公开(公告)号：US20200329553A1

公开(公告)日：2020-10-15

申请号：US16860805

申请日：2020-04-28

Applicant: Rambus Inc.

Inventor： Kyung Suk Oh ,  Ralf M. Schmitt ,  Yijiong Feng

IPC: H05K1/02 ,  H01L23/498 ,  H01L23/528 ,  H01B5/02

Abstract: A structure for delivering power is described. In some embodiments, the structure can include conductors disposed on two or more layers. Specifically, the structure can include a first set of interdigitated conductors disposed on a first layer and oriented substantially along an expected direction of current flow. At least one conductor in the first set of interdigitated conductors may be maintained at a first voltage, and at least one conductor in the first set of interdigitated conductors may be maintained at a second voltage, wherein the second voltage is different from the first voltage. The structure may further include a conducting structure disposed on a second layer, wherein the second layer is different from the first layer, and wherein at least one conductor in the conducting structure is maintained at the first voltage.

公开(公告)号：US20190130952A1

公开(公告)日：2019-05-02

申请号：US16174180

申请日：2018-10-29

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Kyung Suk Oh

IPC: G11C7/22 ,  G11C11/4063 ,  G11C29/02 ,  G11C5/06

Abstract: A system has a plurality of memory devices arranged in a fly-by topology, each having on-die termination (ODT) circuitry for connecting to an address and control (RQ) bus. The ODT circuitry of each memory device includes a set of one or more control registers for controlling on-die termination of one or more signal lines of the RQ bus. A first memory device includes a first set of one or more control registers storing a first ODT value, for controlling termination of one or more signal lines of the RQ bus by the ODT circuitry of the first memory device, and a second memory device includes a second set of one or more control registers storing a second ODT value different from the first ODT value, for controlling termination of one or more signal lines of the RQ bus by the ODT circuitry of the second memory device.

公开(公告)号：US20190052269A1

公开(公告)日：2019-02-14

申请号：US16051291

申请日：2018-07-31

Applicant: Rambus Inc.

Inventor： Kyung Suk Oh ,  Ian P. Shaeffer

IPC: H03K19/00 ,  G06F3/06 ,  G06F13/40 ,  G11C16/06 ,  G11C11/417 ,  G11C16/32 ,  G11C11/413 ,  G11C11/4063 ,  G11C11/401 ,  G11C11/41 ,  G11C16/26 ,  G11C11/419 ,  H03K19/0175 ,  G11C11/4093

Abstract: A memory control component outputs a memory write command to a memory IC and also outputs write data to be received via data inputs of the memory IC. Prior to reception of the write data within the memory IC, the memory control component asserts a termination control signal that causes the memory IC to apply to the data inputs a first on-die termination impedance during reception of the write data followed by a second on-die termination impedance after the write data has been received. The memory control component deasserts the termination control signal to cause the memory IC to apply no termination impedance to the data inputs.

公开(公告)号：US10115439B2

公开(公告)日：2018-10-30

申请号：US15665304

申请日：2017-07-31

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Kyung Suk Oh

IPC: G11C5/06 ,  G11C7/22 ,  G11C29/02 ,  G11C5/04 ,  G11C7/18 ,  G11C11/4097

Abstract: A system has a plurality of memory devices arranged in a fly-by topology, each having on-die termination (ODT) circuitry for connecting to an address and control (RQ) bus. The ODT circuitry of each memory device includes a set of one or more control registers for controlling on-die termination of one or more signal lines of the RQ bus. A first memory device includes a first set of one or more control registers storing a first ODT value, for controlling termination of one or more signal lines of the RQ bus by the ODT circuitry of the first memory device, and a second memory device includes a second set of one or more control registers storing a second ODT value different from the first ODT value, for controlling termination of one or more signal lines of the RQ bus by the ODT circuitry of the second memory device.

