处理材料的技术包括在设置在高压设备外壳内的胶囊中的加工。 本发明可用于生长GaN的晶体; 一个; 旅店; 及其合金，即：InGaN; AlGaN; 和AlInGaN; 用于制造本体或图案化衬底，其又可用于制造光电子器件，激光器，发光二极管，太阳能电池，光电化学水分解和氢生成，光电检测器，集成电路和晶体管。