公开(公告)号：US20180047436A1

公开(公告)日：2018-02-15

申请号：US15623261

申请日：2017-06-14

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Lawrence Lai ,  Fan Ho ,  David A. Secker ,  Wayne S. Richardson ,  Akash Bansal ,  Brian S. Leibowitz ,  Kyung Suk Oh

IPC: G11C8/12 ,  G11C5/04 ,  G11C5/06 ,  G11C8/18 ,  H01L23/00 ,  H01L25/065 ,  G11C5/02 ,  G11C7/10

CPC classification number: G11C8/12 ,  G11C5/02 ,  G11C5/04 ,  G11C5/06 ,  G11C5/063 ,  G11C7/1012 ,  G11C7/1045 ,  G11C8/18 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48471 ,  H01L2224/49171 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00

Abstract: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.

公开(公告)号：US20170331477A1

公开(公告)日：2017-11-16

申请号：US15581480

申请日：2017-04-28

Applicant: Rambus Inc.

Inventor： Kyung Suk Oh ,  Ian P. Shaeffer

IPC: H03K19/00 ,  G06F3/06 ,  G11C16/26 ,  G11C16/06 ,  G11C11/419 ,  G11C11/417 ,  G11C11/413 ,  G11C11/41 ,  G11C11/4093 ,  G11C11/4063 ,  G11C11/401 ,  G06F13/40 ,  G11C16/32 ,  H03K19/0175

CPC classification number: H03K19/0005 ,  G06F3/0605 ,  G06F3/0659 ,  G06F3/0685 ,  G06F13/4086 ,  G11C11/401 ,  G11C11/4063 ,  G11C11/4093 ,  G11C11/41 ,  G11C11/413 ,  G11C11/417 ,  G11C11/419 ,  G11C16/06 ,  G11C16/26 ,  G11C16/32 ,  H03K19/017545

Abstract: A memory control component outputs a memory write command to a memory IC and also outputs write data to be received via data inputs of the memory IC. Prior to reception of the write data within the memory IC, the memory control component asserts a termination control signal that causes the memory IC to apply to the data inputs a first on-die termination impedance during reception of the write data followed by a second on-die termination impedance after the write data has been received. The memory control component deasserts the termination control signal to cause the memory IC to apply no termination impedance to the data inputs.

公开(公告)号：US09721629B2

公开(公告)日：2017-08-01

申请号：US15394009

申请日：2016-12-29

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Kyung Suk Oh

IPC: G11C5/06 ,  G11C7/22 ,  G11C29/02

CPC classification number: G11C7/22 ,  G11C5/025 ,  G11C5/04 ,  G11C5/06 ,  G11C5/063 ,  G11C7/18 ,  G11C11/4063 ,  G11C11/4097 ,  G11C29/02 ,  G11C29/022 ,  G11C29/025 ,  G11C29/028

Abstract: A system has a plurality of memory devices arranged in a fly-by topology, each having on-die termination (ODT) circuitry for connecting to an address and control (RQ) bus. The ODT circuitry of each memory device includes a set of one or more control registers for controlling on-die termination of one or more signal lines of the RQ bus. A first memory device includes a first set of one or more control registers storing a first ODT value, for controlling termination of one or more signal lines of the RQ bus by the ODT circuitry of the first memory device, and a second memory device includes a second set of one or more control registers storing a second ODT value different from the first ODT value, for controlling termination of one or more signal lines of the RQ bus by the ODT circuitry of the second memory device.

公开(公告)号：US20160293236A1

公开(公告)日：2016-10-06

申请号：US15081745

申请日：2016-03-25

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Kyung Suk Oh

IPC: G11C7/22

CPC classification number: G11C7/22 ,  G11C5/025 ,  G11C5/04 ,  G11C5/06 ,  G11C5/063 ,  G11C7/18 ,  G11C11/4063 ,  G11C11/4097 ,  G11C29/02 ,  G11C29/022 ,  G11C29/025 ,  G11C29/028

Abstract: A system has a plurality of memory devices arranged in a fly-by topology, each having on-die termination (ODT) circuitry for connecting to an address and control (RQ) bus. The ODT circuitry of each memory device includes a set of one or more control registers for controlling on-die termination of one or more signal lines of the RQ bus. A first memory device includes a first set of one or more control registers storing a first ODT value, for controlling termination of one or more signal lines of the RQ bus by the ODT circuitry of the first memory device, and a second memory device includes a second set of one or more control registers storing a second ODT value different from the first ODT value, for controlling termination of one or more signal lines of the RQ bus by the ODT circuitry of the second memory device.

公开(公告)号：US20160142200A1

公开(公告)日：2016-05-19

申请号：US14868721

申请日：2015-09-29

Applicant: Rambus Inc.

Inventor： Qi Lin ,  Brian Leibowitz ,  Hae-Chang Lee ,  Jihong Ren ,  Kyung Suk Oh ,  Jared L. Zerbe

IPC: H04L7/033 ,  H04L25/03 ,  H04L7/00

CPC classification number: H04L25/03254 ,  H04L7/0025 ,  H04L7/0054 ,  H04L7/0058 ,  H04L7/0087 ,  H04L7/033 ,  H04L7/0331 ,  H04L25/03057 ,  H04L25/03885 ,  H04L43/028 ,  H04L2025/03617

Abstract: A receiver is equipped with an adaptive phase-offset controller and associated timing-calibration circuitry that together shift the timing for a data sampler and a digital equalizer. The sample and equalizer timing is shifted to a position with less residual inter-symbol interference (ISI) energy relative to the current symbol. The shifted position may be calculated using a measure of signal quality, such as a receiver bit-error rate or a comparison of filter-tap values, to optimize the timing of data recovery.

Abstract translation: 接收器配备有自适应相位偏移控制器和相关联的定时校准电路，其一起移动数据采样器和数字均衡器的定时。 样本和均衡器定时被转移到具有相对于当前符号的残余符号间干扰（ISI）能量较少的位置。 可以使用信号质量的测量（诸如接收机比特错误率或滤波器抽头值的比较）来计算移位的位置，以优化数据恢复的定时。

公开(公告)号：US09337835B2

公开(公告)日：2016-05-10

申请号：US14857794

申请日：2015-09-17

Applicant: Rambus Inc.

Inventor： Kyung Suk Oh ,  Ian P. Shaeffer

IPC: H03K17/16 ,  H03K19/00 ,  G06F13/40 ,  G11C11/4093 ,  H03K19/0175 ,  G11C11/401 ,  G11C11/419 ,  G11C16/26 ,  G11C11/41 ,  G11C11/4063 ,  G11C11/413 ,  G11C11/417 ,  G11C16/06 ,  G11C16/32

CPC classification number: H03K19/0005 ,  G06F3/0605 ,  G06F3/0659 ,  G06F3/0685 ,  G06F13/4086 ,  G11C11/401 ,  G11C11/4063 ,  G11C11/4093 ,  G11C11/41 ,  G11C11/413 ,  G11C11/417 ,  G11C11/419 ,  G11C16/06 ,  G11C16/26 ,  G11C16/32 ,  H03K19/017545

Abstract: An IC die transmits command signals, address signals and data signals to a flash memory device at respective times via a time-multiplexed external signaling line, the data signals representing data to be stored within an array of non-volatile storage elements of the flash memory device. The IC die additionally transmits a control signal to the flash memory device via one or more external control signal lines, the control signal directing the flash memory device to switchably couple an on-die termination element to the time-multiplexed signaling line.

Abstract translation: IC芯片经由时间复用的外部信号线在各自的时间将命令信号，地址信号和数据信号发送到闪速存储器件，数据信号表示要存储在闪速存储器的非易失性存储元件阵列内的数据 设备。 IC芯片还经由一个或多个外部控制信号线将控制信号发送到闪速存储器件，该控制信号指示闪速存储器件可切换地将片上端接元件耦合到时分多路信号线。